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Results for “modulation doping”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 307 records · Page 17
All sourcesNASA NTRSDOE OSTI
DOE OSTI2014

Ferromagnetic (Mn, N)-codoped ZnO nanopillars array: Experimental and computational insights

To reveal the mechanism responsible for ferromagnetism in transition metal and hole codoped oxide semiconductors, we carry out a comparative study on Mn-doped and (Mn, N)-codoped ZnO nanopillars. Compared with Mn-doped ZnO samples, (Mn, N)-codoped ZnO nanopillars exhibit an enhanced room temperature ferromagnetism. The modulation of bound magnetic polarons via Mn and N codoping corroborates the correlation between the ferromagnetism and hole carriers, which is also verified by first-principles density functional theory calculations. Our study suggests that the electronic band alteration as a result of codoping engineering plays a critical role in stabilizing the long-range magnetic orderings.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Site-Specific Substitutional Boron Doping of Semiconducting Armchair Graphene Nanoribbons

A fundamental requirement for the development of advanced electronic device architectures based on graphene nanoribbon (GNR) technology is the ability to modulate the band structure and charge carrier concentration by substituting specific carbon atoms in the hexagonal graphene lattice with p- or n-type dopant heteroatoms. Here we report the atomically precise introduction of group III dopant atoms into bottom-up fabricated semiconducting armchair GNRs (AGNRs). Trigonal-planar B atoms along the backbone of the GNR share an empty p-orbital with the extended π-band for dopant functionality. Scanning tunneling microscopy (STM) topography reveals a characteristic modulation of the local density of states along the backbone of the GNR that is superimposable with the expected position and concentration of dopant B atoms. First-principles calculations support the experimental findings and provide additional insight into the band structure of B-doped 7-AGNRs.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2018

Beyond electrostatic modification: design and discovery of functional oxide phases via ionic-electronic doping

A new research field of functional materials and device physics is emerging that combines ionic transport with charge carrier modulation to realize emergent physical properties and discovery of metastable phases. The paradigm for enabling function extends far beyond carrier accumulation or depletion in band semiconductors or simply moving ions through an insulating electrolyte. Rather, by careful selection of electronically or structurally fragile materials, one can collapse or open band gaps via extreme ionic dopant concentration, or reconfigure their entire crystal structure to create new phases. Electron-electron and electron-lattice interactions can be coupled or controlled independently in such systems via electric fields without thermal constraints by use of ionic dopants. The unifying theme across these studies is to introduce ions and electrons via electric fields through interfaces with electrochemistry playing a dominant role. In this review, we briefly summarize this nascent field of iontronics and discuss principal results to date with examples from binary and complex oxides as well as selected 2D materials systems. Here, we conclude the review by highlighting gaps in fundamental scientific understanding and prospects for the use of such novel devices in future electronic, photonic and energy technologies.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Organic doping of rotated double layer graphene

Charge transfer techniques have been extensively used as knobs to tune electronic properties of two- dimensional systems, such as, for the modulation of conductivity \ mobility of single layer graphene and for opening the bandgap in bilayer graphene. The charge injected into the graphene layer shifts the Fermi level away from the minimum density of states point (Dirac point). In this work, we study charge transfer in rotated double-layer graphene achieved by the use of organic dopant, Tetracyanoquinodimethane. Naturally occurring bilayer graphene has a well-defined A-B stacking whereas in rotated double-layer the two graphene layers are randomly stacked with different rotational angles. This rotation is expected to significantly alter the interlayer interaction. Double-layer samples are prepared using layer-by-layer assembly of chemical vapor deposited single-layer graphene and they are identified by characteristic resonance in the Raman spectrum. The charge transfer and distribution of charges between the two graphene layers is studied using Raman spectroscopy and the results are compared with that for single-layer and A-B stacked bilayer graphene doped under identical conditions.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2014

Modulation of over 10{sup 14} cm{sup −2} electrons in SrTiO{sub 3}/GdTiO{sub 3} heterostructures

