Search NASA⌕ Search

SEARCH · Search NASA

Results for “photodiode”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 307 records · Page 17
All sourcesNASA NTRSDOE OSTI
NASA NTRS1997

Monolithically Integrated SiGe/Si PIN-HBT Front-End Transimpedance Photoreceivers

The demand for monolithically integrated photoreceivers based on Si-based technology keeps increasing as low cost and high reliability products are required for the expanding commercial market. Higher speed and wider operating frequency range are expected when SiGe/Si heterojunction is introduced to the circuit design. In this paper, a monolithic SiGe/Si PIN-HBT front-end transimpedance photoreceiver is demonstrated for the first time. For this purpose, mesa-type SiGe/Si PIN-HBT technology was developed. Fabricated HBTs exhibit f(sub max) of 34 GHz with DC gain of 25. SiGe/Si PIN photodiodes, which share base and collector layers of HBTs, demonstrate responsivity of 0.3 A/W at lambda=850 nm and bandwidth of 450 MHz. Based on these devices, single- and dual-feedback transimpedance amplifiers were fabricated and they exhibited the bandwidth of 3.2 GHz and 3.3 GHz with the transimpedance gain of 45.2 dB(Omega) and 47.4 dB(Omega) respectively. Monolithically integrated single-feedback PIN-HBT photoreceivers were implemented and the bandwidth was measured to be approx. 0.5 GHz, which is limited by the bandwidth of PIN photodiodes.

Rieh, J.-S.↗
NASA NTRS2001

Mars Array Technology Experiment Developed to Test Solar Arrays on Mars

Solar arrays will be the power supply for future missions to the planet Mars, including landers, rovers, and eventually human missions to explore the Martian surface. Until Mars Pathfinder landed in July 1997, no solar array had been used on the surface. The MATE package is intended to measure the solar energy reaching the surface, characterize the Martian environment to gather the baseline information required for designing power systems for long-duration missions, and to quantify the performance and degradation of advanced solar cells on the Martian surface. To measure the properties of sunlight reaching the Martian surface, MATE incorporates two radiometers and a visible/NIR spectrometer. The radiometers consist of multiple thermocouple junctions using thin-film technology. These devices generate a voltage proportional to the solar intensity. One radiometer measures the global broadband solar intensity, including both the direct and scattered sunlight, with a field of view of approximately 130. The second radiometer incorporates a slit to measure the direct (unscattered) intensity radiation. The direct radiometer can only be read once per day, with the Sun passing over the slit. The spectrometer measures the global solar spectrum with two 256-element photodiode arrays, one Si sensitive in the visible range (300 to 1100 nm), and a second InGaAs sensitive to the near infrared (900 to 1700 nm). This range covers 86 percent of the total energy from the Sun, with approximately 5-nm resolution. Each photodiode array has its own fiber-optic feed and grating. Although the purpose of the MATE is to gather data useful in designing solar arrays for Mars surface power systems, the radiometer and spectrometer measurements are expected to also provide important scientific data for characterizing the properties of suspended atmospheric dust. In addition to measuring the solar environment of Mars, MATE will measure the performance of five different individual solar cell types and two different solar cell strings, to qualify advanced solar cell types for future Mars missions. The MATE instrument, designed for the Mars-2001 Surveyor Lander mission, contains a capable suite of sensors that will provide both scientific information as well as important engineering data on the operation of solar power systems on Mars. MATE will characterize the intensity and spectrum of the solar radiation on Mars and measure the performance of solar arrays in the Mars environment. MATE flight hardware was built and tested at the NASA Glenn Research Center and is ready for flight.

Landis, Geoffrey A.↗
NASA NTRS2001

Lightweight Sun-Position Sensor Developed

An orbiting spacecraft needs to be able to accurately locate the position of the Sun so that the solar arrays can be pointed toward the Sun. This not only maximizes the production of power, but it also helps the arrays find their orientation in space so that they can accurately point antennae at ground stations. As part of the work on the (now postponed) Mars-2001 Surveyor Lander, NASA Glenn Research Center engineers developed a new Sun sensor that is far lighter and simpler than earlier designs. This sensor uses the technology of a linear photodiode array to find the position of the Sun in one axis. Two of these sensors, used together, can locate the x and y coordinates of the Sun relative to the spacecraft. These sensors have a mass of only 18 g each, nearly an order of magnitude lighter than earlier designs. (This mass does not include the electronic circuit to read the photodiode output, which is on the experiment microcontroller.) Near the center of the field of view, the Sun position can be found to 0.15

