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At least 307 records · Page 17

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NASA NTRS1980

A cellular glass substrate solar concentrator

The design of a second generation point focusing solar concentration is discussed. The design is based on reflective gores fabricated of thin glass mirror bonded continuously to a contoured substrate of cellular glass. The concentrator aperture and structural stiffness was optimized for minimum concentrator cost given the performance requirement of delivering 56 kWth to a 22 cm diameter receiver aperture with a direct normal insolation of 845 watts sq m and an operating wind of 50 kmph. The reflective panel, support structure, drives, foundation and instrumentation and control subsystem designs, optimized for minimum cost, are summarized. The use of cellular glass as a reflective panel substrate material is shown to offer significant weight and cost advantages compared to existing technology materials.

Bedard, R.↗

NASA NTRS1982

High-Efficiency Solar Cells on Low-Cost Substrates

High-efficiency solar cells made in thin epitaxial films grown on low-cost commercial silicon substrates. Cost of cells is much less than if high-quality single-crystal silicon were used for substrates and performance of cells is almost as good.

Daiello, R. V.↗

NASA NTRS1983

Wipe Melt for InP Seed Substrate

Seed substrate pulled under InGaAsP wipe melt at temperature of 650 degrees C for approximately 15 to 60 seconds. After pullthrough and meltback, surface has high smoothness and luster without meniscus lines, exaggerated erosion, pits, and pearls characteristic of other wipe melts. Layer-to-substrate interface structure is more planar and of better quality. New combination of elements leaves smooth high luster surface.

Hawrylo, F. Z.↗

NASA NTRS1981

Investigation into the role of NaCl deposited on oxide and metal substrates in the initiation of hot corrosion

Morphological aspects of the conversion to Na2SO4 of NaCl deposits over the temperature range 500-700 C, in air with added SO2 and H2O. Progress of the reaction was observed by withdrawing samples at various times and examining them under the scanning electron microscope using EDAX to assess the extent of chloride to sulfate conversion. These initial results show that the conversion to Na2SO4 proceeds directly on the sodium chloride surface as well as on the surrounding substrate due to evaporation of NaCl from the solid particle. The mechanism of this reaction could involve reaction in the vapor to produce Na2SO4 which then deposits, alternatively Na2SO4 could form directly on the substrate surface due to direct reaction there between the vapors NaCl, SO2 and O2.

Birks, N.↗

NASA NTRS1982

Progress toward thin-film GaAs solar cells using a single-crystal Si substrate with a Ge interlayer

Development of a technology for fabricating light-weight, high-efficiency, radiation-resistant solar cells for space applications is reported. The approaches currently adopted are to fabricate shallow homojunction n(+)/p as well as p/n AlGaAs-heteroface GaAs solar cells by organometallic chemical vapor deposition (OM-CVD) on single-crystal Si substrates using in each case, a thin Ge epi-interlayer first grown by CVD. This approach maintains the advantages of the low specific gravity of Si as well as the high efficiency and radiation-resistant properties of the GaAs solar cell which can lead to greatly improved specific power for a solar array. The growth of single-crystal GaAs epilayers on Ge epi-interlayers on Si substrates is investigated. Related solar cell fabrication is reviewed.

Yeh, Y. C. M.↗

NASA NTRS1983

X-ray photoelectron spectroscopic study of the oxide removal mechanism of GaAs /100/ molecular beam epitaxial substrates in in situ heating

A standard cleaning procedure for GaAs (100) molecular beam epitaxial (MBE) substrates is a chemical treatment with a solution of H2SO4/H2O2/H2O, followed by in situ heating prior to MBE growth. X-ray photoelectron spectroscopic (XPS) studies of the surface following the chemical treatment show that the oxidized As is primarily As(+ 5). Upon heating to low temperatures (less than (350 C) the As(+ 5) oxidizes the substrate to form Ga2O3 and elemental As, and the As(+ 5) is reduced to As(+ 3) in the process. At higher temperatures (500 C), the As(+ 3) and elemental As desorb, while the Ga(+ 3) begins desorbing at about 600 C.

