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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 307 records · Page 17
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Inverted metamorphic GaInAs solar cell grown by dynamic hydride vapor phase epitaxy

We present an inverted metamorphic rear heterojunction ~1.0 eV GaInAs solar cell deposited by dynamic hydride vapor phase epitaxy (D-HVPE) with high growth rate. This device uses a Ga 1-x In x P compositionally graded buffer (CGB) to bridge the lattice constant gap between the GaAs substrate and the Ga0.71In0.29As emitter layer. High-resolution x-ray diffraction and transmission electron microscopy confirm that the Ga 0.71 In 0.29 As emitter is grown lattice-matched to the in-plane lattice constant of the CGB with minimal generation of defects at the GaInAs/GaInP interface. The device contains a threading dislocation density of 2.3 × 10 6 cm -2 , a level that enables high-performance minority carrier devices and is comparable to previously demonstrated GaInP CGBs grown by D-HVPE. The device exhibits an open-circuit voltage of 0.589 V under a one-sun AM1.5G illumination condition and a bandgap-voltage offset of 0.407 V, indicating metamorphic epitaxial performance nearly equal to state-of-the-art devices. We analyze the dark current of the device and determine that reducing recombination in the depletion region, which can be achieved by reducing the threading dislocation density and optimizing the device doping density, will improve the device performance. Furthermore, the CGB and device layers, comprising ~8 µm of thickness, are grown in under 10 min, highlighting the ability of D-HVPE to produce high-quality metamorphic devices of all types with the potential for dramatically higher throughput compared to present technology.

14 SOLAR ENERGY↗
DOE OSTI2025

Hole transport layer selection for stable and efficient carbon electrode-based perovskite solar cells

Perovskite solar cell (PSC) technology has achieved remarkable progress, with champion power conversion efficiencies (PCE) exceeding 26%. However, the long-term stability of PSCs remains a significant barrier to their widespread commercialization. Carbon-based PSCs (C-PSCs) have gained attention as a promising cost-effective and scalable production solution, replacing expensive metal electrodes and offering improved stability. Despite these advantages, C-PSCs face challenges in matching the performance of noble metal-based PSCs, particularly in terms of carrier extraction efficiency and reduced carrier recombination at the carbon/perovskite interface. The selection of hole transport materials (HTMs) is crucial for optimizing this interface, but comprehensive studies on HTM selection for C-PSCs are limited. This study systematically investigated three commonly used hole transport layers (HTLs): Spiro-OMeTAD, CuSCN, and PTAA. Our results show that Spiro-OMeTAD-based C-PSCs exhibit the best overall performance, achieving a PCE of 19.29%. CuSCN-based devices, while lower in efficiency (11.94% PCE), demonstrated superior stability, retaining approximately 60% of their initial performance after 500 hours under ambient conditions. PTAA-based devices achieved a PCE of 12.92% but exhibited significant degradation, maintaining only ∼35% of their original efficiency over the same duration. These findings highlight the importance of selecting HTLs that balance performance and stability and emphasize the need for further optimization to enhance the commercial viability of C-PSCs.

14 SOLAR ENERGY↗
DOE OSTI2020

Effect of Surface Texture on Pinhole Formation in SiO x -Based Passivated Contacts for High-Performance Silicon Solar Cells

High-efficiency silicon solar cells rely on some form of passivating contact structure to reduce recombination losses at the crystalline silicon surface and losses at the metal/Si contact interface. One such structure is polycrystalline silicon (poly-Si) on oxide, where heavily doped poly-Si is deposited on a SiO x layer grown directly on the crystalline silicon (c-Si) wafer. Depending on the thickness of the SiO x layer, the charge carriers can cross this layer by tunneling (<2 nm SiO x thickness) or by direct conduction through disruptions in the SiOx, often referred to as pinholes, in thicker SiO x layers (>2 nm). In this work, we study structures with tunneling- or pinhole-like SiO x contacts grown on pyramidally textured c-Si wafers and expose variations in the SiOx layer properties related to surface morphology using electron-beam-induced current (EBIC) imaging. Using EBIC, we identify and mark regions with potential pinholes in the SiO x layer. We further perform high-resolution transmission electron microscopy on the same areas, thus allowing us to directly correlate locally enhanced carrier collection with variations in the structure of the SiO x layer. Our results show that the pinholes in the SiO x layer preferentially form in different locations based on the annealing conditions used to form the device. With greater understanding of these processes and by controlling the surface texture geometry, there is potential to control the size and spatial distribution of oxide disruptions in silicon solar cells with poly-Si on oxide-type contacts; usually, this is a random phenomenon on polished or planar surfaces. Such control will enable us to consistently produce high-efficiency devices with low recombination currents and low junction resistances using this contact structure.