Landis, Geoffrey A.↗
NASA NTRS2005

Variable electronic shutter in CMOS imager with improved anti smearing techniques

A leakage compensated snapshot imager provides a number of different aspects to prevent smear and other problems in a snapshot imager. The area where the imager is formed may be biased in a way that prevents photo carriers including electrons and holes from reaching a storage area. In addition, a number of different aspects may improve the efficiency. The capacitance per unit area of the storage area may be one, two or more orders of magnitude greater than the capacitance per-unit area of the photodiode. In addition, a ratio between photodiode capacitance and storage area capacitance is maintained larger than 0.7.

Pain, Bedabrata↗
NASA NTRS2008

Optical Displacement Sensor for Sub-Hertz Applications

A document discusses a sensor made from off-the-shelf electro-optical photodiodes and electronics that achieves 20 nm/(Hz)(exp 1/2) displacement sensitivity at 1 mHz. This innovation was created using a fiber-coupled laser diode (or Nd:YAG) through a collimator and an aperture as the illumination source. Together with a germanium quad photodiode, the above-mentioned displacement sensor sensitivities have been achieved. This system was designed to aid the Laser Interferometer Space Antenna (LISA) with microthruster tests and to be a backup sensor for monitoring the relative position between a proof mass and a spacecraft for drag-free navigation. The optical displacement sensor can be used to monitor any small displacement from a remote location with minimal invasion on the system.

Abramovici, Alexander↗
NASA NTRS2007

Increasing Linear Dynamic Range of a CMOS Image Sensor

A generic design and a corresponding operating sequence have been developed for increasing the linear-response dynamic range of a complementary metal oxide/semiconductor (CMOS) image sensor. The design provides for linear calibrated dual-gain pixels that operate at high gain at a low signal level and at low gain at a signal level above a preset threshold. Unlike most prior designs for increasing dynamic range of an image sensor, this design does not entail any increase in noise (including fixed-pattern noise), decrease in responsivity or linearity, or degradation of photometric calibration. The figure is a simplified schematic diagram showing the circuit of one pixel and pertinent parts of its column readout circuitry. The conventional part of the pixel circuit includes a photodiode having a small capacitance, CD. The unconventional part includes an additional larger capacitance, CL, that can be connected to the photodiode via a transfer gate controlled in part by a latch. In the high-gain mode, the signal labeled TSR in the figure is held low through the latch, which also helps to adapt the gain on a pixel-by-pixel basis. Light must be coupled to the pixel through a microlens or by back illumination in order to obtain a high effective fill factor; this is necessary to ensure high quantum efficiency, a loss of which would minimize the efficacy of the dynamic- range-enhancement scheme. Once the level of illumination of the pixel exceeds the threshold, TSR is turned on, causing the transfer gate to conduct, thereby adding CL to the pixel capacitance. The added capacitance reduces the conversion gain, and increases the pixel electron-handling capacity, thereby providing an extension of the dynamic range. By use of an array of comparators also at the bottom of the column, photocharge voltages on sampling capacitors in each column are compared with a reference voltage to determine whether it is necessary to switch from the high-gain to the low-gain mode. Depending upon the built-in offset in each pixel and in each comparator, the point at which the gain change occurs will be different, adding gain-dependent fixed pattern noise in each pixel. The offset, and hence the fixed pattern noise, is eliminated by sampling the pixel readout charge four times by use of four capacitors (instead of two such capacitors as in conventional design) connected to the bottom of the column via electronic switches SHS1, SHR1, SHS2, and SHR2, respectively, corresponding to high and low values of the signals TSR and RST. The samples are combined in an appropriate fashion to cancel offset-induced errors, and provide spurious-free imaging with extended dynamic range.

