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At least 307 records · Page 17

Thin metal electrode for AMTEC

An electrode having higher power output is formed of a thin, porous film (less than 1 micrometer) applied to a beta-alumina solid electrolyte (BASE). The electrode includes an open grid, current collector such as a series of thin, parallel, grid lines applied to the thin film and a plurality of cross-members such as loop of metal wire surrounding the BASE tube. The loops are electrically connected by a bus wire. The overall impedance of the electrode considering both the contributions from the bulk BASE and the porous electrode BASE interface is low, about 0.5 OHM/cm.sup.2 and power densities of over 0.3 watt/cm.sup.2 for extended periods.

Williams, Roger M.↗

Failure Analysis of Electrical Pin Connectors

A study was initiated to determine the root cause of failure for circuit board electrical connection pins that failed during vibRatory testing. The circuit board is part of an unmanned space probe, and the vibratory testing was performed to ensure component survival of launch loading conditions. The results of this study show that the pins failed as a result of fatigue loading.

Newman, John A.↗

Update on Development of SiC Multi-Chip Power Modules

Progress has been made in a continuing effort to develop multi-chip power modules (SiC MCPMs). This effort at an earlier stage was reported in 'SiC Multi-Chip Power Modules as Power-System Building Blocks' (LEW-18008-1), NASA Tech Briefs, Vol. 31, No. 2 (February 2007), page 28. The following recapitulation of information from the cited prior article is prerequisite to a meaningful summary of the progress made since then: 1) SiC MCPMs are, more specifically, electronic power-supply modules containing multiple silicon carbide power integrated-circuit chips and silicon-on-insulator (SOI) control integrated-circuit chips. SiC MCPMs are being developed as building blocks of advanced expandable, reconfigurable, fault-tolerant power-supply systems. Exploiting the ability of SiC semiconductor devices to operate at temperatures, breakdown voltages, and current densities significantly greater than those of conventional Si devices, the designs of SiC MCPMs and of systems comprising multiple SiC MCPMs are expected to afford a greater degree of miniaturization through stacking of modules with reduced requirements for heat sinking; 2) The stacked SiC MCPMs in a given system can be electrically connected in series, parallel, or a series/parallel combination to increase the overall power-handling capability of the system. In addition to power connections, the modules have communication connections. The SOI controllers in the modules communicate with each other as nodes of a decentralized control network, in which no single controller exerts overall command of the system. Control functions effected via the network include synchronization of switching of power devices and rapid reconfiguration of power connections to enable the power system to continue to supply power to a load in the event of failure of one of the modules; and, 3) In addition to serving as building blocks of reliable power-supply systems, SiC MCPMs could be augmented with external control circuitry to make them perform additional power-handling functions as needed for specific applications. Because identical SiC MCPM building blocks could be utilized in such a variety of ways, the cost and difficulty of designing new, highly reliable power systems would be reduced considerably. This concludes the information from the cited prior article. The main activity since the previously reported stage of development was the design, fabrication, and testing a 120- VDC-to-28-VDC modular power-converter system composed of eight SiC MCPMs in a 4 (parallel)-by-2 (series) matrix configuration, with normally-off controllable power switches. The SiC MCPM power modules include closed-loop control subsystems and are capable of operating at high power density or high temperature. The system was tested under various configurations, load conditions, load-transient conditions, and failure-recovery conditions. Planned future work includes refinement of the demonstrated modular system concept and development of a new converter hardware topology that would enable sharing of currents without the need for communication among modules. Toward these ends, it is also planned to develop a new converter control algorithm that would provide for improved sharing of current and power under all conditions, and to implement advanced packaging concepts that would enable operation at higher power density.