We demonstrate charge modulation of over 10{sup 14} cm{sup −2} electrons in a two-dimensional electron gas formed in SrTiO{sub 3}/GdTiO{sub 3} inverted heterostructure field-effect transistors. Increased charge modulation was achieved by reducing the effect of interfacial region capacitances through thick SrTiO{sub 3} cap layers. Transport and device characteristics of the heterostructure field-effect transistors were found to match a long channel field effect transistor model. SrTiO{sub 3} impurity doped metal–semiconductor field effect transistors were also demonstrated with excellent pinch-off and current density exceeding prior reports. The work reported here provides a path towards oxide-based electronics with extreme charge modulation exceeding 10{sup 14} cm{sup −2}.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Reversible modulation of electric transport properties by oxygen absorption and releasing on Nb:SrTiO{sub 3} surface

Pt Schottky contacts on (001)-orientated Nb-doped SrTiO{sub 3} (NSTO) in both ambient air and vacuum were investigated by the conductive atomic force microscope. The co-existed TiO{sub 2} and SrO termination layers were identified on the terrace-structured NSTO surface, where the former possessed a higher forward current than the latter. In ambient air, the barrier height of Pt/NSTO Schottky junction exhibited periodical variation with cyclic terrace plane and step sites, whereas it became homogeneous in ambient vacuum. We suggested that the oxygen absorption and releasing of surface dangling bonds were the origin for reversible changes in transport properties, which indicates a feasible approach for the surface modulation and band structure tailoring of NSTO based heterojunctions.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2019

Investigating PID Shunting in Polycrystalline CIGS Devices via Multi-Scale, Multi-Technique Characterization

We investigated potential-induced degradation (PID) in CuIn 1-x Ga x Se 2 (CIGS) mini-modules stressed in the laboratory. Small cores were removed from the modules and were subjected to analysis. We completed a proof-of-concept correlative study relating cathodoluminescence to sodium content via time-of-flight secondary-ion mass spectrometry imaging. By comparing one-dimensional depth profile results and three-dimensional tomography results on stressed and unstressed CIGS mini-modules, we can see that PID in CIGS results from sodium migration through absorber, most likely via grain boundaries. Potassium concentration distributions show little change when adding a voltage bias to a temperature and humidity stress. This suggests doping with other large alkali ions, such as cesium and rubidium, rather than sodium can increase the PID resistance of CIGS modules.

14 SOLAR ENERGY↗
DOE OSTI2015

Effects of Nickel Doping on the Multiferroic and Magnetic Phases of MnWO 4

There are various orders in multiferroic materials with a frustrated spiral spin modulation inducing a ferroelectric state are extremely sensitive to small perturbations such as magnetic and electric fields, external pressure, or chemical substitutions. A classical multiferroic, the mineral Hubnerite with chemical formula MnWO 4 , shows three different magnetic phases at low temperature. The intermediate phase between 7.5K < T < 12.7K is multiferroic and ferroelectricity is induced by an inversion symmetry breaking spiral Mn-spin order and strong spin-lattice interactions. Furthermore, the substitution of Ni 2+ (spin 1) for Mn 2+ (spin 5/2) in MnWO 4 and its effects on the magnetic and multiferroic phases are studied. The ferroelectric phase is stabilized for low Ni content (up to 10%). Upon further Ni doping, the polarization in the ferroelectric phase is quickly suppressed while a collinear and commensurate magnetic phase, characteristic of the magnetic structure in NiWO 4 , appears first at higher temperature, gradually extends to lower temperature, and becomes the ground state above 30% doping. Between 10% and 30%, the multiferroic phase coexists with the collinear commensurate phase. In this concentration region, the spin spiral plane is close to the a-b plane which explains the drop of the ferroelectric polarization. Finally, the phase diagram of Mn 1-x Ni x WO 4 is derived by a combination of magnetic susceptibility, specific heat, electric polarization, and neutron scattering measurements.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Pair density wave in the doped three-band Hubbard model on two-leg square cylinders