Pain, Bedabrata↗
NASA NTRS2007

Procedures for Tuning a Multiresonator Photonic Filter

Two procedures have been devised for tuning a photonic filter that comprises multiple whispering-gallery mode (WGM) disk resonators. As used here, tuning signifies locking the filter to a specific laser frequency and configuring the filter to obtain a desired high-order transfer function. The main problem in tuning such a filter is how to select the correct relative loading of the resonators to realize a prescribed filter function. The first of the two procedures solves this problem. As temperature gradients develop during operation, the spectra of individual resonators tend to drift, primarily because of the thermorefractive effect. Thus, there arises the additional problem of how to adjust the tuning during operation to maintain the desired transfer function. The second of the two procedures solves this problem. To implement the procedures, it is necessary to incorporate the resonators into an apparatus like that of Figure 1. In this apparatus, the spectrum of each resonator can be adjusted individually, via the electro-optical effect, by adjusting a bias voltage applied to that resonator. In addition, the positions of the coupling prisms and resonators can be adjusted to increase or reduce the gaps between them, thereby reducing or increasing, respectively, the optical coupling between them. The optical power (Pi) in resonator i is monitored by use of a tracking photodiode. Another tracking diode monitors the power reflected from the input terminal (Pr), and still others monitor the input power (Pin) and output power (Po). The readings of these photodiodes are used to guide the tuning adjustments described in this paper.

Matsko, Andrey↗
NASA NTRS2011

CMOS Imager Has Better Cross-Talk and Full-Well Performance

A complementary metal oxide/semiconductor (CMOS) image detector now undergoing development is designed to exhibit less cross-talk and greater full-well capacity than do prior CMOS image detectors of the same type. Imagers of the type in question are designed to operate from low-voltage power supplies and are fabricated by processes that yield device features having dimensions in the deep submicron range. Because of the use of low supply potentials, maximum internal electric fields and depletion widths are correspondingly limited. In turn, these limitations are responsible for increases in cross-talk and decreases in charge-handling capacities. Moreover, for small pixels, lateral depletion cannot be extended. These adverse effects are even more accentuated in a back-illuminated CMOS imager, in which photogenerated charge carriers must travel across the entire thickness of the device. The figure shows a partial cross section of the structure in the device layer of the present developmental CMOS imager. (In a practical imager, the device layer would sit atop either a heavily doped silicon substrate or a thin silicon oxide layer on a silicon substrate, not shown here.) The imager chip is divided into two areas: area C, which contains readout circuits and other electronic circuits; and area I, which contains the imaging (photodetector and photogenerated-charge-collecting) pixel structures. Areas C and I are electrically isolated from each other by means of a trench filled with silicon oxide. The electrical isolation between areas C and I makes it possible to apply different supply potentials to these areas, thereby enabling optimization of the supply potential and associated design features for each area. More specifically, metal oxide semiconductor field-effect transistors (MOSFETs) that are typically included in CMOS imagers now reside in area C and can remain unchanged from established designs and operated at supply potentials prescribed for those designs, while the dopings and the lower supply potentials in area I can be tailored to optimize imager performance. In area I, the device layer includes an n+ -doped silicon layer on which is grown an n-doped silicon layer. A p-doped silicon layer is grown on top of the n -doped layer. The total imaging device thickness is the sum of the thickness of the n+, n, and p layers. A pixel photodiode is formed between a surface n+ implant, a p implant underneath it, the aforementioned p layer, and the n and n+ layers. Adjacent to the diode is a gate for transferring photogenerated charges out of the photodiode and into a floating diffusion formed by an implanted p+ layer on an implanted n-doped region. Metal contact pads are added to the back-side for providing back-side bias.

Pain, Bedabrata↗
NASA NTRS2005

Magnetometer Based on Optoelectronic Microwave Oscillator

proposed instrument, intended mainly for use as a magnetometer, would include an optoelectronic oscillator (OEO) stabilized by an atomic cell that could play the role of a magnetically tunable microwave filter. The microwave frequency would vary with the magnetic field in the cell, thereby providing an indication of the magnetic field. The proposed magnetometer would offer a combination of high accuracy and high sensitivity, characterized by flux densities of less than a picotesla. In comparison with prior magnetometers, the proposed magnetometer could, in principle, be constructed as a compact, lightweight instrument: It could fit into a package of about 10 by 10 by 10 cm and would have a mass <0.5 kg. As described in several prior NASA Tech Briefs articles, an OEO is a hybrid of photonic and electronic components that generates highly spectrally pure microwave radiation, and optical radiation modulated by the microwave radiation, through direct conversion between laser light and microwave radiation in an optoelectronic feedback loop. As used here, "atomic cell" signifies a cell containing a vapor, the constituent atoms of which can be made to undergo transitions between quantum states, denoted hyperfine levels, when excited by light in a suitable wavelength range. The laser light must be in this range. The energy difference between the hyperfine levels defines the microwave frequency. In the proposed instrument (see figure), light from a laser would be introduced into an electro-optical modulator (EOM). Amplitude-modulated light from the exit port of the EOM would pass through a fiber-optic splitter having two output branches. The light in one branch would be sent through an atomic cell to a photodiode. The light in the other branch would constitute the microwave-modulated optical output. Part of the light leaving the atomic cell could also be used to stabilize the laser at a frequency in the vicinity of the desired hyperfine or other quantum transition. The microwave signal from the output of the photodiode would be amplified (if necessary, as explained below) and fed back into the EOM. This system would oscillate if the amplification in the closed loop exceeded the linear absorption of the loop. The microwave amplifier may be unnecessary to sustain stable oscillations, depending on the power of the laser radiation at the photodetector and on particular features of the modulator and optical delay line.