Lostetter, Alexander↗

Making Complex Electrically Conductive Patterns on Cloth

A method for automated fabrication of flexible, electrically conductive patterns on cloth substrates has been demonstrated. Products developed using this method, or related prior methods, are instances of a technology known as 'e-textiles,' in which electrically conductive patterns ar formed in, and on, textiles. For many applications, including high-speed digital circuits, antennas, and radio frequency (RF) circuits, an e-textile method should be capable of providing high surface conductivity, tight tolerances for control of characteristic impedances, and geometrically complex conductive patterns. Unlike prior methods, the present method satisfies all three of these criteria. Typical patterns can include such circuit structures as RF transmission lines, antennas, filters, and other conductive patterns equivalent to those of conventional printed circuits. The present method overcomes the limitations of the prior methods for forming the equivalent of printed circuits on cloth. A typical fabrication process according to the present method involves selecting the appropriate conductive and non-conductive fabric layers to build the e-textile circuit. The present method uses commercially available woven conductive cloth with established surface conductivity specifications. Dielectric constant, loss tangent, and thickness are some of the parameters to be considered for the non-conductive fabric layers. The circuit design of the conductive woven fabric is secured onto a non-conductive fabric layer using sewing, embroidery, and/or adhesive means. The portion of the conductive fabric that is not part of the circuit is next cut from the desired circuit using an automated machine such as a printed-circuit-board milling machine or a laser cutting machine. Fiducials can be used to align the circuit and the cutting machine. Multilayer circuits can be built starting with the inner layer and using conductive thread to make electrical connections between layers.

Chu, Andrew↗

Number Codes Readable by Magnetic-Field-Response Recorders

A method of encoding and reading numbers incorporates some of the features of conventional optical bar coding and radio-frequency identification (RFID) tagging, but overcomes some of the disadvantages of both: (1) Unlike in conventional optical bar coding, numbers can be read without having a line of sight to a tag; and (2) the tag circuitry is simpler than the circuitry used in conventional RFID. The method is based largely on the principles described in Magnetic-Field-Response Measurement-Acquisition System (LAR-16908), NASA Tech Briefs, Vol. 30, No. 6 (June 2006) page 28. To recapitulate: A noncontact system includes a monitoring unit that acquires measurements from sensors at distances of the order of several meters. Each sensor is a passive radio-frequency (RF) resonant circuit in the form of one or more inductor(s) and capacitor(s). The monitoring unit a handheld unit denoted a magnetic field response recorder (MFRR) generates an RF magnetic field that excites oscillations in the resonant circuits resulting in the sensors responding with their own radiated magnetic field. The resonance frequency of each sensor is made to differ significantly from that of the other sensors to facilitate distinction among the responses of different sensors. The MFRR measures selected aspects of the sensor responses: in a typical application, the sensors are designed so that their resonance frequencies vary somewhat with the sensed physical quantities and, accordingly, the MFRR measures the resonance frequencies and variations thereof as indications of those quantities. In the present method, the resonance circuits are not used as sensors. Instead, the circuits are made to resonate at fixed frequencies that correspond to digits to be encoded. The number-encoding scheme is best explained by means of examples in which each resonant circuit consists of a spiral trace inductor electrically connected to a set of parallel-connected capacitors in the form of interdigitated electrode pairs (see figure). The inductor and capacitor(s) in each resonant circuit can be fabricated as a patterned thin metal film by means of established metal-deposition and -patterning techniques. The capacitance and, hence, the resonance frequency, depends on the number of interdigitated electrodes connected to the inductor. In a similar manner, sets of electrodes could be used.

