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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 307 records · Page 17
All sourcesNASA NTRSDOE OSTI
NASA NTRS2002

Crystal Growth of ZnSe and Related Ternary Compound Semiconductors by Vapor Transport

The objective of the project is to determine the relative contributions of gravity-driven fluid flows to the compositional distribution, incorporation of impurities and defects, and deviation from stoichiometry observed in the crystals grown by vapor transport as results of buoyance-driven convection and growth interface fluctuations caused by irregular fluid-flows. ZnSe and related ternary compounds, such as ZnSeS and ZnSeTe, were grown by vapor transport technique with real time in-situ non-invasive monitoring techniques. The grown crystals were characterized extensively to correlate the grown crystal properties with the growth conditions. The following are the research progress in the past two years. In-situ monitoring of partial pressure by optical absorption technique and visual observation of the growing crystal were performed during vapor growth of ZnSe. Low-temperature photoluminescence (PL) spectra and glow discharge mass spectroscopy (GDMS) were measured on ZnSe starting materials provided by various vendors and on bulk crystals grown from these starting materials by physical vapor transport (PVT) to study the effects of purification and contamination during crystal growth process. Optical characterization was performed on wafers sliced from the grown crystals of ZnSe, ZnTe and ZnSe(1-x),Te(x), (0<x<0.4). Energy band gaps at room temperature were determined from optical transmission measurements and a best fit curve to the band gap vs. composition, x, data gives a bowing parameter of 1.45. Low-temperature photoluminescence (PL) spectra of ZnSe and ZnTe were dominated by near band edge emissions and no deep donor-acceptor pairs were observed. The PL spectrum exhibited a broad emission for the ZnSe(1-x),Te(x), samples, 0.09<x<0.39. The single broad PL emission spectra and the spectra measured as a function of temperature were interpreted as being associated with the exciton bound to Te clusters because of the high Te content in these samples. To validate numerical codes, in-situ monitoring during the PVT of HgI2 was designed. Optical absorption spectra of the vapor phase over HgI2 were measured for wavelengths between 200 and 600nm at sample temperatures between 349 and 610K. The Beer's Law constants for 15 wavelengths between 200 and 440 nm were determined. From these constants the vapor pressure of HgI2 was established as a function of temperature for the liquid and the solid Beta-phases To characterize the growth conditions during the PVT growth of In-doped ZnSe the optical absorbance of the vapor phase over the In-Se system were measured and were used to obtain the partial pressures of Se2(g) and In2Se(g).

Su, Ching-Hua↗
NASA NTRS1997

Growth of Bulk Wide Bandgap Semiconductor Crystals and Their Potential Applications

Developments in bulk crystal growth research for electro-optical devices in the Center for Photonic Materials and Devices since its establishment have been reviewed. Purification processes and single crystal growth systems employing physical vapor transport and Bridgman methods were assembled and used to produce high purity and superior quality wide bandgap materials such as heavy metal halides and II-VI compound semiconductors. Comprehensive material characterization techniques have been employed to reveal the optical, electrical and thermodynamic properties of crystals, and the results were used to establish improved material processing procedures. Postgrowth treatments such as passivation, oxidation, chemical etching and metal contacting during the X-ray and gamma-ray device fabrication process have also been investigated and low noise threshold with improved energy resolution has been achieved.

Chen, Kuo-Tong↗
NASA NTRS1995

High data density temperature measurement for quasi steady-state flows

A new optical instrument, the liquid crystal point diffraction interferometer (LCPDI), is used to measure the temperature distribution across a heated chamber filled with silicone oil. Data taken using the LCPDI are compared to equivalent measurements made with a traversing thermocouple and the two data sets show excellent agreement This instrument maintains the compact, robust design of Linnik's point diffraction interferometer and adds to it phase stepping capability for quantitative interferogram analysis. The result is a compact, simple to align, environmentally insensitive interferometer capable of accurately measuring optical wavefronts with very high data density and with automated data reduction.

Mercer, Carolyn R.↗
NASA NTRS1996

High Data Density Temperature Measurement for Quasi Steady-State Flows

A new optical instrument, the liquid crystal point diffraction interferometer (LCPDI), is used to measure the temperature distribution across a heated chamber filled with silicone oil. Data taken using the LCPDI are compared to equivalent measurements made with a traversing thermo-couple and the two data sets show excellent agreement. This instrument maintains the compact, robust design of Linniks point diffraction interferometer and adds to it phase stepping capability for quantitative interferogram analysis. The result is a compact, simple to align, environmentally insensitive interferometer capable of accurately measuring optical wave-fronts with very high data density and with automated data reduction.

