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It is shown that the importance of diffusion relative to drift in ion-ion recombination is a decreasing function of the separation between the ions (contrary to a common supposition). Langevin's formula for the recombination coefficient is obtained very simply using a physical model which allows for both diffusion and drift.
A microwave afterglow-mass spectrometer apparatus is used to determine the dissociative recombination coefficients for capture of electrons by H3(+) and H5(+) ions as a function of electron temperature. At an ion and neutral temperature of 240 K, the coefficient for H3(+) is found to vary slowly with the electron temperature at first, decreasing from 1.6 x 10 to the -7th cu cm/s at an electron temperature of 240 K to 1.2 x 10 to the -7th cu cm/s at an electron temperature of 500 K; at electron temperatures ranging from 500 to 3000 K, the coefficient falls as the reciprocal of the electron temperature. It is noted that the results, which have an uncertainty of + or - 20 percent, agree satisfactorily over the common energy range (0.03-0.36 eV) with the recombination cross sections determined in merged beam measurements by Auerbach et al. (1977). Attention is also given to the implication of the results for modeling planetary atmospheres and interstellar clouds.
Electron-beam scanning method suggested for determining back-surface recombination velocity, SB, of back-surface-field (BSF) solar photovoltaic cell. Recombination velocity important because smaller value correlated with smaller saturation current and therefore higher cell efficiency. Method involves analyzing short-circuit current measured while electron beam scanned along edge of cell.
A theoretical investigation of the effect of the microscopic energetics of the recombination reaction on the performance of a microwave-plasma electrothermal propulsion system is described, and the results of the analysis are presented. A series of experiments to test the concept is described and analyzed by comparison with a computer model of the recombination reaction. It is concluded that internal energy considerations are not likely to significantly affect the design of a microwave-plasma electrothermal rocket. The experimental results indicate that the microwave power is far higher than the capacity of the gas to absorb it; the cooling needed to control the energy dominates the experimental results.
A systematic and quantitative analysis is carried out to investigate the effects of the shape (point, cube, Gaussian) and size of the generation volume, the surface recombination velocity, and the diffusion length on the electron-beam-induced current (EBIC) and its derivative (DEIC). Thick homogeneously doped samples exhibiting diffusion lengths in the low micron and submicron range are considered. The results are presented in computed EBIC curves as a function of scanning distance and of the ratio true diffusion length/effective diffusion length. Shown using these curves are: (1) a simple and yet rigorous method for the determination of the true diffusion length, taking into consideration all of the factors cited above, (2) a method for the rapid determination of the surface recombination velocity, (3) the condition under which the source shape becomes insignificant, and (4) a new value for the lower limit of the diffusion length which can be determined by the EBOC technique.
A theoretical study of the influence of band-band Auger, band-trap Auger, and the ordinary Shockley-Read-Hall mechanism for carrier recombination on the open-circuit voltage VOC of a solar cell is presented. Under reasonable assumptions for the magnitude of rate constants and realistic values for trap densities, surface recombination velocities and band-gap narrowing, the maximum VOC for typical back surface field solar cells is found to lie in the range between 0.61 and 0.72 V independent of base width.
Test circuit for silicon solar cells suppresses spurious effects. New circuit increases accuracy of measurements of recombination lifetime and effective surface recombination velocity in silicon solar cell. Fast electronic switch, circuit grounds forward-biased cell so rapidly transient voltage to be measured not affected significantly.
The concept of activated recombination of atomic species on surfaces can explain the production of vibrationally and translationally excited desorbed molecular species. Equilibrium statistical mechanics predicts that the molecular quantum state distributions of desorbing molecules is a function of surface temperature only when the adsorption probability is unity and independent of initial collision conditions. In most cases, the adsorption probability is dependent upon initial conditions such as collision energy or internal quantum state distribution of impinging molecules. From detailed balance, such dynamical behavior is reflected in the internal quantum state distribution of the desorbing molecule. This concept, activated recombinative desorption, may offer a common thread in proposed mechanisms of spacecraft glow. Using molecular beam techniques and equipment available at Los Alamos, which includes a high translational energy 0-atom beam source, mass spectrometric detection of desorbed species, chemiluminescence/laser induced fluorescence detection of electronic and vibrationally excited reaction products, and Auger detection of surface adsorbed reaction products, a fundamental study of the gas surface chemistry underlying the glow process is proposed.
The significant effect of junction depletion layer recombination on the efficiency of windowed GaAs cells was demonstrated. The effect becomes more pronounced as radiation damage occurs. The depletion is considered for 1 MeV electron fluences up to 10 to the 16th power e/sq m. The cell modeling separates damage in emitter and base or buffer layers using different damage coefficients is reported. The lower coefficient for the emitter predicts less loss of performance at fluences greater than 10 to the 15th power e/sq cm. A method for obtaining information on junction recombination effects as damage proceeds is described; this enables a more complete diagnosis of damage to be made.
An inclined beams apparatus for the measurement of absolute cross sections for dielectronic recombination between free electrons and singly or multiply charged ions is described. The collision products, a photon and a lower-charge-state ion, are detected in delayed coincidence. Measurements of dielectronic recombination in C(3+) are described to illustrate the use of the apparatus and techniques. Verification of the calibrations and operation of the apparatus is demonstrated through measurements of charge transfer and electron impact excitation.