Woodard, Stanley E.↗

Advanced Embedded Active Assemblies for Extreme Space Applications

This work describes the development and evaluation of advanced technologies for the integration of electronic die within membrane polymers. Specifically, investigators thinned silicon die, electrically connecting them with circuits on flexible liquid crystal polymer (LCP), using gold thermo-compression flip chip bonding, and embedding them within the material. Daisy chain LCP assemblies were thermal cycled from -135 to +85degC (Mars surface conditions for motor control electronics). The LCP assembly method was further utilized to embed an operational amplifier designed for operation within the Mars surface ambient. The embedded op-amp assembly was evaluated with respect to the influence of temperature on the operational characteristics of the device. Applications for this technology range from multifunctional, large area, flexible membrane structures to small-scale, flexible circuits that can be fit into tight spaces for flex to fit applications.

lead bonding↗

Recirculation of Laser Power in an Atomic Fountain

A new technique for laser-cooling atoms in a cesium atomic fountain frequency standard relies on recirculation of laser light through the atom-collection region of the fountain. The recirculation, accomplished by means of reflections from multiple fixed beam-splitter cubes, is such that each of two laser beams makes three passes. As described below, this recirculation scheme offers several advantages over prior designs, including simplification of the laser system, greater optical power throughput, fewer optical and electrical connections, and simplification of beam power balancing. A typical laser-cooled cesium fountain requires the use of six laser beams arranged as three orthogonal pairs of counter-propagating beams to decelerate the atoms and hold them in a three-dimensional optical trap in vacuum. Typically, these trapping/cooling beams are linearly polarized and are positioned and oriented so that (1) counter-propagating beams in each pair have opposite linear polarizations and (2) three of the six orthogonal beams have the sum of their propagation directions pointing up, while the other three have the sum of their propagation directions pointing down. In a typical prior design, two lasers are used - one to generate the three "up" beams, the other to generate the three "down" beams. For this purpose, the output of each laser is split three ways, then the resulting six beams are delivered to the vacuum system, independently of each other, via optical fibers. The present recirculating design also requires two lasers, but the beams are not split before delivery. Instead, only one "up" beam and one oppositely polarized "down" beam are delivered to the vacuum system, and each of these beams is sent through the collection region three times. The polarization of each beam on each pass through the collection region is set up to yield the same combination of polarization and propagation directions as described above. In comparison with the prior design, the present recirculating design utilizes the available laser light more efficiently, making it possible to trap more atoms at a given laser power or the same number of atoms at a lower laser power. The present design is also simpler in that it requires fewer optical fibers, fiber couplings, and collimators, and fewer photodiodes for monitoring beam powers. Additionally, the present design alleviates the difficulty of maintaining constant ratios among power levels of the beams within each "up" or "down" triplet.

Enzer, Daphna G.↗

Wide-temperature integrated operational amplifier

The present invention relates to a reference current circuit. The reference circuit comprises a low-level current bias circuit, a voltage proportional-to-absolute temperature generator for creating a proportional-to-absolute temperature voltage (VPTAT), and a MOSFET-based constant-IC regulator circuit. The MOSFET-based constant-IC regulator circuit includes a constant-IC input and constant-IC output. The constant-IC input is electrically connected with the VPTAT generator such that the voltage proportional-to-absolute temperature is the input into the constant-IC regulator circuit. Thus the constant-IC output maintains the constant-IC ratio across any temperature range.

