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Empowering Capacitive Devices: Harnessing Transfer Learning for Enhanced Data-Driven Optimization
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Strain Heterogeneity and Extended Defects in Halide Perovskite Devices
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Quantification of Lanthanides on a PMMA Microfluidic Device with Three Optical Pathlengths Using PCR of UV–Visible, NIR, and Raman Spectroscopy
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High-performance 2D electronic devices enabled by strong and tough two-dimensional polymer with ultra-low dielectric constant
As the feature size of microelectronic circuits is scaling down to nanometer order, the increasing interconnect crosstalk, resistance-capacitance (RC) delay and power consumption can limit the chip performance and reliability. To address these challenges, new low-k dielectric (k < 2) materials need to be developed to replace current silicon dioxide (k = 3.9) or SiCOH, etc. However, existing low-k dielectric materials, such as organosilicate glass or polymeric dielectrics, suffer from poor thermal and mechanical properties. Two-dimensional polymers (2DPs) are considered promising low-k dielectric materials because of their good thermal and mechanical properties, high porosity and designability. Here, we report a chemical-vapor-deposition (CVD) method for growing fluoride rich 2DP-F films on arbitrary substrates. We show that the grown 2DP-F thin films exhibit ultra-low dielectric constant (in plane k = 1.85 and out-of-plane k = 1.82) and remarkable mechanical properties (Young’s modulus > 15 GPa). We also demonstrated the improved performance of monolayer MoS 2 field-effect-transistors when utilizing 2DP-F thin films as dielectric substrates.
Visualizing electronic structure of twisted bilayer MoTe 2 in devices
The pursuit of emergent quantum phenomena lies at the forefront of modern condensed matter physics. A recent breakthrough in this arena is the discovery of the fractional quantum anomalous Hall effect (FQAHE) in twisted bilayer MoTe₂ (tbMoTe₂), marking a paradigm shift and establishing a versatile platform for exploring the intricate interplay among topology, magnetism, and electron correlations. While significant progress has been made through both optical and electrical transport measurements, direct experimental insights into the electronic structure – crucial for understanding and modeling this system – have remained elusive. Here, using spatially and angle-resolved photoemission spectroscopy (μ-ARPES), we directly map the electronic band structure of tbMoTe₂. We identify the valence band maximum, whose partial filling underlies the FQAHE, at the K points, situated approximately 150 meV above the Γ valley. By fine-tuning the doping level via in-situ alkali metal deposition, we also resolve the conduction band minimum at the K point, providing direct evidence that tbMoTe₂ exhibits a direct band gap – distinct from all previously known moiré bilayer transition metal dichalcogenide systems. These results offer critical insights for theoretical modeling and advance our understanding of fractionalized excitations and correlated topological phases in this emergent quantum material.
Wafer-scale integration of freestanding photonic devices with color centers in silicon carbide
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XeF 2 gas assisted focused electron beam induced etching of niobium thin films: towards direct write editing of niobium superconducting devices
Focused electron beam induced etching (FEBIE) of Nb films produced a maximum etching yield of 3 Nb atoms/e − while varying beam energy, beam current, dwell time, and XeF 2 precursor working pressure. An optimized etch resolution of 17 nm was achieved.
Single-step, conformal, and efficient assembly of ligand-exchanged quantum dots for optoelectronic devices via an electric field
In this work the authors combined in-solution ligand exchange with an electrically driven film deposition technique to produce conformal PbSe quantum dot films on non-flat substrates in a single step without the need for post deposition processing.
Doped and functionalized non-Ti-MXenes for flexible and wearable electronic devices
The unique physicochemical properties of non-Ti-MXenes make them excellent class of materials for flexible and wearable electronics.
Use of current-potential patches to obtain fundamental improvements to the coils of magnetic fusion devices
A central issue in the design of tokamaks or stellarators is the coils that produce the external magnetic fields. The freedom that remains unstudied in the design of coils is enormous. This freedom could be quickly studied computationally at low cost with high reliability. In particular, the space between toroidal field and modular coils that blocks access to the plasma chamber could be increased by a large factor. The concept of current-potential patches, which was developed in Todd Elder's thesis, provides a method for separating the study of the feasibility of coils with attractive physics properties from the engineering design of specific coils. In addition to enhanced accessibility, coils can be designed for increased plasma-coil separation, insensitivity to coil position errors, and plasma control.
An extended variational method for the resistive wall mode in toroidal plasma confinement devices
The external-kink stability of a toroidal plasma surrounded by a rigid resistive wall is investigated. The well-known analysis of Haney and Freidberg is rigorously extended to allow for a wall that is sufficiently thick that the thin-shell approximation does not necessarily hold. A generalized Haney–Freidberg formula for the growth-rate of the resistive wall mode is obtained. Thick-wall effects do not change the marginal stability point of the mode but introduce an interesting asymmetry between growing and decaying modes. Growing modes have growth-rates that exceed those predicted by the original Haney–Freidberg formula. On the other hand, decaying modes have decay-rates that are less than those predicted by the original formula. The well-known Hu–Betti formula for the rotational stabilization of the resistive wall mode is also generalized to take thick-wall effects into account. Increasing wall thickness facilitates the rotational stabilization of the mode, because it decreases the critical toroidal electromagnetic torque that the wall must exert on the plasma. On the other hand, the real frequency of the mode at the marginal stability point increases with increasing wall thickness.
Ionization effects in single-shot carrier-envelope phase detection with gas-gap devices
The carrier-envelope phase (CEP) is a key parameter for attosecond waveform control of ultrashort laser pulses. For laser systems with high repetition rates, however, single-shot CEP detection is still challenging. Building on recent findings on phase detection with electric current generation in gases, we show that with an optimized detection method, a long-term stable single-shot phase detection is feasible. We investigate the achievable performance depending on various parameters such as pulse duration, gas pressure, or incident intensity. The latter exhibits a regime where the saturation of the ionization process boosts the phase sensitivity of the signal, which is elucidated by numerical calculations.