Vasquez, R. P.↗

NASA NTRS1983

Cleaning chemistry of GaAs(100) and InSb(100) substrates for molecular beam epitaxy

Ploog (1980) and Bachrach and Krusor (1981) have pointed out the importance of substrate preparation and surface cleaning for obtaining high quality films with the aid of molecular beam epitaxial growth techniques. In the present investigation, high resolution X-ray photoemission (XPS) is used to determine the oxide removal mechanism for GaAs(100) substrates which have undergone a standardized cleaning procedure. Other objectives of the investigation are related to a comparison of different cleaning procedures in order to minimize carbon contamination, the extension of these cleaning techniques to other III-V compound semiconductors such as InSb, and the evaluation of the sensitivity of the compositional results to electron-induced damage effects.

Vasquez, R. P.↗

NASA NTRS1985

Characteristic Impedance of a Wide Slot Line on Low Permittivity Substrates

Computed results on the characteristic impedance of wide slots etched on an electrically thin substrate of low dielectric constant epsilon sub r are presented. Results are given for epsilon sub r = 2.22, 3.0, 3.8 and 9.8. Comparison is shown for the characteristic impedance between the present calculations and those available in the literature for high-epsilon sub r substrates.

Janaswamy, R.↗

NASA NTRS1986

Characteristic impedance of a wide slot line on low permittivity substrates

Computed results on the characteristics impedance of wide slots etched on an electrically thin substrate of low dielectric constant epsilon sub r are presented. These results are used to help provide design data for slotlines. Curves are presented for epsilon sub r = 2.22, 3.0, 3.8, and 9.8. Comparison is shown for the characteristic impedance between the present calculations and those available in the literature for high-epsilon sub r substrates. Empirical formulas, based on least square curve fitting, are presented for the normalized slot wavelength lambda prime/lambda sub 0 and the characteristic impedance Z sub 0 over the range: 0.0015 is equal to or less than W/lambda sub 0 equal to or less than 1.0, 0.006 is equal to or less than d/lambda sub 0 equal to or less than 0.06, 2.22 is equal to or less than epsilon sub 0 equal to or less than 9.8.

Janaswamy, R.↗

NASA NTRS1984

Substrate heating rates for planar and cylindrical-post magnetron sputtering sources

Results are presented for the substrate heating energy/atom required in the planar magnetron sputtering of Al, Cr, Ni, Cu, Mo, In, Ta, W, and Pt in Ar, as well as Al and Cr in O2. Data are also obtained for cylindrical magnetron sputtering of Nb, Ag, Ta, W, and Pb-Sn in Ar, and Mo sputtered in Ne, Ar, Kr, and Xe. Planar and cylindrical magnetron heating rates were comparable. Special experiments were conducted to examine the contributions to substrate heating of plasma species and ion neutralization and reflection at the cathode; the results obtained indicate that charged plasma species do not significantly contribute to the heating, but that neutralized and reflected ions play a significant role in the planar as well as cylindrical cases despite the differences in cathode geometry.

Thornton, J. A.↗

NASA NTRS1986

Input impedance of a probe-fed circular microstrip antenna with thick substrate

A method of computing the input impedance for the probe fed circular microstrip antenna with thick dielectric substrate is presented. Utilizing the framework of the cavity model, the fields under the microstrip patch are expanded in a set of modes satisfying the boundary conditions on the eccentrically located probe, as well as on the cavity magnetic wall. A mode-matching technique is used to solve for the electric field at the junction between the cavity and the coaxial feed cable. The reflection coefficient of the transverse electromagnetic (TEM) mode incident in the coaxial cable is determined, from which the input impedance of the antenna is computed. Measured data are presented to verify the theoretical calculations. Results of the computation of various losses for the circular printed antenna as a function of substrate thickness are also included.

