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At least 307 records · Page 17

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NASA NTRS1980

The influence of a voltage ramp on the measurement of I-V characteristics of a solar cell

For efficiency and convenience the voltage applied to a Si solar cell is often fairly rapidly driven from zero to the open circuit value typically at a common rate of 1 V per millisecond. During this time the values of current are determined as a function of the instantaneous voltage thus producing an I-V characteristic. The present paper shows that the customary expressions for the current as a function of cell parameters still remain valid provided that the diffusion length in the expression for the dark current is changed from its steady state value L to the effective diffusion length L1 given by L1 = L(1 + qV/kT.tau) to the -1/2, where V is the ramp rate considered constant and tau is the lifetime of minority carriers. This result is true to a very good approximation provided that low level injection prevails.

Von Roos, O.↗

NASA NTRS1982

Use of the Charge/Discharge (C/D) ratio to aument voltage limit (V sub T) charge control in the ERBS spacecraft

A 50-ampere hour nickel cadmium cell test pack was operated in a power profile simulating the orbit of the Earth Radiation Budget Satellite (ERBS). The objective was to determine the ability of the temperature compensated voltage limit (V sub T) charge control system to maintain energy balance in the half sine wave-type current profile expected of this mission. The four-cell pack (50 E) was tested at the Naval Weapons Support Center (NWSC) at Crane, Indiana. The ERBS evaluation test consisted of two distinct operating sequences, each having a specific purpose. The first phase was a parametric test involving the effect of V sub T level, temperature, and Beta angle on the charge/discharge (C/D) ratio, an indicator of the amount of overcharge. The second phase of testing made use of the C/D ratio limit to augment the V sub T charge limit control. When the C/D limit was reached, the current was switched from the taper mode to a C/67 (0.75 A) trickle charge. The use of an ampere hour integrator limiting the overcharge to a C/67 rate provided a fine tuning of the charge control technique which eliminated the sensitivity problems noted in the initial operating sequence.

Halpert, G.↗

NASA NTRS1982

3-D supersonic combustion experiments with hydrogen in V-trough

Both supersonic blowdown and free jet wind tunnels were used in oil flow visualization and hydrogen gas burning tests of 60- and 90-deg V-shaped trough combustion characteristics. Oil dots showed that mass outflow from the reattachment region at the bottom of the V-trough dominated flow behavior, and occupied the trough's entire length and 10% of its cross-section. Intermingled vortex pairs were also found to superimpose themselves upon the outflow, and hydrogen burning within troughs reduced missile base drag by 25%. The troughs were aligned so that their long dimensions were parallel to the airflow, and the two top edges of the V section were mounted flush with respect to the upstream flat surfaces. Step heights tested ranged from 3.4 mm to 6.25 cm.

Friedberg, R. A.↗

NASA NTRS1982

E/B - V/ extinction values for 24 planetary nebulae derived from IUE data

Excellent agreement was found for E(B - V) values for nine planetary nebulae observed in common by IUE and ANS, derived from a strong 2200A absorption feature. E(B - V) values for seven additional objects with moderately strong 2200A absorption were determined. A third group of eight planetary nebulae for which the 2200A absorption feature is marginal or absent had E(B - V) extinctions determined from the observed He II I(1640A)/I(4686A) ratio. A comparison with optical and radio data is included.

Feibelman, W. A.↗

NASA NTRS1983

A split delta-V technique for drift control of geosynchronous spacecraft

A split-delta-V technique is presented for the east-west stationkeeping of geosynchronous spacecraft using the linearized optimal transfer strategies for near-circular coplanar orbits. The maneuvers are carried out by taking advantage of the dynamics of the spacecraft in order to cancel out the effect of the drift accumulated between successive impulsive delta-V's. A stability analysis is then carried out in order to determine the effect of implementing a series of precanned maneuvers at the end of each drift cycle in an autonomous mode by taking into account initial orbit determination uncertainties and execution errors emanating from each delta-V. It is shown that small tolerance deadbands are violated after only a few cycles and the system is unstable.

Kechichian, F. A.↗

NASA NTRS1983

Simulation of auroral current sheet equilibria and associated V-shaped potential structures

Results from numerical simulations of auroral current sheet equilibria and associated V-shaped potential structures are presented. It is shown that with allowance for both hot magnetospheric ion and cold ionospheric ion populations, the perpendicular potential drop, Phi(m), associated with a non-neutral auroral current sheet is critically controlled by the temperature of the 'heated' ionospheric ions. The heating is caused by the wave turbulence excited by the auroral current sheet. In the presence of heated ionospheric ions, a relatively large variation in the temperature of the hot magnetospheric ion population causes a very small variation in the potential drop Phi(m). The perpendicular potential drop acts to produce a V-shaped double layer with multiple potential steps parallel to the magnetic field when a zero potential boundary condition is imposed at the ionospheric boundary. Outside the V-shaped potential structure, ionospheric return currents develop self-consistently.

