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Recent work for the NASA Electronic Parts and Packaging Program Power MOSFET task is presented. The Task technology focus, roadmap, and partners are given. Recent single-event effect test results on commercial, automotive, and radiation hardened trench power MOSFETs are summarized with an emphasis on risk of using commercial and automotive trench-gate power MOSFETs in space applications.
We will present the first ever single-event effects testing results on a 22 nm fully-depleted silicon-on-insulator test chip. The 128 MB SRAMs were irradiated with heavy ions and the results are compared to previous technology generations.
In 1972, when engineers at Hughes Aircraft Corporation discovered that errors in their satellite avionics were being caused by cosmic rays (so-called single-event effects, or SEE), Moore's Law was only 7 years old. Now, more than 45 years on, the scaling that drove Moore's Law for its first 35 years has reached its limits. However, electronics technology continues to evolve exponentially and SEE remain a formidable issue for use of electronics in space. SEE occur when a single ionizing particle passes through a sensitive volume in an active semiconductor device and generates sufficient charge to cause anomalous behavior or failure in the device. Because SEE can occur at any time during the mission, the emphasis of SEE risk management methodologies is ensuring that all SEE modes in a device under test are detected by the test. Because a particle's probability of causing an SEE generally increases as the particle becomes more ionizing, heavy-ion beams have been and remain the preferred tools for elucidating SEE vulnerabilities. In this talk we briefly discuss space radiation environments and SEE mechanisms, describe SEE test methodologies and discuss current and future challenges for use of heavy-ion beams for SEE testing in an era when the continued validity of Moore's law depends on innovation rather than CMOS scaling.
After four decades of single-event effects testing, radiation engineers face pressure to find alternatives to reduce or eliminate testing costs. Many of these alternatives focus on use of archival test data to bound SEE risk for similar parts. This presentation examines the challenges and limitations of such analyses and suggests analysis techniques and goals that are likely to be most appropriate for such efforts.
The sixth set of heavy ion single event effects (SEE) test data have been collected since the last IEEE publications in December issues of IEEE - Nuclear Science Transactions for 1985, 1987, 1989, 1991, and the IEEE Workshop Record, 1993. Trends in SEE susceptibility (including soft errors and latchup) for state-of- are evaluated.
This set of slides, intended for a presentation at a summer school, discusses the radiation effects of subatomic particles. It discusses single-event effects including types, indirect ionization, a cross-section, the range, angular effects, and concludes by providing Poisson examples.
Single-event effects and total ionizing dose testing are described for a 32-layer NAND flash memory, in both SLC and MLC configurations, with special considerations for unique three-dimensional test results. Extraction of three-dimensional heavy-ion test data presents a unique visualization of angular effects in NAND flash. Pattern dependence differences between SLC and MLC mode are noted, along with slightly non-uniform angular cross-section results due to the complex volume. Finally, TID data under different operating and bias conditions shows that the failure point remains the higher-voltage erasure circuitry.
The performance of electronic devices in a space radiation environment is often limited by susceptibility to single-event effects (SEE), total ionizing dose (TID), and displacement damage (DD). Interpreting the results of SEE, TID, and DD testing of complex devices is quite difficult given the rapidly changing nature of both technology and the related radiation issues. Radiation testing is performed to establish the sensitivities of candidate spacecraft electronics to single-event upset (SEU), single-event latchup (SEL), single-event gate rupture (SEGR), single-event burnout (SEB), single-event transients (SETs), TID, and DD effects. Knowing where to search for these test results is a valuable resource for the aerospace engineer or spacecraft design engineer. This poster is intended to be a resource tool for finding radiation test data.
Single-Event Effects (SEE) testing was conducted on the nVidia Jetson TX1 System on Chip (SOC); herein referred to as device under test (DUT). Testing was conducted at Massachusetts General Hospitals (MGH) Francis H. Burr Proton Therapy Center on October 16th, 2016 using 200MeV protons. This testing trip was purposed to provide a baseline assessment of the radiation susceptibility of the DUT as no previous testing had been conducted on this component.
Single-Event Effects (SEE) testing was conducted on the nVidia GTX 1050 Graphics Processor Unit (GPU); herein referred to as device under test (DUT). Testing was conducted at Massachusetts General Hospitals (MGH) Francis H. Burr Proton Therapy Center on April 9th, 2017 using 200-MeV protons. This testing trip was purposed to provide a baseline assessment of the radiation susceptibility of the DUT as no previous testing had been conducted on this component.
The fact that protons cause single-event effects (SEE) in most devices through production of light-ion recoils has led to attempts to bound heavy-ion SEE susceptibility through use of proton data. Although this may be a viable strategy for some devices and technologies, the data must be analyzed carefully and conservatively to avoid over-optimistic estimates of SEE performance. We examine the constraints that proton test data can impose on heavy-ion SEE susceptibility.