Maleki, Lute↗
NASA NTRS2011

Fast Imaging Detector Readout Circuits with In-Pixel ADCs for Fourier Transform Imaging Spectrometers

Focal plane arrays (FPAs) with high frame rates and many pixels benefit several upcoming Earth science missions including GEO-CAPE, GACM, and ACE by enabling broader spatial coverage and higher spectral resolution. FPAs for the PanFTS, a high spatial resolution Fourier transform spectrometer and a candidate instrument for the GEO-CAPE mission are the focus of the developments reported here, but this FPA technology has the potential to enable a variety of future measurements and instruments. The ESTO ACT Program funded the developed of a fast readout integrated circuit (ROIC) based on an innovative in-pixel analog-to-digital converter (ADC). The 128 X 128 pixel ROIC features 60 ?m pixels, a 14-bit ADC in each pixel and operates at a continuous frame rate of 14 kHz consuming only 1.1 W of power. The ROIC outputs digitized data completely eliminating the bulky, power consuming signal chains needed by conventional FPAs. The 128 X 128 pixel ROIC has been fabricated in CMOS and tested at the Jet Propulsion Laboratory. The current version is designed to be hybridized with PIN photodiode arrays via indium bump bonding for light detection in the visible and ultraviolet spectral regions. However, the ROIC design incorporates a small photodiode in each cell to permit detailed characterization of the ROICperformance without the need for hybridization. We will describe the essential features of the ROIC design and present results of ROIC performance measurements.

focal plane arrays (FPAs)↗
NASA NTRS2012

Branching Ratios for The Radiometric Calibration of EUNIS-2012

The Extreme Ultraviolet Normal Incidence Spectrograph (EUNIS) sounding rocket instrument is a two-channel imaging spectrograph that observes the solar corona and transition region with high spectral resolution and a rapid cadence made possible by unprecedented sensitivity. The upcoming flight will incorporate a new wavelength channel covering the range 524-630 Angstroms, the previously-flown 300-370 Angstroms channel, and the first flight demonstration of cooled active pixel sensor (APS) arrays. The new 524-630 Angstrom channel incorporates a Toroidal Varied Line Space (TVLS) grating coated with B4C/Ir, providing broad spectral coverage and a wide temperature range of 0.025 to 10 MK. Absolute radiometric calibration of the two channels is being performed using a hollow cathode discharge lamp and NIST-calibrated AXUV-100G photodiode. Laboratory observations of He I 584 Angstroms and He II 304 Angstroms provide absolute radiometric calibrations of the two channels at those two respective wavelengths by using the AXUV photodiode as a transfer standard. The spectral responsivity is being determined by observing line pairs with a common upper state in the spectra of Ne I-III and Ar II-III. Calculations of A-values for the observed branching ratios are in progress.

Daw, Adrian N.↗
NASA NTRS2013

Methods of Fabricating Scintillators with Radioisotopes for Beta Battery Applications