14 SOLAR ENERGY↗
DOE OSTI2026

Solutions to Droop and the Green Gap by Novel Carrier Injection

Long-wavelength (green, yellow, red) visible light-emitting diodes (LEDs) have historically been inefficient compared to blue light-emitters in the III-nitrides. This is due to many factors, including poor material quality due to the low growth temperatures required for high Incomposition InGaN quantum wells (QWs), and the polar nature of the III-nitride crystal structure. Spontaneous and piezoelectric polarization in the III-nitrides causes enhanced quantum-confined Stark effect (QCSE), which spatially separates electrons and holes and reduces radiative recombination (ie: light output) from the devices. Polarization in the crystal also induces additional potential barriers that electrons and holes must cross over before entering the QWs where they can recombine to emit light. Both of these polarization effects worsen as emission wavelength increases, making blue III-nitride LEDs are the most efficient and red III-nitride LEDs the least efficient. The focus of this project has been solving the latter polarization-related issue through the implementation of V-defects in long wavelength LEDs. V-defects are morphological defects which are commonly observed in c-plane III-nitrides. They are observed as hexagonal pyramid-shaped depressions on the c-plane surface, with six semipolar sidewalls. They typically form at the apex of threading dislocations (TDs) under conditions of kinetically-limited growth and low growth-temperature. They were initially thought to be detrimental to LED performance and much early work focused on eliminating them entirely from III-nitride devices. However, over the past decade work has emerged that indicate that they can improve LED performance by allowing electrons and holes to bypass the polarization-induced barriers present in the c-plane and directly enter the QWs of an LED. This is due to the semipolar nature of the V-defect sidewall: these sidewalls are thin and lack the polarization-induced barriers which prevent carriers easily moving between layers. V-defects have since been determined to be an efficient avenue by which to inject electrons and holes into the c-plane QWs where they can recombine to emit light. Throughout this project we have explored lateral injection through a variety of methods: simulation (Task 2), epitaxial growth of V-defect and non-V-defect LEDs (Tasks 1, 3, 4, 5, 6), and advanced characterization methods (Task 7). All tasks have been completed. A description of each task completed follows from this section.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
NASA NTRS1997

Non-standard amino acid recognition by Escherichia coli leucyl-tRNA synthetase

Recombinant E. coli leucyl-tRNA synthetase was screened for amino acid-dependent pyrophosphate exchange activity using noncognate aliphatic amino acids including norvaline, homocysteine, norleucine, methionine, and homoserine. [32P]-labeled reaction products were separated by thin layer chromatography using a novel solvent system and then quantified by phosphorimaging. Norvaline which differs from leucine by only one methyl group stimulated pyrophosphate exchange activity as did both homocysteine and norleucine to a lesser extent. The KM parameters for leucine and norvaline were measured to be 10 micromoles and 1.5 mM, respectively. Experiments are in progress to determine if norvaline is transferred to tRNA(Leu) and/or edited by a pre- or post-transfer mechanism.