Mercer, C. R.↗
NASA NTRS1985

Growth of Solid Solution Crystals

The major objective of this program is to determine the conditions under which single crystals of solid solutions can be grown from the melt in a Bridgman configuration with a high degree of chemical homogeneity. The central aim is to assess the role of gravity in the growth process and to explore the possible advantages for growth in the absence of gravity. The alloy system being investigated is the solid solution semiconductor with x-values appropriate for infrared detector applications in Hg sub (1-x) Cd sub x Te the 8 to 14 micro m wavelength region. Both melt and Te-solvent growth are being considered. The study consists of an extensive ground-based experimental and theoretical research effort followed by flight experimentation where appropriate. Experimental facilities have been established for the purification, casting, and crystal growth of the alloy system. Facilities have been also established for the metallurgical, compositional, electric and optical characterization of the alloys. Crystals are being grown by the Bridgman-Stockbarger method and are analyzed by various experimental techniques to evaluate the effects of growth conditions on the longitudinal and radial compositional variations and defect densities in the crystals.

Lehoczky, S. L.↗
NASA NTRS2005

Impact of Cirrus Crystal Shape on Solar Spectral Irradiance: A Case Study for Subtropical Cirrus

Profiles of in situ measurements of ice crystal size distribution of subtropical cirrus were used to calculate solar spectral irradiances above and below the clouds. Spheres and nonspherical ice crystal habits (columns, hollows, plates, bullets, and aggregates) were assumed in the calculations. The simulation results were compared to irradiance measurements from the NASA Solar Spectral Flux Radiometer. The microphysical and radiation data were collected by three aircraft during CRYSTAL-FACE. Two cirrus cases (optical thickness of about 1 and 7) from two mission dates (26 and 23 July 2002) were investigated in detail. The measured downwelling and upwelling irradiance spectra above the cirrus could mostly be reproduced by the radiation model to within +/- 5-10% for most ice crystal habits. Below the cirrus the simulations disagreed with the measured irradiances due to surface albedo variability along the flight track, and nonoptimal colocation between the microphysical and irradiance measurements. The impact of shape characteristics of the crystals was important for the reflected irradiances above the optically thin cirrus, especially for small solar zenith angles, because in this case single-scattering dominated the solar radiation field. For the cirrus of moderate optical thickness the enhanced multiple scattering tended to diminish particular shape features caused by nonspherical single-scattering. Within the ice absorption bands the shape-related differences in the absorption characteristics of the individual nonspherical ice crystals were amplified if multiple scattering prevailed. Furthermore, it was found that below the cloud the shape sensitivity of the downwelling irradiance spectra is larger compared to the nonsphericity effects on reflected irradiances above the cirrus. Finally, it was shown that the calculated cirrus solar radiative forcing could vary by as much as 26% depending on the ice crystal habit.

Wendisch, Manfred↗
NASA NTRS1998

Crystal Growth of ZnSe and Related Ternary Compound Semiconductors by Vapor Transport

Interest in optical devices which can operate in the visible spectrum has motivated research interest in the II-VI wide band gap semiconductor materials. The recent challenge for semiconductor opto-electronics is the development of a laser which can operate at short visible wavelengths, In the past several years, major advances in thin film technology such as molecular beam epitaxy and metal organic chemical vapor deposition have demonstrated the applicability of II-VI materials to important devices such as light-emitting diodes, lasers, and ultraviolet detectors.The demonstration of its optical bistable properties in bulk and thin film forms also make ZnSe a possible candidate material for the building blocks of a digital optical computer. Despite this, developments in the crystal growth of bulk II-VI semiconductor materials has not advanced far enough to provide the low price, high quality substrates needed for the thin film growth technology. The electrical and optical properties of semiconductor materials depend on the native point defects, (the deviation from stoichiometry), and the impurity or dopant distribution. To date, the bulk growth of ZnSe substrates has been plagued with problems related to defects such as non-uniform distributions of native defects, impurities and dopants, lattice strain, dislocations, grain boundaries, and second phase inclusions which greatly effect the device performance. In the bulk crystal growth of some technologically important semiconductors, such as ZnTe, CdS, ZnSe and ZnS, vapor growth techniques have significant advantages over melt growth techniques due to the high melting points of these materials.

Su, Ching-Hua↗
NASA NTRS2005

Thermophysical and Optical Properties of Semiconducting Ga2Te3 Melt

The majority of bulk semiconductor single crystals are presently grown from their melts. The thermophysical and optical properties of the melts provide a fundamental understanding of the melt structure and can be used to optimize the growth conditions to obtain higher quality crystals. In this paper, we report several thermophysical and optical properties for Ga2Te3 melts, such as electrical conductivity, viscosity, and optical transmission for temperatures ranging from the melting point up to approximately 990 C. The conductivity and viscosity of the melts are determined using the transient torque technique. The optical transmission of the melts is measured between the wavelengths of 300 and 2000 nm by an dual beam reversed-optics spectrophotometer. The measured properties are in good agreement with the published data. The conductivities indicate that the Ga2Te3 melt is semiconductor-like. The anomalous behavior in the measured properties are used as an indication of a structural transformation in the Ga2Te3 melt and discussed in terms of Eyring's and Bachinskii's predicted behaviors for homogeneous melts.