Single-event effect (SEE) radiation test results are presented for various trench-gate power MOSFETs. The heavy-ion response of the first (and only) radiation-hardened trench-gate power MOSFET is evaluated: the manufacturer SEE response curve is verified and importantly, no localized dosing effects are measured, distinguishing it from other, non-hardened trench-gate power MOSFETs. Evaluations are made of n-type commercial and both n- and p-type automotive grade trench-gate device using ions comparable to of those on the low linear energy transfer (LET) side of the iron knee of the galactic cosmic ray spectrum, to explore suitability of these parts for missions with higher risk tolerance and shorter duration, such as CubeSats. Part-to-part variability of SEE threshold suggests testing with larger sample sizes and applying more aggressive derating to avoid on-orbit failures. The n-type devices yielded expected localized dosing effects including when irradiated in an unbiased (0-V) configuration, adding to the challenge of inserting these parts into space flight missions.
Single event effects (SEE) are a reliability concern for modern microelectronics. Bit corruptions can be caused by single event upsets (SEUs) in the storage cells or by sampling single event transients (SETs) from a logic path. Likewise, an accurate prediction of soft error susceptibility from SETs requires good models to convert collected charge into compact descriptions of the current injection process. This paper describes a simple, yet effective, method to model the current waveform resulting from a charge collection event for SET circuit simulations. The model uses two double-exponential current sources in parallel, and the results illustrate why a conventional model based on one double-exponential source can be incomplete. Furthermore, a small set of logic cells with varying input conditions, drive strength, and output loading are simulated to extract the parameters for the dual double-exponential current sources. As a result, the parameters are based upon both the node capacitance and the restoring current (i.e., drive strength) of the logic cell.
We present results for the single-event effect response of commercial production-level resistive random access memories. We found that the resistive memory arrays are immune to heavy ion-induced upsets. However, the devices were susceptible to single-event functional interrupts, due to upsets from the control circuits. The intrinsic radiation tolerant nature of resistive memory makes the technology an attractive consideration for future space applications.
Although heavy-ion single-event effects (SEE) pose serious threats to semiconductor devices in space, many missions face difficulties testing such devices at heavy-ion accelerators. Low-cost missions often find such testing too costly. Even well funded missions face issues testing commercial off the shelf (COTS) due to packaging and integration. Some missions wish to fly COTS systems with little insight into their components. Heavy-ion testing such parts and systems requires access to expensive and hard-to-access ultra-high energy ion accelerators, or significant system modification. To avoid these problems, some have proposed using recoil ions from high-energy protons as a proxy to bound heavy-ion SEE rates.
This part of the course first outlines the conventional Single Event Effect (SEE), radiation hardness assurance (RHA) approach, which emphasizes mission success. Next, Dr. Ladbury will discuss the challenges posed by new satellite platforms (e.g., cubesats, nanosats, etc.), where cost and schedule receive emphasis equal to if not greater than mission success. These additional pressures, along with growing demands to reduce size, weight and power, coupled with increased performance, drive many projects toward expanding their use of commercial-off-the-shelf (COTS) technologies. While this may reduce direct parts cost and procurement lead times, it undermines many cost-reduction strategies used for conventional SEE RHA and can make radiation testing and analysis one of the most significant risksor worse, a risk neglected altogether. That section will end with some approaches for restoring balance in the troika of mission success, cost, and schedule. This is captured in SEE RHA as risk management: identify the threat, evaluate the threat, and mitigate the threat.
This part of the course first outlines the conventional Single Event Effect (SEE), radiation hardness assurance (RHA) approach, which emphasizes mission success. Next, Dr. Ladbury will discuss the challenges posed by new satellite platforms (e.g., cubesats, nanosats, etc.), where cost and schedule receive emphasis equal to if not greater than mission success. These additional pressures, along with growing demands to reduce size, weight and power, coupled with increased performance, drive many projects toward expanding their use of commercial-off-the-shelf (COTS) technologies. While this may reduce direct parts cost and procurement lead times, it undermines many cost-reduction strategies used for conventional SEE RHA and can make radiation testing and analysis one of the most significant risks or worse, a risk neglected altogether. That section will end with some approaches for restoring balance in the troika of mission success, cost, and schedule. This is captured in SEE RHA as risk management: identify the threat, evaluate the threat, and mitigate the threat.
Deep learning (DL) presents new opportunities for enabling spacecraft autonomy, onboard analysis, and intelligent applications for space missions. However, DL applications are computationally intensive and often infeasible to deploy on radiation-hardened (rad-hard) processors, which traditionally harness a fraction of the computational capability of their commercial-off-the-shelf counterparts. Commercial FPGAs and system-on-chips present numerous architectural advantages and provide the computation capabilities to enable onboard DL applications; however, these devices are highly susceptible to radiation-induced single-event effects (SEEs) that can degrade the dependability of DL applications. In this article, we propose Reconfigurable ConvNet (RECON), a reconfigurable acceleration framework for dependable, high-performance semantic segmentation for space applications. In RECON, we propose both selective and adaptive approaches to enable efficient SEE mitigation. In our selective approach, control-flow parts are selectively protected by triple-modular redundancy to minimize SEE-induced hangs, and in our adaptive approach, partial reconfiguration is used to adapt the mitigation of dataflow parts in response to a dynamic radiation environment. Combined, both approaches enable RECON to maximize system performability subject to mission availability constraints. We perform fault injection and neutron irradiation to observe the susceptibility of RECON and use dependability modeling to evaluate RECON in various orbital case studies to demonstrate a 1.5–3.0× performability improvement in both performance and energy efficiency compared to static approaches.