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Although a harsher condition, degradation of perovskite solar cells in an open-circuit condition is related to the performance in a quasi-maximum power point condition. Further, shadow masks should be used during illuminated stability studies.
The complex chemical nature of metal nanoparticle synthesis presents obstacles for the mechanistic understanding of nanoparticle growth and predictive synthesis design, despite significant progress in this area. Real-time characterization of the chemical processes that take place throughout nanoparticle growth will enable progress toward addressing outstanding challenges in metal nanoparticle synthesis, such as mitigating synthetic reproducibility issues, defining chemical mechanisms that direct nanoparticle growth, and designing synthetic conditions for previously unachievable combinations of nanoparticle shape and composition. In this Perspective, we present open-circuit potential (OCP) measurements as an in situ, real-time method for characterizing chemical changes during nanoparticle growth and discuss the method’s strengths in comparison to and in combination with other characterization techniques. We propose the use of OCP measurements as benchmarks for troubleshooting irreproducibility and streamlining synthetic optimization. Finally, we explore possibilities for using the increased parameter space accessible by electrodeposition to accelerate the development of shape-selective nanoparticle syntheses.
Adjusting the energy levels and fibrillar morphology is paramount to enhancing the power conversion efficiency (PCE) of organic solar cells (OSCs). In the present study, an increase in the open-circuit voltage (VOC) is facilitated through the elongation of the alkyl chain within AQx (namely AQx-8), aiming to decrease the free volume ratio (FVR). This reduction in FVR attenuates electron-phonon coupling, thereby augmenting emission efficiency and diminishing the non-radiative energy loss (ΔEnr). To further refine the energy levels and morphological characteristics, the external undecyl chain of AQx-8 is substituted with a shorter carbon chain and cyclohexane noted for its considerable steric hindrance (AQx-H). Additionally, this alteration significantly mitigates intermolecular aggregation, expands the bandgap, and elevates the lowest unoccupied molecular orbital (LUMO) energy level, culminating in an elevated VOC of 0.923 V in devices based on AQx-H. Morphological analysis reveals that blends based on AQx-H exhibit an enhanced multi-length-scale fibrillar structure, which is conducive to exciton dissociation and charge transport, thereby contributing to a high fill factor (FF) nearing 80%. Consequently, this study reports one of the highest binary PCEs documented, standing at 19.5% (with certification at 19.0%).
Reliable transport and thermodynamic data for multivalent ions in complex molten salts are scarce, limiting model fidelity for electrorefining and impurity control. Here, we report a comprehensive electrochemical characterization of SnCl₂ in LiCl–KCl–CaCl₂ (50.5–44.2–5.3 mol%) at 685 K, including the effects of Ni 2+ and Cu + impurities. Using cyclic voltammetry (CV), chronoamperometry (CA), and chronopotentiometry (CP), we quantified Sn 2+ and Ni 2+ diffusion with exceptional agreement across methods: Sn 2+ averaged (1.03 ± 0.10) × 10 −5 cm 2 s −1 , and Ni 2+ averaged (0.75 ± 0.19) × 10 −5 cm 2 s −1 . The tight confidence-interval overlap across CV, CA, and CP strengthens confidence in these values and is uncommon in molten chloride studies. Open-circuit-potential measurements provided standard apparent reduction potentials that closely match LiCl–KCl literature, indicating minimal shift with CaCl₂ present. The Sn 2+ /Sn couple behaves as a reversible two-electron soluble–insoluble process at 685 K; the Sn 4+ /Sn 2+ couple transitions to soluble–soluble behavior near 788 K, which may correlate with the decomposition of surface bound chlorostannates, though direct characterization remains to be established. In mixed systems, Cu+/Cu overlaps Sn 2+ /Sn, limiting Cusingle bondSn electroseparation, whereas the larger potential gap between Ni 2+ /Ni and Sn 2+ /Sn supports selective Ni removal. These internally consistent transport and thermodynamic data establish a validated basis for process modeling and optimization of Sn electrorefining and impurity management in LiCl–KCl–CaCl₂.
The open circuit voltage (VOC) deficit in Cd(Se,Te)-based photovoltaics remains a critical obstacle for pushing the technology closer to theoretical performance limits. Arsenic doping has become a dominant and promising route to achieve the higher p-type carrier concentrations necessary for higher VOC, but challenges associated with this alternate defect chemistry and higher doping density have hindered progress. Here we show that while arsenic doping enables high carrier concentrations (>1016 cm-3), co-doping with copper can provide a boost to VOC without a significant change to carrier concentration. A large data set is initially used to explore current-voltage and capacitance-voltage trends associated with arsenic doped devices with and without copper. A smaller subset is then used to probe these trends using a wide variety of characterization techniques. Copper is found to facilitate reduced interface recombination and potentially improved bulk absorber characteristics, though the mechanisms for these improvements are not yet clear. Despite the improved performance of co-doped devices, VOC is still far below its potential especially for highly doped devices. Low emitter doping in conjunction with high absorber doping seems to be a plausible cause for this significant deficit, though other device properties may exacerbate this problem.