Non-NASA Center↗
DOE OSTI2022

Characterizing W sources in the all-W wall, all-RF WEST tokamak environment

In this work, experimental data, together with interpretive modeling tools, are examined to study trends in the tungsten (W) source in the all-W environment of the WEST tokamak, both from the divertor and from the main chamber. In particular, a poloidal limiter protecting an ion cyclotron resonance heating (ICRH) antenna is used as proxy for main chamber sourcing. The key study is carried out by stepping up lower hybrid current drive (LHCD) power, as the only auxiliary power source. Limiter and divertor W sources exhibit a qualitatively similar proportionality to the total power crossing the separatrix, P SEP , although the main chamber source remains substantially lower than the divertor source, for the range of P SEP accessible in the experiments. Intepretive modeling of the limiter source is carried out with a particle-in-cell (PIC) sheath model coupled to a surface sputtering model. Oxygen is used as a proxy for all light impurity species allowing for characterization of the critical W erosion regions. To get a good quantitative match to the data, it is necessary to assume that the oxygen arrives at the surface mostly at high ionization stages (4+ and above). A separate simulation with SOLEDGE-EIRENE, constrained to measured upstream scrape-off-layer plasma profiles, gives oxygen fractional abundances that are compatible with the PIC simulation result. This is understood to arise from transport processes that dominate over recombination. Substituting the LHCD by ICRH, in an equivalent experiment, the local W source exhibits a 3× enhancement. This can be matched by the simulation, by assuming local RF electric field rectification, based on ~100 eV peak-to-peak, near-antennna electric field. This work has highlighted the particular importance of understanding the ion charge state balance of light impurities as these are most likely the dominant sputtering species in fusion devices with high-Z walls.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
NASA NTRS1985

Control of superlattice morphology in GaAs sub1-subxPsubx cascade cells

Superlattices of GaAs(1-x)p(x) are being incorporated into cascade solar cell structures in order to reduce the dislocation density in the top cells and thus reduce recombination loss and increase output voltage. For a superlattice to effectively block the propagation of dislocations its average composition must be equal to that of the layer beneath it (from efficiency considerations for a cascade cell, the average composition should be about GaAs(.7)P(.3). When superlattices of this approximate composition were grown on GaAs by MOCVD, severe distortion of the crystal layers was observed. The essential features of this distortion are nonplanar morphology and accelerated etching in regions containing excess phosphorus and clusters of dislocations. Similar observations have been made with superlattices grown with two other MOCVD systems, indicating that the problem is of fundamental technological significance, not just an artifact of one particular growth system. The nature of the distortion effect is described, and several strategies for preventing its occurrence are presented.

Blakeslee, A. E.↗
NASA NTRS2012

The Formation Environment of Jupiter's Moons

Do circumjovian disk models have conductivities consistent with the assumed accretion stresses? Broadly, YES, for both minimum-mass and gas-starved models: magnetic stresses are weak in the MM models, as needed to keep the material in place. Stresses are stronger in the gas-starved models, as assumed in deriving the flow to the planet. However, future minimum-mass modeling may need to consider the loss of dust-depleted gas from the surface layers to the planet. The gas-starved models should have stress varying in radius. Dust evolution is a key process for further study, since the recombination occurs on the grains.

planetary science↗
DOE OSTI2025

Nanopinhole-Enabled, Hole-Selective Poly-Si/SioxNy Passivating Contacts on Textured c-Si for Si Solar Cells

The next-generation silicon photovoltaics will be based on passivating electron- and hole-selective contacts with both very low interface recombination and contact resistivities. While the emerging mainstream TOPCon technology has developed excellent electron-selective poly-Si/tunneling SiOx contacts, hole-selective contacts, especially on textured surfaces, have remained a significant challenge. This contribution introduces novel high-performance hole selective poly-Si contacts on pyramid-textured Si, enabled by electrochemically produced hole transport nanopinholes in a 10 nm oxynitride passivating dielectric stack capped by p+ poly-Si. The highly passivating oxynitride layer is produced via atomic intermixing of O and N atoms in the initial SiOx/SiNy layer stack upon thermal annealing. Carrier transport is governed by nanopinhole density and size are tuned by Ag nanoparticle electrodeposition and surface attachment chemistries. This results in passivating hole contact resistivities in the m..omega..-cm2 range, while preserving interface recombination current prefactor around 5 fA/cm2.

14 SOLAR ENERGY↗
DOE OSTI2020

Thermally Activated Delayed Fluorescence Sensitization for Highly Efficient Blue Fluorescent Emitters

