Study of semiconductor heterojunctions of zinc selenide, gallium arsenide, and germanium
Fabrication and properties of gallium arsenide and zinc selenide junctions with germanium, and of gallium arsenide-zinc selenide heterojunctions
Feucht, D. L.↗
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Diamondlike carbon films on semiconductors for insulated-gate technology
MIS structures are fabricated on p-type InP, GaAs, and Si substrated by direct ionization of 25-percent CH4 in Ar and ion-beam deposition of 70-nm-thick diamondlike films, followed by application of Al gate electrodes and ohmic contacts. The films are found to have bandgap 0.9-1.1 eV, resistivity 8.1 Mohm cm, breakdown field strength 1 MV/cm, and density 1.8 g/cu cm, to be thermally stable up to 400 C, and to undergo rapid decomposition above 450 C. The electrical properties of the MIS structures are significantly improved by sputter cleaning the substrates with a 1-keV 2-mA/sq cm Ar beam for 2 min at 300 microtorr prior to C-film deposition. The resulting structures have fixed insulator charge number densities 4 x 10 to the 12th/sq cm (InP), 7.5 x 10 to the 12th/sq cm (GaAs), and 9 x 10 to the 11th/sq cm (Si) and interface state densities (5, 200, and 0.5) x 10 to the 12th/ sq cm eV, respectively. It is suggested that the low optical bandgap and resistivity of the C films and the high insulator-charge and interface-state densities make them unstable as gate dielectrics for microelectronics.
Kapoor, V. J.↗
Flat-plate solar array project: Experimental process system development unit for producing semiconductor-grade silicon using the silane-to-silicon process
The engineering design, fabrication, assembly, operation, economic analysis, and process support research and development for an Experimental Process System Development Unit for producing semiconductor-grade silicon using the slane-to-silicon process are reported. The design activity was completed. About 95% of purchased equipment was received. The draft of the operations manual was about 50% complete and the design of the free-space system continued. The system using silicon power transfer, melting, and shotting on a psuedocontinuous basis was demonstrated.
Source record↗
Chemical Gas Sensors for Aeronautic and Space Applications
Aeronautic and space applications require the development of chemical sensors with capabilities beyond those of commercially available sensors. Two areas of particular interest are safety monitoring and emission monitoring. In safety monitoring, detection of low concentrations of hydrogen at potentially low temperatures is important while for emission monitoring the detection of nitrogen oxides, hydrogen, hydrocarbons and oxygen is of interest. This paper discusses the needs of aeronautic and space applications and the point-contact sensor technology being developed to address these needs. The development of these sensors is based on progress in two types of technology: (1) Micromachining and microfabrication technology to fabricate miniaturized sensors. (2) The development of high temperature semiconductors, especially silicon carbide. The detection of each type of gas involves its own challenges in the fields of materials science and fabrication technology. The number of dual-use commercial applications of this microfabricated gas sensor technology make this general area of sensor development a field of significant interest.
Hunter, Gary W.↗
Advanced 3-V semiconductor technology assessment
Components required for extensions of currently planned space communications systems are discussed for large antennas, crosslink systems, single sideband systems, Aerostat systems, and digital signal processing. Systems using advanced modulation concepts and new concepts in communications satellites are included. The current status and trends in materials technology are examined with emphasis on bulk growth of semi-insulating GaAs and InP, epitaxial growth, and ion implantation. Microwave solid state discrete active devices, multigigabit rate GaAs digital integrated circuits, microwave integrated circuits, and the exploratory development of GaInAs devices, heterojunction devices, and quasi-ballistic devices is considered. Competing technologies such as RF power generation, filter structures, and microwave circuit fabrication are discussed. The fundamental limits of semiconductor devices and problems in implementation are explored.
Nowogrodzki, M.↗
Spin–orbit coupling proximity effect in MoS 2 /Fe 3 GeTe 2 heterostructures
Layered two-dimensional (2D) magnet/semiconductor heterostructures combine spintronic and optoelectronic properties of constituent materials, leading to new magneto-optical and magnetoelectric phenomena such as spontaneous emission of helical light and enhanced Zeeman splitting in single photon emission. While prior focus was mostly on the magnetic proximity effect, where properties of 2D magnets are transferred to nonmagnetic 2D materials, the inverse effect of 2D semiconductors altering 2D magnets is much less understood. Here, we fabricated and studied van der Waals (vdW) heterostructures of 2D magnet Fe 3 GeTe 2 (FGT) and 2D semiconductor MoS 2 . With reflectance magnetic circular dichroism, we found that the coercive field of MoS 2 -covered FGT reduces compared with uncovered FGT, agreeing well with our first-principles calculations. With its strong spin–orbit coupling (SOC), MoS 2 effectively alters the crystal field of the adjacent FGT and its magnetic anisotropy. Furthermore, an unconventional two-step hysteresis loop emerges in MoS 2 /FGT as a result of the superposition of two regions of FGT: at the interface and away from the interface. Our experimental elucidation of the SOC proximity effect that MoS 2 exerts on FGT provides fundamental understanding for the rational development of 2D magnet/semiconductor heterostructures.
