THEORETICAL AND EXPERIMENTAL ANALYSIS OF SEVERAL TYPICAL JUNCTIONS IN SPACE VEHICLE SHELL STRUCTURES. PRELIMINARY DRAFT
Analysis of several typical junctions in space vehicle shell structures
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Analysis of several typical junctions in space vehicle shell structures
Observation of nuclear pulse height increases in silicon p-n junction radiation detectors
Segmentation of transistor bonding stripes and the inherent inductance of individual leads provides ballast for even current distribution across the junction of a high-frequency transistor.
LF noise generation in junction field effect transistors due to charge fluctuations
Vapor grown silicon dioxide layer protects base-collector junction in silicon planar transistors during the emitter diffusion process. This oxide fills in any imperfections that exist in the thermally grown oxide layer and is of greater thickness than that layer. This process is used to deposit protective silicon dioxide coatings on optical surfaces.
In a multitemperature sampling system where the reference thermocouples are a distance from the test thermocouples, an intermediate thermal junction block is placed between the sets of thermocouples permitting switching between a single reference and the test thermocouples. This reduces the amount of cabling, reference thermocouples, and cost of the sampling system.
Cable run circuit with switching junction connectors at strategic locations enables television cameras to be plugged in with minimum effort wherever needed. Crimp-type contacts for mating connections reduce installation time and require a lesser level of technician skill than do soldered and potted connections.
Flight reentry experiments define the total heating on a large blunt-nosed body by means of imbedded thermocouples. The thermocouples, installed in a beryllium layered forebody, were designed to provide minimum feasible disturbance of local heat flow with accurate depth control of the thermocouple junction locations.
Geodetic junction of France and North Africa determined by synchronized photographs taken from Echo I satellite
Modified series model for abrupt-junction varactor diode used as harmonic frequency doubler
Tetrad and dyadic formulations of junction conditions in general relativity obtained and used to solve Einstein field equations
Proton irradiation effects in MOS and junction field effect transistors and integrated circuits
Current-voltage characteristics of tunneling p-n junctions in semiconductors
Limiting factor analysis for junction circulator design
Proton irradiation effects in MOS and junction field-effect transistors and integrated circuits
Microscopic calculation of barrier free energy of Josephson junctions, discussing validity of tunneling Hamiltonian method
Junction depths measurement in semiconductor devices by drilling with rotating sphere
Junction conditions across internal boundaries for Ricci rotation coefficients and Riemann tensor components in arbitrary reference tetrad frame