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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 307 records · Page 17

Recent trends in all-organic polymer dielectrics for high-temperature electrostatic energy storage capacitors

Electrostatic energy storage (EES) capacitors are critical for renewable energy and high-power systems, driving the search for dielectric materials that combine superior electrical insulation, mechanical flexibility, low density, cost-effectiveness, and processability. Polymer-based dielectrics have emerged as leading candidates, particularly for high electric field applications. However, conventional polymers often fail to meet the demands of high-temperature environments due to increased electrical conductivity and reduced discharged energy density at elevated temperatures, resulting in energy loss and reduced performance. High glass transition temperature (T g) polymers show promise but require further optimization to enhance their energy storage capabilities under thermal and electrical stress. This review provides a comprehensive update on recent advancements in high-T g polymer-based dielectrics for EES capacitors, focusing on both intrinsic polymers and all-organic composites. It outlines key design principles, critical performance parameters, and innovative strategies—such as nanofiller doping, layered architectures, physical blending, and chemical crosslinking—to improve electrical, thermal, and mechanical properties. The review also highlights emerging trends, including the integration of machine learning algorithms to explore novel polymer structures and expand the chemical design space. By bridging the gap between academic research and industrial application, this review aims to accelerate the development of next-generation dielectric materials capable of balancing multiple performance metrics for high-temperature EES capacitors.

Xie, Zongliang↗

Brightening of Dark States in CsPbBr 3 Quantum Dots Caused by Light–Induced Magnetism

Lead halide perovskite quantum dots (QDs) have shown great potential for optoelectronic and quantum photonic applications. Although controversy remains about the electronic fine structures of bulk perovskites due to the strong spin-orbit coupling affecting the conduction bands, compelling evidence indicates that the ground states of perovskite QDs remain dark, limiting their applications in optoelectronic devices. In this study, it is demonstrated that photoexcitation can induce large intrinsic magnetic fields in Mn-doped CsPbBr 3 perovskite QDs. Equivalent to applying an external magnetic field, the light-induced field causes giant Zeeman splitting to the bright triplet states and brightens the dark singlet ground state, thus effectively rendering a partially bright ground state in the doped QDs. These findings here may contribute to the understanding of the electronic fine structures in perovskite QDs and demonstrate a potential approach for creating semiconductor nanostructures that can serve as bright light sources.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Quantum Magnetic Properties and Metal‐to‐Insulator Transition in Chemically Doped Calcium Ruthenate Perovskite

Ruthenates provide a comprehensive platform to study a plethora of novel properties, such as quantum magnetism, superconductivity, and magnetic fluctuation mediated metal–insulator transition (MIT). Herein, an overview of quantum mechanical phenomenology in calcium ruthenium oxide with varying compositions is provided. While the stoichiometric composition of exhibits non‐fermi liquid (FL) behavior with quasi‐criticality, chemically doped compounds depict prominent signatures of quantum magnetic fluctuations at low temperature that in some cases are argued to mediate in metal–insulator transition. In the case of cobalt‐doped , an unusual continuum fluctuation is found to persist deep inside the glassy phase of the material. These observations reflect the richness of the ruthenate research platform in the study of quantum magnetic phenomena of fundamental importance.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Understanding and Tuning Magnetism in Layered Ising‐Type Antiferromagnet FePSe 3 for Potential 2D Magnet

Abstract Recent developments in 2D magnetic materials have motivated the search for new van der Waals magnetic materials, especially Ising‐type magnets with strong magnetic anisotropy. Fe‐based M P X 3 ( M = transition metal, X = chalcogen) compounds such as FePS 3 and FePSe 3 both exhibit an Ising‐type magnetic order, but FePSe 3 receives much less attention compared to FePS 3 . This work focuses on establishing the strategy to engineer magnetic anisotropy and exchange interactions in this less‐explored compound. Through chalcogen and metal substitutions, the magnetic anisotropy is found to be immune against S substitution for Se whereas tunable only with heavy Mn substitution for Fe. In particular, Mn substitution leads to a continuous rotation of magnetic moments from the out‐of‐plane direction toward the in‐plane. Furthermore, the magnetic ordering temperature displays non‐monotonic doping dependence for both chalcogen and metal substitutions but due to different mechanisms. These findings provide deeper insight into the Ising‐type magnetism in this important van der Waals material, shedding light on the study of other Ising‐type magnetic systems as well as discovering novel 2D magnets for potential applications in spintronics.