Mojarradi, Mohammad↗

Microrectenna: A Terahertz Antenna and Rectifier on a Chip

A microrectenna that would operate at a frequency of 2.5 THz has been designed and partially fabricated. The circuit is intended to be a prototype of an extremely compact device that could be used to convert radio-beamed power to DC to drive microdevices (see Figure 1). The microrectenna (see Figure 2) circuit consists of an antenna, a diode rectifier and a DC output port. The antenna consists of a twin slot array in a conducting ground plane (denoted the antenna ground plane) over an enclosed quarter-wavelength-thick resonant cavity (denoted the reflecting ground plane). The circuit also contains a planar high-frequency low-parasitic Schottky-barrier diode, a low-impedance microstrip transmission line, capacitors, and contact beam leads. The entire 3-D circuit is fabricated monolithically from a single GaAs wafer. The resonant cavity renders the slot radiation pattern unidirectional with a half-power beam width of about 65. A unique metal mesh on the rear of the wafer forms the backplate for the cavity but allows the GaAs to be wet etched from the rear surface of the twin slot antennas and ground plane. The beam leads protrude past the edge of the chip and are used both to mount the microrectenna and to make the DC electrical connection with external circuitry. The antenna ground plane and the components on top of it are formed on a 2- m thick GaAs membrane that is grown in the initial wafer MBE (molecular beam epitaxy) process. The side walls of the antenna cavity are not metal coated and, hence, would cause some loss of power; however, the relatively high permittivity (epsilon=13) of the GaAs keeps the cavity modes well confined, without the usual surface-wave losses associated with thick dielectric substrates. The Schottky-barrier diode has the usual submicron dimensions associated with THz operation and is formed in a mesa process above the antenna ground plane. The diode is connected at the midpoint of a microstrip transmission line, which is formed on 1- m-thick SiO (permittivity of 5) laid down on top of the GaAs membrane. The twin slots are fed in phase by this structure. To prevent radio-frequency (RF) leakage past the slot antennas, low-loss capacitors are integrated into the microstrip transmission line at the edges of the slots. The DC current- carrying lines extend from the outer edges of the capacitors, widen approaching the edges of the chip, and continue past the edges of the chip to become the beam leads used in tacking down the devices. The structure provides a self-contained RF to DC converter that works in the THz range.

Siegel, Peter↗

Wirelessly Interrogated Position or Displacement Sensors

Two simple position or displacement sensors based on inductance-capacitance resonant circuits have been conceived. These sensors are both powered and interrogated without use of wires and without making contact with other objects. Instead, excitation and interrogation are accomplished by means of a magnetic-field-response recorder. Both of the present position or displacement sensors consist essentially of variable rectangular parallel-plate capacitors electrically connected in series with fixed inductors. Simple inductance-capacitance circuits of the type used in these sensors are inherently robust; their basic mode of operation does not depend on maintenance of specific environmental conditions. Hence, these sensors can be used under such harsh conditions as cryogenic temperatures, high pressures, and radioactivity.

Woodard, Stanley E.↗

Highly Efficient Multilayer Thermoelectric Devices

Multilayer thermoelectric devices now at the prototype stage of development exhibit a combination of desirable characteristics, including high figures of merit and high performance/cost ratios. These devices are capable of producing temperature differences of the order of 50 K in operation at or near room temperature. A solvent-free batch process for mass production of these state-of-the-art thermoelectric devices has also been developed. Like prior thermoelectric devices, the present ones have commercial potential mainly by virtue of their utility as means of controlled cooling (and/or, in some cases, heating) of sensors, integrated circuits, and temperature-critical components of scientific instruments. The advantages of thermoelectric devices for such uses include no need for circulating working fluids through or within the devices, generation of little if any noise, and high reliability. The disadvantages of prior thermoelectric devices include high power consumption and relatively low coefficients of performance. The present development program was undertaken in the hope of reducing the magnitudes of the aforementioned disadvantages and, especially, obtaining higher figures of merit for operation at and near room temperature. Accomplishments of the program thus far include development of an algorithm to estimate the heat extracted by, and the maximum temperature drop produced by, a thermoelectric device; solution of the problem of exchange of heat between a thermoelectric cooler and a water-cooled copper block; retrofitting of a vacuum chamber for depositing materials by sputtering; design of masks; and fabrication of multilayer thermoelectric devices of two different designs, denoted I and II. For both the I and II designs, the thicknesses of layers are of the order of nanometers. In devices of design I, nonconsecutive semiconductor layers are electrically connected in series. Devices of design II contain superlattices comprising alternating electron-acceptor (p)-doped and electron-donor (n)-doped, nanometer- thick semiconductor layers.