Hyperfluorescence is emerging as a powerful strategy to develop optoelectronic devices with high-color purity and enhanced stability. It requires appropriate integration of a sensitizer displaying efficient thermally activated delayed fluorescence (TADF) and an emitter displaying strong, narrow-band fluorescence. Here, through a joint computational and experimental approach, we provide an unprecedented, end-to-end systems level description of the electronic and optical processes that take place in a hyperfluorescent emissive layer composed of a TADF sensitizer, bis(2,5-di(9H-carbazol-9-yl)phenyl)-1,3,4-oxadiazole (4CzDPO), and a fluorescent emitter, 2,5,8,11-tetra-tert-butylperylene (TBPe). We combine the photophysical properties measurement of the emissive layer with the computational determination of the electronic properties, film morphology, and excitation transfer phenomena. The Förster resonance energy transfer rates from 4CzDPO to TBPe are on the order of 1011 s–1, considerably higher than the radiative and non-radiative recombination rates for 4CzDPO. These features ensure nearly complete energy transfer to TBPe, leading to a five-fold increase in the photoluminescence quantum yields in the 4CzDPO:TBPe system in comparison to neat films of 4CzDPO. Furthermore, our approach highlights the factors that can provide efficient energy transfer from TADF molecules to fluorescent emitters, suppress energy transfer among TADF molecules, and avoid the need for a host material within the emissive layer.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Near- and far scrape-off layer transport studies in detached, small-ELM ASDEX Upgrade discharges by means of EMC3-EIRENE

We compare various diagnostics characterizing an ASDEX Upgrade upper single-null discharge to EMC3-EIRENE simulations now including volumetric recombination and main chamber plasma-wall interaction but not yet drifts. The discharge is in a small-ELM regime and is approaching detachment due to a density ramp and nitrogen seeding. Time/ELM averaged upstream density, electron and ion temperature measurements as well as downstream ion saturation current, electron temperature and power flux measurements match the simulation within the error bars before and after reaching detachment, qualifying the code for this regime. Although the Ion Cyclotron Resonance Heating (ICRH) antenna limiters are 35 mm away from the separatrix, i.e. ten times the typical near-SOL power fall-off length $\lambda^{near}_q\ =\ $3.8 mm, they receive power fluxes of several hundreds of kW exceeding the ones to the outer target in the detached phase and strongly contribute to the particle fueling. This is explained by a substantially larger far-SOL power fall-off length $\lambda^{far}_q\ =\ $25 mm possibly caused by the small ELMs in the detached phase and the occurrence of a density shoulder.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
NASA NTRS1974

Silicon ions below 100 km: A case for SiO2(+)

Silicon ions are normally detected at altitudes above 100 km and within sporadic E layers. Traces have rarely been observed within the more permanent metallic layer near 93 km. This is surprising since silicon is an important constituent of chondritic meteorites, which ablate material in this region to provide a primary source of the metallic species observed there. Evidence is presented that Si(+)ions form SiO2(+) at the lower altitudes, and exist in this ionic state prior to recombination. A rocket launched from El Arenosillo, Spain on 3 July 1972, at 0743 LMT, during the predicted period of the Beta Taurids meteor shower, passed through a continuous belt of metallic ions that began near 85 km, ended near 115 km, and exhibited an order of magnitude increase in the form of a layer near 114 km. Si(+)was measured in and below the ledge down to 103 km. It showed a rapid decrease below this height. Radiative association is offered as a primary mechanism for SiO2(+) production.

Goldberg, R. A.↗
NASA NTRS1981

Electronic properties of deep-level defects in proton irradiated AlGaAs-GaAs solar cells

Deep level transient spectroscopy and capacitance voltage techniques as well as analysis of the forward current voltage (I-V) characteristics and SEM-EIC data were carried out for proton irradiated GaAs solar cells over a wide range of proton energies and proton fluences. Defect and recombination parameters such as defect energy levels and density, carrier capture cross sections and lifetimes as well as diffusion lengths in the undoped n-GaAs LPE layers were determined. Good correlation between these defect parameters and solar cell performance parameters was obtained for GaAs solar cells irradiated by 200 and 290 KeV protons. It was found that 200 to 290 KeV protons will produce the most defects and damages to the GaAs solar cell structure used. The influence of the low temperature (200 to 400 C) periodic thermal annealing on the deep level defects and the performance of the 200 KeV proton irradiated cells is discussed.