2D magnet↗

Effects of Site and Magnetic Disorder on the Oxygen Vacancy Formation and Electronic and Optical Properties of La x Sr 1– x CoO 3–δ and SrFe y Co 1– y O 3–δ [plus supplemental information]

Disorder is an inevitable issue in practical applications of perovskites with the A-site occupied by La/Sr and the B-site occupied by Co/Fe. We performed density functional theory calculations to reveal the site and magnetic disorder effect on the oxygen vacancy formation and the electronic and optical properties of La x Sr 1–x CoO 3–δ and SrFe y Co 1–y O 3–δ systems. Generally, site disorder has little influence on the physical properties we studied, while magnetic disorder has a property-dependent effect for La A-site and Fe B-site doping of SrCoO 3 . Compared to ordered ferromagnetic (FM) calculations, disordered paramagnetic (PM) results can better describe the high-temperature behavior of lattice expansion and the multiple spin states of Co ions in La x Sr 1–x CoO 3 . The oxygen vacancy formation energy results show that the magnetic disorder has a more remarkable effect on SrFe y Co 1–y O 3–δ systems with a robust magnetic order than that on the La x Sr 1–x CoO 3–δ systems with a fragile magnetic order. The electronic structures in the PM phase have less spin polarization and broadened bands, by which the optical absorptions from the single spin channel transition in the FM phase have an obvious change in the magnitude and/or the trend. Furthermore, our work provides guidance for where and why to consider the disorder.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Trap-Assisted Dopant Compensation Prevents Shunting in Poly-Si Passivating Interdigitated Back Contact Silicon Solar Cells

Using a trap-assisted compensation model, we explain why polycrystalline Si (poly-Si) passivating contacts are able to achieve low leakage current between the doped fingers of interdigitated back contact (IBC) monocrystalline Si solar cells despite mixing of boron and phosphorus dopants in the isolation region. The fill factor of IBC solar cells is strongly affected by the electrical isolation region between n- and p-type fingers, as this region is critical in minimizing shunting losses. During fabrication of monocrystalline Si solar cells with poly-Si passivating contacts, the intrinsic poly-Si isolation region inevitably gets contaminated with both p- and n-type dopants. Using dopant profiles measured with time-of-flight secondary ion mass spectrometry and scanning probe measurements of the isolation region, we demonstrate that despite the dopant spreading during cell processing, a well-compensated region between the doped fingers exists that prevents shunting. The trap-assisted dopant compensation mechanism significantly widens the compensated region to tens of microns, where the residual dopant densities are below the trap density. This enables a high-resistivity region, resulting in low shunt current. Using one-dimensional (1-D) finite element diode simulations, we identify the design parameters and experimental conditions under which a sufficiently resistive region can form. Furthermore, our measurements of 2-D local resistivity and work function maps across the isolation region using scanning spreading resistance microscopy and Kelvin probe force microscopy demonstrate the existence of a highly resistive, wide compensated region and confirm our proposed compensation mechanism. For our structures, this region is ~25 µm in width within a ~150 µm wide finger isolation region with nearly 3 orders of magnitude higher resistivity than the regions dominated by a single type of dopant.

14 SOLAR ENERGY↗

Disappearance of Superconductivity Due to Vanishing Coupling in the Overdoped Bi 2 Sr 2 CaCu 2 O 8+δ