A pair density wave (PDW) is a superconducting (SC) state with a spatially modulated order parameter. Although much is known about the properties of the PDW state, its realization in microscopic models with divergent susceptibility has been challenging. Here, in this work, we report a density-matrix renormalization group study of a three-band Hubbard model (also known as the Emery model) for cuprates on long two-leg square cylinders. Upon light doping, we find that the ground state of the system is consistent with that of a PDW state with mutually commensurate and power-law SC, charge (CDW), and spin (SDW) density wave correlations. The SC correlations are dominant between neighboring Cu sites with d-wave pairing symmetry. Interestingly, we find that the near-neighbor interactions, especially the near-neighbor attractive V pd interaction between neighboring Cu and oxygen sites, can notably enhance the SC correlations while simultaneously suppressing the CDW correlations. For a modestly strong attractive V pd , the SC correlations become quasi-long-ranged with a divergent PDW susceptibility.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Commensurate 4 a 0 -period charge density modulations throughout the Bi 2 Sr 2 CaCu 2 O 8+x pseudogap regime

Theories based upon strong real space (r-space) electron–electron interactions have long predicted that unidirectional charge density modulations (CDMs) with four-unit-cell (4a0) periodicity should occur in the hole-doped cuprate Mott insulator (MI). Experimentally, however, increasing the hole density p is reported to cause the conventionally defined wavevector QA of the CDM to evolve continuously as if driven primarily by momentum-space (k-space) effects. Here we introduce phase-resolved electronic structure visualization for determination of the cuprate CDM wavevector. Remarkably, this technique reveals a virtually doping-independent locking of the local CDM wavevector at |Q0|=2π/4a0|Q0|=2π/4a0 throughout the underdoped phase diagram of the canonical cuprate Bi2Sr2CaCu2O8. These observations have significant fundamental consequences because they are orthogonal to a k-space (Fermi-surface)–based picture of the cuprate CDMs but are consistent with strong-coupling r-space–based theories. Our findings imply that it is the latter that provides the intrinsic organizational principle for the cuprate CDM state.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Improving Charge Transport and Environmental Stability of Carbohydrate-Bearing Semiconducting Polymers in Organic Field-Effect Transistors

Semiconducting polymers offer synthetic tunability, good mechanical properties, and biocompatibility, enabling the development of soft technologies previously inaccessible. Side-chain engineering is a versatile approach for optimizing these semiconducting materials, but minor modifications can significantly impact material properties and device performance. Carbohydrate side chains have been previously introduced to improve the solubility of semiconducting polymers in greener solvents. Despite this achievement, these materials exhibit suboptimal performance and stability in field-effect transistors. In this work, structure–property relationships are explored to enhance the device performance of carbohydrate-bearing semiconducting polymers. Toward this objective, a series of isoindigo-based polymers with carbohydrate side chains of varied carbon-spacer lengths is developed. Material and device characterizations reveal the effects of side chain composition on solid-state packing and device performance. With this new design, charge mobility is improved by up to three orders of magnitude compared to the previous studies. Processing–property relationships are also established by modulating annealing conditions and evaluating device stability upon air exposure. Notably, incidental oxygen-doping effects lead to increased charge mobility after 10 days of exposure to ambient air, correlated with decreased contact resistance. Bias stress stability is also evaluated. This work highlights the importance of understanding structure–property relationships toward the optimization of device performance

36 MATERIALS SCIENCE↗
DOE OSTI2015

Microwave sol–gel synthesis and upconversion photoluminescence properties of CaGd{sub 2}(WO{sub 4}){sub 4}:Er{sup 3+}/Yb{sup 3+} phosphors with incommensurately modulated structure

