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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 307 records · Page 17
All sourcesNASA NTRSDOE OSTI
NASA NTRS1991

Silicon carbide, a semiconductor for space power electronics

After many years of promise as a high temperature semiconductor, silicon carbide (SiC) is finally emerging as a useful electronic material. Recent significant progress that has led to this emergence has been in the area of crystal growth and device fabrication technology. High quality of single-crystal SiC wafers, up to 25 mm in diameter, can now be produced routinely from boules grown by a high temperature (2700 K) sublimation process. Device fabrication processes, including chemical vapor deposition (CVD), in situ doping during CVD, reactive ion etching, oxidation, metallization, etc. have been used to fabricate p-n junction diodes and MOSFETs. The diode was operated to 870 K and the MOSFET to 770 K.

Powell, J. A.↗
NASA NTRS2009

Empirical Constraints on Proton and Electron Heating in the Fast Solar Wind

This paper presents analyses of measured proton and electron temperatures in the high-speed solar wind that are used to calculate the separate rates of heat deposition for protons and electrons. It was found that the protons receive about 60% of the total plasma heating in the inner heliosphere, and that this fraction increases to approximately 80% by the orbit of Jupiter. The empirically derived partitioning of heat between protons and electrons is in rough agreement with theoretical predictions from a model of linear Vlasov wave damping. For a modeled power spectrum consisting only of Alfvenic fluctuations, the best agreement was found for a distribution of wavenumber vectors that evolves toward isotropy as distance increases.

Cranmer, Steven R.↗
DOE OSTI2024

Optimal control of the electron temperature profile in DIII-D using machine learning surrogate models

The viability of the tokamak as a potential fusion reactor depends on the ability to keep the plasma in a stable regime while achieving temperatures, densities, and confinement times that are as high as possible. Tokamak scenario development attempts to find plasma regimes that achieve all of these conditions and are accessible with a given set of hardware constraints. This requires the ability to control plasma properties such as the normalized beta, the internal inductance, safety factor, rotation, etc. One property that has received less attention than some of the others, but is no less critical to achieving high performance, is the electron temperature (T e ) profile. In this work, Linear Quadratic Integral (LQI) control is used to develop a controller for the electron temperature profile in DIII-D. The controller is based on a linearized model derived from the transport equation that describes the evolution of the electron temperature, and includes contributions from the neural network surrogate models NubeamNet and MMMnet. Furthermore, the controller is tested in simulation using COTSIM, and is proven capable of tracking a target T e profile.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
NASA NTRS2003

Packaging Technology Designed, Fabricated, and Assembled for High-Temperature SiC Microsystems

A series of ceramic substrates and thick-film metalization-based prototype microsystem packages designed for silicon carbide (SiC) high-temperature microsystems have been developed for operation in 500 C harsh environments. These prototype packages were designed, fabricated, and assembled at the NASA Glenn Research Center. Both the electrical interconnection system and the die-attach scheme for this packaging system have been tested extensively at high temperatures. Printed circuit boards used to interconnect these chip-level packages and passive components also are being fabricated and tested. NASA space and aeronautical missions need harsh-environment, especially high-temperature, operable microsystems for probing the inner solar planets and for in situ monitoring and control of next-generation aeronautical engines. Various SiC high-temperature-operable microelectromechanical system (MEMS) sensors, actuators, and electronics have been demonstrated at temperatures as high as 600 C, but most of these devices were demonstrated only in the laboratory environment partially because systematic packaging technology for supporting these devices at temperatures of 500 C and beyond was not available. Thus, the development of a systematic high-temperature packaging technology is essential for both in situ testing and the commercialization of high-temperature SiC MEMS. Researchers at Glenn developed new prototype packages for high-temperature microsystems using ceramic substrates (aluminum nitride and 96- and 90-wt% aluminum oxides) and gold (Au) thick-film metalization. Packaging components, which include a thick-film metalization-based wirebond interconnection system and a low-electrical-resistance SiC die-attachment scheme, have been tested at temperatures up to 500 C. The interconnection system composed of Au thick-film printed wire and 1-mil Au wire bond was tested in 500 C oxidizing air with and without 50-mA direct current for over 5000 hr. The Au thick-film metalization-based wirebond electrical interconnection system was also tested in an extremely dynamic thermal environment to assess thermal reliability. The I-V curve1 of a SiC high-temperature diode was measured in oxidizing air at 500 C for 1000 hr to electrically test the Au thick-film material-based die-attach assembly.

