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306 records · Page 17
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Large-area epitaxial growth of InAs nanowires and thin films on hexagonal boron nitride by metal organic chemical vapor deposition

Large-area epitaxial growth of III–V nanowires and thin films on van der Waals substrates is key to developing flexible optoelectronic devices. In our study, large-area InAs nanowires and planar structures are grown on hexagonal boron nitride templates using metal organic chemical vapor deposition method without any catalyst or pre-treatments. The effect of basic growth parameters on nanowire yield and thin film morphology is investigated. Under optimised growth conditions, a high nanowire density of 2.1 x 10 9 cm -2 is achieved. A novel growth strategy to achieve uniform InAs thin film on h-BN/SiO 2 /Si substrate is introduced. The approach involves controlling the growth process to suppress the nucleation and growth of InAs nanowires, while promoting the radial growth of nano-islands formed on the h-BN surface. A uniform polycrystalline InAs thin film is thus obtained over a large area with a dominant zinc-blende phase. The film exhibits near-band-edge emission at room temperature and a relatively high Hall mobility of 399 cm -2 /(Vs). This work suggests a promising path for the direct growth of large-area, low-temperature III–V thin films on van der Waals substrates.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
NASA NTRS2021

Design of ZnSe QPM for Wide Transparency Sensing and Laser Applications

ZnSe has been a great choice for the rare-earth and transition metal doping to develop lasers. It is an excellent materialfor variety of optical applications due to wide transparency range, good fabricability and very low optical absorptionsimilar to other selenides. NASA Marshall Space Flight Center has developed large crystals using physical vapordeposition (PVD) doped with transition metals for lasing. GaAs based quasi-phase matched structures have a lot oflimitations including difficulty of frequency conversion from available high power lasers. We are developing Si- andGaAs- based templates and using microfabrication process to deposit ZnSe using physical vapor transport (PVT)method. Experimental results of the fabrication of templates and growth of ZnSe on templates will be presented.

Epitaxial↗
NASA NTRS1983

Drastic reduction of adsorption of CO and H2 on (111)-type Pd layers

Clean surfaces of (111)-type Pd layers, grown from the vapor phase on Mo(110) at room temperature, were used to study the adsorption of CO and H2 by temperature-programmed desorption, Auger electron spectroscopy, and low-energy electron diffraction. Mild annealing of the as-grown layers during a single desorption cycle (to about 600 K) drastically reduces the adsorption for both adsorbates. Low-dose argon-ion bombardment introduces surface imperfections which restore a high adsorption probability. The results are interpreted in terms of particular (111)-type surface structures that persist tp layer thicknesses of about four monolayers; the results raise questions with respect to the surface structure of supported thin epitaxial islands and particles of Pd and possibly also with respect to conventional methods of preparing bulk surfaces of Pd for adsorption studies.

Poppa, H.↗
NASA NTRS1993

Ordered organic thin films self-assembled from the vapor phase

Organic films self-assembled from a liquid phase, as in Langmuir-Blodgett or adsorption from solution, have received much attention in the past decade as techniques to achieve highly oriented-ordered polymeric thin films. Many organic compounds including some of the same fatty acids have been vapor deposited as well. However, organic pigments and dyes comprise a major class of important materials which have very low solubilities yet excellent thermal stabilities, making them ideally suited for film deposition from the vapor phase. Surprisingly, such molecular systems exhibit a significant propensity to self order, a high sensitivity to deposition parameters, and a range of microstructural forms that cannot be duplicated by the less energetic mechanisms associated with solution adsorption processes. Molecular solids such as heterocyclic polynuclear aromatics are excellent candidates for film formation by vacuum deposition means. Over the past decade, our work and that of others investigating a wide variety of perylene and phthalocyanine derivatives identified five deposition parameters that can significantly affect film morphology, physical microstructure, and type and extent of ordering developed in vacuum and vapor transport grown films. These parameters are substrate temperature, deposition rate, substrate chemistry and epitaxy, ambient gas convective flows, and post deposition annealing. Examples of how each of these conditions manifest themselves in the film structure and ordering, most frequently revealed by scanning electron microscopy, reflection absorption infrared spectroscopy (RAIR), and grazing incidence x-ray diffraction (GIX), are presented.

