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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 307 records · Page 17
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Quantum real-time evolution of entanglement and hadronization in jet production: Lessons from the massive Schwinger model

The possible link between entanglement and thermalization, and the dynamics of hadronization are addressed by studying the real-time response of the massive Schwinger model coupled to external sources. This setup mimics the production and fragmentation of quark jets, as the Schwinger model and quantum chromodynamics (QCD) share the properties of confinement and chiral symmetry breaking. By using simulations of quantum dynamics on classical hardware, we study the entanglement between the produced jets, and observe the growth of the corresponding entanglement entropy in time. This growth arises from the increased number of contributing eigenstates of the reduced density matrix with sufficiently large and close eigenvalues. We also investigate the physical nature of these eigenstates, and find that at early times they correspond to fermionic Fock states. We then observe the transition from these fermionic Fock states to mesonlike bound states as a function of time. In other words, we observe how hadronization develops in real time. At late times, the local observables at midrapidity (such as the fermion density and the electric field) approach approximately constant values, suggesting the onset of equilibrium and approach to thermalization. Published by the American Physical Society 2024

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2020

Ultra-high aspect ratio pores milled in diamond via laser, ion and electron beam mediated processes

Microfabrication techniques are critical for the rapid prototyping and development of applications for cutting edge materials. Recently diamond has gained considerable interest for quantum photonic, biosensing, inertial confinement fusion and magnetometer applications. In this article, ultra-high aspect ratio milling of diamond micropores by photon, ion and electron based methods is reported. A multiphoton absorption laser ablation approach is revealed to rapidly produce sub-10 μm diameter micropores in diamond with an aspect ratio of 14:1 and a tapered profile at the surface interface. Chemically active, oxygen focused ion beam milling produces high-aspect ratio pores in diamond with an aspect ratio of 65:1 and minimal tapering over the length of the pore, overcoming the physical interaction volume limitations imposed in conventional gallium based focused ion beam milling and laser ablation methods. Oxygen-mediated electron beam induced etching is revealed to negate the limitations imposed by physical sputtering mechanisms utilized in focused ion beam milling via the direct initiation of chemical reactions at the receding surface, producing aspect ratios on the order of 200:1. Numerical simulations reveal the physical basis for the superior aspect-ratio pore milling of the oxygen focused ion beam milling and electron beam induced etching methods. Our results demonstrate direct-write methods for the fabrication of ultra-high aspect micropores in diamond and provide insight into the underlying mechanisms of these physical processes. The three methods demonstrated here can be interchanged for applications based on the desired characteristic aspect ratio and process throughput.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Si/SiGe QuBus for single electron information-processing devices with memory and micron-scale connectivity function

The connectivity within single carrier information-processing devices requires transport and storage of single charge quanta. Single electrons have been adiabatically transported while confined to a moving quantum dot in short, all-electrical Si/SiGe shuttle device, called quantum bus (QuBus). Here we show a QuBus spanning a length of 10 μm and operated by only six simply-tunable voltage pulses. We introduce a characterization method, called shuttle-tomography, to benchmark the potential imperfections and local shuttle-fidelity of the QuBus. The fidelity of the single-electron shuttle across the full device and back (a total distance of 19 μm) is (99.7 ± 0.3) %. Using the QuBus, we position and detect up to 34 electrons and initialize a register of 34 quantum dots with arbitrarily chosen patterns of zero and single-electrons. The simple operation signals, compatibility with industry fabrication and low spin-environment-interaction in 28 Si/SiGe, promises long-range spin-conserving transport of spin qubits for quantum connectivity in quantum computing architectures.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2022

Improved Radiative Recombination in AlInGaP LEDs

Direct-emitting red and amber LEDs based on the AlInGaP material system offer a higher efficacy potential than phosphor-converted (pc) red and amber LEDs due to the absence of Stokes losses. Direct red LEDs (~610-620nm) are increasingly used in color-mixed and color-tunable illumination applications, where they have a significant advantage over pc-red LEDs, with high power conversion efficiency (PCE) and narrower emission enabling higher luminous efficacy of radiation (LER). Still, adoption is limited as the complexities associated with mixing different emitters offset the value of the efficacy gain. Adoption of direct amber LEDs (~580-595nm) in illumination applications is virtually non-existent due to their lower PCE and the availability of very efficient pc-amber emitters, which suffer less from Stokes loss and LER penalties associated with the broader bandwidth than pc-red. Further improvement in PCE of direct red and amber LEDs is needed to achieve wider adoption and ultimately enable more energy savings than possible with pc-LEDs. In this project, Lumileds has developed improved high-power amber and red LEDs incorporating tensile-strain barriers into the active region to improve carrier confinement and thereby increase external quantum efficiency (EQE). This approach is most beneficial for the short (amber) end of the AlInGaP wavelength range where carrier confinement is lowest. An EQE of 22% was achieved for amber LEDs, exceeding the project target of 20%