Boufelfel, Ali↗

Testing of Liquid Metal Components for Nuclear Surface Power Systems

The Early Flight Fission Test Facility (EFF-TF) was established by the Marshall Space Flight Center (MSFC) to provide a capability for performing hardware-directed activities to support multiple in-space nuclear reactor concepts by using a non-nuclear test methodology. This includes fabrication and testing at both the module/component level and near prototypic reactor configurations. The EFF-TF is currently supporting an effort to develop an affordable fission surface power (AFSP) system that could be deployed on the Lunar surface. The AFSP system is presently based on a pumped liquid metal-cooled (Sodium-Potassium eutectic, NaK-78) reactor design. This design was derived from the only fission system that the United States has deployed for space operation, the Systems for Nuclear Auxiliary Power (SNAP) 10A reactor, which was launched in 1965. Two prototypical components recently tested at MSFC were a pair of Stirling power conversion units that would be used in a reactor system to convert heat to electricity, and an annular linear induction pump (ALIP) that uses travelling electromagnetic fields to pump the liquid metal coolant through the reactor loop. First ever tests were conducted at MSFC to determine baseline performance of a pair of 1 kW Stirling convertors using NaK as the hot side working fluid. A special test rig was designed and constructed and testing was conducted inside a vacuum chamber at MSFC. This test rig delivered pumped NaK for the hot end temperature to the Stirlings and water as the working fluid on the cold end temperature. These test were conducted through a hot end temperature range between 400 to 550C in increments of 50 C and a cold end temperature range from 30 to 70 C in 20 C increments. Piston amplitudes were varied from 6 to 1 1mm in .5 mm increments. A maximum of 2240 Watts electric was produced at the design point of 550 hot end, 40 C cold end with a piston amplitude of 10.5mm. This power level was reached at a gross thermal efficiency of 28%. A baseline performance map was established for the pair of 1kW Stirling convertors. The performance data will then be used for design modification to the Stirling convertors. The ALIP tested at MSFC has no moving parts and no direct electrical connections to the liquid metal containing components. Pressure is developed by the interaction of the magnetic field produced by the stator and the current which flows as a result of the voltage induced in the liquid metal contained in the pump duct. Flow is controlled by variation of the voltage supplied to the pump windings. Under steady-state conditions, pump performance is measured for flow rates from 0.5-4.3 kg/s. The pressure rise developed by the pump to support these flow rates is roughly 5-65 kPa. The RMS input voltage (phase-to-phase voltage) ranges from 5-120 V, while the frequency can be varied arbitrarily up to 60 Hz. Performance is quantified at different loop temperature levels from 50 C up to 650 C, which is the peak operating temperature of the proposed AFSP reactor. The transient response of the pump is also evaluated to determine its behavior during startup and shut-down procedures.

Polzin, Kurt A.↗

Orbital Winch for High-Strength, Space-Survivable Tethers

An Orbital Winch mechanism enables high-load, multi-line tethers to be deployed and retracted without rotating the spool on which the tether is wound. To minimize damage to the tether and the wound package during retraction or deployment under load, it can incorporate a Tension Management Module that reduces the infeed tension by a factor of 15 through the use of a powered capstan with guide rollers. This design eliminates the need for rotating high-voltage electrical connections in tether systems that use propellantless electro-dynamic propulsion. It can also eliminate the need for rotating optical connections in applications where the tether contains optical fibers. This winch design was developed to deploy a 15-km-long, 15-kg high-strength Hoytether structure incorporating conductive wires as part of the MXER-1 demonstration mission concept. Two slewing rings that orbit around the tether spool, combined with translation of one of the slewing rings back and forth along the spool axis to traverse the wind point, enables the winch to wind the tether. Variations of the traverse motion of the slewing ring can accomplish level winds and conical pirn winds. By removing the non-traversing slewing ring, and adding an actuated guide arm, the winch can manage rapid, low-drag deployment of a tether off the end of a pirn-wound spool, followed by controlled retraction and rewinding, in a manner very similar to a spin-casting reel. The winch requires at least two motor driver controller units to coordinate the action of two stepper motors to accomplish tether deployment or retraction.