Debe, M. K.↗
DOE OSTI2020

cm 2 -Scale Synthesis of MoTe 2 Thin Films with Large Grains and Layer Control

Owing to the small energy differences between its polymorphs, MoTe 2 can access a full spectrum of electronic states from the 2H semiconducting state to the 1T' semimetallic state and from the T d Weyl semimetallic state to the superconducting state in the 1T' and T d phase at low temperature. Thus, it is a model system for phase transformation studies as well as quantum phenomena such as the quantum spin Hall effect and topological superconductivity. Careful studies of MoTe 2 and its potential applications require large-area MoTe 2 thin films with high crystallinity and thickness control. Here, we present cm 2 -scale synthesis of 2H-MoTe 2 thin films with layer control and large grains that span several microns. Layer control is achieved by controlling the initial thickness of the precursor MoO x thin films, which are deposited on sapphire substrates by atomic layer deposition and subsequently tellurized. Despite the van der Waals epitaxy, the precursor–substrate interface is found to critically determine the uniformity in thickness and grain size of the resulting MoTe 2 films: MoTe 2 grown on sapphire show uniform films while MoTe 2 grown on amorphous SiO 2 substrates form islands. Furthermore, this synthesis strategy decouples the layer control from the variabilities of growth conditions for robust growth results and is applicable to growing other transition-metal dichalcogenides with layer control.

2D materials↗
NASA NTRS1984

Material growth and characterization for solid state devices

During the reporting period, InGaAs was grown on Fe-doped (semi-insulating) (100) InP substrates by current controlled liquid phase epitaxy (CCLPE) at 640 C and current densities of 2.5A sq/cm to 5 A/sq cm for periods from 5 to 30 minutes. Special efforts were made to reduce the background carrier concentration in the grown layers as much as possible. The best layers exhibited carrier concentrations in the mid-10 to the 15th power/cu cm range and up to 10,900 sq cm/V-sec room temperature mobility. InGaAsP quaternary layers of energy gap corresponding to wavelengths of approximately 1.5 microns and 1.3 microns were grown on (100) InP substrates by CCLPE. In the device fabrication area, work was directed toward processing MISFET's using InGaAs. SiO2, Si3N4 and Al2O3 were deposited by ion beam sputtering, electron beam evaporation and chemical vapor reaction on Si, GaAs, and InGaAs substrates. SiO2 and Si3N4 sputtered layers were found to possess a high density of pinhole defects that precluded capacitance-voltage analysis. Chemical vapor deposited Al2O3 layers on Si, GaAs and InGaAs substrates also exhibited a large number of pinhole defects. This prevented achieving good MIS devices over most of the substrate surface area.

Stefanakos, E. K.↗
DOE OSTI2020

Hexagonal boron nitride: Epitaxial growth and device applications

As a newest family member of the III-nitrides, BN is considered amongst the remaining frontiers in wide energy bandgap semiconductors with potentials for technologically significant applications in deep UV (DUV) optoelectronics, solid-state neutron detectors, electron emitters, single photon emitters, switching/memory devices, and super-capacitors. It was shown that it is possible to produce h-BN epilayers with high hexagonal phase purity, UV transparency, and film stoichiometry by employing nitrogen-rich growth conditions. The quasi-2D nature of h-BN supports unusually strong optical transitions near the band edge and a large exciton binding energy on the order of 0.7 eV. Since the isotope of B-10 has a large capture cross-section for thermal neutrons, h-BN is an ideal material for the fabrication of solid-state neutron detectors for special nuclear materials detection, well and geothermal logging, and medical imaging applications. Freestanding B-10 enriched h-BN (h- 10 BN) epilayers with varying thicknesses up to 200 μm have been successfully synthesized by metal organic chemical vapor deposition (MOCVD) as of this writing. By utilizing the conductivity anisotropy nature of h-BN, 1 cm 2 lateral detectors fabricated from 100 μm thick h-10BN epilayers have demonstrated a detection efficiency of 59% for thermal neutrons, which is the highest on record among all solid-state neutron detectors as of today. It was noted that high growth temperatures, long growth times and the use of sapphire substrate tend to incorporate oxygen related impurities into h- 10 BN epilayers, which strongly impacted the carrier mobility-lifetime (μτ) products and charge collection efficiencies of h- 10 BN neutron detectors. As the h-BN material technology further develops, improved carrier mobilities and μτ products will allow the fabrication of h-BN devices with enhanced performance.