2D materials↗
Tunable Solid‐State Properties and Anisotropic Charge Mobility in Hydrogen‐Bonded Diketopyrrolopyrrole Polymers via Automated Device Fabrication and Characterization
The optoelectronic properties of semiconducting polymers and device performance rely on a delicate interplay of design and processing conditions. However, screening and optimizing the relationships between these parameters for reliably fabricating organic electronics can be an arduous task requiring significant time and resources. To overcome this challenge, Polybot is developed—a robotic platform within a self‐driving lab that can efficiently produce organic field‐effect transistors (OFETs) from various semiconducting polymers via high‐throughput blade coating deposition. Polybot not only handles the fabrication process but also can conduct characterization tests on the devices and autonomously analyze the data gathered, thus facilitating the rapid acquisition of data on a large scale. This work leverages the capabilities of this platform to investigate the fabrication of OFETs using hydrogen bonding‐containing semiconducting polymers. Through high‐throughput fabrication and characterization, various data trends are analyzed, and large extents of anisotropic charge mobility are observed in devices. The materials are thoroughly characterized to understand the role of processing conditions in solid state and electronic properties of these organic semiconductors. The findings demonstrate the effectiveness of automated fabrication and characterization platforms in uncovering novel structure–property relationships, facilitating refinement of rational chemical design, and processing conditions, ultimately leading to new semiconducting materials.
automated fabrication and characterization↗
Photoelectrochemical fabrication of spectroscopic diffraction gratings
Photoelectrochemical etching was demonstrated as a means of fabricating a variety of periodic structures in semiconductors. The semiconductor is used as an electrode in an electrochemical cell, and is in contact with a liquid electrolyte. When the crystal is held at a positive voltage and illuminated, etching occurs in only the illuminated regions to a depth proportional to the illumination intensity and exposure time. In Phase 1, it was determined that diffraction gratings could be produced in gallium arsenide crystals by this method, using either a scanned focused laser beam or by uniform illumination of a ruling mask defined in metal or photoresist on the crystal surface. The latter approach was determined to produce V-grooves if the mask is oriented along certain crystallographic directions. These V-grooves were produced with an exceedingly smooth crystal morphology due to the highly controllable nature of the process and the mild electrolytes involved. The results form the basis for photoelectrochemical fabrication of deep, low pitch Eschelle gratings for use in high orders in NASA spectrographic instrumentation such as the Space Telescope Imaging Spectrograph.
Rauh, R. David↗
Two-dimensional perovskite heterostructures for single crystal semiconductor devices
Two-dimensional (2D) perovskites have gained much attention lately owing to their excellent optoelectronic properties, chemical tunability, and environmental stability. Multiple methods have been devised to synthesize high quality 2D perovskite single crystals, and recent progress in fabricating its heterostructures is notable as well. In particular, with growing interest in 2D van der Waals heterostructures, 2D perovskites have become a strong candidate as a new building block for heterostructures to reveal unique physical properties across different interfaces. Until now, various heterostructure devices of 2D perovskite single crystals with other types of 2D materials such as transition metal dichalcogenides (TMDs) and graphene have been studied, which have shown intriguing results including interlayer excitons and enhanced electronic properties. Here, we introduce various synthetic approaches to realize 2D perovskite single crystals and unique characteristics of their single crystal heterostructures fabricated with precision, possessing sharp interfaces. Moreover, recent studies of semiconductor devices based on 2D perovskite single crystal heterostructures are discussed in-depth. New perspectives to further the horizon in the field of 2D perovskite heterostructures are suggested in this work including the consideration of metal–2D material van der Waals contact, application of dry transfer techniques, electric bias driven ion diffusion studies, and nanocrystal array fabrication. 2D perovskite heterostructure single crystal devices factoring in these novel perspectives will further uncover the true potential of these materials for highly efficient and stable semiconductor devices.
Physics↗
Single crystal and polycrystalline GaAs solar cells using AMOS technology
A description is given of current technology for fabricating single AMOS (antireflection-coated metal oxide semiconductor) solar cells, with attention given to thermal, plasma, and anodic oxidation, native oxide stripping, and X-ray photoelectron spectroscopy results. Some preliminary results are presented on the chemistry and electrical characterization of such cells, and the characteristics of cells fabricated on sliced polycrystalline GaAs wafers are examined. Consideration is also given to the recrystallization of evaporated Ge films for use as low-cost substrates for polycrystalline GaAs solar cells.
