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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 307 records · Page 17
All sourcesNASA NTRSDOE OSTI
NASA NTRS2009

Lattice-Matched Semiconductor Layers on Single Crystalline Sapphire Substrate

SiGe is an important semiconductor alloy for high-speed field effect transistors (FETs), high-temperature thermoelectric devices, photovoltaic solar cells, and photon detectors. The growth of SiGe layer is difficult because SiGe alloys have different lattice constants from those of the common Si wafers, which leads to a high density of defects, including dislocations, micro-twins, cracks, and delaminations. This innovation utilizes newly developed rhombohedral epitaxy of cubic semiconductors on trigonal substrates in order to solve the lattice mismatch problem of SiGe by using trigonal single crystals like sapphire (Al2O3) as substrate to give a unique growth-orientation to the SiGe layer, which is automatically controlled at the interface upon sapphire (0001). This technology is different from previous silicon on insulator (SOI) or SGOI (SiGe on insulator) technologies that use amorphous SiO2 as the growth plane. A cubic semiconductor crystal is a special case of a rhombohedron with the inter-planar angle, alpha = 90 deg. With a mathematical transformation, all rhombohedrons can be described by trigonal crystal lattice structures. Therefore, all cubic lattice constants and crystal planes (hkl) s can be transformed into those of trigonal crystal parameters. These unique alignments enable a new opportunity of perfect lattice matching conditions, which can eliminate misfit dislocations. Previously, these atomic alignments were thought to be impossible or very difficult. With the invention of a new x-ray diffraction measurement method here, growth of cubic semiconductors on trigonal crystals became possible. This epitaxy and lattice-matching condition can be applied not only to SiGe (111)/sapphire (0001) substrate relations, but also to other crystal structures and other materials, including similar crystal structures which have pointgroup rotational symmetries by 120 because the cubic (111) direction has 120 rotational symmetry. The use of slightly miscut (less than plus or minus 10 deg.) sapphire (0001) substrate can be used to improve epitaxial relationships better by providing attractive atomic steps in the epitaxial process.

Choi, Sang↗
NASA NTRS2011

Modeling Geometric Arrangements of TiO2-Based Catalyst Substrates and Isotropic Light Sources to Enhance the Efficiency of a Photocatalystic Oxidation (PCO) Reactor

The closed confined environments of the ISS, as well as in future spacecraft for exploration beyond LEO, provide many challenges to crew health. One such challenge is the availability of a robust, energy efficient, and re-generable air revitalization system that controls trace volatile organic contaminants (VOCs) to levels below a specified spacecraft maximum allowable concentration (SMAC). Photocatalytic oxidation (PCO), which is capable of mineralizing VOCs at room temperature and of accommodating a high volumetric flow, is being evaluated as an alternative trace contaminant control technology. In an architecture of a combined air and water management system, placing a PCO unit before a condensing heat exchanger for humidity control will greatly reduce the organic load into the humidity condensate loop ofthe water processing assembly (WPA) thereby enhancing the life cycle economics ofthe WPA. This targeted application dictates a single pass efficiency of greater than 90% for polar VOCs. ~ Although this target was met in laboratory bench-scaled reactors, no commercial or SBIR-developed prototype PCO units examined to date have achieved this goal. Furthermore, the formation of partial oxidation products (e.g., acetaldehyde) was not eliminated. It is known that single pass efficiency and partial oxidation are strongly dependent upon the contact time and catalyst illumination, hence the requirement for an efficient reactor design. The objective of this study is to maximize the apparent contact time and illuminated catalyst surface area at a given reactor volume and volumetric flow. In this study, a Ti02-based photocatalyst is assumed to be immobilized on porous substrate panels and illumination derived from linear isotropic light sources. Mathematical modeling using computational fluid dynamics (CFD) analyses were performed to investigate the effect of: 1) the geometry and configuration of catalyst-coated substrate panels, 2) porosity of the supporting substrate, and 3) varying the light source and spacing on contact time and illuminated catalyst area.

Richards, Jeffrey T.↗
NASA NTRSDate not supplied

Effects of Mars Analogue Dust Deposition on DUV Raman Spectra: Implications for the Mars2020 Perserverance Rover SHERLOC Instrument

The Scanning Habitable Environments with Raman & Luminescence for Organics & Chemicals (SHERLOC) instrument suite includes a deep ultraviolet (DUV) Raman and fluorescence instrument on the robotic arm of the Mars2020 (M2020) Perseverance rover [1]. When sufficiently thick dust coatings are present, substrate surfaces are not detected, and mineralogical information not obtained. For example, the effect of palagonitic dust coatings as a function of depth to various substrates on thermal emission, VNIR, and Mössbauer spectra are reported by [2, 3]. In this study, we use the same palagonitic dust to study the effect of dust coating thickness on DUV Raman spectra.

