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At least 307 records · Page 17

First-Principles Calculations of the Electrical Conductivity of Carbon Nanotubes Functionalized with Copper and Nitrogen: Implications for Electronics, Energy Storage, and Nanodevices

In this work, we investigate the electrical conductivity of carbon nanotubes (CNTs), with a particular focus on the effects of doping. Using first-principles-based approaches, we study the electronic structure, phonon dispersion, and electron–phonon scattering to understand the finite-temperature electrical transport properties in CNTs. Our study covers both prototypical metallic and semiconducting CNTs, with special emphasis on the influence of typical defects such as vacancies and the incorporation of copper or nitrogen, such as pyridinic N, pyrrolic N, graphitic N, and oxidized N. Our theoretical study shows significant improvements in the electrical conduction properties of copper-CNT composites, especially when semiconducting CNTs are functionalized with nitrogen. Doping is found to cause significant changes in the electronic density of states near the Fermi level, which affects the electrical conductivity. Calculations show that certain types of functional groups, such as N-pyrrolic, result in more than 30-fold increase in the conductivity of semiconducting CNTs compared to Cu-incorporated CNTs alone. For metallic CNTs, the conductivity is in agreement with existing experimental data, and our prediction of significant increases in conductivity with N-pyrrolic functional group is consistent with recent experimental results, demonstrating the effectiveness of doping in modifying conductivity. In conclusion, our study provides valuable insight into the electronic properties of doped CNTs and contributes to the development of ultrahigh conductivity CNT composites.

36 MATERIALS SCIENCE↗

Ce-Doping and Reduction Annealing Effects on Magnetic Properties of Pr{sub 2-x}Ce{sub x}CuO{sub 4} Nanoparticles

Magnetic properties of reduced T’-Pr{sub 2-x}Ce{sub x}CuO{sub 4} (T’-PCCO) nanoparticles with x = 0, 0.10, and 0.15 have been investigated. The T’-PCCO samples were synthesized by the chemically dissolved method with HNO{sub 3} as dissolving agents and by the succeeding calcination at 1000 °C for 15 h in air. The reduced T’-PCCO samples were obtained by the reduction annealing at 700 °C for 10 h in Argon atmosphere and at 700 °C for 12 h in vacuum. Rietveld analyses of the X-ray diffraction (XRD) patterns for all the samples have revealed dependences of the c-axis length and the crystal size on the Ce doping and the reduction annealing. XRD analyses and transmission electron microscopy (TEM) images have confirmed T’-PCCO nanoparticles with the size of around 40–100 nm. Magnetic properties of all the T’-PCCO nanoparticles were studied by a superconducting quantum interference device (SQUID) showing a dominant paramagnetic feature with very weak ferromagnetism in the as-synthesized samples at room temperature. It has changed to a pure paramagnetic feature after the reduction annealing in argon atmosphere and an enhanced ferromagnetism through vacuum annealing. This is probably due to the change in the number of oxygen vacancies through the defect recovery and the removal of excess oxygen after both reduction annealing processes, respectively.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Effect of high scandium doping in barium zirconate on nickel diffusion and performance of proton-conducting solid oxide electrolyzer cells

Proton-conducting solid oxide electrolyzer cells (p-SOECs) are emerging but promising technologies for hydrogen production. However, due to the lack of a robust electrolyte, p-SOECs struggle simultaneously to display high performance, Faradaic efficiency, and durability. Motivated by its high proton concentrations and stability as a barium zirconate, we have investigated BaZr 0.6 Sc 0.4 O 3-δ (BZSc40) as a potential next-generation p-SOEC electrolyte. Here, we found elevated levels of NiO diffusion through BZSc40 electrolytes during high-temperature sintering, attributed to the large oxygen vacancy concentrations present in BZSc40, as revealed by first-principle computational results. Controlling NiO diffusion is critical, as it can facilitate densification and grain size growth, but it may also detrimentally impact performance by causing electronic leakage. By optimizing sintering temperature when fabricating BZSc40 cells, we successfully controlled NiO diffusion, achieving sufficient electrolyte densification along with high performance and Faradaic efficiency. BZSc40 cells reached −0.99 A/cm 2 at 1.3 V and 600 °C and exhibited enhanced durability with a 3.37 mV/kh degradation rate at −0.8 A/cm 2 over a 200-h testing period. BZSc40 electrolytes demonstrated superior performance over BaZr 0.8 Y 0.2 O 3-δ (BZY20). In addition to elevated current densities and grain sizes, BZSc40 cells achieved Faradaic efficiencies of 76 % compared to 54 % for BZY20 at −0.2 A/cm 2 and 600 °C. This work lays the foundation for BZSc40 as a potential electrolyte due to its advantages over BZY20 while demonstrating the significance of controlling NiO diffusion when fabricating p-SOECs.