The aim of this project was to leverage the low area specific resistance (ASR) of Redox’s GDC electrolyte-based cell architecture and increase solid oxide fuel cell (SOFC) efficiency (i.e., open circuit voltage, or OCV) without significantly increasing cell resistance. The key to achieving the increased SOFC efficiency is the introduction of a thin sputtered yttria stabilized zirconia (YSZ) electron-blocking layer and a thin sputtered gadolinia doped ceria (GDC) barrier layer on top of the half-cell substrate (i.e., anode and GDC electrolyte). A key initial effort of the project was to improve the quality of the half-cell substrate surface so that any remaining defects were significantly smaller than the desired film thickness. During lab-scale trials, we had to overcome challenges with film cracking during post-sputtering treatments (e.g., thermal anneals) as well as damage to the sputtering targets. After the initial lab-scale trials, the focus shifted toward the use of commercial scale sputtering equipment with a sputtering equipment manufacturer in the microelectronics industry. Using the commercial sputtering equipment, we deposited films with different variations of power, PO2, sputtering time, platen speed, etc. We then determined the combinations of sputtering conditions and post-sputtering treatments that yielded high-quality films without cracks or other significant defects. While thin films were deposited on cells as large as 10 cm by 10 cm, the processing was optimized using 4 cm by 4 cm cells. Cell performance was evaluated in stainless-steel test fixtures between 500 °C and 700 °C with hydrogen fuel fed to the anode and air fed to the cathode. Extensive studies allowed us to determine that modified cathode and cathode contact firing processes were required to achieve theoretical OCV. Moreover, use of the new firing processes resulted in the need for a modified cathode contact to achieve a low ASR. In summary, the project demonstrated the performance of high OCV (1.13 V at 650 °C) from sputtered layers and a low ASR (~0.25 Ohms-cm2 at 650 °C) resulting from a modification of cathode/contact processing and the introduction of alternative contact layers that are sufficient to yield a Gen-1 cell with a maximum power density of approximately 1.2 W/cm2. At an operating voltage of 0.74 V, this would yield a cell power density of ~1.1 W/cm2. While not utilized in this project, a Redox Gen-2 cell has a catalyst-infiltrated porous anode that reduces the ASR by more than 50% from that of the Gen-1 cells used in this project. Therefore, if the sputtered YSZ electron-blocking layer and GDC barrier layer are added to a Gen-2 half cell with a similar increase in OCV to the theoretical value of ~1.13 V at 650 °C, and if the same improvement in ASR (from that demonstrated in this project) is achieved when using the Gen-2 half-cell architecture as a sputtered cell substrate, then the power density at 0.74 Vop could be as high as ~2.6 W/cm2. The impact of such power density gains, while still maintaining high cell efficiency, and thus high system efficiency, is a dramatic decrease in system cost because the stack represents ~30-40% of the SOFC system cost.
The National Full-Scale Aerodynamics Complex 80- by 120-Foot Wind Tunnel (80x120) was dedicated in 1987 and rated at 100 knots for full-scale aircraft testing at NASA Ames Research Center. The 80x120 is the world’s largest wind tunnel, designed as an open circuit tunnel with a large aerodynamically treated inlet open to the ambient atmospheric air. In 2017, damage was sustained within the wind tunnel drive system, opening a window to do testing using the existing 1/50th-scale model of the 80- by 120-Foot Wind Tunnel within the full-scale 80- by 120-Foot Wind tunnel test section. The objective of the research was to quantify the turbulence levels within the 1/50th-scale test section as a function of onset atmospheric wind direction (± 90 deg from tunnel center-line), variable test section speed (5 – 50 m/s) and purposeful obtrusion of wind flow into the inlet. The model wind tunnel inlet, contraction, and test section are geometrically identical to that of the full-scale wind tunnel and model testing provides aerodynamic performance characteristics under controlled test conditions allowing for insight into the full-scale test section flow quality. The test section turbulence levels are minimally affected by the onset direction of the ambient atmospheric wind, but are dramatically affected by the speed in the tunnel while operated in the presence of winds. Original design specifications were axial/vertical/lateral turbulence ≤ 0.5% at maximum test section speed, though early full scale tunnel testing determined that lateral turbulence would be ≤ 0.6%. For test section speeds ≥ 30 m/s the tunnel is within the design specification limits. Between 5 m/s and 30 m/s, the test section turbulence levels are dependent on the onset wind direction and test section speed where test section turbulence in the axial, vertical and lateral directions was seen to be between 0.5% and 1% and, at times, greater than 1%. Finally, testing was performed with blockage designs at the inlet to disrupt the wind flow quality entering the tunnel contraction zone in an attempt to create higher levels of turbulence for high turbulent test conditions simulating the earth’s boundary layer. The highest turbulence levels measured were 6% in the axial direction by use of large spires designed to obstruct ≈ 50% of the inlet area.
