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At least 307 records · Page 17

Assessment of probability of detection of delaminations in fiber-reinforced composites

Delamination is one of the critical defects in composite materials and structures. An ultrasonic C-scan imaging technique which maps out the acoustic impedance mismatched areas with respect to the sample coordinates, is particularly well suited for detecting and characterizing delaminations in composites. To properly interpret the results, it is necessary to correlate the indications with the detection limits and probability of detection (POD) of the ultrasonic C-scan imaging technique. The baseline information on the assessment of POD of delaminations in composite materials and structures is very beneficial to the evaluation of spacecraft materials. In this study, we review the principle of POD, describe the laboratory set-up and procedure, and present the experimental results as well as assessment of POD of delaminations in fiber reinforced composite panels using ultrasonic C-scan techniques.

Chern, E. J.↗

Autogeneous Friction Stir Weld Lack-of-Penetration Defect Detection and Sizing Using Directional Conductivity Measurements with MWM Eddy Current Sensor

Al 2195-T8 plate specimens containing Friction Stir Welds (FSW), provided by Lockheed Martin, were inspected using directional conductivity measurements with the MWM sensor. Sensitivity to lack-of-penetration (LOP) defect size has been demonstrated. The feature used to determine defect size was the normalized longitudinal component of the MWM conductivity measurements. This directional conductivity component was insensitive to the presence of a discrete crack. This permitted correlation of MWM conductivity measurements with the LOP defect size as changes in conductivity were apparently associated with metallurgical features within the first 0.020 in. of the LOP defect zone. Transverse directional conductivity measurements also provided an indication of the presence of discrete cracks. Continued efforts are focussed on inspection of a larger set of welded panels and further refinement of LOP characterization tools.

Goldfine, Neil↗

Characterization of Asymmetry in Magnetoacoustic Emission Burst by Numerical Processes

It has been well known that the pattern of the magnetoacoustic emission (MAE) burst observed during the sweep over one half-cycle of the hysteresis loop becomes asymmetric depending on the strength of the magnetic domain wall-defect interaction and the state of residual stresses in a ferromagnet. The ascending asymmetry due to the former has been observed at a very low frequency (.7 Hz) of applied AC magnetic field at a given amplitude. The descending asymmetry due to uniaxial compressive stress has been typically observed at the AC applied magnetic field frequency of 20 Hz. The physical interpretation of both types of asymmetry has been well established. It is, however, necessary to perform investigations of the dependence of asymmetry on externally controlled parameters such as the amplitude and frequency of the AC applied magnetic fields. The purpose of the present study is therefore to devise a mathematical means that describes the degree of asymmetry of the MAE burst and apply this scheme to investigate the AC magnetic field amplitude dependence of the asymmetry.

Namkung, M.↗

Ballistic-Electron-Emission Microscopy Techniques for Nanometer-scale Characterization of Interfaces

Semiconductor interface properties are among the most important phenomena in materials science and technology. The study of metal/semiconductor Schottky barrier interfaces has been the primary focus of a large research and development community for decades. Throughout the long history of interface investigation, the study of interface defect electronic properties have been seriously hindered by the fundamental experimental difficulty of probing subsurface structures. A new method, Ballistic-Electron-Emission Microscopy (BEEM), has been developed which not only enables spectroscopic probing of subsurface interface properties, but also, provides nanometer-resolution imaging capabilities. BEEM employs Scanning Tunneling Microscopy (STM) and a unique spatially localized ballistic electron spectroscopy method...

Bell, L. D.↗

Growth of Solid Solution Crystals

The major objective of this program is to determine the conditions under which single crystals of solid solutions can be grown from the melt in a Bridgman configuration with a high degree of chemical homogeneity. The central aim is to assess the role of gravity in the growth process and to explore the possible advantages for growth in the absence of gravity. The alloy system being investigated is the solid solution semiconductor with x-values appropriate for infrared detector applications in Hg sub (1-x) Cd sub x Te the 8 to 14 micro m wavelength region. Both melt and Te-solvent growth are being considered. The study consists of an extensive ground-based experimental and theoretical research effort followed by flight experimentation where appropriate. Experimental facilities have been established for the purification, casting, and crystal growth of the alloy system. Facilities have been also established for the metallurgical, compositional, electric and optical characterization of the alloys. Crystals are being grown by the Bridgman-Stockbarger method and are analyzed by various experimental techniques to evaluate the effects of growth conditions on the longitudinal and radial compositional variations and defect densities in the crystals.