In cuprate superconductors, superconductivity is accompanied by a ‘plethora of orders’, and phenomena that complicate our understanding of superconductivity in these materials. Prominent in the underdoped regime, these orders weaken or vanish with overdoping. Here, we approach the superconducting phase from the more conventional overdoped side. We present angle-resolve photoemission spectroscopy studies of Bi 2 Sr 2 CaCu 2 O 8+δ , cleaved and annealed in ozone to increase the doping all the way to the non-superconducting phase. In this work, we show that the mass renormalizationin the antinodal region of the Fermi surface, associated with the structure in the quasiparticle self-energy, that possibly reflects the pairing, weakens with doping and completely disappears precisely where superconductivity disappears the evidence that in the overdoped regime, superconductivity is determined by the coupling strength. A doping dependence and an abrupt disappearance above the transition temperature eliminate phononic mechanism of the observed renormalization and identify the onset of spin-fluctuations as its likely origin.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Introduction to special issue: Colloidal quantum dots

The quantum confinement effect has driven the development and exploration of colloidal semiconductor nanocrystals over approximately the past three decades. These semiconductor nanostructures are typically synthesized as stable colloidal dispersions in solution-phase chemical batch reactions at relatively low temperatures. Researchers have developed a wide range of reaction conditions to produce a variety of shapes, compositions, and structures with well-controlled sizes and low polydispersities. The shape can be controlled to produce confinement in one, two, or all three spatial dimensions, the latter defining a “quantum dot.” Combining two or more semiconductors within the various nanostructures produces additional optical and electronic degrees of freedom. These mixed compositional nanostructures have properties not accessible in bulk semiconductor systems. Further, researchers have fabricated novel nanoheterostructures, such as “dot-in-rods,” quantum wells, core/shell structures, giant-core/shell tetrapods where the core is one material and the arm is another, Janus structures that consist of spherical structures with well-defined internal heterostructures, nano-dumbbells, hollow-core structures, and many other novel and interesting structures. The structural variations are seemingly only limited by the creativity of the various researchers engaged in these endeavors.

36 MATERIALS SCIENCE↗

Creation of depth-confined, shallow nitrogen-vacancy centers in diamond with tunable density

Engineering shallow nitrogen-vacancy (NV) centers in diamond holds the key to unlocking new advances in nanoscale quantum sensing. We find that the creation of near-surface NVs through delta doping during diamond growth allows for tunable control over both NV depth confinement (with a twofold improvement relative to low-energy ion implantation) and NV density, ultimately resulting in highly sensitive single defects and ensembles with coherence limited by NV–NV interactions. Additionally, we demonstrate the utility of our shallow delta-doped NVs by imaging magnetism in few-layer CrSBr, a two-dimensional magnet. Here, we anticipate that the control afforded by near-surface delta doping will enable new developments in NV quantum sensing from nanoscale nuclear magnetic resonance to entanglement-enhanced metrology.

Chemical vapor deposition↗

Cuprate superconductors as viewed through a striped lens

Understanding the electron pairing in hole-doped cuprate superconductors has been a challenge, in particular because the “normal” state from which it evolves is unprecedented. Now, after three and a half decades of research, involving a wide range of experimental characterizations, it is possible to delineate a clear and consistent cuprate story. It starts with doping holes into a charge-transfer insulator, resulting in in-gap states. Furthermore, these states exhibit a pseudogap resulting from the competition between antiferromagnetic superexchange J between nearest-neighbor Cu atoms (a real-space interaction) and the kinetic energy of the doped holes, which, in the absence of interactions, would lead to extended Bloch-wave states whose occupancy is characterized in reciprocal space. To develop some degree of coherence on cooling, the spin and charge correlations must self-organize in a cooperative fashion.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Electron Tunneling and X-Ray Photoelectron Spectroscopy Studies of the Superconducting Properties of Nitrogen-Doped Niobium Resonator Cavities