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
NASA NTRS1985

Cryogenic operation of pseudomorphic AlGaAs/InGaAs single-quantum-well MODFETs

The 77 K operation of AlGaAs/InGaAs MODFETs has been investigated. The structures, grown by MBE, make use of a 200 A undoped In(0.15)Ga(0.85)As quantum well for electron confinement and an Si-doped Al(0.15)Ga(0.85)As top barrier. The MODFETs with 1 micron gate lengths exhibit extrinsic transconductances of 360 mS/mm and maximum currents of 310 mA/mm at 77 K. The use of a low Al mole fraction AlGaAs/InGaAs heterojunction makes it possible to avoid the persistent trapping effects encountered in AlGaAs/GaAs MODFETs without sacrificing device performance.

Masselink, W. T.↗
NASA NTRS1985

High transconductance InGaAs/AlGaAs pseudomorphic modulation-doped field-effect transistors

Pseudomorphic In0.15Ga0.85As/A10.15Ga0.85As modulation-doped field effect transistors (MODFET's) exhibiting extremely good dc characteristics have been successfully fabricated. dc transconductance in these strained-layer structures of 270 mS/mm was measured for 1-micron gate, normally-on devices at 300 K. Maximum drain current levels are 290 mA/mm, with excellent pinch-off and saturation characteristics. The transconductance increased to 360 mS/mm at 77 K while no persistent photoconductivity or drain collapse was observed. Preliminary microwave results indicate a 300-K current gain cutoff frequency of about 20 GHz. These results are equivalent to the best GaAs/AlGaAs MODFET results and are due in part to the improved transport properties and carrier confinement in the InGaAs quantum well.

Ketterson, A.↗
NASA NTRS1988

The laboratory millimeter- and submillimeter-wave spectrum of the first two excited torsional states of (C-13)H3OH

The rotational-torsional spectrum of (C-13)H3OH is presented in both the symmetric and degenerate substates of the first two excited torsional states. Of the new transitions reported, 122 lines are from the v(t) = 1 torsional state and 110 lines are from the v(t) = 2 torsional state, and all are confined to the rotational quantum number J = 8 or less. The data are combined with previously reported millimeter and submillimeter data for the v(t) = 0 torsional state and 44 previously measured excited torsional state lines to form a global data set of 596 transitions, which is analyzed and fitted using an extended internal axis method. The fit results in an overall rms deviation of 1.98 MHz. The spectral constants generated by the fit are used to predict an additional 123 lines of (C-13)H3OH in the v(t) = 1,2 excited torsional states with frequencies up to 612 GHz and rotational quantum number J = 11 or less.

Anderson, Todd↗
DOE OSTI2020

Confinement, reduced entanglement, and spin-glass order in a random quantum spin-ice model

In this work, we study an effective spin model derived perturbatively from a random transverse-field Ising model on the pyrochlore lattice. The model consists of spin configurations on the pyrochlore lattice, restricted to the spin-ice subspace, with spins interacting with random Ising exchange couplings as well as ring exchanges along the hexagons of the lattice. This model is studied by exact diagonalization up to N=64 site systems. Furthermore, we calculate spin-glass correlation functions and local entanglement entropy S T between spins in a single tetrahedron and the rest of the system. We find that the model undergoes two phase transitions. At weak randomness the model is in a quantum spin-ice phase where S T =ln 6. Increasing randomness, at low transverse fields, first leads to a frozen phase, with long-range spin-glass order and S T =ln 2 corresponding to the Cat states associated with Ising order. Further increase in randomness leads to a random resonating-hexagon phase with a frozen backbone of spins and a broad distribution of entanglement entropies. The implications of these studies for non-Kramers rare-earth pyrochlores are discussed.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Single molecule tracking of bacterial cell surface cytochromes reveals dynamics that impact long-distance electron transport