N. C. Haney↗
NASA NTRS1982

On the cause of the flat-spot phenomenon observed in silicon solar cells at low temperatures and low intensities

A model is presented that explains the "flat-spot" (FS) power loss phenomenon observed in silicon solar cells operating deep space (low temperature, low intensity) conditions. Evidence is presented suggesting that the effect is due to localized metallurgical interactions between the silicon substrate and the contact metallization. These reactions are shown to result in localized regions in which the PN junction is destroyed and replaced with a metal-semiconductor-like interface. The effects of thermal treatment, crystallographic orientation, junction depth, and metallurization are presented along with a method of preventing the effect through the suppression of vacancy formation at the free surface of the contact metallization. Preliminary data indicating the effectiveness of a TiN diffusion barrier in preventing the effect are also given.

Weizer, V. G.↗
NASA NTRS1982

On the cause of the flat-spot phenomenon observed in silicon solar cells at low temperatures and low intensities

A model is presented that explains the 'flat-spot' power-loss phenomenon observed in silicon solar cells operating under deep space (low temperature, low intensity) conditions. Evidence is presented suggesting that the effect is due to localized metallurgical interactions between the silicon substrate and the contact metallization. These reactions are shown to result in localized regions in which the PN junction is destroyed and replaced with a metal-semiconductor-like interface. The effects of thermal treatment, crystallographic orientation, junction depth, and metallization are presented along with a method of preventing the effect through the suppression of vacancy formation at the free surface of the contact metallization. Preliminary data indicating the effectiveness of a TiN diffusion barrier in preventing the effect are also given.

Weizer, V. G.↗
NASA NTRS1982

On the cause of the flat-spot phenomenon observed in silicon solar cells at low temperatures and low intensities

A model that explains the flat-spot power loss phenomenon is presented. Evidence suggests that the effect is due to localized metallurgical interactions between the silicon substrate and the contact metallization. These reactions are shown to result in localized regions in which the P-N junction is destroyed and replaced with a metal semiconductor-like interface. The effects of thermal treatment, crystallographic orientation, junction depth, and metallization are shown along with a method of preventing the effect through the suppression of vacancy formation at the free surface of the contact metallization. Data indicating the effectiveness of a TiN diffusion barrier in preventing the effect are also given.

Weizer, V. G.↗
NASA NTRS1999

Population of Nitrifying Bacteria and Nitrification in Ammonium Saturated Clinoptilolite

As humans begin to spend longer periods of time in space, plants will be incorporated into life support systems. Ammonium saturated clinoptilolite is one plant growth substrate but a balance between ammonium and nitrate is needed. A laboratory study was conducted to determine effects of nitrifying bacteria on ammonium concentrations and kinetics of nitrification. Columns containing clinoptilolite substrate amended with nitrifying bacteria obtained from soil enrichment were analyzed weekly for a 90 day period. The enrichment culture initially contained 1 x 10(exp 5) ammonium oxidizing bacteria and 1 x 10(exp 2) nitrite oxidizing bacteria per gram of substrate. Populations of ammonium oxidizing bacteria increased to 1 x 10(exp 6) and nitrite oxidizing bacteria increased to 1 x 10(exp 3) per gram of substrate. The nitrification rate was approximately 0.25mg NO3(-)-N/kg.hr. Experiments were also conducted to enumerate nitrifying bacteria in a clinoptilolite substrate used to grow wheat (Triticum aestivum L.). Seventy days following the initial inoculation with an unknown number of commercial nitrifying bacteria, 1 x 10(exp 5) ammonium oxidizing bacteria per gram of substrate were present. The number of nitrite oxidizing bacteria was between 1 x 10(exp 3) to 10(exp 4) per gram of substrate as measured by the most probable number method. Nitrification rates were approximately 0.20mg NO3(-)-N/kg.hr. Clinoptilolite readily exchanged sufficient concentrations of ammonium to support nitrifying bacteria and they survived well in this medium.

