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At least 307 records · Page 17

Radiation Effects on Advanced Flash Memories

Flash memories have evolved very rapidly in recent ears. New design techniques such as multilevel storage have been proposed to increase storage density, and are now available commercially. Threshold voltage distributions for single- and three-level technologies are compared. In order to implement this technology special circuitry must be added to allow the amount of charge stored in the floating gate to be controlled within narrow limits during the writing and also to detect the different amounts of charge during reading.

Nguyen, D. N.↗

Ferroelectric capacitors and field-effect transistors as in-memory computing elements for machine learning workloads

Abstract This study discusses the feasibility of Ferroelectric Capacitors (FeCaps) and Ferroelectric Field-Effect Transistors (FeFETs) as In-Memory Computing (IMC) elements to accelerate machine learning (ML) workloads. We conducted an exploration of device fabrication and proposed system-algorithm co-design to boost performance. A novel FeCap device, incorporating an interfacial layer (IL) and$$\text {Hf}_{0.5}\text {Zr}_{0.5}\text {O}_2$$ Hf 0.5 Zr 0.5 O 2 (HZO), ensures a reduction in operating voltage and enhances HZO scaling while being compatible with CMOS circuits. The IL also enriches ferroelectricity and retention properties. When integrated into crossbar arrays, FeCaps and FeFETs demonstrate their effectiveness as IMC components, eliminating sneak paths and enabling selector-less operation, leading to notable improvements in energy efficiency and area utilization. However, it is worth noting that limited capacitance ratios in FeCaps introduced errors in multiply-and-accumulate (MAC) computations. The proposed co-design approach helps in mitigating these errors and achieves high accuracy in classifying the CIFAR-10 dataset, elevating it from a baseline of 10% to 81.7%. FeFETs in crossbars, with a higher on-off ratio, outperform FeCaps, and our proposed charge-based sensing scheme achieved at least an order of magnitude reduction in power consumption, compared to prevalent current-based methods.

Science & Technology - Other Topics↗

Effect of Radiation and Endurance on Pulsed Programming of Commercial NAND Flash Memory

Independent and coupled effects of radiation and endurance on commercial NAND Flash memory is studied using pulsed programming enabled by interrupting the programming command at the chip-level. The effects of total ionization dose (TID) and endurance stress increase and decrease, respectively, the number of pulses needed to program an entire page. The coupled effect of endurance stress and TID appear to exhibit linear correlation. A neutral electron/ hole trap model is evaluated and correlates well with our results.

Narasimham, Avyaya Jayanthi↗

Radiation Issues and Applications of Floating Gate Memories

The radiation effects that affect various systems that comprise floating gate memories are presented. The wear-out degradation results of unirradiated flash memories are compared to irradiated flash memories. The procedure analyzes the failure to write and erase caused by wear-out and degradation of internal charge pump circuits. A method is described for characterizing the radiation effects of the floating gate itself. The rate dependence, stopping power dependence, SEU susceptibility and applications of floating gate in radiation environment are presented. The ramifications for dosimetry and cell failure are discussed as well as for the long term use aspects of non-volatile memories.

Scheick, L. Z.↗

Effects of proton irradiation on the microstructure and shape recovery characteristics of a NiTi alloy

Highlights: • The complex multilayer structure can be induced by irradiation. • Phase constitution with increased fluence evolved as follows: B19’ → (B19’ + B2 + Ti{sub 2}Ni) → (B2 + Ti{sub 2}Ni + TiH{sub 2}). • The transformation temperature decreases remarkablly with the increasing of irradiation fluence. • The strain recovery characteristics deteriorated significantly with the irradiation fluence increasing. - Abstract: Herein, we investigate the effects of proton irradiation on the structure and shape recovery characteristics of a NiTi alloy and provide a mechanistic explanation of the observed phenomena. Detailed analysis revealed that bombardment with 3 MeV protons induced the formation of a complex multilayer structure comprising TiH{sub 2}, Ti{sub 2}Ni, austenite and austenite-martensite layers along the irradiation direction with increasing distance and the origin of the above structure was shown to be closely related to the preferential sputtering effect and irradiation-induced segregation. Finally, the shape recovery characteristics significantly deteriorated with increasing irradiation fluence, since the multilayer structure hindered the martensitic transformation.