Scanning tunneling microscopy and spectroscopy and X-ray photoelectron spectroscopy (XPS) have been used to investigate the differences between the surface electronic structures and chemical structure of typically prepared and N-doped Nb cutouts from superconducting radio frequency (SRF) cavities. The goal of this work is to get insights into the fundamental physics and materials mechanisms behind the striking decrease of the surface resistance with the radiofrequency magnetic field, which has been observed by many groups on N-doped Nb cavities. In particular, we address the effects of N-doping on the superconducting properties at the surface of SRF cavities. XPS measurements reveal a significantly more oxidized Nb 3d states on the N-doped Nb surfaces which is confirmed by tunneling spectroscopy measurements. Analysis of the tunneling spectra in the framework of a recent model (A. Gurevich and T. Kubo Phys. Rev. B 96, 184515 (2017)) shows that the N-doping greatly reduces local distribution of superconducting properties on the surface, causes a significant shrinkage of the metallic suboxide and changes the contact resistance between the metallic suboxide and the bulk niobium toward an optimum value, resulting in a lower surface resistance. Combination of these factors enables one to effectively tune the density of states at the surface and to reveal the decrease of the surface resistance with the radio frequency field which follows from the BCS theory. A slightly reduced average gap and a smaller coherence length, revealed by tunneling spectroscopy in the vortex cores, have been found in the N-doped Nb samples compared to typically prepared Nb samples, indicating a stronger impurity scattering caused by nitrogen doping in a moderately disordered material.

Lechner, Eric M.↗

Performance of High Stopping Power Bismuth-Loaded Plastic Scintillators for Radiation Portal Monitors

Plastic scintillators are widely used in radiation portal monitors because of their low cost and availability in large sizes. However, due to their low density and low effective atomic number (Z), they offer low intrinsic efficiency and little spectroscopic information. The addition of high-Z constituents to these plastics can greatly increase both their total stopping power and the amount of photoelectric absorption, leading to full-energy deposition and thus useful gamma spectra. Herein, we present the performance of the latest formulation of Bi-loaded plastic scintillators showing their useful spectroscopic information up to relatively high energy (~1 MeV) due to their high stopping power compared to the current commercially available plastics. These Bi-loaded plastics use 20 weight percent (wt%) Bi-pivalate (8 wt% elemental Bi) dissolved in polyvinyltoluene (PVT) matrix and conventional fast fluors (~10 ns decay time). These Bi-loaded plastics achieve up to approximately 6000 photons/MeV and have been produced in sizes up to 17 in 3 . The performance of these Bi-loaded plastics is also demonstrated in the existing portal monitor hardware (Rapiscan Model TSA Trainer 770) showing the possibility to provide improved sensitivity as a drop-in replacement with continued scale-up.

42 ENGINEERING↗

Magnetostrictive materials for enhanced sensors and electronic components

Magnetostriction is a property of magnetic materials that causes them to change their shape or dimensions when their magnetization changes. Low-cost, mechanically robust magnetostrictive sensors would be valuable for a wide range of applications addressing DOE's energy, environmental, and national security missions. Several examples include monitoring internal conditions of pipelines, enhancing implantable systems for the human body, and improving the electrical grid by providing real time sensors for detecting high impedance faults that may act as ignition sources for forest fires. Historically, magnetostrictive materials tended to be expensive and mechanically brittle, but recent developments in iron-based alloys, especially those that include dilute solutions of rare earth elements, have demonstrated useful magnetostriction values, mechanical robustness, and low costs. This project investigated addition of dilute cerium doping on the magnetostrictive properties of Fe-Ga and Fe-Al alloys. Advanced manufacturing techniques were applied to these materials to take advantage of rapid cooling of the alloy to stabilize desired phases and to make near net shape coupons. These coupons develop significant texturing, offering a route to target microstructures with exceptional performance.

36 MATERIALS SCIENCE↗

The effect of solid phase reactions on the ballistic properties of propellants

The combustion of NH4ClO4 composite propellants has been studied between 15 and 3000 psi. The emphasis in the program has been on determining the mechanisms by which the fuel components influence the burning rate of the composites. In order to have flexibility in the choice and concentration of the fuel component all combustion experiments were performed with pressed power strands. The fuels studied included those which affected the combustion mechanism of the composite primarily through their effect on: (1) the oxidizer decomposition mechanism and (2) the composite surface temperature. The combustion of pure and doped NH4ClO4 was studied using both pressed powder strands and pressed end burning motor grains. The experimental approach has been essentially a chemical one with emphasis on perturbing those reactions which occur on or immediately adjacent to the surface (zone of influence) of the composite.