The unified view of transient methods for the determination of recombination lifetime tau and back surface recombination velocity S presented here for silicon solar cells and diodes attempts to define limitations of existing methods and to evolve improvements. The presence of sizable junction capacitance for silicon devices under forward voltage invalidates the use of conventional open-circuit voltage decay (OCVD) and reverse recovery. This led Green (1983) to his method of compensated open-circuit voltage decay, in which the addition of an external resistor shunting the solar cell partially corrects for the presence of the junction capacitance. Setting this resistance to zero produces an electrical short-circuit current-decay method, which has the advantage of enabling determination of both tau and S. In an alternate approach, one may insert the functional dependence of the junction capacitance on forward voltage. This new method, denoted by the acronym OCVDCAP, enables the determination of tau with apparently greater accuracy than that obtained by previous methods utilizing voltage transients. But OCVDCAP has in common with the previous methods that it determines tau only and has practical utility only for determining tau of long-base devices. This means that it is useful only for thick base regions. In principle, however, it has an advantage over short-circuit current decay: it requires only pressure contacts, not ohmic contacts, and therefore may be used to determine tau after key processing steps in manufacturing.
An improved measurement system for electrical short-circuit current decay is presented that extends applicability of the method to silicon solar cells having an effective lifetime as low as 1 microsec. The system uses metal/oxide/semiconductor transistors as voltage-controlled switches. Advances in theory developed here increase precision and sensitivity in the determination of the minority-carrier recombination lifetime and recombination velocity. A variation of the method, which exploits measurements made on related back-surface field and back-ohmic contact devices, further improves precision and sensitivity. The improvements are illustrated by application to 15 different silicon solar cells.
Detailed shock calculations are presented which demonstrate that fast dissociative shocks in molecular clouds produce detectable radio recombination lines and continuum lines, in addition to optical and infrared recombination lines. The theoretical results are applied to outflows from young stellar objects; bipolar flows are treated as massive, radiative winds. The calculations support Hasegawa and Akabane's (1984) interpretation of the H51-alpha line from Orion-KL as being due to a shock, and are consistent with the two-shock model of Chernoff, Hollenbach, and McKee (1982).
The intensities of recombination lines formed in extended, optically thim, photoionized plasmas such as those found in PN, H II regions, and winds of certain hot stars are an important source of information on chemical abundances and can sometimes provide estimates of electron temperature. In this paper, the intensities of the recombination lines of C VI, N VII, and O VIII are calculated, accounting for both electron and heavy particle collisions and assuming case B of Baker and Menzel. The computational procedure is explained. The intensities of lines formed by transitions n(u) - n(l) are tabulated for n(u) of 50 or less, n(l) of 29 or less, at log N(e) = 4(1)13 and 10 values of electron temperature in the interval 10,000 K to 500,000 K.
A stationary collisional-radiative model including both inelastic electron-atom and atom-atom collisions is used to examine nonequilibrium weakly ionized argon plasmas with atomic densities 10 to the 16th to 10 to the 20th/cu cm, temperatures below 6000 K, and with different degrees of radiation trapping. It is shown that three-body atomic recombination becomes important at high particle densities. Comparison is made between the present approach and Thomson's theory for atomic recombination.
The intersubband-Auger-recombination time of electrons under population-inversion conditions in a single quantum well is calculated by taking into account momentum- and energy-conservation rules, and by employing Fermi-Dirac statistics. The screened matrix element of the electron-electron interaction and the overlap integral are calculated for an infinitely deep quantum well. The results are in a good agreement with published experimental data. As a major nonradiative process, the Auger recombination is related to threshold current of infrared lasers based on intersubband transitions in quantum-well structures. The realization of these devices and other limitations to achieving population inversion are discussed. In view of the results, development of these lasers for emission wavelengths corresponding to energies below the LO-phonon energy seems feasible.
Several mechanistic models are developed to predict recombination coefficients for use in heat shield design for reusable surface insulation (RSI) on aerobraking vehicles such as space shuttles. The models are applied over a temperature range of 300 to 1800 K and a stagnation pressure range of 0 to 3,000 Pa. A four parameter model in temperature was found to work best; however, several models (including those with atom concentrations at the surface) were also investigated. Mechanistic models developed with atom concentration terms may be applicable when sufficient data becomes available. The requirement is shown for recombination experiments in the 300 to 1000 K and 1500 to 1850 K temperature range, with deliberate concentration variations.
Results from research on catalytic recombination of CO-O2 for stable closed-cycle operation of CO2 lasers hold much promise for a variety of technology transfer. Expansion of CO2 laser remote sensing applications toward chemical detection and pollution monitoring would certainly be expected. However, the catalysts themselves may be especially effective in low-temperature oxidation of a number of chemicals in addition to CO. It is therefore of interest to compare the CO-O2 catalysts with chemical systems designed for chemical sensing, air purification and process catalysis. Success in understanding the catalytic mechanisms of the recombination of CO-O2 could help to shed light on how catalyst systems operate. New directions in low-temperature oxidation catalysts, coatings for chemical sensors and sorbents for air purification could well emerge.