McGilloway, R. L.↗
NASA NTRS1993

Degradation of optical components in space

This report concerns two types of optical components: multilayer filters and mirrors, and self-scanned imaging arrays using charge coupled device (CCD) readouts. For the filters and mirrors, contamination produces a strong reduction in transmittance in the ultraviolet spectral region, but has little or no effect in the visible and infrared spectral regions. Soft substrates containing halides are unsatisfactory as windows or substrates. Materials choice for dielectric layers should also reflect such considerations. Best performance is also found for the harder materials. Compaction of the layers and interlayer diffusion causes a blue shift in center wavelength and loss of throughput. For sensors using CCD's, shifts in gate voltage and reductions in transfer efficiency occur. Such effects in CCD's are in accord with expectations of the effects of the radiation dose on the device. Except for optical fiber, degradation of CCD's represents the only ionizing-radiation induced effect on the Long Duration Exposure Facility (LDEF) optical systems components that has been observed.

Blue, M. D.↗
NASA NTRS1974

Capacitor bonding techniques and reliability

The effect of thermal cycling on the mechanical failure of bonded ceramic chip capacitors mounted on alumina substrates is studied. It is shown that differential thermal expansion is responsible for the cumulative effects which lead to delayed failure of the capacitors. Harder or higher melting solders are found to be less susceptible to thermal cycling effects, although they are more likely to fail during initial processing operations.

Kinser, D. L.↗
NASA NTRS1987

Material growth and characterization for solid state devices

During this period InGaAs and InGaAsP were grown on (100)InP by liquid phase electroepitaxy (LPEE). Results of the epitaxial growth of InGaAs on sputtered quartz masked substrates are presented. The resulting surface morphology can be related to the current density distribution near the edges of a masked pattern. The quaternary InGaAs was grown with compositions corresponding to 1.3 micron and 1.5 micron emission wavelengths. Growth rates were found to be linearly dependent upon current density, and a strong dependence upon composition was noted. These compositions lie in the miscibility gap region of the alloy phase diagram at the 645 C growth temperature. Growths were performed at 685 C to avoid the miscibility gap. Epilayers were characterized by photoluminescence, X-ray diffraction, secondary ion mass spectrometry, and Hall effect measurements. Aluminum oxide was deposited on silicon and InGaAs substrates for the characterization of this material as an insulator in a field effect transistor structure. It was determined that the results did not warrant further work with the deposition from an aluminum isopropoxide source. A metallographic vapor phase epitaxy system installation is nearing completion for use in hybrid III-V semiconductor epilayer growths.

Collis, Ward J.↗
NASA NTRS1982

EMR Gage Would Measure Coal Thickness Accurately

Laboratory tests indicate electron magnetic resonance (EMR) would be effective in measuring thickness of coal overlying rock substrate. In prototype dual-frequency EMR system, Sample is irradiated by two radio frequencies. Signals are mixed, producing sum and difference output frequencies that are detected by receiver. Magnetic field is varied to scan resonant spot through sample. In system designed for field use, electromagnet is U-shaped, so that sample can be adjacent to, rather than inside the probe. Same coil is used for transmitting and receiving.

King, J. D.↗
NASA NTRS1983

Thermomechanical loading of multilayered cylindrical geometries in thermal cycling from 300 to 1300 K

The principal of multiple material layering is well known as an effective method of reducing heat transfer; however, thermal gradients can impose significant loads and lead to delamination and subsequent component failure. An analysis is developed and experimental data are discussed for the thermomechanical effects of multilayered materials on a heat sink substrate of cylindrical geometry subject to thermal cycling. The geometry is heated in cross-flow by a high-velocity flame and cooled in crossflow by ambient-temperature air from a critical flow orifice. Each layer of material possesses a threshold beyond which small changes in temperature or mechanical loading greatly influence the life in thermal cycling of the layered materials. Comparisons are made between the thermomechanical loads predicted by various numerical codes for the linear case and by a simplified analytic model.

Hendricks, R. C.↗
NASA NTRS1984

Hyper-gravitational effects on metabolism and thermoregulation

Animal hypergravitational effects on metabolism and thermoregulation was studied. The two major problem areas investigated are: initial and short-term exposure effects, and chronic, long-term exposure effects involving developmental and adaptational effects. Investigations focused on: (1) quantifying changes in thermoregulation with graded G-intensities in rats; (2) further delineating the effects of duration on gluconeogenesis, gluconeogenic hormones and substrates, and glucose homeostasis; and (3) reproduction and neonatal survival rates under different G-intensities.