Lehoczky, S. L.↗

Effects of processing induced defects on laminate response - Interlaminar tensile strength

Four different layup methods were used in the present study of the interlaminar tensile strength of AS4/3501-6 graphite-reinforced epoxy as a function of defects from manufacturing-induced porosity. The methods were: (1) baseline hand layup, (2) solvent wipe of prepreg for resin removal, (3) moisture-introduction between plies, and (4) a low-pressure cure cycle. Pore characterization was conducted according to ASTM D-2734. A significant reduction is noted in the out-of-plane tensile strength as a function of increasing void content; the porosity data were used in an empirical model to predict out-of-plane strength as a function of porosity.

Gurdal, Zafer↗

Exep: Environmental Testing of High-Actuator-Count Mems Deformable Mirrors for Space-Based Applications

Coronagraph instruments on future space telescopes will rely on deformable mirrors to create high contrast images for the direct detection of exoplanets. As part of the NASA Exoplanet Explorations Program’s coronagraph technology development efforts, two sets of Micro-electro-mechanical systems (MEMS) deformable mirrors manufactured by Boston Micromachines Corporation were exposed to vibration and thermal cycles representative of launch conditions. The first set were 952-actuator Kilo-DMs that successfully demonstrated 100% actuator survival and achieved ~1e-8 contrast after the environment test. The second round used an engineering-grade 2048-actuator deformable mirror on which few changes were identified after the environmental test. However, each actuator that changed behavior was flagged as anomalous beforehand or was directly adjacent to a defective actuator. From this result, we hypothesized that typical actuators on a science grade deformable mirror are robust to environmental testing. A third set of 2048-actuator deformable mirror have been procured for a planned test to characterize the deformable mirrors using interferometric measurements, contrast results on a new in-air coronagraph testbed, and infrared microscopy on the internal structure of the MEMS devices.

Lam, Charlie↗

High Temperature Protonic Conductors

High Temperature Protonic Conductors (HTPC) with the perovskite structure are envisioned for electrochemical membrane applications such as H2 separation, H2 sensors and fuel cells. Successive membrane commercialization is dependent upon addressing issues with H2 permeation rate and environmental stability with CO2 and H2O. HTPC membranes are conventionally fabricated by solid-state sintering. Grain boundaries and the presence of intergranular second phases reduce the proton mobility by orders of magnitude than the bulk crystalline grain. To enhanced protonic mobility, alternative processing routes were evaluated. A laser melt modulation (LMM) process was utilized to fabricate bulk samples, while pulsed laser deposition (PLD) was utilized to fabricate thin film membranes . Sr3Ca(1+x)Nb(2-x)O9 and SrCe(1-x)Y(x)O3 bulk samples were fabricated by LMM. Thin film BaCe(0.85)Y(0.15)O3 membranes were fabricated by PLD on porous substrates. Electron microscopy with chemical mapping was done to characterize the resultant microstructures. High temperature protonic conduction was measured by impedance spectroscopy in wet air or H2 environments. The results demonstrate the advantage of thin film membranes to thick membranes but also reveal the negative impact of defects or nanoscale domains on protonic conductivity.

Dynys, Fred↗

Electrical, structural and chemical characterization of Si sheet material

Web Dendritic Si ribbons are deformed under a well-defined four point bending stress. Since the mechanical properties of Si are known to depend on the 0 content of the material, 0 measurements using Fourier Transform Infrared Spectroscopy were done to determine a proper control sample of non-defected single crystal Si. Four point bending revealed a unique two step bending behavior for the Web Si ribbons. An initial theory for this behavior involves the interaction of the dislocations generated by the deformation with the central twin planes of the ribbons. Measurements showed a uniformly high 0 content for the Web Si ribbons, approximately 10 to the 18th power atoms/cu.cm. The Web samples had a much broader absorption peak at 9 microns than is usually seen for well-annealed single crystal Si. This broadening is thought to be related to stress in the Web Si ribbons. Two samples containing a known amount of residual stress support this hypothesis. Also, a shoulder on the infrared absorption peak associated with interstitial 0 in Si appears in the transmission vs. wavenumber plots for some of the Web samples. This shoulder has been associated with 0-vacancy complexes or with 0 at dislocations. The O content and configuration do not seem to correlate with the growth configuration of the Web Si ribbon.