Chen, Liang-Yu↗
NASA NTRS1989

Collisional-radiative non-equilibrium in high-temperature helium

A stationary, nonlinear collisional-radiative model for determination of production of electrons, excited atoms and atomic line intensities for high-temperature helium is presented. The populations of several atomic levels and the intensities of spectral and continuum lines are calculated in a wide range of conditions (Te = 12,000-22,000 K, Nt = 10 to the 12 - 10 to the 20th per cu cm. Transport of radiation is included by coupling the rate equations for production of the electrons and excited atoms with the radiation escape factors which are not constant but depend on plasma conditions.

Kunc, J. A.↗
NASA NTRS1995

Theoretical study of cathode surfaces and high-temperature superconductors

Calculations are presented for the work functions of BaO on W, Os, Pt, and alloys of Re-W, Os-W, and Ir-W that are in excellent agreement with experiment. The observed emission enhancement for alloy relative to tungsten dispenser cathodes is attributed to properties of the substrate crystal structure and explained by the smaller depolarization of the surface dipole on hexagonal as compared to cubic substrates. For Ba and BaO on W(100), the geometry of the adsorbates has been determined by a comparison of inverse photoemission spectra with calculated densities of unoccupied states based on the fully relativistic embedded cluster approach. Results are also discussed for models of scandate cathodes and the electronic structure of oxygen on W(100) at room and elevated temperatures. A detailed comparison is made for the surface electronic structure of the high-temperature superconductor YBa2Cu3O7 as obtained with non-, quasi-, and fully relativistic cluster calculations.

Mueller, Wolfgang↗
NASA NTRS2013

James Webb Space Telescope Mid Infra-Red Instrument Pulse-Tube Cryocooler Electronics

The latest generation of long life, space pulse-tube cryocoolers require electronics capable of controlling self-induced vibration down to a fraction of a newton and coldhead temperature with high accuracy down to a few kelvin. Other functions include engineering diagnostics, heater and valve control, telemetry and safety protection of the cryocooler subsystem against extreme environments and operational anomalies. The electronics are designed to survive the thermal, vibration, shock and radiation environment of launch and orbit, while providing a design life in excess of 10 years on-orbit. A number of our current generation high reliability radiation-hardened electronics units are in various stages of integration on several space flight payloads. This paper describes the features and performance of our latest flight electronics designed for the pulse-tube cryocooler that is the pre-cooler for a closed cycle Joule-Thomson cooler providing 6K cooling for the James Webb Space Telescope (JWST) Mid Infra-Red Instrument (MIRI). The electronics is capable of highly accurate temperature control over the temperature range from 4K to 15K. Self-induced vibration is controlled to low levels on all harmonics up to the 16th. A unique active power filter controls peak-to-peak reflected ripple current on the primary power bus to a very low level. The 9 kg unit is capable of delivering 360W continuous power to NGAS's 3-stage pulse-tube High-Capacity Cryocooler (HCC).

thermometry↗
NASA NTRS1988

Non-equilibrium of high-temperature nitrogen and oxygen

A stationary colloidal-radiative model for determination of production of electrons, excited atoms, and spectral line intensities in high-temperature atomic N and O is presented. The populations of several atomic levels and partition functions, and the intensities of several lines, are calculated in a wide range of conditions. Transport of radiation is included by coupling the rate equations for production of the electrons and excited atoms with the Holstein escape factors which are not constant, but depend on plasma conditions.