Hoyt, Robert↗

Inline Electrical Connector Mate/Demate Pliers

Military and aerospace industries use Mil-Spec type electrical connections on bulkhead panels that require inline access for mate and demate operations. These connectors are usually in tight proximity to other connectors, or recessed within panels. The pliers described here have been designed to work in such tight spaces, and consist of a mirrored set of parallel handles, two cross links, two return springs, and replaceable polyurethane-coated end effectors. The polyurethane eliminates metal-to-metal contact and provides a high-friction surface between the jaw and the connector. Operationally, the user would slide the pliers over the connector shell until the molded polyurethane lip makes contact with the connector shell edge. Then, by squeezing the handles, the end effector jaws grip the connector shell, allowing the connector to be easily disconnected by rotating the pliers. Mating the connector occurs by reversing the prescribed procedure, except the connector shell is placed into the jaws by hand. The molded lip within the jaw allows the user to apply additional force for difficult-to-mate connectors. Handle design has been carefully examined to maximize comfort, limit weight, incorporate tether locations, and improve ergonomics. They have been designed with an off-axis offset for wiring harness clearance, while placing the connector axis of rotation close to the user s axis of wrist rotation. This was done to eliminate fatigue during multiple connector panel servicing. To limit handle opening width, with user ergonomics in mind, the pliers were designed using a parallel jaw mechanism. A cross-link mechanism was used to complete this task, while ensuring smooth operation.

Yutko, Brian↗

Advanced Flip Chips in Extreme Temperature Environments

The use of underfill materials is necessary with flip-chip interconnect technology to redistribute stresses due to mismatching coefficients of thermal expansion (CTEs) between dissimilar materials in the overall assembly. Underfills are formulated using organic polymers and possibly inorganic filler materials. There are a few ways to apply the underfills with flip-chip technology. Traditional capillary-flow underfill materials now possess high flow speed and reduced time to cure, but they still require additional processing steps beyond the typical surface-mount technology (SMT) assembly process. Studies were conducted using underfills in a temperature range of -190 to 85 C, which resulted in an increase of reliability by one to two orders of magnitude. Thermal shock of the flip-chip test articles was designed to induce failures at the interconnect sites (-40 to 100 C). The study on the reliability of flip chips using underfills in the extreme temperature region is of significant value for space applications. This technology is considered as an enabling technology for future space missions. Flip-chip interconnect technology is an advanced electrical interconnection approach where the silicon die or chip is electrically connected, face down, to the substrate by reflowing solder bumps on area-array metallized terminals on the die to matching footprints of solder-wettable pads on the chosen substrate. This advanced flip-chip interconnect technology will significantly improve the performance of high-speed systems, productivity enhancement over manual wire bonding, self-alignment during die joining, low lead inductances, and reduced need for attachment of precious metals. The use of commercially developed no-flow fluxing underfills provides a means of reducing the processing steps employed in the traditional capillary flow methods to enhance SMT compatibility. Reliability of flip chips may be significantly increased by matching/tailoring the CTEs of the substrate material and the silicon die or chip, and also the underfill materials. Advanced packaging interconnects technology such as flip-chip interconnect test boards have been subjected to various extreme temperature ranges that cover military specifications and extreme Mars and asteroid environments. The eventual goal of each process step and the entire process is to produce components with 100 percent interconnect and satisfy the reliability requirements. Underfill materials, in general, may possibly meet demanding end use requirements such as low warpage, low stress, fine pitch, high reliability, and high adhesion.

Ramesham, Rajeshuni↗

KSC Tech Transfer News, Volume 2, No. 2

This issue contains articles about: (1) the Innovative Partnerships Program (IPP) and the manager of the program, Alexis Hongamen, (2) New Technology Report (NTR) on a Monte Carlo Simulation to Estimate the Likelihood of Direct Lightning Strikes, (3) Kennedy Space Center's Applied Physics Lab, (4) a virtual ruler that is used for many applications, (5) a portable device that finds low-level leaks, (6) a sun-shield, that supports in-space cryogenic propellant storage, (7) lunar dust modeling software, (8) space based monitoring of radiation damage to DNA, (9) the use of light-emitting diode (LED) arrays vegetable production system, (10) Dust Tolerant Intelligent Electrical Connection Systems, (11) Ice Detection Camera System Upgrade, (12) Repair Techniques for Composite Structures, (13) Cryogenic Orbital Testbed, and (14) copyright protection.

