Search NASA⌕ Search

SEARCH · Search NASA

Results for “Single crystals”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 307 records · Page 17
All sourcesNASA NTRSDOE OSTI
NASA NTRS1993

The viscoplastic behavior of Hastelloy-X single crystal

A viscoplastic constitutive model for simulating the behavior of Hastelloy-X single crystal material was derived based on crystallographic slip theory. To determine the appropriate constitutive model constants and to test the predictions of the model, tests on Hastelloy-X crystals were carried out, including the rate sensitivity, cyclic hardening, nonproportional hardening, relaxation, and strain rate dip tests. It was found necessary to include cube slip in the model in order to correlate the uniaxial behavior of the single crystal, to incorporate the interaction effects in both the hardening and the dynamic recovery evolution equations for the drag stress, and to successfully capture correct strain rate sensitivity under biaxial tension-torsion loading conditions.

Jordan, Eric H.↗
NASA NTRS1998

Growth of Bulk Single Crystals of Dicyanovinyl-Ansiole and its Derivatives for Nonlinear Optical Applications

Bulk single crystals of a series of thermally stable nonlinear optical organic materials, Dicyanovinyl-anisole (DIVA) and their methoxy derivatives, have been successfully grown using the Bridgman-Stockbarger technique. The growth conditions are chosen to be temperature gradient of 5 to 10 C/cm and lowering rate of 0.1 to 0.3 mm/h. Single crystals of DIVA and its derivatives, of 8 x 8 x 50 cu mm in size, have been grown while maintaining a flat solid-liquid growth interface.

Gebre, T.↗
NASA NTRS2017

Cavity Pull Rod: Device to Promote Single Crystal Growth from the Melt

A pull rod for use in producing a single crystal from a molten alloy is provided that includes an elongated rod having a first end and a second end, a first cavity defined at the first end and a second cavity defined at the first end and in communication with the first cavity. The first cavity receives the molten alloy and the second cavity vents a gas from the molten alloy to thereby template a single crystal when the pull rod is dipped into and extracted from the molten alloy.

Goldsby, Jon↗
NASA NTRS2013

Method of Promoting Single Crystal Growth During Melt Growth of Semiconductors

The method of the invention promotes single crystal growth during fabrication of melt growth semiconductors. A growth ampoule and its tip have a semiconductor source material placed therein. The growth ampoule is placed in a first thermal environment that raises the temperature of the semiconductor source material to its liquidus temperature. The growth ampoule is then transitioned to a second thermal environment that causes the semiconductor source material in the growth ampoule's tip to attain a temperature that is below the semiconductor source material's solidus temperature. The growth ampoule so-transitioned is then mechanically perturbed to induce single crystal growth at the growth ampoule's tip.

Su, Ching-Hua↗
NASA NTRS1973

Single crystal tubes of beta alumina

Edge-defined, film-fed growth process allows both tubular shapes and single crystallinity to be achieved. Beta alumina in single crystal form makes possible membranes with improved conductivities. Single crystal membranes also eliminate problems associated with electrical short circuiting of membrane due to possible sodium metal diffusion.

Stormont, R. W.↗
NASA NTRS1983

Production of large-area single-crystal wafers of cubic SiC for semiconductor devices

A reproducible process is described for growing a thick single-crystal layer of cubic SiC on a single-crystal Si wafer by chemical vapor deposition. A buffer layer, grown in situ, is used between the cubic SiC and the Si substrate to minimize the effect of lattice mismatch. Layers of up to 34 microns thick and several sq cm in area have been grown. Wafers are obtained by chemically removing the Si substrates from the grown layers. Excellent electron channeling patterns produced by these wafers indicate very good crystal quality. Preliminary electrical measurements have yielded electron mobilities up to 380 sq cm/Vs.

Nishino, S.↗
DOE OSTI2024

Deconstructing the High Voltage Degradation Mechanisms in Na 2/3 Ni 1/3 Mn 2/3 O 2 with Single Crystals and Advanced Electrolyte

Abstract Sodium layered oxide cathodes can uniquely benefit from the existing lithium‐ion battery industry as sodium‐ion batteries gain traction as a potential low‐cost, drop‐in replacement. However, achieving relevant energy density with a suitable cycle life remains a challenge for sodium layered oxides. At high operating potentials, several competing degradation mechanisms prevent P2‐type Na 2/3 Ni 1/3 Mn 2/3 O 2 (≈550 Wh kg −1 ) from achieving meaningful cycle life—with bulk structural instability and surface reactivity being the primary retractors. Herein, the issue of particle cracking is addressed through detailed synthesis methods of “single‐crystal” materials. By comparison to a polycrystalline baseline, the single‐crystal materials quantify the capacity loss due to isolation of active material caused by intergranular particle cracking. The single crystal materials are then employed in cells with an advanced, “localized saturated electrolyte” (LSE) to demonstrate the magnitude of capacity loss due to electrolyte decomposition at the cathode surface. Mitigation of the surface reactivity through the LSE electrolyte effectively demonstrates the elevated importance of surface reactivity at high voltages despite the onset of egregious particle cracking. This work aims to guide future research into understanding molten‐salt assisted syntheses and advance the debate on surface versus bulk degradation.