Davidovitz, M.↗

NASA NTRS1986

Characteristic impedance of a wide slotline on low-permittivity substrates

Janaswamy, R.↗

NASA NTRS1986

Reactions occurring during the sulfation of sodium chloride deposited on alumina substrates

The reaction between solid NaCl and air containing 1 pct SO2 has been studied between 500 and 700 C. The reaction product, Na2SO4, forms not only on the surface of the NaCl but also on surrounding areas of the substrate due to the volatility of the NaCl at these temperatures. At the higher temperatures, the vapor pressure of NaCl is so high that the majority of the reaction product is distributed on the substrate. Above 625 C, the reaction product is a liquid solution of NaCl and Na2SO4 that exists only so long as NaCl is supplied from the original crystal source. Eventually, the liquid solidifies by constitutional solidification as the NaCl is converted to Na2SO4. While it exists, the liquid NaCl-Na2SO4 solution is shown to be highly corrosive to Al2O3 and, on a scale of Al2O3 growing on alloy HOS 875, particularly attacks the grain boundaries of the scale at preferred sites where chromium and iron oxides and sulfides rapidly develop. This is proposed as one mechanism by which NaCl deposition contributes to the initiation of low temperature hot corrosion.

Wu, C. S.↗

NASA NTRS1987

Microstrip dispersion including anisotropic substrates

A perturbation-iteration solution based on potential theory is develoepd for determining the effective dielectric constant, characteristic impedance, and current-charge distribution on a microstrip transmission line with isotropic and anisotropic substrates. The numerical implementation of the theory is described and is suitable for use on a personal computer. Computed data for several common substrate materials are included.

Kretch, Brian E.↗

NASA NTRS1987

Observations and consequences of nonuniform aluminum concentrations in the channel regions of AlGaAs channeled-substrate-planar lasers

Compositional changes in the n-clad layer within the channel region of channel substrate planar (CSP) type semiconductor lasers have been observed. As a consequece, a large optical cavity (LOC) or an enhanced substrate loss (ESL) version of the CSP geometry may result, both of which may have significantly different characteristics from those of a conventional CSP laser. The CSP-LOC generally has a larger near-field spot size, while the ESL-CSP is characterized by an off-axis, asymmetric far-field pattern.

Evans, Gary A.↗

NASA NTRS1988

Secondary ion mass spectrometry study of ex situ annealing of epitaxial GaAs grown on Si substrates

Samples of epitaxial GaAs grown on (100) Si substrates using molecular beam epitaxy were annealed at four different temperatures, from 800 to 950 C. Following annealing, the samples were analyzed using secondary ion mass spectrometry. Depth profiles of Ga, As, and Si reveal optimum conditions for annealing, and place a lower limit on a damage threshold for GaAs/Si substrates.

Radhakrishnan, G.↗

NASA NTRS1988

Molecular beam epitaxy and metalorganic chemical vapor deposition growth of epitaxial CdTe on (100) GaAs/Si and (111) GaAs/Si substrates

Epitaxial CdTe has been grown on both (100)GaAs/Si and (111)GaAs/Si substrates. A combination of molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD) has been employed for the first time to achieve this growth: the GaAs layers are grown on Si substrates by MBE and the CdTe film is subsequently deposited on GaAs/Si by MOCVD. The grown layers have been characterized by X-ray diffraction, scanning electron microscopy, and photoluminescence.

Nouhi, A.↗

NASA NTRS1988

Radiation characteristics of a source in a thin substrate mounted over a dielectric medium

The radiation pattern of a line source is calculated for the case in which the source is lying on the top or the bottom surface of a lossless dielectric substrate that is mounted on the top of semiinfinite dielectric medium. It is found that in both cases the pattern along the interfaces has a null; that the pattern in the upper semiinfinite medium has a single lobe; and that the pattern in the lower semiinfinite medium has many lobes, the number of which varies with the substrate thickness. In both cases, the power radiated into the lower medium is more than that radiated into the upper medium. Applications of this calculation to remote sensing, microstrip antenna technology, and antenna arrays are discussed.

Engheta, Nader↗