CaGd{sub 2−x}(WO{sub 4}){sub 4}:Er{sup 3+}/Yb{sup 3+} phosphors with the doping concentrations of Er{sup 3+} and Yb{sup 3+} (x=Er{sup 3+}+Yb{sup 3+}, Er{sup 3+}=0.05, 0.1, 0.2 and Yb{sup 3+}=0.2, 0.45) have been successfully synthesized by the microwave sol–gel method. The crystal structure of CaGd{sub 2−x}(WO{sub 4}){sub 4}:Er{sup 3+}/Yb{sup 3+} tungstates have been refined, and upconversion photoluminescence properties have been investigated. The synthesized particles, being formed after the heat-treatment at 900 °C for 16 h, showed a well crystallized morphology. Under the excitation at 980 nm, CaGd{sub 2}(WO{sub 4}){sub 4}:Er{sup 3+}/Yb{sup 3+} particles exhibited a strong 525-nm and a weak 550-nm emission bands in the green region and a very weak 655-nm emission band in the red region. The Raman spectrum of undoped CaGd{sub 2}(WO{sub 4}){sub 4} revealed about 12 narrow lines. The strongest band observed at 903 cm{sup −1} was assigned to the ν{sub 1} symmetric stretching vibration of WO{sub 4} tetrahedrons. The spectra of the samples doped with Er and Yb obtained under the 514.5 nm excitation were dominated by Er{sup 3+} luminescence preventing the recording of these samples Raman spectra. Concentration quenching of the erbium luminescence at {sup 2}H{sub 11/2}→{sup 4}I{sub 15/2} transition is weak in the range of erbium doping level x{sub Er}=0.05–0.2, while, for transition {sup 4}S{sub 3/2}→{sup 4}I{sub 15/2}, the signs of concentration quenching become pronounced at x{sub Er}=0.2. - Graphical abstract: CaGd{sub 2−x}(WO{sub 4}){sub 4}:Er{sup 3+}/Yb{sup 3+} phosphors with the doping concentrations of Er{sup 3+} and Yb{sup 3+} (x=Er{sup 3+}+Yb{sup 3+}, Er{sup 3+}=0.05, 0.1, 0.2 and Yb{sup 3+}=0.2, 0.45) have been successfully synthesized by the microwave sol–gel method and the crystal structure refinement, and upconversion photoluminescence properties have been investigated. - Highlights: • CaGd{sub 2−x}(WO{sub 4}){sub 4}:Er{sup 3+}/Yb{sup 3+} phosphors have been synthesized by the microwave sol–gel method. • The crystal structure of CaGd{sub 2−x}(WO{sub 4}){sub 4}:Er{sup 3+}/Yb{sup 3+} tungstates have been refined. • The upconversion photoluminescence properties have been investigated.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Oxygen redox activities governing high-voltage charging reversibility of Ni-rich layered cathodes

A schematic illustration indicative of the improved structural reversibility through stabilizing oxidized oxygen by Al doping. The chemical reactions and phase transitions at high voltages are generally considered to determine the electrochemical properties of high-voltage layered cathodes such as Ni-rich rhombohedral oxides. Even if significantly higher SOCs (states-of-charge) are utilized above the capability of transition metal redox (primarily Ni and Co), the effect of oxygen redox on Ni-rich rhombohedral oxides still looks mysterious thereby necessitating research that can clarify the relationship between redox reactions and phase transitions. Here, we performed a comprehensive and comparative study of the cationic and anionic redox reactions, as well as the structural evolution of a series of commercial Ni-rich layered oxides with and without Al doping. We combined the results from X-ray spectroscopy, operando electrochemical mass spectrometry, and neutron diffraction with electrochemical properties and thereby revealed the different oxygen redox activities associated with structural and electrochemical degradations. We reveal that Al doping suppresses the irreversible oxygen release but enhances the lattice oxygen oxidization. With this modulated oxygen redox activity, the Ni-rich layered oxides’ notorious H2–H3 structural phase transition becomes highly reversible. Our findings disentangle the different oxygen redox activities during high-voltage cycling and clarify the role of dopants in the Ni-rich layered oxides in terms of structural and electrochemical stability, shedding light on the future direction of optimizing layered cathode materials for safer high energy-density secondary batteries.