36 MATERIALS SCIENCE↗

Video-task assessment of learning and memory in Macaques (Macaca mulatta) - Effects of stimulus movement on performance

Effects of stimulus movement on learning, transfer, matching, and short-term memory performance were assessed with 2 monkeys using a video-task paradigm in which the animals responded to computer-generated images by manipulating a joystick. Performance on tests of learning set, transfer index, matching to sample, and delayed matching to sample in the video-task paradigm was comparable to that obtained in previous investigations using the Wisconsin General Testing Apparatus. Additionally, learning, transfer, and matching were reliably and significantly better when the stimuli or discriminanda moved than when the stimuli were stationary. External manipulations such as stimulus movement may increase attention to the demands of a task, which in turn should increase the efficiency of learning. These findings have implications for the investigation of learning in other populations, as well as for the application of the video-task paradigm to comparative study.

Washburn, David A.↗

Flexible and Effective Object Tiering for Heterogeneous Memory Systems

Computing platforms that package multiple types of memory, each with their own performance characteristics, are quickly becoming mainstream. To operate efficiently, heterogeneous memory architectures require new data management solutions that are able to match the needs of each application with an appropriate type of memory. As the primary generators of memory usage, applications create a great deal of information that can be useful for guiding memory tiering, but the community still lacks tools to collect, organize, and leverage this information effectively. To address this gap, this work introduces a novel software framework that collects and analyzes object-level information to guide memory tiering. Using this framework, this study evaluates and compares the impact of a variety of data tiering choices, including how the system prioritizes objects for faster memory as well as the frequency and timing of migration events. The results, collected on a modern Intel platform with conventional DRAM as well as non-volatile RAM, show that guiding data tiering with object-level information can enable significant performance and efficiency benefits compared to standard hardware- and software-directed data tiering strategies.

Kammerdiener, Brandon↗

Flexible and Effective Object Tiering for Heterogeneous Memory Systems

Computing platforms that package multiple types of memory, each with their own performance characteristics, are quickly becoming mainstream. To operate efficiently, heterogeneous memory architectures require new data management solutions that are able to match the needs of each application with an appropriate type of memory. As the primary generators of memory usage, applications create a great deal of information that can be useful for guiding memory management, but the community still lacks tools to collect, organize, and leverage this information effectively. To address this gap, this work introduces a novel software framework that collects and analyzes object-level information to guide memory tiering. The framework includes tools to monitor the capacity and usage of individual data objects, routines that aggregate and convert this information into tier recommendations for the host platform, and mechanisms to enforce these recommendations according to user-selected policies. Moreover, the developed tools and techniques are fully automatic, work on standard Linux systems, and do not require modification or recompilation of existing software. Using this framework, this study evaluates and compares the impact of a variety of design choices for memory tiering, including different policies for prioritizing objects for the fast memory tier as well as the frequency and timing of migration events. In conclusion, the results, collected on a modern Intel platform with conventional DDR4 SDRAM as well as Intel Optane NVRAM, show that guiding data tiering with object-level information can enable significant performance and efficiency benefits compared with standard hardware- and software-directed data-tiering strategies for a diverse set of memory-intensive workloads.

97 MATHEMATICS AND COMPUTING↗

Suppression of the ferromagnetic order in the Heusler alloy Ni{sub 50}Mn{sub 35}In{sub 15} by hydrostatic pressure

We report on the effect of hydrostatic pressure on the magnetic and structural properties of the shape-memory Heusler alloy Ni{sub 50}Mn{sub 35}In{sub 15}. Magnetization and x-ray diffraction experiments were performed at hydrostatic pressures up to 5 GPa using diamond anvil cells. Pressure stabilizes the martensitic phase, shifting the martensitic transition to higher temperatures, and suppresses the ferromagnetic austenitic phase. Above 3 GPa, where the martensitic-transition temperature approaches the Curie temperature in the austenite, the magnetization shows no longer indications of ferromagnetic ordering. We further find an extended temperature region with a mixture of martensite and austenite phases, which directly relates to the magnetic properties.