42 ENGINEERING↗
NASA NTRS1998

Crystal Growth of ZnSe and Related Ternary Compound Semiconductors by Vapor Transport

Interest in optical devices which can operate in the visible spectrum has motivated research interest in the II-VI wide band gap semiconductor materials. The recent challenge for semiconductor opto-electronics is the development of a laser which can operate at short visible wavelengths, In the past several years, major advances in thin film technology such as molecular beam epitaxy and metal organic chemical vapor deposition have demonstrated the applicability of II-VI materials to important devices such as light-emitting diodes, lasers, and ultraviolet detectors.The demonstration of its optical bistable properties in bulk and thin film forms also make ZnSe a possible candidate material for the building blocks of a digital optical computer. Despite this, developments in the crystal growth of bulk II-VI semiconductor materials has not advanced far enough to provide the low price, high quality substrates needed for the thin film growth technology. The electrical and optical properties of semiconductor materials depend on the native point defects, (the deviation from stoichiometry), and the impurity or dopant distribution. To date, the bulk growth of ZnSe substrates has been plagued with problems related to defects such as non-uniform distributions of native defects, impurities and dopants, lattice strain, dislocations, grain boundaries, and second phase inclusions which greatly effect the device performance. In the bulk crystal growth of some technologically important semiconductors, such as ZnTe, CdS, ZnSe and ZnS, vapor growth techniques have significant advantages over melt growth techniques due to the high melting points of these materials.

Su, Ching-Hua↗
DOE OSTI2021

Novel synthesis approach for “stubborn” metals and metal oxides

Significance Atomically precise complex oxides containing “stubborn” elements, such as ruthenium, iridium, and platinum, hold tremendous promise as designer quantum materials for exploring novel electronic, magnetic, superconducting, and topological phases owing to their strong spin–orbit interaction. This study shows a method to synthesize such materials by eliminating the major synthesis bottleneck of low vapor pressure and difficulty in oxidation. This study serves as a “proof-of-concept” allowing us to 1) grow Pt, RuO 2 , and SrRuO 3 thin films by supplying Pt and Ru precursors at 65 to 100 °C in a low-temperature effusion cell, as opposed to the several thousand degrees Celsius needed using electron beam evaporators; 2) reveal bulk-like room-temperature resistivity; and 3) ultimately provide pathways to creating atomically precise quantum structures.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Spectra-Orthogonal Optical Anisotropy in Wafer-Scale Molecular Crystal Monolayers

Controlling the spectral and polarization response of two-dimensional (2D) crystals is vital for developing ultrathin platforms for compact optoelectronic devices. However, independently tuning optical anisotropy and spectral response remains challenging in conventional semiconductors due to the intertwined nature of their lattice and electronic structures. Here, we report spectra-orthogonal optical anisotropy─where polarization anisotropy is tuned independently of spectral response─in wafer-scale, one-atom-thick 2D molecular crystal (2DMC) monolayers synthesized on monolayer transition-metal dichalcogenide (TMD) crystals. Utilizing the concomitant spectral consistency and structural tunability of perylene derivatives, we demonstrate tunable optical polarization anisotropy in 2DMCs with similar spectral profiles, as confirmed by room-temperature scanning tunneling microscopy and cross-polarized reflectance microscopy. Additional angle-dependent analysis of the single-crystal and polycrystalline molecular domains reveals an epitaxial relationship between the 2DMC and TMD. In conclusion, our results establish a scalable, molecule-based 2D crystalline platform for unique and tunable functionalities unattainable in covalent 2D solids.