Schmidt, W. G.↗

Healing of voids in the aluminum metallization of integrated circuit chips

The thermal stability of GaAs modulation-doped field effect transistors (MODFETs) is evaluated in order to identify failure mechanisms and validate the reliability of these devices. The transistors were exposed to thermal step-stress and characterized at ambient temperatures to indicate device reliability, especially that of the transistor ohmic contacts with and without molybdenum diffusion barriers. The devices without molybdenum exhibited important transconductance deterioration. MODFETs with molybdenum diffusion barriers were tolerant to temperatures above 300 C. This tolerance indicates that thermally activated failure mechanisms are slow at operational temperatures. Therefore, high-reliability MODFET-based circuits are possible.

Cuddihy, Edward F.↗

SiGe/Si heterojunction internal photoemission long-wavelength infrared detectors fabricated by molecular beam epitaxy

A new SiGe/Si heterojunction internal photoemission (HIP) long-wavelength infrared (LWIR) detector has been fabricated by molecular beam epitaxy (MBE). The detection mechanism of the SiGe/Si HIP detector is infrared absorption in the degenerately doped p+-SiGe layer followed by internal photoemission of photoexcited holes over a heterojunction barrier. By adjusting the Ge concentration in the SiGe layer, and, consequently, the valence band offset between SiGe and Si, the cutoff wavelength of SiGe HIP detectors can be extended into the LWIR (8-17-micron) regime. Detectors were fabricated by growing p+-SiGe layers using MBE on patterned p-type Si substrates. The SiGe layers were boron-doped, with concentrations ranging from 10 to the 19th/cu cm to 4 x 10 to the 20th/cu cm. Infrared absorption of 5-25 percent in a 30-nm-thick p+-SiGe layer was measured in the 3-20-micron range using a Fourier transform infrared spectrometer. Quantum efficiencies of 3-5 percent have been obtained from test devices in the 8-12-micron range.

Lin, True-Lon↗

Calcium-Magnesium-Aluminosilicate (CMAS) Reactions and Degradation Mechanisms of Advanced Environmental Barrier Coatings

The thermochemical reactions between calcium-magnesium-aluminosilicate- (CMAS-) based road sand and several advanced turbine engine environmental barrier coating (EBC) materials were studied. The phase stability, reaction kinetics and degradation mechanisms of rare earth (RE)-silicates Yb2SiO5, Y2Si2O7, and RE-oxide doped HfO2 and ZrO2 under the CMAS infiltration condition at 1500 C were investigated, and the microstructure and phase characteristics of CMAS-EBC specimens were examined using Scanning Electron Microscopy (SEM) and X-ray Diffraction (XRD). Experimental results showed that the CMAS dissolved RE-silicates to form crystalline, highly non-stoichiometric apatite phases, and in particular attacking the silicate grain boundaries. Cross-section images show that the CMAS reacted with specimens and deeply penetrated into the EBC grain boundaries and formed extensive low-melting eutectic phases, causing grain boundary recession with increasing testing time in the silicate materials. The preliminary results also showed that CMAS reactions also formed low melting grain boundary phases in the higher concentration RE-oxide doped HfO2 systems. The effect of the test temperature on CMAS reactions of the EBC materials will also be discussed. The faster diffusion exhibited by apatite and RE-doped oxide phases and the formation of extensive grain boundary low-melting phases may limit the CMAS resistance of some of the environmental barrier coatings at high temperatures.

Ahlborg, Nadia L.↗

High-efficiency transmission-mode diamond scintillator for quantitative characterization of X-ray beams

The luminance of a transmission mode X-ray scintillator diamond plate is dominated by induced defect centers having an excited state lifetime less than 10 msec, and in embodiments less than 1 msec, 100 usec, 10 used, 1 used, 100 nsec, or even 50 nsec, thereby providing enhanced X-ray luminance response and an X-ray flux dynamic range that is linear with X-ray flux on a log-log scale over at least three orders of magnitude. The diamond plate can be a single crystal having a dislocation density of less than 104 per square centimeter, and having surfaces that are ion milled instead of mechanically polished. The defect centers can be SiV centers induced by silicon doping during CVD diamond formation, and/or NV0 centers formed by nitrogen doping followed by applying electron beam irradiation of the diamond plate and annealing.

Antipov, Sergey↗