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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 307 records · Page 17
All sourcesNASA NTRSDOE OSTI
NASA NTRS1989

Making Excited Oxygen Molecules And Atoms

Oxidation of semiconductors and high-temperature superconductors achieved at lower temperatures by use of oxygen molecules or atoms raised into specific excited states. Use of excited oxygen (or other species) of interest in research on kinetics and mechanisms of chemical reactions. Used in ultra-high-vacuum chamber also equipped for such surface-analytical techniques as x-ray photoelectron spectroscopy.

Vasquez, Richard P.↗
NASA NTRS1998

Crystal Growth of Mixed Optical Materials With the Automatic Czochralski Puller

Most of optical and semiconductor single crystalline materials produced in the electronic industry is grown with the Czochralski technique. This is the only technique capable of producing large high quality single crystals in a reasonable amount of time. The technique originated, and took its name, from pioneering work by Polish engineer J. Czochralski in 1917, who pulled single crystal wires (fibers) of low melting point metals from the melt in order to determine the maximum speeds at which they could be crystallized. The technique has been modified and its application has been extended first to the growth of silicon and later to a very wide range of compound semiconductors, metals, oxides and halides. It is now the dominant technique for the wide range of materials in the electronic industries. Czochralski growth is initiated by dipping a seed crystal of a chosen crystallographic orientation onto the surface of a melt contained in the heated crucible. The seed is then slowly withdrawn, solidifying the adherent column of the melt in steady state at an average rate given by the sum of the pulling rate and the rate of lowering the solid-liquid interface due to the depletion of the melt in the crucible. The control of the desired crystal diameter is achieved by closely controlling the heat balance at the solid-liquid interface.

Loutts, George B.↗
NASA NTRS2005

A back-illuminated megapixel CMOS image sensor

In this paper, we present the test and characterization results for a back-illuminated megapixel CMOS imager. The imager pixel consists of a standard junction photodiode coupled to a three transistor-per-pixel switched source-follower readout [1]. The imager also consists of integrated timing and control and bias generation circuits, and provides analog output. The analog column-scan circuits were implemented in such a way that the imager could be configured to run in off-chip correlated double-sampling (CDS) mode. The imager was originally designed for normal front-illuminated operation, and was fabricated in a commercially available 0.5 pn triple-metal CMOS-imager compatible process. For backside illumination, the imager was thinned by etching away the substrate was etched away in a post-fabrication processing step.

Complementary Metal Oxide Semiconductor imager (CM↗