Ast, D. G.↗

Omics Research on the International Space Station

The International Space Station (ISS) is an orbiting laboratory whose goals include advancing science and technology research. Completion of ISS assembly ushered a new era focused on utilization, encompassing multiple disciplines such as Biology and Biotechnology, Physical Sciences, Technology Development and Demonstration, Human Research, Earth and Space Sciences, and Educational Activities. The research complement planned for upcoming ISS Expeditions 45&46 includes several investigations in the new field of omics, which aims to collectively characterize sets of biomolecules (e.g., genomic, epigenomic, transcriptomic, proteomic, and metabolomic products) that translate into organismic structure and function. For example, Multi‐Omics is a JAXA investigation that analyzes human microbial metabolic cross‐talk in the space ecosystem by evaluating data from immune dysregulation biomarkers, metabolic profiles, and microbiota composition. The NASA OsteoOmics investigation studies gravitational regulation of osteoblast genomics and metabolism. Tissue Regeneration uses pan‐omics approaches with cells cultured in bioreactors to characterize factors involved in mammalian bone tissue regeneration in microgravity. Rodent Research‐3 includes an experiment that implements pan‐omics to evaluate therapeutically significant molecular circuits, markers, and biomaterials associated with microgravity wound healing and tissue regeneration in bone defective rodents. The JAXA Mouse Epigenetics investigation examines molecular alterations in organ specific gene expression patterns and epigenetic modifications, and analyzes murine germ cell development during long term spaceflight. Lastly, Twins Study ("Differential effects of homozygous twin astronauts associated with differences in exposure to spaceflight factors"), NASA's first foray into human omics research, applies integrated analyses to assess biomolecular responses to physical, physiological, and environmental stressors associated with spaceflight.

Love, John↗

A Study of Lessons and Experiences of NASA Centers in the Use of Commercial Off the Shelf (COTS) Electronics

The NASA Engineering and Safety Center (NESC) sponsored a Technical Assessment relating to the utilization of commercial-off-the-shelf (COTS) electrical, electronic, and electromechanical (EEE) parts in spaceflight systems at NASA Centers. The assessment had two primary goals. The first was to capture each NASA Centers’ current practices, best practices, lessons learned and Center-proposed recommendations on the use of COTS EEE parts and assemblies in critical ground support equipment (GSE). The second was to provide recommendations on the use of COTS, including a set of current best practices based on the Centers’ current and best practices and the NESC team’s discussions. One key achievement made by the assessment team was the characterization of the term Industry Leading Parts Manufacturers (ILPMs) as parts manufacturer with high volume automatic production facilities and which can provide documented proof of the technology, process and product qualification, and its implementation of the best practices for “zero defects” for parts quality, reliability and workmanship. The assessment concluded with numerous findings, takeaways and recommendations that will be discussed during this presentation.

commercial↗

CFD Growth of 3C-SiC on 4H/6H Mesas

This article describes growth and characterization of the highest quality reproducible 3C-SiC heteroepitaxial films ever reported. By properly nucleating 3C-SiC growth on top of perfectly on-axis (0001) 4H-SiC mesa surfaces completely free of atomic scale steps and extended defects, growth of 3C-SiC mesa heterofilms completely free of extended crystal defects can be achieved. In contrast, nucleation and growth of 3C-SiC mesa heterofilms on top of 4H-SiC mesas with atomic-scale steps always results in numerous observable dislocations threading through the 3C-SiC epilayer. High-resolution X-ray diffraction and transmission electron microscopy measurements indicate non-trivial in-plane lattice mismatch between the 3C and 4H layers. This mismatch is somewhat relieved in the step-free mesa case via misfit dislocations confined to the 3C/4H interfacial region without dislocations threading into the overlying 3C-SiC layer. These results indicate that the presence or absence of steps at the 3C/4H heteroepitaxial interface critically impacts the quality, defect structure, and relaxation mechanisms of single-crystal heteroepitaxial 3C-SiC films.