Kunc, J. A.↗
DOE OSTI2026

Topochemical Oxidation of Ruddlesden–Popper Nickelates Reveals Distinct Structural Family: Oxygen-Intercalated Layered Perovskites

Layered perovskites─including the Dion–Jacobson, Ruddlesden–Popper, and Aurivillius families─exhibit a wide range of correlated electron phenomena, from high-temperature superconductivity to multiferroicity. Here, in this study, we report a new family of layered perovskites realized through topochemical oxidation of La n+1 Ni n O 3n+1+δ (n = 1–4) Ruddlesden–Popper nickelate thin films. Postgrowth ozone annealing induces a substantial c-axis expansion─17.8% for La 2 NiO 4+δ (n = 1)─that monotonically decreases with increasing n. Surface synchrotron X-ray diffraction and coherent Bragg rod analysis (COBRA) reveal that this structural expansion arises from the intercalation of approximately δ ≈ 0.7–1.0 oxygen atoms into interstitial sites within the rock salt spacer layers, far exceeding the previous record of δ ≈ 0.3 for any Ruddlesden–Popper oxide. These oxygen-intercalated phases form a new class of layered perovskites with a spacer layer composition intermediate between the Ruddlesden–Popper and Aurivillius phases. Furthermore, oxygen intercalation induces metallicity, enhances nickel–oxygen hybridization, and suppresses oxygen octahedral rotations, a feature associated with high-temperature superconductivity in Ruddlesden–Popper nickelates. Our work establishes topochemical oxidation as a powerful approach to accessing highly oxidized, metastable phases across a broad range of layered oxide systems, offering new platforms to engineer electronic properties via intercalation chemistry.

Ferenc Segedin, Dan [Harvard Univ., Cambridge, MA ↗
DOE OSTI2024

Tokamak divertor plasma emulation with machine learning

Abstract Future tokamak devices that aim to create conditions relevant to power plant operations must consider strategies for mitigating damage to plasma facing components in the divertor. One of the goals of MAST-U tokamak operations is to inform these considerations by researching advanced divertor configurations that aid stable plasma detachment. Machine design, scenario planning and detachment control would all greatly benefit from tools that enable rapid calculation of scenario-relevant quantities given some input parameters. This paper presents a method for generating large, simulated scrape-off layer data sets, which was applied to generate a data set of steady-state Hermes-3 simulations of the MAST-U tokamak. A machine learning model was constructed using a Bayesian approach to hyperparameter optimisation to predict diagnosable output quantities given control-relevant input features. The resulting best-performing model, which is based on a feedforward neural network, achieves high accuracy when predicting electron temperature at the divertor target and carbon impurity radiation front position and runs in around 1 ms in inference mode. Techniques for interpreting the predictions made by the model were applied, and a high-resolution parameter scan of upstream conditions was performed to demonstrate the utility of rapidly generating accurate predictions using the emulator. This work represents a step forward in the design of machine learning-driven emulators of tokamak exhaust simulation codes in operational modes relevant to divertor detachment control and plasma scenario design.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2026

Unified Description of Cuprate Superconductors by Fractionalized Electrons Emerging from Integrated Analyses of Photoemission Spectra and Quasiparticle Interference

Electronic structure of high-temperature superconducting cuprates is studied by analyzing experimental data independently obtained from two complementary spectroscopies: one, quasiparticle interference (QPI) measured by scanning-tunneling microscopy, and the other, angle-resolved photoemission spectroscopy (ARPES). We combine these two sets of data in a unified theoretical analysis. Through explicit calculations of experimentally measurable quantities, we show that a simple two-component fermion model (TCFM) representing electron fractionalization succeeds in reproducing various detailed features of these experimental data: ARPES and QPI data are concomitantly reproduced by the TCFM in full energy and momentum spaces. The measured QPI pattern reveals a signature characteristic of the TCFM, distinct from the conventional single-component prediction, supporting the validity of the electron fractionalization in the cuprates. The integrated analysis also solves the puzzles of ARPES and QPI data that are seemingly inconsistent with each other. The overall success of the TCFM offers a comprehensive understanding of the electronic structure of the cuprates, in particular, the unoccupied side of the spectra, of which momentum-resolved structure has long been unexplored experimentally. We further predict that a characteristic QPI pattern should appear in the unoccupied high-energy part if the fractionalization is at work. We propose that integrated-spectroscopy analyses offer a promising way to explore challenging issues of strongly correlated electron systems.