Using a series of multiheme cytochromes, the metal-reducing bacterium Shewanella oneidensis MR-1 can perform extracellular electron transfer (EET) to respire redox-active surfaces, including minerals and electrodes outside the cell. While the role of multiheme cytochromes in transporting electrons across the cell wall is well established, these cytochromes were also recently found to facilitate long-distance (micrometer-scale) redox conduction along outer membranes and across multiple cells bridging electrodes. Recent studies proposed that long-distance conduction arises from the interplay of electron hopping and cytochrome diffusion, which allows collisions and electron exchange between cytochromes along membranes. However, the diffusive dynamics of the multiheme cytochromes have never been observed or quantified in vivo, making it difficult to assess their hypothesized contribution to the collision-exchange mechanism. Here, we use quantum dot labeling, total internal reflection fluorescence microscopy, and single-particle tracking to quantify the lateral diffusive dynamics of the outer membrane-associated decaheme cytochromes MtrC and OmcA, two key components of EET in S. oneidensis. We observe confined diffusion behavior for both quantum dot-labeled MtrC and OmcA along cell surfaces (diffusion coefficients D MtrC = 0.0192 ± 0.0018 µm 2 /s, D OmcA = 0.0125 ± 0.0024 µm 2 /s) and the membrane extensions thought to function as bacterial nanowires. We find that these dynamics can trace a path for electron transport via overlap of cytochrome trajectories, consistent with the long-distance conduction mechanism. The measured dynamics inform kinetic Monte Carlo simulations that combine direct electron hopping and redox molecule diffusion, revealing significant electron transport rates along cells and membrane nanowires.

59 BASIC BIOLOGICAL SCIENCES↗
DOE OSTI2020

Unconventional Hall response in the quantum limit of HfTe 5

Interacting electrons confined to their lowest Landau level in a high magnetic field can form a variety of correlated states, some of which manifest themselves in a Hall effect. Although such states have been predicted to occur in three-dimensional semimetals, a corresponding Hall response has not yet been experimentally observed. Here, we report the observation of an unconventional Hall response in the quantum limit of the bulk semimetal HfTe 5 , adjacent to the three-dimensional quantum Hall effect of a single electron band at low magnetic fields. The additional plateau-like feature in the Hall conductivity of the lowest Landau level is accompanied by a Shubnikov-de Haas minimum in the longitudinal electrical resistivity and its magnitude relates as 3/5 to the height of the last plateau of the three-dimensional quantum Hall effect. Our findings are consistent with strong electron-electron interactions, stabilizing an unconventional variant of the Hall effect in a three-dimensional material in the quantum limit.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2023

Valley-Tunable Even-Denominator Fractional Quantum Hall State in the Lowest Landau Level of an Anisotropic System

Fractional quantum Hall states (FQHSs) at even-denominator Landau level filling factors (v) are of prime interest as they are predicted to host exotic, topological states of matter. Here, we report here the observation of a FQHS at v = 1/2 in a two-dimensional electron system of exceptionally high quality, confined to a wide AlAs quantum well, where the electrons can occupy multiple conduction-band valleys with an anisotropic effective mass. The anisotropy and multivalley degree of freedom offer an unprecedented tunability of the v = 1/2 FQHS as we can control both the valley occupancy via the application of in-plane strain, and the ratio between the strengths of the short- and long-range Coulomb interaction by tilting the sample in the magnetic field to change the electron charge distribution. Thanks to this tunability, we observe phase transitions from a compressible Fermi liquid to an incompressible FQHS and then to an insulating phase as a function of tilt angle. We find that this evolution and the energy gap of the v = 1/2 FQHS depend strongly on valley occupancy.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Conditional quantum plasmonic sensing

The possibility of using weak optical signals to perform sensing of delicate samples constitutes one of the main goals of quantum photonic sensing. Furthermore, the nanoscale confinement of electromagnetic near fields in photonic platforms through surface plasmon polaritons has motivated the development of highly sensitive quantum plasmonic sensors. Despite the enormous potential of plasmonic platforms for sensing, this class of sensors is ultimately limited by the quantum statistical fluctuations of surface plasmons. Indeed, the fluctuations of the electromagnetic field severely limit the performance of quantum plasmonic sensing platforms in which delicate samples are characterized using weak near-field signals. Furthermore, the inherent losses associated with plasmonic fields levy additional constraints that challenge the realization of sensitivities beyond the shot-noise limit. Here, we introduce a protocol for quantum plasmonic sensing based on the conditional detection of plasmons. We demonstrate that the conditional detection of plasmonic fields, via plasmon subtraction, provides a new degree of freedom to control quantum fluctuations of plasmonic fields. This mechanism enables improvement of the signal-to-noise ratio of photonic sensors relying on plasmonic signals that are comparable to their associated field fluctuations. Consequently, the possibility of using weak plasmonic signals to sense delicate samples, while preserving the sample properties, has important implications for molecule sensing, and chemical detection.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2021

Thickness-independent transport in thin (001)-oriented cadmium arsenide films

The three-dimensional Dirac semimetal is a parent phase for a variety of topological phases that can be generated by tuning parameters in material growth or device operation. Notably, it has recently been found that cadmium arsenide, which is ordinarily a three-dimensional Dirac semimetal, can nevertheless realize a three-dimensional topological insulator in (001)-oriented films about 50-nm thick. In this work, we study the quantum Hall effect in thin (001)-oriented cadmium arsenide films, their thickness ranging from 12 to 24 nm. When the carrier density is kept approximately constant across the different films, quantum transport reveals an identical underlying picture. The result is shown to be consistent with the transport's origin in the surface states of a three-dimensional topological insulator, but problematic for a perspective in which the quantum Hall effect originates from the confined subbands of the bulk band structure. As a result, these thin-film results complement previous studies of the quantum Hall effect in 50-nm-thick films.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Design of AlGaN-Zn(Si,Ge)N2 quantum wells for high-efficiency ultraviolet light emitters