Lee, Gi-Hyeok↗
DOE OSTI2020

Impact of undoped substrates on high performance silicon solar cells

Today's highest-efficiency silicon solar cells typically operate near the threshold between low-level and high-level injection. It is not well understood if pushing further into a regime in which the cell operating point is solidly in high-level injection at all times of the day has further benefits for the solar cell performance. From a reliability perspective, cells fabricated on lower doped silicon have a larger breakdown voltage. This advantage can affect the design of modules allowing higher voltages and a relaxation of the number of bypass diodes needed. In this project, we present a comprehensive assessment, both experimental and using simulation, of how bulk resistivity, light intensity, and operation temperature impact the performance of the silicon solar cell. This work incorporates a comprehensive device physics analysis assisted by numerical simulation. The source code is now available under General Public License (GPL3), and to further leverage the findings of this project and outreach people outside of the scientific community, we are working with www.pveducation.org (which receives >1 million visitors a year) to create interactive content using our simulation results. The simulation results indicate that high bulk resistivity wafers (>>10 Ωcm) require bulk Shockley-Read-Hall (SRH) lifetimes in the millisecond range to outperform wafers with standard bulk resistivities (<10 Ωcm). Additionally, above bulk resistivities of 10 Ωcm (the exact value depends on the bulk characteristics of the wafer), the cell efficiency is weakly dependent on the bulk resistivity. As a result, ingot manufactures may have an opportunity to further reduce wafer cost by growing higher resistivity ingots that are more tolerant to resistivity variations. This project is particularly relevant today, as solar cell architectures with improved surface passivation and milliseconds lifetimes wafers are commercially available, leveraging potential benefits of using higher bulk resistivities. Outside of interdigitated back contact (IBC) cell, reported studies on high resistivity silicon (>100 Ωcm) are very limited. To the best of our knowledge, this project provides for the first-time experimental insight on solar cells fabricated on wafers with bulk resistivities up to several thousand Ωcm, delivering a comprehensive vision of their performance under real-world temperature and light intensity operation conditions. We manufactured and characterized solar cells with bulk resistivities in the range of 1 Ωcm to >15k Ωcm. Under standard testing conditions (STC), we measured solar cells efficiencies over 20% over the entire range of bulk resistivities, using our baseline cell processing. To evaluate the cell performance in real-world operation conditions, the solar cells were measured at different temperatures (25-80°C) and at different light intensities (0.1-1 suns). The measurements show that the bulk resistivity does not impact the solar cell response to temperature and light intensity. Similar thermal coefficients (TC) were measured for standard and high bulk resistivities, and they are comparable with the TC values reported in the literature for standard bulk resistivities <10 Ωcm. After light soaking, the solar cell didn’t show signs of light-induced degradation (LID). This result was expected since n-type float zone (FZ) wafers were used in this work, i.e. low traces of boron and low concentration of oxygen (oxygen is typically found in the seed end of Czochralski (CZ) ingots). We measured for high bulk resistivities (>10 Ωcm) extremely high breakdown voltages (>1000V). In conclusion, the insight provided by this project can positively impact the levelized cost of energy (LCOE) of the photovoltaic systems through its effect on cell and ingot manufacturing yield, silicon cell power output, and module reliability.

14 SOLAR ENERGY↗
DOE OSTI2014

Spin drift in highly doped n-type Si

A quantitative estimation of spin drift velocity in highly doped n-type silicon (Si) at 8 K is presented in this letter. A local two-terminal Hanle measurement enables the detection of a modulation of spin signals from the Si as a function of an external electric field, and this modulation is analyzed by using a spin drift-diffusion equation and an analytical solution of the Hanle-type spin precession. The analyses reveal that the spin drift velocity is linearly proportional to the electric field. The contribution of the spin drift effect to the spin signals is crosschecked by introducing a modified nonlocal four-terminal method.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