36 MATERIALS SCIENCE↗

Kinetics of Domain Switching by Mechanical and Electrical Stimulation in Relaxor-Based Ferroelectrics

Ferroelectric materials have been extensively explored for applications in high-density nonvolatile memory devices because of their ferroelectric-ferroelastic domain-switching behavior under electric loading or mechanical stress. However, the existence of ferroelectric and ferroelastic backswitching would cause significant data loss, which affects the reliability of data storage. In this work, we apply in situ transmission electron microscopy and phase-field modeling to explore the unique ferroelastic domain-switching kinetics and the origin of this in relaxor-based Pb(Mg 1/3 Nb 2/3 )O 3 -33%PbTiO 3 single-crystal pillars under electrical and mechanical stimulations. Results showed that the electric-mechanical hysteresis loop shifted for relaxor-based single-crystal pillars because of the low energy levels of domains in the material and the constraint on the pillars, resulting in various mechanically reversible and irreversible domain-switching states. The phenomenon can potentially be used for advanced bit writing and reading in nonvolatile memories, which effectively overcomes the backswitching problem and broadens the types of ferroelectric materials for nonvolatile memory applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Division of attention as a function of the number of steps, visual shifts, and memory load

The effects on divided attention of visual shifts and long-term memory retrieval during a monitoring task are considered. A concurrent vigilance task was standardized under all experimental conditions. The results show that subjects can perform nearly perfectly on all of the time-shared tasks if long-term memory retrieval is not required for monitoring. With the requirement of memory retrieval, however, there was a large decrease in accuracy for all of the time-shared activities. It was concluded that the attentional demand of longterm memory retrieval is appreciable (even for a well-learned motor sequence), and thus memory retrieval results in a sizable reduction in the capability of subjects to divide their attention. A selected bibliography on the divided attention literature is provided.

Chechile, R. A.↗

Resource-aware compression

Systems, apparatuses, and methods for implementing a multi-tiered approach to cache compression are disclosed. A cache includes a cache controller, light compressor, and heavy compressor. The decision on which compressor to use for compressing cache lines is made based on certain resource availability such as cache capacity or memory bandwidth. This allows the cache to opportunistically use complex algorithms for compression while limiting the adverse effects of high decompression latency on system performance. To address the above issue, the proposed design takes advantage of the heavy compressors for effectively reducing memory bandwidth in high bandwidth memory (HBM) interfaces as long as they do not sacrifice system performance. Accordingly, the cache combines light and heavy compressors with a decision-making unit to achieve reduced off-chip memory traffic without sacrificing system performance.

97 MATHEMATICS AND COMPUTING↗

Simulation of radiation effects on three-dimensional computer optical memories

A model was developed to simulate the effects of heavy charged-particle (HCP) radiation on the information stored in three-dimensional computer optical memories. The model is based on (i) the HCP track radial dose distribution, (ii) the spatial and temporal distribution of temperature in the track, (iii) the matrix-specific radiation-induced changes that will affect the response, and (iv) the kinetics of transition of photochromic molecules from the colored to the colorless isomeric form (bit flip). It is shown that information stored in a volume of several nanometers radius around the particle's track axis may be lost. The magnitude of the effect is dependent on the particle's track structure.

Non-NASA Center↗

Tuning martensitic transitions in (MnNiSi) 0.65 (Fe 2 Ge) 0.35 through heat treatment and hydrostatic pressure

A first-order magneto-structural transition from a ferromagnetic orthorhombic TiNiSi-type martensite phase to a paramagnetic hexagonal Ni2In-type austenite phase was observed in (MnNiSi) 0.65 (Fe2Ge) 0.35 . In this work, we demonstrate that the first-order magneto-structural transition temperature for a given composition is tunable over a wide temperature range through heat treatment and hydrostatic pressure. The first-order transition temperature was reduced by over 100 K as the annealing temperature went from 600 to 900 °C, and this first-order transition was converted to second order when the sample was annealed at 1000 °C. The maximum magnetic-induced isothermal entropy change with μ0ΔH=7 T reaches -58 J/kg K for the sample annealed at 600 °C, and the relative cooling power reaches 558 J/kg for the sample annealed at 700 °C. Similar to the influence of annealing temperatures, the first-order martensitic transition temperatures were reduced as the application of hydrostatic pressure increased until they were converted to second order. Our results suggest that the (MnNiSi) 0.65 (Fe2Ge) 0.35 system is a promising platform for tuning magneto-structural transitions and the associated magnetocaloric effects. Furthermore, a similar heat treatment methodology or application of hydrostatic pressure can be applied to MnNiSi-based shape memory alloys to tailor their working transition temperatures.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