Technology has been developed for a class of self-contained, long-duration power sources called beta batteries, which harvest the energy contained in the radioactive emissions from beta decay isotopes. The new battery is a significant improvement over the conventional phosphor/solar cell concept for converting this energy in three ways. First, the thin phosphor is replaced with a thick scintillator that is transparent to its own emissions. By using a scintillator sufficiently thick to completely stop all the beta particles, efficiency is greatly improved. Second, since the energy of the beta particles is absorbed in the scintillator, the semiconductor photodetector is shielded from radiation damage that presently limits the performance and lifetime of traditional phosphor converters. Finally, instead of a thin film of beta-emitting material, the isotopes are incorporated into the entire volume of the thick scintillator crystal allowing more activity to be included in the converter without self-absorption. There is no chemical difference between radioactive and stable strontium beta emitters such as Sr-90, so the beta emitter can be uniformly distributed throughout a strontium based scintillator crystal. When beta emitter material is applied as a foil or thin film to the surface of a solar cell or even to the surface of a scintillator, much of the radiation escapes due to the geometry, and some is absorbed within the layer itself, leading to inefficient harvesting of the energy. In contrast, if the emitting atoms are incorporated within the scintillator, the geometry allows for the capture and efficient conversion of the energy of particles emitted in any direction. Any gamma rays associated with secondary decays or Bremsstrahlung photons may also be absorbed within the scintillator, and converted to lower energy photons, which will in turn be captured by the photocell or photodiode. Some energy will be lost in this two-stage conversion process (high-energy particle to low-energy photons to electric current). The geometric advantage partially offsets this as well, since the absorption depth of high-energy beta radiation is much larger than the depth of a p-n junction. Thus, in a p-n junction device, much of the radiation is absorbed far away from the junction, and the electron- hole pairs are not all effectively collected. In contrast, with a transparent scintillator the radiation can be converted to light in a larger volume, and all of the light can be collected in the active region of the photodiode. Finally, the new device is more practical because it can be used at much higher power levels without unduly shortening its lifetime. While the crystal structure of scintillators is also subject to radiation damage, their performance is far more tolerant of defects than that of semiconductor junctions. This allows the scintillator- based approach to use both higher energy isotopes and larger quantities of the isotopes. It is projected that this technology has the potential to produce a radioisotope battery with up to twice the efficiency of presently used systems.

Rensing, Noa M.↗
NASA NTRS2014

Investigation into the Use of the Concept Laser QM System as an In-Situ Research and Evaluation Tool

The NASA Marshall Space Flight Center (MSFC) is using a Concept Laser Fusing (Cusing) M2 powder bed additive manufacturing system for the build of space flight prototypes and hardware. NASA MSFC is collecting and analyzing data from the M2 QM Meltpool and QM Coating systems for builds. This data is intended to aide in understanding of the powder-bed additive manufacturing process, and in the development of a thermal model for the process. The QM systems are marketed by Concept Laser GmbH as in-situ quality management modules. The QM Meltpool system uses both a high-speed near-IR camera and a photodiode to monitor the melt pool generated by the laser. The software determines from the camera images the size of the melt pool. The camera also measures the integrated intensity of the IR radiation, and the photodiode gives an intensity value based on the brightness of the melt pool. The QM coating system uses a high resolution optical camera to image the surface after each layer has been formed. The objective of this investigation was to determine the adequacy of the QM Meltpool system as a research instrument for in-situ measurement of melt pool size and temperature and its applicability to NASA's objectives in (1) Developing a process thermal model and (2) Quantifying feedback measurements with the intent of meeting quality requirements or specifications. Note that Concept Laser markets the system only as capable of giving an indication of changes between builds, not as an in-situ research and evaluation tool. A secondary objective of the investigation is to determine the adequacy of the QM Coating system as an in-situ layer-wise geometry and layer quality evaluation tool.

Bagg, Stacey↗
NASA NTRS2016

Novel Photon-Counting Detectors for Free-Space Communication

We present performance data for novel photon counting detectors for free space optical communication. NASA GSFC is testing the performance of three novel photon counting detectors 1) a 2x8 mercury cadmium telluride avalanche array made by DRS Inc. 2) a commercial 2880 silicon avalanche photodiode array and 3) a prototype resonant cavity silicon avalanche photodiode array. We will present and compare dark count, photon detection efficiency, wavelength response and communication performance data for these detectors. We discuss system wavelength trades and architectures for optimizing overall communication link sensitivity, data rate and cost performance. The HgCdTe APD array has photon detection efficiencies of greater than 50 were routinely demonstrated across 5 arrays, with one array reaching a maximum PDE of 70. High resolution pixel-surface spot scans were performed and the junction diameters of the diodes were measured. The junction diameter was decreased from 31 m to 25 m resulting in a 2x increase in e-APD gain from 470 on the 2010 array to 1100 on the array delivered to NASA GSFC. Mean single photon SNRs of over 12 were demonstrated at excess noise factors of 1.2-1.3.The commercial silicon APD array has a fast output with rise times of 300ps and pulse widths of 600ps. Received and filtered signals from the entire array are multiplexed onto this single fast output. The prototype resonant cavity silicon APD array is being developed for use at 1 micron wavelength.