Li, Chao↗
NASA NTRS1984

Programmable masks for optical information processing

Research in progress at NASA Ames Research Center on programmable masks is discussed in this paper. One type is a large area format liquid crystal mask intended for binary optical computation problems. To date, an on-off contrast ratio of 500:1 has been achieved at a switching rate of 1 Hz. With a 32 x 32 format, a ratio 10 to the 4th power:1 is desirable. The switching contrast is entirely dependent on the polarized quality; therefore, it is believed that 10 to the 4th power:1 in transmission is possible. Larger format masks are under development. An application to Hadamard transform polarized imagery at wavelengths of 1.0 to 2.0 micrometers, which is competitive with the best monolithic infrared detector arrays, is discussed.

Goebel, J. H.↗
NASA NTRS1977

Conceptual design of an on-board optical processor with components

The specification of components for a spacecraft on-board optical processor was investigated. A space oriented application of optical data processing and the investigation of certain aspects of optical correlators were examined. The investigation confirmed that real-time optical processing has made significant advances over the past few years, but that there are still critical components which will require further development for use in an on-board optical processor. The devices evaluated were the coherent light valve, the readout optical modulator, the liquid crystal modulator, and the image forming light modulator.

Walsh, J. R.↗
NASA NTRS1977

Electrical, magnetic, and optical properties of the tetrathiafulvalene /TTF/ pseudohalides, /TTF/12/SCN/7 and /TTF/12/SeCN/7

The electrical, magnetic, and optical properties of charge-transfer salts containing tetrathiafulvalene (TTF) and the pseudohalides, thiocyanate (SCN) and selenocyanate (SeCN), have been investigated. These salts are quasi-one-dimensional compounds containing cation radicals only, in contrast to a cation-radical-anion-radical system, such as tetrathiafulvalene tetracyanoquinodimethane (TTF) (TCNQ). Measurements of electrical conductivity, thermoelectric power, and optical reflectivity of single crystals of the nonstoichiometric salts (TTF)12(SCN)7 and (TTF)12(SeCN)7 show metal-like characteristics above 200 K (high-temperature region). The conductivities at room temperature are approximately 750 mho/cm comparable to those found in (TTF) (TCNQ), and increase with decreasing temperature down to approximately 200 K. The thermoelectric power at room temperature is small and positive (approximately 9 microvolts/deg K), and decreases linearly with decreasing temperature in this region (as expected for metal-like hole conduction along the TTF chains). The ESR intensity, however, decreases with decreasing temperature above 200 K. At 170 K a metal-nonmetal transition occurs, and the transport and magnetic properties below this temperature are characteristic of a semiconducting state.

Somoano, R. B.↗
NASA NTRS1980

Neodymium YAG lasers. Citations from the International Aerospace Abstracts data base

Various aspects of neodymium yag lasers are discussed in approximately 267 citations. Laser materials and outputs, laser mode locking; crystal, fiber, and nonlinear optics, optical pumping communications, energy conversion efficiency, and laser applications are covered. Pulsed, continuous wave, solid state, Q switched, infrared, and dye lasers are included.

Mauk, S. C.↗
NASA NTRS1983

Reduced thermal focusing and birefringence in zig-zag slab geometry crystalline lasers

The present investigation is concerned with interferometric measurements of the thermally induced optical effects in laser crystals, taking into account crystals cut in both the zig-zag slab and the conventional rod geometries. The measurements conducted demonstrate the significant advantages obtained by replacing the rod in a Nd:YAG laser with a slab. A description is provided of simple measures designed to eliminate end and edge effects, and efficiency and threshold data for the Nd:YAG slab and the rod it replaced are presented. The only disadvantage is a small increase in cost due to the more difficult fabrication of the slab and the greater amount of Nd:YAG which is needed to allow the ends to be unpumped.

Kane, T. J.↗
NASA NTRS1985

Vision requirements for Space Station applications

Problems which will be encountered by computer vision systems in Space Station operations are discussed, along with solutions be examined at Johnson Space Station. Lighting cannot be controlled in space, nor can the random presence of reflective surfaces. Task-oriented capabilities are to include docking to moving objects, identification of unexpected objects during autonomous flights to different orbits, and diagnoses of damage and repair requirements for autonomous Space Station inspection robots. The approaches being examined to provide these and other capabilities are television IR sensors, advanced pattern recognition programs feeding on data from laser probes, laser radar for robot eyesight and arrays of SMART sensors for automated location and tracking of target objects. Attention is also being given to liquid crystal light valves for optical processing of images for comparisons with on-board electronic libraries of images.

Crouse, K. R.↗