A Brief Overview of Relevant Silicon Carbide Electronics and Sensor Development for Long Duration Venus Surface Exploration
This presentation concentrates on the potential of long duration Venus surface missions, and the role of Silicon Carbide (SiC) electronics and sensor advancements in such exploration. For example, SiC integrated circuit (IC) electronics have matured to a state where a simple long-life scientific probe is feasible for extended Venus surface operations. These electronics have been demonstrated for more than a year at 500˚C, and 60 days in high-fidelity simulated Venus surface conditions [1-2]. Further, high temperature chemical sensing technology, including SiC-based gas sensors, integrated with SiC electronics can enable future exploration of the Venus surface atmosphere [3]. Continued maturation of these high temperature electronics and sensors has been part of the Long-Lived In-Situ Solar System Explorer (LLISSE) project to provide an operational system for in situ exploration of the Venus surface up to 60 days [4]. A key focus of this work includes increasing the complexity and decreasing the power consumption of the ICs which will pave the way to enhanced capabilities, such as long-duration Venus seismic measurements and other mission capabilities currently under development. This is in parallel to work expanding the capabilities of the sensor technology to provide science measurements on the Venus surface. This presentation will give an overview of possible extended duration Venus surface exploration and some of the SiC-based technologies that can enable this exploration.