2D materials↗
DOE OSTI2019

Anisotropic Vapor-Deposited Glasses: Hybrid Organic Solids

CONSPECTUS: The term "organic solids" encompasses both crystals and glasses. Organic crystals are commonly grown for purification and structure determination and are being extensively explored for applications in organic electronics including field effect transistors. The ability to control the packing of one molecule relative to its neighbors is of critical importance for most uses of organic crystals. Often, anisotropic packing is also highly desirable as it enhances charge transport and optimizes light absorption/emission. When compared to crystals, the local packing in organic glasses is highly disordered and often isotropic. Glasses, however, offer two key advantages with respect to crystals. First, glasses typically lack grain boundaries and thus exhibit better macroscopic homogeneity. Second, glass composition can often be varied over a wide range while maintaining homogeneity. Besides electronic materials, many modern plastics used in a wide range of technologies are organic glasses, and the glassy state is being increasingly utilized to deliver pharmaceuticals because of higher bioavailability. In this article, we introduce vapor-deposited organic glasses as hybrid materials that combine some of the useful features of crystals and traditional liquid-cooled glasses. Physical vapor deposition produces glasses by directly condensing molecules from the gas phase onto a temperature-controlled substrate and allows film thickness to be controlled with nanometer precision. Just as liquid-cooled glasses, vapor-deposited glasses have smooth surfaces and lack grain boundaries. These attributes are critical for applications such as organic light emitting diodes (OLEDs), in which vapor-deposited glasses of organic semiconductors form the active layers. In common with crystals, vapor-deposited glasses can exhibit anisotropic packing, and the extent of anisotropy can be comparable to that of the typical organic crystal. For vapor-deposited glasses, in contrast to crystals, anisotropic packing can generally be controlled as a continuous variable. Deposition conditions can be chosen to produce glasses with significant molecular orientation (molecules "standing up" or "lying down" relative to the substrate), and pr-stacking can be directed along different directions relative to the substrate. Over the last five years, we have gained a fundamental understanding of the mechanism that controls the anisotropy of vapor-deposited glasses and learned how to control many aspects of anisotropic packing. Two key elements that enable such control are the high mobility present at the surface of an organic glass and the tendency of the surface to promote anisotropic packing of molecules. In contrast to traditional epitaxial growth, for vapor-deposited glasses, the free surface (not the substrate) acts as a template that controls the structure of a growing film. Lastly, the structure of any given layer is decoupled from those beneath it, thereby providing considerable freedom in producing layered glassy structures.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS2002

Single Junction InGaP/GaAs Solar Cells Grown on Si Substrates using SiGe Buffer Layers

Single junction InGaP/GaAs solar cells displaying high efficiency and record high open circuit voltage values have been grown by metalorganic chemical vapor deposition on Ge/graded SiGe/Si substrates. Open circuit voltages as high as 980 mV under AM0 conditions have been verified to result from a single GaAs junction, with no evidence of Ge-related sub-cell photoresponse. Current AM0 efficiencies of close to 16% have been measured for a large number of small area cells, whose performance is limited by non-fundamental current losses due to significant surface reflection resulting from greater than 10% front surface metal coverage and wafer handling during the growth sequence for these prototype cells. It is shown that at the material quality currently achieved for GaAs grown on Ge/SiGe/Si substrates, namely a 10 nanosecond minority carrier lifetime that results from complete elimination of anti-phase domains and maintaining a threading dislocation density of approximately 8 x 10(exp 5) per square centimeter, 19-20% AM0 single junction GaAs cells are imminent. Experiments show that the high performance is not degraded for larger area cells, with identical open circuit voltages and higher short circuit current (due to reduced front metal coverage) values being demonstrated, indicating that large area scaling is possible in the near term. Comparison to a simple model indicates that the voltage output of these GaAs on Si cells follows ideal behavior expected for lattice mismatched devices, demonstrating that unaccounted for defects and issues that have plagued other methods to epitaxially integrate III-V cells with Si are resolved using SiGe buffers and proper GaAs nucleation methods. These early results already show the enormous and realistic potential of the virtual SiGe substrate approach for generating high efficiency, lightweight and strong III-V solar cells.