Makufka, David↗

Photodetector Arrays for Multicolor Visible/Infrared Imaging

Monolithic focal-plane arrays of photodetectors capable of imaging the same scenes simultaneously in multiple wavelength bands in the visible and infrared spectral regions have been proposed. In prior visible/infrared imaging systems, it has been standard practice to use separate optical trains to form images in visible and infrared wavelength bands on separate visibleand infrared-photodetector arrays. Because the proposal would enable the detection of images in multiple wavelength bands on the same focal plane, the proposal would make it unnecessary to use multiple optical trains. Hence, multispectral imaging systems could be made more compact and the difficulties of aligning multiple optical trains would be eliminated. Each pixel in an array according to the proposal would contain stacks of several photodetectors. The proposal is a logical extension of prior concepts of arrays of stacked photodetectors for imaging in two or three wavelength bands. For example, such an array was described in Three-Color Focal-Plane Array of Infrared QWIPs (NPO-20683), NASA Tech Briefs, Vol. 24, No. 5 (May 2000), page 26a. In one proposed design, (see figure), each pixel would be divided into four subpixels, one being dedicated to a visible- and-near-infrared (V) band, one to a combination of the V band and a verylong- wavelength infrared (VLWIR) band, one to a combination of the V band and a long-wavelength infrared (LWIR) band, and one to a combination of the V band and a medium-wavelength infrared (MWIR) band. For this purpose, each subpixel would include a GaAs-based positive/intrinsic/negative (PIN) photodiode for detection in the V band stacked with three quantum-well infrared photodetectors (QWIPs), each optimized for one of the aforementioned infrared bands. The stacks of photodetectors in all the subpixels would be identical except for the electrical connections, which would be configured to activate the various wavelengthband combinations.

Gunapala, Sarath↗

CdZnTe Image Detectors for Hard-X-Ray Telescopes

Arrays of CdZnTe photodetectors and associated electronic circuitry have been built and tested in a continuing effort to develop focal-plane image sensor systems for hard-x-ray telescopes. Each array contains 24 by 44 pixels at a pitch of 498 m. The detector designs are optimized to obtain low power demand with high spectral resolution in the photon- energy range of 5 to 100 keV. More precisely, each detector array is a hybrid of a CdZnTe photodetector array and an application-specific integrated circuit (ASIC) containing an array of amplifiers in the same pixel pattern as that of the detectors. The array is fabricated on a single crystal of CdZnTe having dimensions of 23.6 by 12.9 by 2 mm. The detector-array cathode is a monolithic platinum contact. On the anode plane, the contact metal is patterned into the aforementioned pixel array, surrounded by a guard ring that is 1 mm wide on three sides and is 0.1 mm wide on the fourth side so that two such detector arrays can be placed side-by-side to form a roughly square sensor area with minimal dead area between them. Figure 1 shows two anode patterns. One pattern features larger pixel anode contacts, with a 30-m gap between them. The other pattern features smaller pixel anode contacts plus a contact for a shaping electrode in the form of a grid that separates all the pixels. In operation, the grid is held at a potential intermediate between the cathode and anode potentials to steer electric charges toward the anode in order to reduce the loss of charges in the inter-anode gaps. The CdZnTe photodetector array is mechanically and electrically connected to the ASIC (see Figure 2), either by use of indium bump bonds or by use of conductive epoxy bumps on the CdZnTe array joined to gold bumps on the ASIC. Hence, the output of each pixel detector is fed to its own amplifier chain.

Chen, C. M. Hubert↗