Singh, N.↗

NASA NTRS1982

Use of column V alkyls in organometallic vapor phase epitaxy (OMVPE)

The use of the column V-trialkyls trimethylarsenic (TMAs) and trimethylantimony (TMSb) for the organometallic vapor phase epitaxy (OM-VPE) of III-V compound semiconductors is reviewed. A general discussion of the interaction chemistry of common Group III and Group V reactants is presented. The practical application of TMSb and TMAs for OM-VPE is demonstrated using the growth of GaSb, GaAs(1-y)Sb(y), Al(x)Ga(1-x)Sb, and Ga(1-x)In(x)As as examples.

Ludowise, M. J.↗

NASA NTRS1984

Laboratory discharge studies of a 6 V alkaline lantern-type battery Eveready Energizer no. 528, under various ambient temperatures (-15 deg C and + 22 deg C) and loads (30 omega and 60 omega)

The voltages of two Eveready No. 528 batteries, one the test battery, the other the control battery, were simultaneously recorded as they were discharged across 30 omega loads using a dual chart recorder. The test battery was initially put in a freezer at -15 + or - 3 C. After its voltage had fallen to .6 V, it was brought back out into the room at 22 + or - 3 C. A second run was made with 60 omega loads. Assuming a 3.0 V cut-off, the total energy output of the test battery at -15 C was 26 WHr 30 omega and 35 WHr 60 omega, and the corresponding numbers for the control battery at 22 C were 91 WHr and 100 WHr. When the test battery was subsequently allowed to warm up, the voltage rose above 4 V and the total energy output rose to 80 WHr 30 omega and 82 WHR 60 omega.

Ahrens, S. T.↗

NASA NTRS1983

Simulation of the Galileo spacecraft axial - Delta-V algorithm

Preliminary results are presented from the analysis of the Galileo spacecraft axial delta-V algorithm. The Galileo spacecraft is a dual spin interplanetary spacecraft which will study the four Galilean moons of Jupiter as well as the Jovian environment and atmosphere. In order to achieve orbit about Jupiter and accurately deliver the probe to the planet's upper atmosphere, the Galileo spacecraft must be capable of performing many trajectory corrections or delta-V maneuvers. Twelve 10 Newton thrusters and one 400 Newton engine are utilized for this purpose. There are many maneuver modes and control algorithms available to the spacecraft. In this paper only the analysis of the axial delta-V algorithm will be discussed. The analysis consists of two parts: an analytic study and a simulation study. The analytic results are based on rigid body dynamics, while the simulation includes the first order effect of the flexible magnetometer boom and nutation damper. The simulation utilizes a program developed at JPL which allows flexible body effects to be simulated by modeling a collection of rigid bodies attached together by hinges, springs and dampers. In this preliminary study of the Galileo only two rigid bodies were used in the simulation, but many more can and will be used in the final tests. In this analysis, the algorithm appears to be working correctly and the analytic and simulation results agree very well.

Longuski, J. M.↗

NASA NTRS1985

Determination of inverted-V stability from Dynamics Explorer satellite data

The longevity of a number of inverted-V electron precipitation events was measured by comparing electron distributions acquired from the two Dynamics Explorer spacecraft during close proximity passes through the southern auroral zone. Common events were identified in the two data sets for time separations up to 18 min. The maximum energy attained within an inverted-V sometimes varied between observations indicating growth or decay of the event. The number of events increasing in energy was roughly equal to those exhibiting decreasing energy, suggesting similar time scales for growth and decay. Observations closely spaced in time (minutes) had some events not in common, implying either a sudden cessation of the event or a limited spatial extent precluding observation by one of the two spacecraft due to its orbital displacement. A statistical study of 28 close proximity passes showed that the number of matched inverted-V events exceeded those which were unmatched. This was not true for comparisons of random pairs of electron distribution plots for the two spacecraft. This implies that the close proximity events observed by both spacecraft were not just random coincidences.

Thieman, J. R.↗

NASA NTRS1987

A V-grooved AlGaAs/GaAs passivated PN junction

A passivated, V-grooved GaAs solar cell offers important advantages in terms of improved optical coupling, higher short circuit current, and increased tolerance to particle radiation when compared to the planar cell configuration. An AlGaAs epilayer has been deposited on a p-type GaAs epilayer grown on an n-type V-grooved GaAs surface using MOCVD. A wet chemical etching process was used to produce a V-pattern with a 7.0 micron periodicity. Reflectivity measurements substantiate the expected decrease in solar reflectance. Scanning electron microscopy techniques were used to confirm the presence of the AlGaAs layer and verify the existence of a pn junction.

Bailey, Sheila G.↗

NASA NTRS1988

Temporal and spatial relationships between O V and Fe XXI emissions in solar flares

The temporal-spatial structure of simple solar flares observed with the Ultraviolet Spectrometer and Polarimeter of the Solar Maximum mission satellite has been studied in order to investigate the relationships between the impulsive O V and the gradual Fe XXI emissions. The point-like flares are characterized by the cotemporal evolution of the O V and Fe XXI emissions. The simple loop flares have a much larger spatial extent and show two distinctive phases: an initial impulsive phase with its emission localized in loop footpoints, and a gradual phase with its emission distributed in the loop. The temporal evolution of the Fe XXI and O V emissions in a flare is found to be closely related to its spatial structure.