Darga, Joe↗
DOE OSTI2023

Ultrahigh‐Flux X‐ray Detection by a Solution‐Grown Perovskite CsPbBr 3 Single‐Crystal Semiconductor Detector

Abstract Solution‐processed perovskites are promising for hard X‐ray and gamma‐ray detection, but there are limited reports on their performance under extremely intense X‐rays. Here, a solution‐grown all‐inorganic perovskite CsPbBr 3 single‐crystal semiconductor detector capable of operating at ultrahigh X‐ray flux of 10 10 photons s −1 mm −2 is reported. High‐quality solution‐grown CsPbBr 3 single crystals are fabricated into detectors with a Schottky diode structure of eutectic gallium indium/CsPbBr 3 /Au. A high reverse‐bias voltage of 1000 V (435 V mm − 1 ) can be applied with a small and stable dark current of ≈60–70 nA (≈9–10 nA mm − 2 ), which enables a high sensitivity larger than 10 000 µC Gy air −1 cm − 2 and a simultaneous low detection limit of 22 nGy air s − 1 . The CsPbBr 3 semiconductor detector shows an excellent photocurrent linearity and reproducibility under 58.61 keV synchrotron X‐rays with flux from 10 6 to 10 10 photons s − 1 mm − 2 . Defect characterization by thermally stimulated current spectroscopy shows a similar low defect density of a synchrotron X‐ray and a lab X‐ray irradiated device. Solid‐state nuclear magnetic resonance spectroscopy suggests that the excellent performance of the solution‐grown CsPbBr 3 single crystal may be associated with its good short‐range order, comparable to the spectrometer‐grade melt‐grown CsPbBr 3 .

Pan, Lei↗
DOE OSTI2022

Pulling thin single crystal silicon wafers from a melt: The new leading-edge solar substrate

The Floating Silicon Method (FSM) has been established as a viable, stable method for growing single crystal ribbons directly from a silicon melt. With intense helium jet cooling to drive the linear progress of a [111] facet, pulled in the <110> direction, ribbons in the 0.6 – 3.0 mm thickness range can be grown at linear growth rates from 0.3 mm/s to >6 mm/s as reported in the literature. We report on recent progress towards growing (100) oriented ribbons with a net thickness of less than 200 microns and a ribbon width up to 18 cm using a stable, continuous process in the Leading Edge prototype furnace. Here, the 3D details of the single crystal growth are explained by extending the mechanics of the Limit Cycle Theory, with novel Internal Side Effect morphology described by a proposed Facet Flow Theory. Grown-in crystalline defect distributions are described as well as values of critical impurities like oxygen, carbon, dopants, and metals that are relevant for use as wafers for solar cells.

14 SOLAR ENERGY↗
NASA NTRS2003

Observations of Glide and Decomposition of a<101> Dislocations at High Temperatures in Ni-Al Single Crystals Deformed along the Hard Orientation

Ni-44at.% Al and Ni-50at.% single crystals were tested in compression in the hard (001) orientations. The dislocation processes and deformation behavior were studied as a function of temperature, strain and strain rate. A slip transition in NiAl occurs from alpha(111) slip to non-alphaaaaaaaaaaa9111) slip at intermediate temperatures. In Ni-50at.% Al single crystal, only alpha(010) dislocations are observed above the slip transition temperature. In contrast, alpha(101)(101) glide has been observed to control deformation beyond the slip transition temperature in Ni-44at.%Al. alpha(101) dislocations are observed primarily along both (111) directions in the glide plane. High-resolution transmission electron microscopy observations show that the core of the alpha(101) dislocations along these directions is decomposed into two alpha(010) dislocations, separated by a distance of approximately 2nm. The temperature window of stability for these alpha(101) dislocations depends upon the strain rate. At a strain rate of 1.4 x 10(exp -4)/s, lpha(101) dislocations are observed between 800 and 1000K. Complete decomposition of a alpha(101) dislocations into alpha(010) dislocations occurs beyond 1000K, leading to alpha(010) climb as the deformation mode at higher temperature. At lower strain rates, decomposition of a alpha(101) dislocations has been observed to occur along the edge orientation at temperatures below 1000K. Embedded-atom method calculations and experimental results indicate that alpha(101) dislocation have a large Peieris stress at low temperature. Based on the present microstructural observations and a survey of the literature with respect to vacancy content and diffusion in NiAl, a model is proposed for alpha(101)(101) glide in Ni-44at.%Al, and for the observed yield strength versus temperature behavior of Ni-Al alloys at intermediate and high temperatures.