The effect of inserting a nm-scale layer of Zn(Si,Ge)N2 into an AlGaN quantum well structure designed for light emission in the wavelength range from 255 to 305 nm is investigated here. The enhanced confinement of the hole within the quantum well results in an enhancement of the overlap of the hole and electron wave functions, resulting in an enhancement of the radiative recombination rate. In this theoretical calculation, for emission at a 270 nm wavelength, the enhancement in the wavefunction overlap can reach a factor of 7 when compared to an AlGaN quantum well device specifically engineered for optimal emission at the identical wavelength. Increases of almost an order of magnitude in both the peak spontaneous emission intensity and the radiative recombination rate are predicted. The peak emission wavelength can be tuned from 255 to 305 nm by adjusting the width and/or the composition of the inserted layer. The proposed structures provide a route to higher efficiency ultraviolet practical light emitting diodes and lasers.

Physics↗
DOE OSTI2025

Impossibility of obtaining time-independent, three-dimensional, spherically symmetric densities of confined systems of relativistically moving constituents

The quantum-mechanical definition of probability, the uncertainty principle, and Poincaré invariance provide strong basic restrictions on the ability to define spatial densities associated with form factors describing the properties of confined systems of relativistically moving constituents. Despite this, many papers ignore one or more of these restrictions. Here I show how to obtain time-independent , two-dimensional densities that are consistent with the stated restrictions. This is done using the light-front, infinite momentum frame formalism. Two-dimensional density interpretations of the axial-vector form factor and all three gravitational form factors is obtained. The resulting mass radius is smaller than the charge radius. Additionally, an expression of a two-dimensional mass density related to the trace of the energy momentum tensor is obtained. I also show that all known methods for finding three-dimensional densities—using the Breit frame, Abel transformations, Wigner distributions, and spherically symmetric wave packets with vanishing spatial extent—violate the basic restrictions in different ways. Furthermore, the use of the latter leads to densities that vanish almost everywhere in space as time increases from an initial value.

form factors↗
DOE OSTI2021

Detector thickness effects on nanosecond-gated imager response

Hybrid CMOS multi-frame imagers with exposure times down to ~2 ns have made significant impacts in high energy density physics and inertial confinement fusion research. The detector thickness is a key parameter in both detector quantum efficiency and temporal response. The Icarus hybrid CMOS imager has been fabricated with Si detector thicknesses of 8, 25, and 100 µm. The temporal response of imaging sensors with exposure time down to 2 ns has been examined and compared to directly measured photodiode current. The 100-μm thick variant displays extended features related to charge carrier collection and is more susceptible to field collapse. Here, we also demonstrate charge collection time effects on spatial response.

47 OTHER INSTRUMENTATION↗
NASA NTRS1986

High-efficiency broad-area single-quantum-well lasers with narrow single-lobed far-field patterns prepared by molecular beam epitaxy

Broad-area single-quantum-well graded-index waveguide separate-confinement heterostructure lasers were fabricated by molecular beam epitaxy. A high external quantum efficiency of 79 percent and stable, single-lobed far-field patterns with a beam divergence as narrow as 0.8 deg (1.9 times diffraction limit) for a 100 micron-wide laser were obtained under pulsed conditions.

Larsson, A.↗
DOE OSTI2020

Electrical control of spin relaxation anisotropy during drift transport in a two-dimensional electron gas

Spin relaxation was studied in a two-dimensional electron gas confined in a wide GaAs quantum well. Recently, the control of the spin relaxation anisotropy by diffusive motion was first shown in D. Iizasa et al., arXiv:2006.08253. Here, we demonstrate electrical control by drift transport in a system with two subbands occupied. The combined effect of in-plane and gate voltages was investigated using time-resolved Kerr rotation. Furthermore, the measured relaxation time presents strong anisotropy with respect to the transport direction. For an in-plane accelerating electric field along [110], the lifetime was strongly suppressed irrespective of the applied gate voltage. Remarkably, for transport along [$1\bara{1}0$], the data shows spin lifetime that was gate dependent and longer than in the [110] direction regardless of the in-plane voltage. In agreement, independent results of anisotropic spin precession frequencies are also presented. Nevertheless, the long spin lifetime, strong anisotropy and drift response seen in the data are beyond the existing models for spin drift and diffusion.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