Electrolyzer↗

First-principles elucidation of the effects of Al-doping on Li-ion diffusion in LiCoO 2

Al-doped garnet Li 7 La 3 Zr 2 O 12 solid-electrolyte and LiCoO 2 cathode are promising choices as catholyte materials in all solid-state Li batteries, however, interdiffusion of Al is commonly evident during high-temperature processing and electrochemical cycling. Furthermore, to address the impact of Al interdiffusion on Li + transport properties in LiCoO 2 , we carried out a systematic evaluation of Al doping on Li + diffusion barriers in LiCoO 2 using first-principles based methods. Following the monovacancy diffusion mechanism, Al-doping (primarily at the Co site) is found to improve Li diffusion kinetics in the LiCoO 2 lattice due to favorable CoO 6 octahedral distortion experienced at the transition states. However, when considering the previously established dominant divacancy diffusion mechanism, slower Li diffusion is generally expected. In addition, a broad variation of Li diffusion barriers is observed upon Al doping, which suggests the system may suffer from non-uniform Li incorporation and diffusion that adversely affects its rate capacity during cycling. In summary, this work highlights, for the rational design of catholyte of all solid-state batteries, special attention may need to be paid to address the potential impact of non-intentional doping induced during processing on the overall electrochemical performance of the catholyte.

Al-doped LiCoO2↗

Structural and Reactivity Effects of Secondary Metal Doping into Iron-Nitrogen-Carbon Catalysts for Oxygen Electroreduction

While improved activity was recently reported for bimetallic iron-metal-nitrogen-carbon (FeMNC) catalysts for the oxygen reduction reaction (ORR) in acid medium, the nature of active sites and interactions between the two metals are poorly understood. Here, FeSnNC and FeCoNC catalysts were structurally and catalytically compared to their parent FeNC and SnNC catalysts. While CO cryo-chemisorption revealed a twice lower site density of M-N x sites for FeSnNC and FeCoNC relative to FeNC and SnNC, the mass activity of both bimetallic catalysts is 50–100% higher than that of FeNC due to a larger turnover frequency in the bimetallic catalysts. Electron microscopy and X-ray absorption spectroscopy identified the coexistence of Fe-N x and Sn-N x or Co-N x sites, while no evidence was found for binuclear Fe-M-N x sites. 57 Fe Mössbauer spectroscopy revealed that the bimetallic catalysts feature a higher D 1 /D 2 ratio of the spectral signatures assigned to two distinct Fe-N x sites, relative to the FeNC parent catalyst. Furthermore, the addition of the secondary metal favored the formation of D 1 sites, associated with the higher turnover frequency.

36 MATERIALS SCIENCE↗

High performance ionic-liquid-gated air doped diamond field-effect transistors

Here we report successful fabrication of high performance ion-gated field-effect transistors (FETs) on hydrogenated diamond surface. Investigations on the hydrogen (H)-terminated diamond by Hall effect measurements shows Hall mobility as high as ~200 cm 2 V –1 s –1 . In addition we demonstrate a rapid fabrication scheme for achieving stable high performance devices useful for determining optimal growth and fabrication conditions. We achieved H-termination using hydrogen plasma treatment with a sheet resistivity as low as ~1.3 kΩ/sq. Conductivity through the FET channel is studied as a function of bias voltage on the liquid ion-gated electrode from –3.0 to 1.5 V. Stability of the H-terminated diamond surface was studied by varying the substrate temperature up to 350 °C. It was demonstrated that the sheet resistance and carrier densities remain stable over 3 weeks in ambient air atmosphere even at substrate temperatures up to 350 °C, whereas increasing temperature beyond this limit has effected hydrogenation. This study opens new avenues for carrying out fundamental research on diamond FET devices with ease of fabrication and high throughput.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Ion Correlation Effects in Salt-Doped Block Copolymers

Here, we apply classical density functional theory to study how salt changes the microphase morphology of diblock copolymers. Polymers are freely jointed and one monomer type favorably interacts with ions, to account for the selective solvation that arises from different dielectric constants of the microphases. By including correlations from liquid state theory of an unbound reference fluid, the theory can treat chain behavior, microphase separation, ion correlations, and preferential solvation, at same coarse grained level. We show good agreement with molecular dynamics simulations.

36 MATERIALS SCIENCE↗

Effect of a Nitrogen Doping and a Mechanical Stress on the Adsorption Capacity of Graphdiene

The quantum chemical simulation of adsorption of atomic hydrogen on pristine and nitrogen-doped graphdienes has been performed. The preferential sites, adsorption on which is most energetically beneficial, are indicated. The nitrogen presence is shown to substantially increase the adsorption capacity of the sheet. A capacity of the nitrogen-doped graphdiene to be reversibly stretched by 4% under action of external mechanical stress is demonstrated. A mechanical stretching is found to enable the control of the adsorption properties of pristine and also doped graphdienes.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Effect of p-doping on the intensity noise of epitaxial quantum dot lasers on silicon

This work experimentally investigates the impact of p-doping on the relative intensity noise (RIN) properties and subsequently on the modulation properties of semiconductor quantum dot (QD) lasers epitaxially grown on silicon. Owing to the low threading dislocation density and the p-modulation doped GaAs barrier layer in the active region, the RIN level is found very stable with temperature with a minimum value of − <#comment/> 150 d B / H z . The dynamical features extracted from the RIN spectra show that p-doping between zero and 20 holes/dot strongly modifies the modulation properties and gain nonlinearities through increased internal losses in the active region and thereby hinders the maximum achievable bandwidth. Overall, this Letter is important for designing future high-speed and low-noise QD devices integrated in future photonic integrated circuits.

Duan, Jianan (ORCID:0000000177104287)↗