Srinivasan, R.↗
NASA NTRS1986

Constitutive modelling of single crystal and directionally solidified superalloys

The trend towards improved engine efficiency and durability places increasing demands on materials that operate in the hot section of the gas turbine engine. These demands are being met by new coatings and materials such as single crystal and directionally solidified nickel-base superalloys which have greater creep/fatigue resistance at elevated temperatures and reduced susceptibility to grain boundary creep, corrosion and oxidation than conventionally cast alloys. Work carried out as part of a research program aimed at the development of constitutive equations to describe the elevated temperature stress-strain-time behavior of single crystal and directionally solidified turbine blade superalloys is discussed. The program involves both development of suitable constitutive models and their verification through elevated temperature tension-torsion testing of single crystals of PWA 1480.

Jordan, E. H.↗
NASA NTRS1993

NMR spectroscopy of experimentally shocked single crystal quartz: A reexamination of the NMR shock barometer

Cygan and others report a broadening of the Si-29 nuclear magnetic resonance (NMR) peak for synthetic quartz powders with increasing shock pressure which they propose as a shock wave barometer for natural systems. These results are expanded by studying single crystal quartz shocked to 12 and 33 GPa using the 6.5 m two-stage light-gas gun at Lawrence Livermore National Laboratories. Our NMR results differ substantially from those of Cygan and others and suggest that the proposed shock wave barometer may require refinement. The difference in results between this study and that of Cygan and others is most likely caused by different starting materials (single crystal vs. powder) and different shock loading histories. NMR results from single crystal studies may be more applicable to natural systems.

Fiske, P. S.↗
DOE OSTI2021

In situ inorganic conductive network formation in high-voltage single-crystal Ni-rich cathodes

High nickel content in LiNi x Co y Mn z O 2 (NCM, x ≥ 0.8, x + y + z = 1) layered cathode material allows high specific energy density in lithium-ion batteries (LIBs). However, Ni-rich NCM cathodes suffer from performance degradation, mechanical and structural instability upon prolonged cell cycling. Although the use of single-crystal Ni-rich NCM can mitigate these drawbacks, the ion-diffusion in large single-crystal particles hamper its rate capability. Herein, we report a strategy to construct an in situ Li 1.4 Y 0.4 Ti 1.6 (PO 4 ) 3 (LYTP) ion/electron conductive network which interconnects single-crystal LiNi 0.88 Co 0.09 Mn 0.03 O 2 (SC-NCM88) particles. The LYTP network facilitates the lithium-ion transport between SC-NCM88 particles, mitigates mechanical instability and prevents detrimental crystalline phase transformation. When used in combination with a Li metal anode, the LYTP-containing SC-NCM88-based cathode enables a coin cell capacity of 130 mAh g -1 after 500 cycles at 5 C rate in the 2.75-4.4 V range at 25 °C. Tests in Li-ion pouch cell configuration (i.e., graphite used as negative electrode active material) demonstrate capacity retention of 85% after 1000 cycles at 0.5 C in the 2.75-4.4 V range at 25 °C for the LYTP-containing SC-NCM88-based positive electrode.

25 ENERGY STORAGE↗
NASA NTRS2006

The Load Capability of Piezoelectric Single Crystal Actuators

Piezoelectric lead magnesium niobate-lead titanate (PMN-PT) single crystal is one of the most promising materials for electromechanical device applications due to its high electrical field induced strain and high electromechanical coupling factor. PMN-PT single crystal-based multilayer stack actuators and multilayer stack-based flextensional actuators have exhibited high stroke and high displacement-voltage ratios. The actuation capabilities of these two actuators were evaluated using a newly developed method based upon a laser vibrometer system under various loading conditions. The measured displacements as a function of mechanical loads at different driving voltages indicate that the displacement response of the actuators is approximately constant under broad ranges of mechanical load. The load capabilities of these PMN-PT single crystal-based actuators and the advantages of the capability for applications will be discussed.

Xu, Tian-Bing↗
NASA NTRS2007

The Load Capability of Piezoelectric Single Crystal Actuators

Piezoelectric lead magnesium niobate-lead titanate (PMN-PT) single crystal is one of the most promising materials for electromechanical device applications due to its high electrical field induced strain and high electromechanical coupling factor. PMN-PT single crystal-based multilayer stack actuators and multilayer stack-based flextensional actuators have exhibited high stroke and high displacement-voltage ratios. The actuation capabilities of these two actuators were evaluated using a newly developed method based upon a laser vibrometer system under various loading conditions. The measured displacements as a function of mechanical loads at different driving voltages indicate that the displacement response of the actuators is approximately constant under broad ranges of mechanical load. The load capabilities of these PMN-PT single crystal-based actuators and the advantages of the capability for applications will be discussed.

Xu, Tian-Bing↗
NASA NTRS1991

The mechanisms and temperature dependence of superlattice stacking fault formation in the single-crystal superalloy PWA 1480

The mechanism of the formation of superlattice staking faults in the single-crystal nickel-base superalloy PWA 1480 was investigated by observing deformation microstructures in the superalloy single crystals in the temperature range 20-1100 C. Results showed that, in addition to superlattice stacking faults observed after slow strain rate deformation at temperatures from 700 to 950 C, a high-density of superlattice staking faults formed after deformation at 200 C and below. The mechanisms of fault formation, which are different in the high- and the low-temperature regimes, are discussed.

Milligan, Walter W.↗