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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 307 records · Page 17
All sourcesNASA NTRSDOE OSTI
NASA NTRS1993

An Unipolar Terminal-Attractor Based Neural Associative Memory with Adaptive Threshold and Perfect Convergence

For the first time, a unipolar terminal-attractor based neural associative memory (TABAM)system with adaptive threshold and perfect convergence is presented. By adaptively setting thethreshold values for the dynamic iteration for the unipolar binary neuron states with terminal-attractors and inner-product approach, we demonstrate via computer simulation the achievement ofperfect convergence and correct retrieval. The simulation is completed with a small number of storedstates (M) and a small number of neurons (N) but a large M/N ratio. An experiment with exclusive-or logic operation using LCTV SLMs is used to show feasibility of the optoelectronic implementationof the models.

Associative↗
DOE OSTI2024

Increased Static Charge–Induced Threshold Voltage Shifts and Memristor Activity in Pentacene OFETs Comprising Polystyrene–Based Gate Dielectrics Containing Electroactive Small Molecule Crystallites

Top-contact bottom-gate pentacene OFETs are fabricated with single layer dielectrics comprised of either polystyrene (PS), poly(4-methylstyrene) (P4MS), or poly(4-tert-butylstyrene) (P4TBS). The polystyrenes are blended with varying concentrations of two different small molecules, dibenzotetrathiafulvalene (DBTTF) and 2,8-difluoro-5,11-bis(triethylsilylethynyl)anthradithiophene (diF-TES-ADT), to form small, separated crystallites contained throughout the polymer dielectric layer. The OFET characteristics of these devices are investigated and their threshold voltage shifts are measured after –70 V static charging for 5 min. Two-terminal measurements are conducted using multiple different gate biases in the range of –50 to +50 V to investigate memristor behavior in the devices. OFETs containing DBTTF exhibited ΔVth increases as large as 330% relative to control OFETs containing no DBTTF, while OFETs containing at least 7.5 wt.% DBTTF exhibited memristor activity, with currents ranging from 20 nA to 44 µA depending on the applied bias. Furthermore, this work demonstrates that including small, separated crystallites in polymer dielectrics enhances their charge storage ability and can be promising for creating nonbinary memory devices for data processing. Additionally, the observed memristor activity indicates the OFETs in this work can be used in development of neuromorphic systems that aim to mimic the synaptic behavior of the human nervous system.

25 ENERGY STORAGE↗
DOE OSTI2024

Enhanced Laser Damage Threshold in Optically Addressable Light Valves via Aluminum Nitride Photoconductors

Abstract Optically addressable light valves (OALVs) are specialized optical components utilized for spatial beam shaping in various laser‐based applications, including optics damage mitigation, and enhanced functionality in diode‐based additive manufacturing requiring high intensities. Current state‐of‐the‐art OALVs employ photoconductors such as Bismuth Silicon Oxide (BSO) or Bismuth Germanium Oxide (BGO), which suffer from limited laser‐induced damage thresholds (LiDT) and inadequate thermal conductivities, thus restricting their use in high peak and average power applications. Aluminum nitride (AlN), an emerging ultra‐wide band gap (UWBG) III–V semiconductor, offers promising optoelectronic properties and superior thermal conductivity (>300 Wm −1 K −1 at 298° K, compared to BSO's 3.29 Wm −1 K −1 ). In this study, the first AlN‐based OALVs are designed, fabricated, and experimentally demonstrated using commercially available single‐crystal AlN substrates. These AlN‐based OALVs have shown clear superiority over BSO and BGO‐based devices. Design considerations for OALVs incorporating UWBG photoconductors are discussed, and the photoresponsivity from defect‐mediated sub‐bandgap absorption in AlN crystals is verified as sufficient for OALVs operating under high light fluences. The optimum driving voltage for the AlN‐based OALV is determined to be ≈ 45 V pp at 100 Hz, achieving a transmittance of 91.3%, an extinction ratio (ER) of more than 100, and a 51:1 image contrast.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Deployment and performance of a Low-Energy-Threshold Skipper-CCD inside a nuclear reactor

Charge Coupled Devices (CCD) are being used for reactor neutrino experiments and have already demonstrated their potential in constraining new physics models. The prospect of a Skipper-CCD experiment looking for standard and beyond standard model (BSM) physics in a nuclear reactor has been evaluated for different benchmark scenarios. Here, we report the first installation of a 2-g Skipper-CCD inside the containment building of a 2 GW th nuclear power plant and analyze its performance throughout its first 18 months of operation. The sensor was successfully deployed at Atucha II, in Argentina, 12 meters away from the center of the reactor core. We discuss the challenges involved in the commissioning of the detector and present data acquired during reactor ON and reactor OFF periods, with the sensor functioning with a sub-electron readout noise of 0.17 e - . Based on an exposure of 56.8 g day reactor ON and two reactor OFF data sets with a total exposure of 118.1 g day we characterize the system and evaluate the sensitivity to CEvNS. We achieved a background rate of 33 kdru and a low threshold of 45 eV ee . The ongoing efforts to improve sensitivities to CEvNS and BSM interaction are also discussed.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2026

Oxide nucleation via threshold-driven volume instability in Ni oxidation

Oxide nucleation dictates the onset of metal oxidation, yet the atomistic pathways bridging initial oxygen adsorption to bulk phase transformation remain elusive. Here, we utilize in-situ atomic-resolution imaging to directly capture the nucleation of nickel oxide, revealing a threshold-driven, cooperative transformation of Ni into NiO. Our observations identify a distinct incubation period during which oxygen progressively accumulates in subsurface layers. Once a critical concentration and penetration depth are reached, a collective lattice reconfiguration is triggered, abruptly converting multiple Ni layers into NiO. Atomistic simulations corroborate this mechanism, identifying a cooperative lattice instability induced by subsurface oxygen saturation. These results establish subsurface oxygen incorporation as the missing mechanistic link between surface adsorption and three-dimensional oxide formation, providing an atomistic framework to understand and control reactive phase transformations in materials synthesis, catalysis, and degradation.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Estimation of post-burst vibration-induced fuel dispersal thresholds following LOCA-simulant testing

The nuclear industry intends to increase burnup past the regulatory limit of 62 GWd/MTU, and to be successful, the dispersal behavior of fragmented high-burnup fuel during loss-of-coolant accidents must be better understood. Part of this behavior is fuel fragmentation, relocation, and dispersal. This work reports on testing concerning the dispersal of fuel from rods following burst and pressure blowdown through the burst. The Fuel Relocation Induced by Accident Recovery (FRIAR) system was used to examine surrogate material and pre-burst cladding specimens to evaluate the effects of vibrational loading, mixture composition, and burst size on post-burst dispersal. Vibrational loading resulted in maximum dispersal around 15 Hz when the loading was performed with peak-to-peak oscillation amplitudes at 0.5 and 1 mm. Here, under this aggressive vibrational loading, dispersal was found to become significant as burst widths increased to approximately 5 mm and larger. However, below 4 mm widths, little material dispersed out of the opening, even at 1 mm amplitudes and for more dispersive mixtures (smaller average fragments). At and above 7 mm widths, dispersal was rapid for all mixtures. Finally, dispersal in the threshold region (4–5 mm wide bursts) strongly depended on the mixture. For mixtures with large fragments, dispersal was minimized to a few fragments, as the large fragments proved to be effective at minimizing dispersal. Conversely, mixtures with smaller fragments showed increased dispersal in this region.

Burst geometry↗