Solution growth of single-crystal ferroelectric oxide films has long been pursued for the low-cost development of high-performance electronic and optoelectronic devices. However, the established principles of vapor-phase epitaxy cannot be directly applied to solution epitaxy, as the interactions between the substrates and the grown materials in solution are quite different. Here, we report the successful epitaxy of single-domain ferroelectric oxide films on Nb-doped SrTiO 3 single-crystal substrates by solution reaction at a low temperature of ~200 o C. The epitaxy is mainly driven by an electronic polarization screening effect at the interface between the substrates and the as-grown ferroelectric oxide films, which is realized by the electrons from the doped substrates. Atomic-level characterization reveals a nontrivial polarization gradient throughout the films in a long range up to ~500 nm because of a possible structural transition from the monoclinic phase to the tetragonal phase. This polarization gradient generates an extremely high photovoltaic short-circuit current density of ~2.153 mA/cm 2 and open-circuit voltage of ~1.15 V under 375 nm light illumination with power intensity of 500 mW/cm 2 , corresponding to the highest photoresponsivity of ~4.306×10 -3 A/W among all known ferroelectrics. Our results establish a general low-temperature solution route to produce single-crystal gradient films of ferroelectric oxides and thus open the avenue for their broad applications in self-powered photo-detectors, photovoltaic and optoelectronic devices.
Recent calculations by Wang et al. (1974) have shown that the short-circuit current for silicon solar cells is sensitive to the impurity distribution in the diffused and base region. In the present work, these theoretical results were verified by experimentally investigating the impurity profile and sheet resistance of the diffused layers of (n+)-p silicon solar cells fabricated by normal diffusion processes and at subsequently various drive-in times. Impurity profiles of the n+ diffused layer, measured by differential Hall and resistivity technique, resemble the erfc distribution. The junction depth is larger as drive-in time increases. Measured short-circuit current is in agreement with calculated ones. Open-circuit voltage is independent of drive-in times, and its calculated values are consistent with capacitance-voltage measurements.
Possible applications of superlattices to photovoltaic structures are discussed. A new concept based on doping superstructures (NIPI) can be exploited to significantly reduce recombination losses in III-V compound solar cells. A novel multijunction structure with lateral current transport is proposed. A computer simulation has been performed which shows that by optimizing the multilayer structure, short circuit current is substantially increased with minimum drop in open circuit voltage. An additional advantage of the structure is enhanced radiation tolerance. It is anticipated that this multilayer structure can be incorporated in multibandgap cells to achieve high efficiencies.
The methodology used to assess the probability of no impact of space debris and meteoroids on a spacecraft structure is applied to the Space Station solar array assembly. Starting with the space debris and meteoroids flux models, the projected surface area of the solar cell string circuit of the solar array panel and the mast longeron, and the design lifetime, the possibility of no impact on the solar array mast and solar cell string circuits was determined as a function of particle size. The probability of no impact on the cell string circuits was used to derive the probability of no open circuit panel. The probability of meeting a certain power requirement at the end of the design lifetime was then calculated as a function of impacting particle size. Coupled with a penetration and damage models/correlations which relate the particle size to the penetration depth and damage, the results of this analysis can be used to determine the probability of meeting the lower power requirement given a degree of redundancy, and the probability of no impact on the solar array mast.
A new variant of coplanar waveguide (CPW) which was termed channelized coplanar waveguide (CCPW) is presented. Measured propagation characteristics for CCPW such as epsilon(eff) and unloaded Q as a function of geometrical parameters and frequency are presented. The measured and modeled epsilon(eff) are also compared. Equivalent circuit model element values are presented for a CCPW open circuit and a CCPW right angle bend. A CCPW matched T-junction, matched 1:3 junction, and a novel coax-to-CCPW in-phase, N-way, radial power divider are also demonstrated.
The methodology used to assess the probability of no impact of space debris and meteoroids on a spacecraft structure is applied to the Space Station solar array assembly. Starting with space debris and meteoroid flux models, the projected surface area of the solar cell string circuit of the solar array panel and the mast longeron, and the design lifetime, the possibility of no impact on the solar mast and solar cell string circuits was determined as a function of particle size. The probability of no impact on the cell string circuits was used to derive the probability of no open circuit panel. The probability of meeting a certain power requirement at the end of the design lifetime was then calculated as a function of impacting particle size. Coupled with a penetration and damage models/correlations which relate the particle size to penetration depth and damage, the results of this analysis can be used to determine the probability of meeting the lower power requirement given a degree of redundancy, and the probability of no impact on the solar array mast.