Photons↗
NASA NTRS2020

Multi-Point Line Focused Laser Differential Interferometer for High-Speed Flow Fluctuation Measurements

A multi-point focused laser differential interferometer (FLDI) has been developed to measure density fluctuations at 16 points along a line. A pair of cylindrical lenses on the transmitter side of a conventional single-point FLDI instrument form two closely spaced (≤200 μm), orthogonally polarized, parallel laser lines at the instrument’s focus. On the receiver side of the instrument, the interference of the beams on a 16-element photodiode array results in a single line of measurements. The further addition of a Nomarski prism creates two separate measurement lines, and the addition of a second photodiode array to the instrument enables simultaneous measurements of density fluctuations along the two lines separated by several millimeters. These two lines of measurement can be conveniently oriented at any azimuthal angle relative to the instrument’s optical axis on the measurement plane, coinciding with the instrument’s focus. Two experiments were performed to demonstrate the capabilities of the instrument. In the first experiment, a laser-induced breakdown spark generated a traveling spherical shock wave, and measurements of the resulting density disturbance and wave velocity were obtained. These results were compared to high-speed schlieren images of the shock wave acquired at 400 kHz. In the second experiment, the multi-point FLDI instrument was used to measure density disturbances in the boundary layer of a flat plate in a Mach 6 freestream flow. The measurements were made along two lines, both approximately 6 mm in length, extending from the surface of the plate through the boundary layer. High-speed schlieren images were acquired at 100 kHz during separate wind tunnel runs at matching unit Reynolds numbers to visualize the unsteady boundary layer flow and compare to the FLDI measurements.

Laser beam shaping↗
NASA NTRS2023

Ionizing Radiation Effects on Hole Collection Backside-Illuminated P-Type Deep-Trench Pinned Photo-MOS Pixels under Image Acquisition

Dark current degradation, origins, and annealing behavior after x-ray irradiation are studied in a P-type, hole collecting, backside-illuminated image sensor currently being developed at STMicroelectronics and based on deep-trenched photo-MOS pixels. Different biasing conditions during irradiation, i.e. grounded or biased and sequenced, are compared. The dark current increase with total ionizing dose (TID) and the dark current annealing behavior seem to be driven by the backside interface between the P-epitaxy of the pixels and the ONO stack. Despite still being under development, this pixel architecture already exhibits both very good electro-optical performance and a better radiation hardness than pinned photodiode-based CMOS Image sensors that benefit from the same advanced CIS processing technologies. At high total dose range, the photogate challenges custom Radiation-Hardened-by-Design photodiodes by exhibiting a comparable radiation tolerance while bringing new features such as high-resolution or Correlated Double Sampling.

CMOS Image Sensor (CIS)↗
DOE OSTI2022

Optical device for in-line and real-time monitoring of microorganisms

A multi-wavelength laser diode based optical sensor system capable of monitoring the dynamics and physiological changes of a microorganism culture in real-time. The microorganism culture from a microorganism production chamber is pumped to a flow chamber. Laser diodes emit light at certain wavelengths through the flow chamber, which is sensed by photodiodes. A laser control circuitry is operatively connected to the laser diodes and a signal conditioning circuitry is operatively connected to the photodiodes. A microprocessor reads and records voltage signals corresponding to the wavelengths. A data acquisition system converts said voltage signals into measurements of biological parameters, which are displayed on a graphical user interface and allow a user to monitor the measurements in real time.

47 OTHER INSTRUMENTATION↗
DOE OSTI2021

Organic photodetector with built-in amplification for the detection of visible light with low optical power

We report on an organic-based photodetector that integrates a dual-gate organic thin-film transistor (DG-OTFT) with an organic photodiode (OPD) to produce a device with a high effective responsivity at low optical power and video-rate compatible response. In this device, the OPD operates in photovoltaic mode, instead of the commonly used photoconductive mode, to modulate one of the gate voltages of the DG-OTFT. Effective responsivity values of 10 A W –1 are measured at optical power values lower than 10 nW at 635 nm. Here, modeling of the operation of this new photodetector suggests that effective responsivity values up to 10 5 A W –1 can be achieved at optical powers of 1 nW using current printing technology and state-of-the-art organic semiconductors.

47 OTHER INSTRUMENTATION↗