Stirn, R. J.↗
Low cost solar array project: Experimental process system development unit for producing semiconductor-grade silicon using silane-to-silicon process
The design, fabrication, and installation of an experimental process system development unit (EPSDU) were analyzed. Supporting research and development were performed to provide an information data base usable for the EPSDU and for technological design and economical analysis for potential scale-up of the process. Iterative economic analyses were conducted for the estimated product cost for the production of semiconductor grade silicon in a facility capable of producing 1000-MT/Yr.
Source record↗
AlGaN/GaN metal–insulator–semiconductor high electron mobility transistors (MISHEMTs) using plasma deposited BN as gate dielectric
AlGaN/GaN metal–insulator–semiconductor high electron mobility transistors (MISHEMTs) were fabricated on Si substrates with a 10 nm boron nitride (BN) layer as a gate dielectric deposited by electron cyclotron resonance microwave plasma chemical vapor deposition. The material characterization of the BN/GaN interface was investigated by X-ray photoelectric spectroscopy (XPS) and UV photoelectron spectroscopy. The BN bandgap from the B1s XPS energy loss is ~5 eV consistent with sp2 bonding. The MISHEMTs exhibit a low off-state current of 1 × 10 –8 mA/mm, a high on/off current ratio of 10 9 , a threshold voltage of –2.76 V, a maximum transconductance of 32 mS/mm at a gate voltage of –2.1 V and a drain voltage of 1 V, a subthreshold swing of 69.1 mV/dec, and an on-resistance of 12.75 Ω·mm. The interface state density (D it ) is estimated to be less than 8.49 × 10 11 cm –2 eV –1 . Gate leakage current mechanisms were investigated by temperature-dependent current–voltage measurements from 300 K to 500 K. The maximum breakdown electric field is no less than 8.4 MV/cm. Poole–Frenkel emission and Fowler–Nordheim tunneling are indicated as the dominant mechanisms of the gate leakage through the BN gate dielectric at low and high electric fields, respectively.
36 MATERIALS SCIENCE↗
Foundry-compatible high-resolution patterning of vertically phase-separated semiconducting films for ultraflexible organic electronics
Solution processability of polymer semiconductors becomes an unfavorable factor during the fabrication of pixelated films since the underlying layer is vulnerable to subsequent solvent exposure. A foundry-compatible patterning process must meet requirements including high-throughput and high-resolution patternability, broad generality, ambient processability, environmentally benign solvents, and, minimal device performance degradation. However, known methodologies can only meet very few of these requirements. Here, a facile photolithographic approach is demonstrated for foundry-compatible high-resolution patterning of known p- and n-type semiconducting polymers. This process involves crosslinking a vertically phase-separated blend of the semiconducting polymer and a UV photocurable additive, and enables ambient processable photopatterning at resolutions as high as 0.5 μm in only three steps with environmentally benign solvents. The patterned semiconducting films can be integrated into thin-film transistors having excellent transport characteristics, low off-currents, and high thermal (up to 175 °C) and chemical (24 h immersion in chloroform) stability. Moreover, these patterned organic structures can also be integrated on 1.5 μm-thick parylene substrates to yield highly flexible (1 mm radius) and mechanically robust (5,000 bending cycles) thin-film transistors.
36 MATERIALS SCIENCE↗
Nanophotonic waveguide chip-to-world beam scanning
A seamless chip-to-world photonic interface enables broad advancements in optical ranging, display, communication, computation and quantum information science. The ideal solution enables two-dimensional scanning of a diffraction-limited beam from anywhere on a photonic integrated circuit to a large number of resolvable spots. Current beam-scanning technologies are limited by a fundamental trade-off: photonic-integrated-circuits with diffractive optics offer scalability but have poor mode quality, whereas inertially limited micromechanical scanners provide high-quality beams but lack scalable integration. Here we report a photonic ski-jump—a nanoscale waveguide monolithically integrated on a piezoelectric cantilever—to overcome these limitations. It passively curls ~90° out-of-plane within a less-than-0.1 mm 2 footprint, emits a submicrometre, broadband diffraction-limited beam, and exhibits kilohertz-rate mechanical resonances with quality factors of over 10,000. Fabricated in a volume complementary metal–oxide–semiconductor (CMOS) foundry, our device enables scalable two-dimensional beam scanning. Driven on-resonance at CMOS-level voltages, it achieves a footprint-adjusted spot rate of 68.6 mega spots s –1 mm–², exceeding state-of-the-art micro-electro-mechanical systems mirrors by more than 50-fold, which is sufficient for one million pixels at 100 Hz from an approximately 1.5 mm diameter footprint. We demonstrate full-colour image and video projection, and single-photon initialization and readout from silicon vacancy centres in diamond. Finally, by demonstrating uniformity across a 64 ski-jump array, we establish a pathway to achieving greater than one gigaspot resolution at kilohertz rates within a sub-5-cm-diameter footprint, creating a seamless optical pipeline between integrated photonic processors and the free-space world.