Oyama, J.↗
NASA NTRS1987

Catalysts for long-life closed-cycle CO2 lasers

Long-life, closed-cycle operation of pulsed CO2 lasers requires catalytic CO-O2 recombination both to remove O2, which is formed by discharge-induced CO2 decomposition, and to regenerate CO2. Platinum metal on a tin (IV) oxide substrate (Pt/SnO2) has been found to be an effective catalyst for such recombination in the desired temperature range of 25 to 100 C. This paper presents a description of ongoing research at NASA-LaRC on Pt/SnO2 catalyzed CO-O2 recombination. Included are studies with rare-isotope gases since rare-isotope CO2 is desirable as a laser gas for enhanced atmospheric transmission. Results presented include: (1) achievement of 98% to 100% conversion of a stoichiometric mixture of CO and O2 to CO2 for 318 hours (greater than 1 x 10 to the 6th power seconds), continuous, at a catalyst temperature of 60 C, and (2) development of a technique verified in a 30-hour test, to prevent isotopic scrambling when CO-18 and O-18(2) are reacted in the presence of a common-isotope Pt/Sn O-16(2) catalyst.

Schryer, David R.↗
NASA NTRS1987

Research on catalysts for long-life closed-cycle CO2 laser oaperation

Long-life, closed-cycle operation of pulsed CO2 lasers requires catalytic CO-O2 recombination both to remove O2, which is formed by discharge-induced CO2 decomposition, and to regenerate CO2. Platinum metal on a tin-oxide substrate (Pt/SnO2) has been found to be an effective catalyst for such recombination in the desired temperature range of 25 to 100 C. This paper presents a description of ongoing research at NASA-Langley on Pt/SnO2 catalyzed CO-O2 recombination. Included are studies with rare-isotope gases since rare-isotope CO2 is desirable as a laser gas for enhanced atmospheric transmission. Results presented include: (1) the effects of various catalyst pretreatment techniques on catalyst efficiency; (2) development of a technique, verified in a 30-hour test, to prevent isotopic scrambling when C(O-18) and (O-18)2 are reacted in the presence of a common-isotope Pt/Sn(O-16)2 catalyst; and (3) development of a mathematical model of a laser discharge prior to catalyst introduction.

Sidney, Barry D.↗
NASA NTRS1992

Image quality, space-qualified UV interference filters

The progress during the contract period is described. The project involved fabrication of image quality, space-qualified bandpass filters in the 200-350 nm spectral region. Ion-assisted deposition (IAD) was applied to produce stable, reasonably durable filter coatings on space compatible UV substrates. Thin film materials and UV transmitting substrates were tested for resistance to simulated space effects.

Mooney, Thomas A.↗
NASA NTRS1993

Silica Precursors Derived From TEOS

Two high-char-yield polysiloxane polymers developed. Designated as TEOS-A and TEOS-B with silica char yields of 55% and 22%, respectively. These free-flowing polymers are Newtonium liquids instead of thick gels. Easily synthesized by controlled hydrolysis of inexpensive tetraethoxysilane (TEOS). Adhesive properties of TEOS-A suggest its use as binder for fabrication of ceramic articles from oxide powders. Less-viscous and more-fluid lower-molecular-weight TEOS-B used to infiltrate already-formed porous ceramic compacts to increase densities without effecting shrinkage. Also used as paint to coat substrate with silica, and to make highly pure silicate powders.

Philipp, Warren H.↗
NASA NTRS1993

GaAs-based optoelectronic neurons

An integrated, optoelectronic, variable thresholding neuron implemented monolithically in GaAs integrated circuit and exhibiting high differential optical gain and low power consumption is presented. Two alternative embodiments each comprise an LED monolithically integrated with a detector and two transistors. One of the transistors is responsive to a bias voltage applied to its gate for varying the threshold of the neuron. One embodiment is implemented as an LED monolithically integrated with a double heterojunction bipolar phototransistor (detector) and two metal semiconductor field effect transistors (MESFET's) on a single GaAs substrate and another embodiment is implemented as an LED monolithically integrated with three MESFET's (one of which is an optical FET detector) on a single GaAs substrate. The first noted embodiment exhibits a differential optical gain of 6 and an optical switching energy of 10 pJ. The second embodiment has a differential optical gain of 80 and an optical switching energy of 38 pJ. Power consumption is 2.4 and 1.8 mW, respectively. Input 'light' power needed to turn on the LED is 2 micro-W and 54 nW, respectively. In both embodiments the detector is in series with a biasing MESFET and saturates the other MESFET upon detecting light above a threshold level. The saturated MESFET turns on the LED. Voltage applied to the biasing MESFET gate controls the threshold.

Lin, Steven H.↗