Neudeck, Philip G.↗

Characterization of 3C-SiC Films Grown on 4H- and 6H-SiC Substrate Mesas During Step-Free Surface Heteroepitaxy

This paper reports detailed structural characterization of 3C-SiC heteroepitaxial films grown on 4H- and 6H-SiC mesa surfaces. 3C-SiC heterofilms grown by the "step-free surface heteroepitaxy" process, free of double-positioning boundary (DPB) and stacking-fault (SF) defects, were compared to less-optimized 3C-SiC heterofilms using High Resolution X-ray Diffraction (HRXRD), High Resolution Cross-sectional Transmission Electron Microscopy (HRXTEM), molten potassium hydroxide (KOH) etching, and dry thermal oxidation. The results suggest that step free surface heteroepitaxy enables remarkably benign partial lattice mismatch strain relief during heterofilm growth.

Neudeck, Philip G.↗

Laboratory instrumentation and techniques for characterizing multi-junction solar cells for space applications

Multi-junction solar cells are attractive for space applications because they can be designed to convert a larger fraction of AMO into electrical power at a lower cost than single-junction cells. The performance of multi-junction cells is much more sensitive to the spectral irradiance of the illuminating source than single-junction cells. The design of high efficiency multi-junction cells for space applications requires matching the optoelectronic properties of the junctions to AMO spectral irradiance. Unlike single-junction cells, it is not possible to carry out quantum efficiency measurements using only a monochromatic probe beam and determining the cell short-circuit current assuming linearity of the quantum efficiency. Additionally, current-voltage characteristics can not be calculated from measurements under non-AMO light sources using spectral-correction methods. There are reports in the literature on characterizing the performance of multi junction cells by measuring and convoluting the quantum efficiency of each junction with the spectral irradiance; the technique is of limited value for the characterization of cell performance under AMO power-generating conditions. We report the results of research to develop instrumentation and techniques for characterizing multi junction solar cells for space . An integrated system is described which consists of a standard lamp, spectral radiometer, dual-source solar simulator, and personal computer based current-voltage and quantum efficiency equipment. The spectral radiometer is calibrated regularly using the tungsten-halogen standard lamp which has a calibration based on NIST scales. The solar simulator produces the light bias beam for current-voltage and cell quantum efficiency measurements. The calibrated spectral radiometer is used to 'fit' the spectral irradiance of the dual-source solar simulator to WRL AMO data. The quantum efficiency apparatus includes a monochromatic probe beam for measuring the absolute cell quantum efficiency at various voltage biases, including the voltage bias corresponding to the maximum-power point under AMO light bias. The details of the procedures to 'fit' the spectral irradiance to AMO will be discussed. An assessment of the role of the accuracy of the 'fit' of the spectral irradiance and probe beam intensity on measured cell characteristics will be presented. quantum efficiencies were measured with both spectral light bias and AMO light bias; the measurements show striking differences. Spectral irradiances were convoluted with cell quantum efficiencies to calculate cell currents as function of voltage. The calculated currents compare with measured currents at the 1% level. Measurements on a variety of multi-junction cells will be presented. The dependence of defects in junctions on cell quantum efficiencies measured under light and voltage bias conditions will be presented. Comments will be made on issues related to standards for calibration, and limitations of the instrumentation and techniques. Expeditious development of multi-junction solar cell technology for space presents challenges for cell characterization in the laboratory.

Woodyard, James R.↗

Scaled CMOS Technology Reliability Users Guide

The desire to assess the reliability of emerging scaled microelectronics technologies through faster reliability trials and more accurate acceleration models is the precursor for further research and experimentation in this relevant field. The effect of semiconductor scaling on microelectronics product reliability is an important aspect to the high reliability application user. From the perspective of a customer or user, who in many cases must deal with very limited, if any, manufacturer's reliability data to assess the product for a highly-reliable application, product-level testing is critical in the characterization and reliability assessment of advanced nanometer semiconductor scaling effects on microelectronics reliability. A methodology on how to accomplish this and techniques for deriving the expected product-level reliability on commercial memory products are provided.Competing mechanism theory and the multiple failure mechanism model are applied to the experimental results of scaled SDRAM products. Accelerated stress testing at multiple conditions is applied at the product level of several scaled memory products to assess the performance degradation and product reliability. Acceleration models are derived for each case. For several scaled SDRAM products, retention time degradation is studied and two distinct soft error populations are observed with each technology generation: early breakdown, characterized by randomly distributed weak bits with Weibull slope (beta)=1, and a main population breakdown with an increasing failure rate. Retention time soft error rates are calculated and a multiple failure mechanism acceleration model with parameters is derived for each technology. Defect densities are calculated and reflect a decreasing trend in the percentage of random defective bits for each successive product generation. A normalized soft error failure rate of the memory data retention time in FIT/Gb and FIT/cm2 for several scaled SDRAM generations is presented revealing a power relationship. General models describing the soft error rates across scaled product generations are presented. The analysis methodology may be applied to other scaled microelectronic products and their key parameters.