Passive harmonic mode-locking in an erbium-doped fibre laser

We report an all-fibre erbium laser operating in the regime of passive harmonic mode-locking based on the effect of nonlinear polarisation rotation. The generation of the 67th harmonic with a pulse repetition rate of 5.62 GHz and a duration of 1.8 ps is demonstrated. It is shown that as the harmonic number increases, both the frequency modulation parameters and the pulse duration change. (paper)

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2020

Ultrafine Interwoven Dendritic Cu 2 Se/CuFeSe 2 Composites with Enhanced Thermoelectric Performance

As an effort to develop high-performance and stable copper chalcogenide thermoelectrics, several (1-x)Cu 2 Se/(x)CuFeSe 2 composites were successfully synthesized via a one-step solid-state transformation of CuSe 2 template. Uniform ultrafine dendritic structures consisting of interweaving Cu 2 Se and CuFeSe 2 nanofibers were observed in samples with low Fe content (0.05 ≤ x ≤ 0.1). Increasing the Fe content to x = 0.5 led to phase segregation into Cu 2 Se-rich region with embedded CuFeSe 2 fine structures interwoven with CuFeSe 2 -rich region containing Cu 2 Se nanofibers. The formation of such an entwined dendritic structure is believed to arise from the temperature-dependent solubility of CuFeSe 2 in the Cu 2 Se matrix. The dynamic dissolution of CuFeSe 2 into the Cu 2 Se at high temperatures leads to temperature-dependent doping of the Cu 2 Se matrix, enabling drastic enhancements of thermoelectric power factor at high temperatures. As a result, such a strategy is expected to be a powerful tool for properties modulation in thermoelectric materials.

36 MATERIALS SCIENCE↗
DOE OSTI2011

Photoluminescence, thermally stimulated luminescence and electron paramagnetic resonance investigations of Tb{sup 3+} doped SrBPO{sub 5}

Graphical abstract: EPR spectra of BOHC's in 2 kGy {gamma}-irradiated SrBPO{sub 5}:Tb sample using Receiver Gain RG = 4 x 10{sup 4}, Modulation Amplitude MA = 0.25 G, Microwave power setting 6.3 mW: (A) un-annealed sample recorded at 300 K, (B) un-annealed sample recorded at 100 K and (C) sample annealed at 550 K for 10 min and recorded at 100 K. Highlights: {yields} PL studies on Tb doped SrBPO{sub 5} phosphor have shown emission due to Tb{sup 3+} associated with {sup 5}D{sub 3} {yields} {sup 7}F{sub J} and {sup 5}D{sub 4} {yields} {sup 7}F{sub J} (J = 3, 4, 5 and 6) transitions. {yields} The EPR studies on {gamma}-irradiated samples revealed formation of three types of boron oxygen hole trapped centres viz., BOHC{sub 1}, BOHC{sub 2} and BOHC{sub 3} and an electron trapped centre. {yields} The TSL peak at 475 K was associated with the thermal destruction of BOHC{sub 2}. -- Abstract: Trap level spectroscopic studies were carried out on {gamma}-irradiated Tb (1 mole%) doped SrBPO{sub 5} were carried out using photoluminescence (PL), thermally stimulated luminescence (TSL) and electron paramagnetic resonance (EPR) techniques. The incorporation of Tb in the 3+ oxidation state was ascertained from PL studies. Life time for Tb{sup 3+} emission corresponding to the intense transition {sup 5}D{sub 4} {yields} {sup 7}F{sub 5} at 543 nm was determined. The spectral characteristics of the TSL glows have shown that Tb{sup 3+} ions act as the emission center for the glow peak at 475 K. The trap parameters of the glow peak were determined. EPR investigations at room temperature/77 K revealed the stabilization of three boron oxygen hole trapped centers (BOHC's) and oxygen centered radicals such as O{sup -} and O{sub 2}{sup -} and trapped electrons in room temperature {gamma}-irradiated samples. TSL glow peak at 475 K was found to be associated with recombination of electron released from trapped electron center and the BOHC{sub 2} center.

36 MATERIALS SCIENCE↗