Ringel, S. A.↗
DOE OSTI2024

Silicon implantation and annealing in β -Ga 2 O 3 : Role of ambient, temperature, and time

Optimizing thermal anneals of Si-implanted β-Ga 2 O 3 is critical for low resistance contacts and selective area doping. Here we report the impact of annealing ambient, temperature, and time on the activation of room temperature ion-implanted Si in β-Ga 2 O 3 at concentrations from 5 × 10 18 to 1 × 10 20 cm −3 , demonstrating full activation (>80% activation, mobilities >70 cm 2 /V s) with contact resistances below 0.29 Ω mm. Homoepitaxial β-Ga 2 O 3 films, grown by plasma-assisted molecular beam epitaxy on Fe-doped (010) substrates, were implanted at multiple energies to yield 100 nm box profiles of 5 × 10 18 , 5 × 10 19, and 1 × 10 20 cm −3 . Anneals were performed in an ultra-high vacuum-compatible quartz furnace at 1 bar with well-controlled gas compositions. To maintain β-Ga 2 O 3 stability, p O2 must be greater than 10 −9 bar. Anneals up to p O2 = 1 bar achieve full activation at 5 × 10 18 cm −3, while 5 × 10 19 cm −3 must be annealed with p O2 ≤ 10 −4 bar, and 1 × 10 20 cm −3 requires p O2 < 10 −6 bar. Water vapor prevents activation and must be maintained below 10 −8 bar. Activation is achieved for anneal temperatures as low as 850 °C with mobility increasing with anneal temperatures up to 1050 °C, though Si diffusion has been reported above 950 °C. At 950 °C, activation is maximized between 5 and 20 min with longer times resulting in decreased carrier activation (over-annealing). This over-annealing is significant for concentrations above 5 × 10 19 cm −3 and occurs rapidly at 1 × 10 20 cm −3 . Rutherford backscattering spectrometry (channeling) suggests that damage recovery is seeded from remnant aligned β-Ga 2 O 3 that remains after implantation; this conclusion is also supported by scanning transmission electron microscopy showing retention of the β-phase with inclusions that resemble the γ-phase.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
NASA NTRS2014

Structural Characterization of Lateral-grown 6H-SiC am-plane Seed Crystals by Hot Wall CVD Epitaxy

The performance of commercially available silicon carbide (SiC) power devices is limited due to inherently high density of screw dislocations (SD), which are necessary for maintaining polytype during boule growth and commercially viable growth rates. The NASA Glenn Research Center (GRC) has recently proposed a new bulk growth process based on axial fiber growth (parallel to the c-axis) followed by lateral expansion (perpendicular to the c-axis) for producing multi-faceted m-plane SiC boules that can potentially produce wafers with as few as one SD per wafer. In order to implement this novel growth technique, the lateral homoepitaxial growth expansion of a SiC fiber without introducing a significant number of additional defects is critical. Lateral expansion is being investigated by hot wall chemical vapor deposition (HWCVD) growth of 6H-SiC am-plane seed crystals (0.8mm x 0.5mm x 15mm) designed to replicate axially grown SiC single crystal fibers. The post-growth crystals exhibit hexagonal morphology with approximately 1500 m (1.5 mm) of total lateral expansion. Preliminary analysis by synchrotron white beam x-ray topography (SWBXT) confirms that the growth was homoepitaxial, matching the polytype of the respective underlying region of the seed crystal. Axial and transverse sections from the as grown crystal samples were characterized in detail by a combination of SWBXT, transmission electron microscopy (TEM) and Raman spectroscopy to map defect types and distribution. X-ray diffraction analysis indicates the seed crystal contained stacking disorders and this appears to have been reproduced in the lateral growth sections. Analysis of the relative intensity for folded transverse acoustic (FTA) and optical (FTO) modes on the Raman spectra indicate the existence of stacking faults. Further, the density of stacking faults is higher in the seed than in the grown crystal. Bundles of dislocations are observed propagating from the seed in m-axis lateral directions. Contrast extinction analysis of these dislocation lines reveals they are edge type basal plane dislocations that track the growth direction. Polytype phase transition and stacking faults were observed by high-resolution TEM (HRTEM), in agreement with SWBXT and Raman scattering.