Microelectronics Reliability↗

The Effect of the Wall Contact and Post-Growth C001-Down on Defects in CdTe Crystals Grown by Contactless PVT

In crystal growth, the quality of the final material may depend, among other factors, on its interaction with the walls of the ampoule during and after the growth, and on the rate of the crystal cool-down at the end of ate the process. To investigate the above phenomena, a series of CdTe crystal growth processes was carried out, The crystals were grown by physical vapor transport without contact with the side walls of the silica glass ampoules, applying the Low Supersaturation Nucleation technique. The source temperature was 930 C, the undercooling was a few degrees. The crystals, having the diameter of 25 mm, grew at the rate of a few mm per day. The post-growth cool-down to the room temperature was conducted at different rates, and lasted from a few minutes to four days. The crystals were characterized using chemical etching low temperature luminescence, and Synchrotron White Beam X-ray Topography techniques. The dislocation (etch pit) density was measured and its distribution was analyzed by comparison with Poisson curves and with the Normalized Radial Distribution Correlation Function. It was found that the contact of the crystal with silica leads to a strain field and high (in the 105 sq cm range) dislocation (etch pit) density. Similar defect concentrations were found in crystals subjected to fast post-growth cool-down. Typical EPD values for lower cool-down rates and in regions not affected by wall interactions are in the lower 10(exp 4) sq cm range. In some areas the actual dislocation density was about 10(exp 3) sq cm or even less. No apparent effect of the cool-down rate on polygonization was observed. A fine structure could be discerned in low-temperature PL spectra of crystals with low dislocation density.

Palosz, W.↗

Characterization and In-Situ Monitoring of ZnSe Crystal Growth by Seeded PVT for Microgravity Applications

Crystal growth from the vapor phase continues to play a significant role in the production of II-VI semiconductor compounds (ZnO, ZnTe, CdTe, etc.) and SiC. As compared to melt growth methods (where available) the advantages are: (1) lower growth temperature(s); (2) reduction in defect concentration; (3) additional purification; and (4) enhanced crystal perfection. A powerful tool in determining the mechanism of PVT is microgravity. Under normal gravity conditions the transport mechanism is a superposition of diffusive and convective fluxes. Microgravity offers the possibility of studying the transport properties without the influence of convective effects. Research on the crystal growth of ZnSe by PVT (P.I.: Su of NASA/MSFC) will help to clarify the effects of convection on crystal growth. A crystal growth furnace with in-situ and real time optical monitoring capabilities was constructed and used to monitor the vapor composition and growing crystal surface morphology during the PVT growth of ZnSe. Using photoluminescence and SIMS, ex-situ, the incorporation of point defects (Zn vacancy) and impurities was found to be correlated to the gravity vector due to the influence of the convective flow. A summary of the results to date will be presented.

Feth, Shari T.↗

Development and Implementation of Nationally Recognized Laboratory for Material Characterization in the Microwave and Millimeter Wave Bands

This report provides a progress update for establishing a laboratory for material characterization in the microwave and millimeter wave bands. During the launch of STS-124 a large area of refractory bricks was liberated from the flame trench built for the exhaust of the solid rocket motors (SRM). The inspection of the liberated area revealed many defects, debonds, corrosion and voids that are a cause for concern relating to the health of the entire flame trench wall. A request for assistance was received for the nondestructive evaluation (NDE) of these anomalies behind the refractory bricks, with the primary interest being a health assessment based on the quality of the brick, epoxy and concrete bond.

Hepburn, Frank L.↗