The performance of triple junction InGaP/(In)GaAs/Ge space solar cells was studied following high energy electron irradiation at low temperature. Cell characterization was carried out in situ at the irradiation temperature while using low intensity illumination, and, as such, these conditions reflect those found for deep space, solar powered missions that are far from the sun. Cell characterization consisted of I-V measurements and quantum efficiency measurements. The low temperature irradiations caused substantial degradation that differs in some ways from that seen after room temperature irradiations. The short circuit current degrades more at low temperature while the open circuit voltage degrades more at room temperature. A room temperature anneal after the low temperature irradiation produced a substantial recovery in the degradation. Following irradiation at both temperatures and an extended room temperature anneal, quantum efficiency measurement suggests that the bulk of the remaining damage is in the (In)GaAs sub-cell
Here, we describe a fully in situ method of fabricating light-scattering structures on III-V materials that generates a rough morphology via vapor phase etching and redeposition. Fully in situ methods support higher industrial throughput by utilizing the growth reactor to generate the light-trapping structures after device growth without removal from the reactor. We use HCl and PH 3 to etch and redeposit scattering morphologies on Ga 0.5 In 0.5 P in a dynamic hydride vapor phase epitaxy (D-HVPE) reactor. We show that the addition of PH 3 leads to redeposition during the vapor phase HCl etching of Ga 0.5 In 0.5 P and that HCl flow rate and time exposed to HCl-PH 3 each independently cause a linear increase in the redeposited feature size, indicating that redeposition proceeds by island growth in a III-Cl-limited, hydride-enhanced HVPE regime. Auger electron spectroscopy and scanning transmission electron microscopy with energy dispersive spectroscopy (STEM-EDS) reveal redeposition to be highly Ga-rich GaInP, i.e., Ga(In)P. The Ga-rich nature of the redeposition results from the higher thermodynamic driving force for Ga incorporation than for In during HVPE growth and the difference in the volatility of the III-Cl etch products. The resulting morphologies have high broadband scattering, as determined by normal specular reflectance and integrating sphere measurements, indicating effectiveness as light-scattering structures. In a 270-nm-thick GaAs photovoltaic device with a textured back surface, we achieve a 4.9% increase in short circuit current density (J SC ) without any loss in open-circuit voltage (V OC ) relative to a planar control using only a 60 s in situ texturing treatment.
The drift field model used by Wolf to calculate the short-circuit current was extended to permit calculations of the open-circuit voltage and the maximum power under conditions of illumination of either tungsten (2800 C) source or AMO sunlight. Voltages were calculated using an expression for the drift field diode saturation current derived here. The model, applied to the oxygen rich (C-13 group) lithium solar cells, was used to calculate the pre-and post-electron bombardment trends for lithium gradients in the range of 10 to the 18th power to 10 to the 19th power Li/cm to the 4th power. Published experimental data characterizing these cells were used to tailor the model. The calculated trends are in reasonable agreement with the empirical data of Faith. Diffusion length degradation and carrier removal effects were sufficient to predict the cell performance up to 3 x 10 to the 14th power e/sq cm. Beyond this fluence it was necessary to include drift field removal effects.
A theory of an n-p-p/+/ junction is developed, entirely based on Shockley's depletion layer approximation. Under the further assumption of uniform doping the electrical characteristics of solar cells as a function of all relevant parameters (cell thickness, diffusion lengths, etc.) can quickly be ascertained with a minimum of computer time. Two effects contribute to the superior performance of a BSF cell (n-p-p/+/ junction) as compared to an ordinary solar cell (n-p junction). The sharing of the applied voltage among the two junctions (the n-p and the p-p/+/ junction) decreases the dark current and the reflection of minority carriers by the builtin electron field of the p-p/+/ junction increases the short-circuit current. The theory predicts an increase in the open-circuit voltage (Voc) with a decrease in cell thickness. Although the short-circuit current decreases at the same time, the efficiency of the cell is virtually unaltered in going from a thickness of 200 microns to a thickness of 50 microns. The importance of this fact for space missions where large power-to-weight ratios are required is obvious.
Presented are lumped equivalent circuit models for several coplanar waveguide discontinuities such as an open circuit, a series gap, and a symmetric step, and their element values as a function of the discontinuity physical dimensions. The model element values are de-embedded from measured S-parameters. The frequency dependence of the effective dielectric constant was measured and compared to computed values.