Single Crystal↗
DOE OSTI2021

Study of the crystal structure of SnS thin films by atomic layer deposition

Tin monosulfide, SnS, absorbs visible light and holds promise for thin-film photovoltaics. However, the optoelectronic properties of this material vary among the different structural phases, and control over the phase of vapor deposited SnS thin films is not well understood. In order to study the phases and crystallographic orientations of SnS films, films with thicknesses of 90 nm–750nm were prepared by atomic layer deposition (ALD) at temperatures between 80 °C and 200 °C on amorphous silicon dioxide (a-SiO2) and single-crystal sodium chloride (NaCl). We show that the crystal structures and orientations of the ALD-SnS thin films vary with deposition temperature, film thickness, and substrate. We confirm the presence of metastable cubic π-SnS in co-existence with the thermodynamically stable orthorhombic α-SnS and find that the π phase is more prevalent at lower deposition temperatures. The films grown on a-SiO2 are textured, the degree of texturing increases with lower temperature or higher thickness, and the deposited phase is also thickness dependent. Upon annealing, which is known to promote SnS grain growth, all films revert to orthorhombic α-SnS. The films grown on the NaCl(100) substrate exhibit a much higher degree of texturing and show different preferred orientations dependent on the phase: π-(400) and α-(111) or α-(040). In addition, we demonstrate a proof-of-concept device made from the highly oriented SnS grown on NaCl.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Molecular dynamics studies of defect formation during heteroepitaxial growth of InGaN alloys on (0001) GaN surfaces

Here, we investigate the formation of extended defects during molecular-dynamics (MD) simulations of GaN and InGaN growth on (0001) and (11$\bar{2}$0) wurtzite-GaN surfaces. The simulated growths are conducted on an atypically large scale by sequentially injecting nearly a million individual vapor-phase atoms towards a fixed GaN surface; we apply time-and-position-dependent boundary constraints that vary the ensemble treatments of the vapor-phase, the near-surface solid-phase, and the bulk-like regions of the growing layer. The simulations employ newly optimized Stillinger-Weber In-Ga-N-system potentials, wherein multiple binary and ternary structures are included in the underlying density-functional-theory training sets, allowing improved treatment of In-Ga-related atomic interactions. To examine the effect of growth conditions, we study a matrix of >30 different MD-growth simulations for a range of InxGa1-xN-alloy compositions (0 ≤ x ≤ 0.4) and homologous growth temperatures [0.50 ≤ T/T* m (x) ≤ 0.90], where T* m (x) is the simulated melting point. Growths conducted on polar (0001) GaN substrates exhibit the formation of various extended defects including stacking faults/polymorphism, associated domain boundaries, surface roughness, dislocations, and voids. In contrast, selected growths conducted on semi-polar (11$\bar{2}$0) GaN, where the wurtzite-phase stacking sequence is revealed at the surface, exhibit the formation of far fewer stacking faults. We discuss variations in the defect formation with the MD growth conditions, and we compare the resulting simulated films to existing experimental observations in InGaN/GaN. Finally, while the palette of defects observed by MD closely resembles those observed in the past experiments, further work is needed to achieve truly predictive large-scale simulations of InGaN/GaN crystal growth using MD methodologies.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2018

High Efficiency, Inexpensive Thin Film III-V Photovoltaics using Single-Crystalline-Like, Flexible Substrates