Li, S. S.↗
DOE OSTI2020

Embedding physics domain knowledge into a Bayesian network enables layer-by-layer process innovation for photovoltaics

Process optimization of photovoltaic devices is a time-intensive, trial-and-error endeavor, which lacks full transparency of the underlying physics and relies on user-imposed constraints that may or may not lead to a global optimum. Herein, we demonstrate that embedding physics domain knowledge into a Bayesian network enables an optimization approach for gallium arsenide (GaAs) solar cells that identifies the root cause(s) of underperformance with layer-by-layer resolution and reveals alternative optimal process windows beyond traditional black-box optimization. Our Bayesian network approach links a key GaAs process variable (growth temperature) to material descriptors (bulk and interface properties, e.g., bulk lifetime, doping, and surface recombination) and device performance parameters (e.g., cell efficiency). For this purpose, we combine a Bayesian inference framework with a neural network surrogate device-physics model that is 100× faster than numerical solvers. With the trained surrogate model and only a small number of experimental samples, our approach reduces significantly the time-consuming intervention and characterization required by the experimentalist. As a demonstration of our method, in only five metal organic chemical vapor depositions, we identify a superior growth temperature profile for the window, bulk, and back surface field layer of a GaAs solar cell, without any secondary measurements, and demonstrate a 6.5% relative AM1.5G efficiency improvement above traditional grid search methods.

14 SOLAR ENERGY↗
DOE OSTI2022

Efficient monolithic all-perovskite tandem solar modules with small cell-to-module derate

All-perovskite tandem solar modules are promising to reduce the cost of photovoltaic systems with their high efficiency and solution fabrication, but their sensitivity to air still imposes a great challenge. Here a hot gas-assisted blading method is developed to accelerate the perovskite solidification, forming compact and thick narrow bandgap (NBG) perovskite films. Adding a reduction agent into NBG films followed by a short period of air exposure and a post-fabrication storage surprisingly increases carrier recombination lifetime and enables laser scribing in ambient conditions without obvious loss of device performance. This combination suppresses tin and iodide oxidation and forms a thin SnO 2 layer on the NBG film surface. Monolithic all-perovskite tandem solar modules showed a champion efficiency of 21.6% with a 14.3 cm 2 aperture area, corresponding to an active area efficiency of 23.0%. Lastly, the very small cell-to-module derate of 6.5% demonstrates the advantage of a tandem monolithic structure for solar modules.

14 SOLAR ENERGY↗
NASA NTRS2011

n-B-pi-p Superlattice Infrared Detector

A specially designed barrier (B) is inserted at the n-pi junction [where most GR (generation-recombination) processes take place] in the standard n-pi-p structure to substantially reduce generation-recombination dark currents. The resulting n-Bpi- p structure also has reduced tunneling dark currents, thereby solving some of the limitations to which current type II strained layer superlattice infrared detectors are prone. This innovation is compatible with common read-out integrated circuits (ROICs).

Ting, David Z.↗
NASA NTRS2008

The Sheath Transport Observer for the Redistribution of Mass (STORM) Image

All of the solar wind energy that powers magnetospheric processes passes through the magnetosheath and magnetopause. Global images of the magnetosheath and magnetopause boundary layers will resolve longstanding controversy surrounding fundamental phenomena that occur at the magnetopause and provide information needed to improve operational space weather models. Recent developments showing that soft X-rays (0.15-1 keV) result from high charge state solar wind ions undergoing charge exchange recombination through collisions with exospheric neutral atoms has led to the realization that soft X-ray imaging can provide global maps of the high-density shocked solar wind within the magnetosheath and cusps, regions lying between the lower density solar wind and magnetosphere. We discuss an instrument concept called the Sheath Transport Observer for the Redistribution of Mass (STORM), an X-ray imager suitable for simultaneously imaging the dayside magnetosheath, the magnetopause boundary layers, and the cusps.

Kuntz, Kip↗
NASA NTRS2010

The Sheath Transport Observer for the Redistribution of Mass (STORM) Imager

All of the solar wind energy that powers magnetospheric processes passes through the magnetosheath and magnetopause. Global images of the magnetosheath and magnetopause boundary layers will resolve longstanding controversies surrounding fundamental phenomena that occur at the magnetopause and provide information needed to improve operational space weather models. Recent developments showing that soft X-rays (0.15-1 keV) result from high charge state solar wind ions undergoing charge exchange recombination through collisions with exospheric neutral atoms has led to the realization that soft X-ray imaging can provide global maps of the high-density shocked solar wind within the magnetosheath and cusps, regions lying between the lower density solar wind and magnetosphere. We discuss an instrument concept called the Sheath Transport Observer for the Redistribution of Mass (STORM), an X-ray imager suitable for simultaneously imaging the dayside magnetosheath, the magnetopause boundary layers, and the cusps.

Collier, Michael R.↗