Sakai, Shiro [Sophia University; RIKEN Center for ↗
NASA NTRS1989

The Venus precursor - An environmental effect on the Pioneer Venus spacecraft

Data obtained by the Pioneer Venus Orbiter's retarding potential analyzer during two orbits with periapsis in the subpolar region of Venus are presented. Two electron populations are observed: a low-temperature population that is interpreted to be an electron sheath population trapped in the positive spacecraft potential well, and a high-temperature population representing the ambient solar wind electron population. The sheath population's increase and decrease by a factor of 5, as the spacecraft approaches and recedes from a position near periapsis (independently of the bow shock's position relative to the spacecraft), is interpreted as being due to an increase and decrease in the density of cold electrons trapped in the spacecraft potential well.

Knudsen, William C.↗
NASA NTRS1967

The electron temperature of H II regions.

Electron temperature of H II region related to high temperature main sequence stars determined as function of electron density and radiation dilution factor

STELLAR RADIATION↗
DOE OSTI2024

Feasibility and performance of the staged Z-pinch: A one-dimensional study with FLASH and MACH2

Z-pinch platforms constitute a promising pathway to fusion energy research. Here, we present a one-dimensional numerical study of the staged Z-pinch (SZP) concept using the FLASH and MACH2 codes. We discuss the verification of the codes using two analytical benchmarks that include Z-pinch-relevant physics, building confidence on the codes' ability to model such experiments. Then, FLASH is used to simulate two different SZP configurations: a xenon gas-puff liner (SZP1*) and a silver solid liner (SZP2). The SZP2 results are compared against previously published MACH2 results, and a new code-to-code comparison on SZP1* is presented. Using an ideal equation of state and analytical transport coefficients, FLASH yields a fuel convergence ratio (CR) of approximately 39 and a mass-averaged fuel ion temperature slightly below 1 keV for the SZP2 scheme, significantly lower than the full-physics MACH2 prediction. For the new SZP1* configuration, full-physics FLASH simulations furnish large and inherently unstable CRs (>300) but achieve fuel ion temperatures of many kilo-electron volts. While MACH2 also predicts high temperatures, the fuel stagnates at a smaller CR. The integrated code-to-code comparison reveals how magnetic insulation, heat conduction, and radiation transport affect platform performance and the feasibility of the SZP concept.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2024

Temperature-induced degradation of GaN HEMT: An in situ heating study

High-power electronics, such as GaN high electron mobility transistors (HEMTs), are expected to perform reliably in high-temperature conditions. This study aims to gain an understanding of the microscopic origin of both material and device vulnerabilities to high temperatures by real-time monitoring of the onset of structural degradation under varying temperature conditions. This is achieved by operating GaN HEMT devices in situ inside a transmission electron microscope (TEM). Electron-transparent specimens are prepared from a bulk device and heated up to 800 °C. High-resolution TEM (HRTEM), scanning TEM (STEM), energy-dispersive x-ray spectroscopy (EDS), and geometric phase analysis (GPA) are performed to evaluate crystal quality, material diffusion, and strain propagation in the sample before and after heating. Gate contact area reduction is visible from 470 °C accompanied by Ni/Au intermixing near the gate/AlGaN interface. Elevated temperatures induce significant out-of-plane lattice expansion at the SiNx/GaN/AlGaN interface, as revealed by geometry-phase GPA strain maps, while in-plane strains remain relatively consistent. Exposure to temperatures exceeding 500 °C leads to almost two orders of magnitude increase in leakage current in bulk devices in this study, which complements the results from our TEM experiment. The findings of this study offer real-time visual insights into identifying the initial location of degradation and highlight the impact of temperature on the bulk device’s structure, electrical properties, and material degradation.

36 MATERIALS SCIENCE↗