Displays↗
Boosting the External Quantum Efficiency of AlGaN-Based Metal–Semiconductor–Metal Ultraviolet Photodiodes by Electrode Geometry Variation
Fast aluminum-gallium-nitride–based metal–semiconductor–metal ultraviolet photodiodes were successfully designed, fabricated, and characterized using conventional photolithography techniques. Various electrode geometries were fabricated to investigate the influence of metal contact shapes on the device performance indices with emphasis on the response speed and bias-voltage–independent efficiency. Furthermore, based on the independently measured Hall mobility and electric field, we evaluated the carrier transit time of the devices as 1.31 ps with bias-voltage–independent external quantum efficiency of 1198% in photoconductive mode at 19.5 V and 70% at 60 V for n -doped and intrinsic devices, respectively.
42 ENGINEERING↗
Scaling comb-driven resonator-based DWDM silicon photonic links to multi-Tb/s in the multi-FSR regime
The use of chip-based micro-resonator Kerr frequency combs in conjunction with dense wavelength-division multiplexing (DWDM) enables massively parallel intensity-modulated direct-detection data transmission with low energy consumption. Resonator-based modulators and filters used in such systems can limit the number of usable wavelength channels due to practical constraints on the maximum achievable free spectral range (FSR). In this work, we introduce the design of multi-Tb/s comb-driven resonator-based silicon photonic links by leveraging the multi-FSR regime. We demonstrate the viability of the link architecture with yield estimates that are supported by extensive wafer-scale measurements of 704 micro-resonators fabricated in a commercial complementary metal–oxide–semiconductor foundry. We show that a 2.80 Tb/s link is realizable with a ≥6 σ yield (∼99.999%), and that aggregate bandwidths of 3.76 Tb/s and 4.72 Tb/s are possible if yield targets are relaxed (3 σ and 1 σ , respectively). All designs represent a 1.94−3.28× boost to aggregate link bandwidth while maintaining BER≤10 −10 performance, with a theoretical bandwidth of 10.51 Tb/s being possible for sufficiently robust resonators. We use high-speed BER measurements to inform co-optimization of data rate and aggressor spacing ( λ ag ), limiting any additional loss-based power penalties to off-resonance insertion loss (IL) and routing loss. This work demonstrates that, through the multi-FSR regime, there is a clear path toward Kerr comb-driven ultra-broadband, high bandwidth silicon photonic links that can support next-generation data centers and high-performance computers.
James, Aneek (ORCID:0000000262527807)↗
High Quality Doping of GaN Through Transmutation Processing
This project led to several outstanding achievements: - Computational modeling of nuclear reactions, including estimates of the production ratio and doping concentration using TALYS 1.96 based on nuclear reactions in GaN induced by gamma-ray and protons. For photonuclear transmutation doping, simulations proved that Zn/Ge ratio with 40 MeV is higher than the other energies. - Proton transmutation doping was shown to be a potential nuclear source to fabricate p-type gallium-based semiconductor materials, examined during new irradiations with Oak Ridge National Laboratory and Brookhaven National Laboratory (in 200 MeV H - –Linac). - Patent disclosure to the University of Missouri-Columbia about healing effects in GaN by radiations. - Zn-doped p-type GaN through photonuclear transmutation doping process. - The PIs made an oral presentation on the p-type characteristics of Zn-doped GaN at the Materials Research Society Fall meeting in Boston. - The last irradiation process was in progress in collaboration with Argonne National Laboratory.
36 MATERIALS SCIENCE↗
Detector Performance on Surface Passivation and its Long-Term Stability
Surface passivation is an ideal technique to prepare the surfaces of fabrication Cadmium Zinc Telluride (CZT) and related semiconductor devices such as Cadmium Zinc Tellurium Selenide (CZTS). Surface passivation techniques reduce the effects of aging in the detector [1]. Surface performance effects on material performance can result in fluctuations in energy resolution over time (such as periods of a year or more). The long-term stability of surface passivation with Potassium Hydroxide (KOH) was observed with measurement of 1) current (nano Amp) vs voltage (V) and 2) spectral response and energy resolution throughout the years. Three CZTS detector samples of M2, M3, and M4 were examined using a photomultiplier tube and voltage amplifier. The Bridgman technique is used to grow the CZTS used in this study.
Johnson, Kirsten [Morgan State Univ., Baltimore, M↗