An innovative, non-mainstream approach has been developed to fabricate inexpensive GaAs solar cells directly on epi-ready flexible metal substrates. Using templates made by ion beam assisted deposition (IBAD) and epitaxial germanium films made by Plasma Enhanced Chemical Vapor Deposition (PECVD), epitaxial GaAs films with high opto-electronic and structural quality have been grown on metal substrates using metal organic chemical vapor deposition (MOCVD). Crystallographic out-of-plane and in-plane texture spread less than 1 degree full-width-at-half-maximum (FWHM) was achieved in undoped, n-type and p-type GaAs films as well as in AlGaAs films on metal substrates. Electron mobility of >1300 cm 2 /V-s was attained in GaAs:Si n-type films. Also, hole mobility of >100 cm 2 /V-s was measured in GaAs:Zn films. Consistent doping was obtained in GaAs:Si (10 15 -10 18 cm -3 ), and GaAs:Zn films (10 17 -10 19 cm -3 ), necessary for the active device layers of a GaAs solar cell. Defect reduction techniques (thermal cycling, superlattice structures) were implemented to reduce defect density in GaAs films from 1 × 10 9 cm -2 to 9 × 10 7 cm -2 . Lifetime of 2.3 ns was obtained in AlGaAs/GaAs double-heterostructure device. Solar cells were fabricated based on designs using 1-dimensional and 2-dimensional simulations tailored to the specific properties of the GaAs films on metal substrates. All device fabrication processes (lithography, anti-reflection coating (ARC), device isolation and mesa formation and ohmic metal electrode formation) suitable for III-V solar cell fabrication on metal substrates were fully developed. A bi-layered ARC using ZnS and MgF 2 was used to minimize the reflection over wide range of spectrum. When this ARC was applied after removal of the parasitic absorption layer, the conversion efficiencies were improved up to 11.1% with V oc = ~0.621 V, J sc = ~24.5 mA/cm 2 , and FF = ~0.735. Yet another accomplishment in this project was the development of all electrically-conducting architecture for GaAs solar cells on metal substrates. Biaxial-texture was successfully achieved in all electrically-conducting buffer layer on metal substrate in structure based on IBAD TiN instead of IBAD MgO. The all electrically-conducting Ge/NiSi 2 /TiN/IBAD-TiN/Hastelloy substrate was used to fabricate back contacts for vertically conducting solar cell structures on metal substrates. A metallic resistivity as low as 4.17 μΩ•cm was obtained. A significant improvement of the texture of the Ge template was achieved using a Ag buffer layer between the TiN films. Epitaxial GaAs was successfully grown on the all-electrically-conducting buffer architecture. A Liquid Phase Epitaxy (LPE) method to drastically increase grain size of epitaxial Ge while maintaining the single-crystalline-like texture. Grain size up to 35 µm was achieved in LPE Ge grown on sputtered Ge with a grain size of ~ 1 µm on IBAD template on metal substrate. Epitaxial GaAs was grown on LPE Ge, with an out-of-plane texture of 0.34° compared to 0.98° in GaAs grown on sputter deposited Ge. A model was developed to simulate the effect of grain boundaries as a function of grain size of GaAs films on metal substrates. This model showed that even the very low angle grain boundaries (<1º misorientation) of our GaAs films led to decrease in Voc. Hydrogen plasma passivation treatment is being developed to improve open circuit voltage and the conversion efficiency of GaAs solar cells on flexible substrate.