Cheng, Chung-Chieh↗

NASA NTRS1987

A V-grooved AlGaAs/GaAs passivated pn junction

A passivated, V-grooved GaAs solar cell offers important advantages in terms of improved optical coupling, higher short-circuit current, and increased tolerance to particle radiation when compared to the planar cell configuration. An AlGaAs epilayer has been deposited on a p-type GaAs epilayer grown on an n-type V-grooved GaAs surface using MOCVD. A wet chemical etching process was used to produce a V-pattern with a 7.0-micron periodicity. Reflectivity measurements substantiate the expected decrease in solar reflectance. Scanning electron microscopy techniques were used to confirm the presence of the AlGaAs layer and verify the existence of a pn junction.

Bailey, S. G.↗

NASA NTRS1988

Discovery of very high velocity outflow in V Hydra - Wind from an accretion disk in a binary?

High-resolution observations of lines from the CO v = 1-0 vibration-rotation band at 4.6 microns, taken with the FTS/KPNO 4-m telescope, are reported for the carbon-rich red giant V Hydra, which is surrounded by an extended expanding molecular envelope resulting from extensive mass loss. The spectrum shows, in addition to the expected absorption at the outflow velocity of the envelope, absorption extending up to 120 km/s bluewards of the stellar velocity. A comparison of the spectrum observed at two epochs shows that the high-velocity absorption features change with time. It is suggested that the observed high-velocity features in V Hydra arise in a high-velocity polar outflow from an accretion disk in a binary system, as proposed in the mass-loss model for bipolar envelopes by Morris (1988).

Sahai, R.↗

NASA NTRS1988

PLANECHG: Earth orbit to lunar orbit delta V estimation program. User and technical documentation

The PLANECNG computer program calculates velocities for Earth-to-Mooon and Moon-to-Earth trajectories. The flight to be analyzed originates in a circular orbit of any inclination and altitude about one of the bodies, and culminates in a circular orbit of any inclination and altitude about the other body. An intermedate delta V and plane change occurs at the Lunar Sphere of Influence (SOI), the region where the vehicle is near its lowest velocity in the trajectory, and therefore where it is able to make the plane change with the lowest delta V. A given flight may penetrate the SOI at a number of points. Each point has associated with it a unique set of delta V's and total velocity. The program displays the velocities, in matrix form, for a representative set of SOI penetration points. An SOI point is identified by projecting Lunar latitude and longitude onto the SOI. The points recorded for a given flight are defined by the user, who provides a starting longitude and latitude, and an increment for each. A matrix is built with 10 longitudes forming the columns and 19 latitudes forming the rows. This matrix is presented in six reports, each containing different velocity or node information in the body of the matrix.

Source record↗

NASA NTRS1988

LLOFX earth orbit to lunar orbit delta V estimation program user and technical documentation

The LLOFX computer program calculates in-plane trajectories from an Earth-orbiting space station to Lunar orbit in such a way that the journey requires only two delta V burns (one to leave Earth circular orbit and one to circularize into Lunar orbit). The program requires the user to supply the Space Station altitude and Lunar orbit altitude (in km above the surface), and the desired time of flight for the transfer (in hours). It then determines and displays the trans-Lunar injection (TLI) delta V required to achieve the transfer, the Lunar orbit insertion (LOI) delta V required to circularize the orbit around the Moon, the actual time of flight, and whether the transfer orbit is elliptical or hyperbolic. Return information is also displayed. Finally, a plot of the transfer orbit is displayed.

Source record↗

NASA NTRS1988

A V-grooved GaAs solar cell

V-grooved GaAs solar cells promise the benefits of improved optical coupling, higher short-circuit current, and increased tolerance to particle radiation compared to planar cells. A GaAs homojunction cell was fabricated by etching a V-groove pattern into an n epilayer (2.1 x 10 to the 17th power per cu cm) grown by metalorganic chemical vapor deposition (MOCVD) on an n+ substrate (2.8 x 10 to the 18th power per cu cm) and then depositing and MOCVD p epilayer (4.2 x 10 to the 18th power per cu cm). Reflectivity measurements on cells with and without an antireflective coating confirm the expected decrease in reluctance of the microgrooved cell compared to the planar structure. The short circuit current of the V-grooved solar cell was 13 percent higher than that of the planar control.

Bailey, S. G.↗

NASA NTRS1989

The GaAs solar cells with V-grooved emitters

Geometrically structured surfaces have become increasingly important to solar cell efficiency improvements and radiation tolerance. Gallium arsenide solar cells with a V-grooved front surface which demonstrate improved optical coupling and higher short-circuit current compared to planar cells were fabricated. GaAs homojunction cells were fabricated by organometallic chemical vapor deposition (OMCVD) on an n+ substrate. The V-grooves were formed on the surface with an anisotropic etch, and an n-type buffer and p-type emitter were grown by OMCVD, followed by ohmic contacts. Reflectivity measurements show significantly lower reflectance for the microgrooved cell compared to the planar structure. The short circuit current of the V-grooved solar cell is consistently higher than that of the planar controls.

Bailey, Sheila G.↗