14 SOLAR ENERGY↗
NASA NTRSDate not supplied

Metallic Powder Core Tubular Wire (PCTW) Development for Additive Manufacturing

NASA Langley Research Center (LaRC) in Hampton, VA, and the Center for Welding, Joining, and Coating Research (CWJCR) in the Department of Metallurgical and Materials Engineering at the Colorado School of Mines (CSM) in Golden, CO, have collaborated for nearly fifteen years to develop metallic powder core tubular wire (PCTW) feedstock for additive manufacturing (AM) using electron beam deposition. The motivation for this development was to offset dealloying observed during deposition of titanium and aluminum alloy solid wire feedstock in the LaRC electron beam freeform fabrication (EBF3) system and to explore novel alloy compositions by tailoring the powder fill. EBF3 is a fusion-based AM process that is performed under vacuum and is consequently prone to vaporization loss of low vapor pressure alloying elements. Research spanning four graduate student research projects succeeded in developing the basic methodology to fabricate PCTW, the mass balance equations used to define the powder fill, microstructure control through particulate inoculation, and the feasibility of producing metal matrix composite materials. Metallic PCTW is comprised of a thin foil sheath wrapped around a powder blend. Fabrication of PCTW at CSM was accomplished using a tubular wire mill system to first bend a flat strip into a u-shaped cross section, deposit a powder fill, create a lap joint to seal the wire, and draw to final diameter. Powder management systems were developed to ensure uniform mixing of powder constituents and identify feed rates for optimum fill ratios. Processing parameters were successfully developed for titanium and aluminum alloy sheaths to account for material work hardening during drawing. Mass balance equations were developed to account for compositional contributions of the sheath and powder fill. PCTW composition can be adjusted through selection of the sheath or powder materials. PCTWs were successfully developed to offset Al loss in deposits of Ti-6-4 and Mg loss in Al 6061, resulting in deposits that were within the composition limits for each material. Ti-6-4 deposits were fabricated using PCTW comprised of commercially pure (CP) titanium sheath and a fill of pre-alloyed Ti-6-4 powder with additions of elemental Al and V powders. Additions of both elements were required to account for the CP Ti from the sheath, and Al was further enhanced to offset documented losses in EBF3 deposits. For Al 6061 deposits, composition was modulated through the choice of sheath material. The PCTW was made using an Al 5052 sheath to supplement Mg content and a fill composition of pre-alloyed 6061 powder with additions of Si and Cu.The slower solidification rate of the EBF3 process compared with laser powder bed fusion processes can lead to coarse-grained microstructures and mechanical property anisotropy. EBF3deposits of Ti-6-4 exhibited large epitaxially grown β grains, which result in degraded mechanical properties in the deposition direction. Microstructure refinement was achieved through a combination of electron beam modulation and the use of a PCTW designed for Ti-6-4 deposits and modified by the addition of powder made from Fe and B. Resulting deposits exhibited reductions in β grain size, α phase colony intercept length and lath width, and an increased volume fraction of β phase. The mechanism of microstructure refinement was related to precipitation of boride particles. Hardness testing confirmed that mechanical property anisotropy was reduced and an overall increase in hardness was achieved.Metal matrix composite (MMC) materials offer strength and stiffness benefits over unreinforced materials. Two methods were investigated using PCTW technology for producing Al 6061 basedMMC materials; the direct addition of SiC reinforcing particles and the in-situ generation of reinforcements through reaction synthesis of precursor powders. Al 6061 based MMCs reinforced with SiC exhibited particle clustering and formation of aluminum carbides during deposition. The application of a Ni coating to the SiC particles prior to incorporation into the powder fill eliminated aluminum carbide formation and aided particle distribution during deposition. Modulation of beam focus and power further reduced aluminum carbide formation and aided particle distribution. In reaction synthesis, precursor additions undergo an exothermic reaction during deposition to form new ceramic products, generally of finer scale than the initial precursor components. The product phases provide reinforcement in the MMC and act as nucleation sites during solidification, resulting in grain refinement, improved mechanical properties, and reduced susceptibility to solidification cracking. Higher tensile strength and stiffness were demonstrated in Al 6061 based MMCs with 2 vol% reinforcement. These combined research efforts demonstrate the potential of PCTW technology for customizing of alloy composition and achieving microstructure control. A manufacturing process for titanium- and aluminum-based PCTWs was developed based on iterative design, theoretical calculations, and empirical data. PCTW technology successfully mitigated Al loss from Ti-6-4 and Mg loss in Al 6061, resulted in grain refinement in Ti-6-4, and demonstrated fabrication of Al based MMCs

Marcia S Domack↗