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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 307 records · Page 17
All sourcesNASA NTRSDOE OSTI
NASA NTRS1985

Theory of the high base resistivity n(+)pp(+) silicon solar cell and its application to radiation damage effects

Particulate radiation in space is a principal source of silicon solar cell degradation, and an investigation of cell radiation damage at higher base resistivities appears to have implication toward increasing solar cell and, therefore, useful satellite lifetimes in the space environment. However, contrary to expectations, it has been found that for cells with resistivities of 84 and 1250 ohm cm, the radiation resistance decreases as cell base resistivity increases. An analytical solar-cell computer model was developed with the objective to determine the reasons for this unexpected behavior. The present paper has the aim to describe the analytical model and its use in interpreting the behavior, under irradiation, of high-resistivity solar cells. Attention is given to boundary conditions at the space-charge region edges, cell currents, cell voltages, the generation of the theoretical I-V characteristic, experimental results, and computer calculations.

Goradia, C.↗
NASA NTRS1991

Reverse bias voltage testing of 8 cm x 8cm silicon solar cells

A study is described of the reverse I-V characteristics of the largest space qualified silicon solar cells currently available (8 x 8 cm) and of reverse bias voltage (RBV) testing performed on these cells. This study includes production grade cells, both with and without cover glass. These cells span the typical output range seen in production. Initial characteristics of these cells are measured at both 28 and 60 C. These measurements show weak correlation between cell output and reverse characteristics. Analysis is presented to determine the proper conditions for RBV stress to simulate shadowing effects on a particular array design. After performing the RBV stress the characteristics of the stressed cells are remeasured. The degradation in cell performance is highly variable which exacerbates cell mismatching over time. The effect of this degradation on array lifetime is also discussed. Generalization of these results to other array configurations is also presented.

Woike, T.↗
NASA NTRS1986

High-efficiency silicon solar cells - Development, current issues and future directions

This paper provides a review of material, process, and design considerations that are essential for achieving high-efficiency silicon solar cells. It describes an approach that resulted in 18.0-18.5-percent-efficient cells on low-resistivity float-zone silicon material. It is shown experimentally that a combination of surface passivation and double-layer antireflection coating can provide 2-3 percent (absolute) improvement in cell efficiency provided the material, process and cell design are carefully selected.

Rohatgi, A.↗
NASA NTRS1972

Results of a real-time irradiation of lithium P/N and conventional N/P silicon solar cells.

Eight types of lithium-diffused P/N and three types of conventional 10 ohm-cm N/P silicon solar cells were irradiated at four different temperatures with a strontium-90 radioisotope at a rate typical of that expected in earth orbit. The six-month irradiation confirmed earlier accelerator results, showed that certain cell types outperform others at the various temperatures, and, in general, verified the recent improvements and potential usefulness of lithium solar cells. The experimental approach and statistical methods and analyses employed yielded increased confidence in the validity of the results. Injection level effects were observed to be significant.

Reynard, D. L.↗
NASA NTRS1983

Relationship between the blue response and open-circuit voltage of high performance silicon solar cells

The relationship between the response at blue wavelengths and the open-circuit voltage of high performance silicon solar cells with a virtually 'transparent' emitter is analyzed. It is shown that a one-dimensional cell model cannot simultaneously model the optical collection properties and operating characteristics of such cells. The analysis highlights the importance of surface conditions and shows that previous conclusions regarding bounds on Auger coefficients imposed by correlating these parameters must be treated with caution.

Green, M. A.↗
NASA NTRS1979

Silicon Solar Cell Process Development, Fabrication and Analysis, Phase 1

Solar cells from RTR ribbons, EFG (RF and RH) ribbons, dendritic webs, Silso wafers, cast silicon by HEM, silicon on ceramic, and continuous Czochralski ingots were fabricated using a standard process typical of those used currently in the silicon solar cell industry. Back surface field (BSF) processing and other process modifications were included to give preliminary indications of possible improved performance. The parameters measured included open circuit voltage, short circuit current, curve fill factor, and conversion efficiency (all taken under AM0 illumination). Also measured for typical cells were spectral response, dark I-V characteristics, minority carrier diffusion length, and photoresponse by fine light spot scanning. the results were compared to the properties of cells made from conventional single crystalline Czochralski silicon with an emphasis on statistical evaluation. Limited efforts were made to identify growth defects which will influence solar cell performance.

Yoo, H. I.↗
NASA NTRS1985

Use of low energy hydrogen ion implants in high efficiency crystalline silicon solar cells

This program is a study of the use of low energy hydrogen ion implantation for high efficiency crystalline silicon solar cells. The first quarterly report focuses on two tasks of this program: (1) an examination of the effects of low energy hydrogen implants on surface recombination speed; and (2) an examination of the effects of hydrogen on silicon regrowth and diffusion in silicon. The first part of the project focussed on the measurement of surface properties of hydrogen implanted silicon. Low energy hydrogen ions when bombarded on the silicon surface will create structural damage at the surface, deactivate dopants and introduce recombination centers. At the same time the electrically active centers such as dangling bonds will be passivated by these hydrogen ions. Thus hydrogen is expected to alter properties such as the surface recombination velocity, dopant profiles on the emitter, etc. In this report the surface recombination velocity of a hydrogen emplanted emitter was measured.

Fonash, S. J.↗
NASA NTRS1975

High efficiency silicon solar cell review

An overview is presented of the current research and development efforts to improve the performance of the silicon solar cell. The 24 papers presented reviewed experimental and analytic modeling work which emphasizes the improvment of conversion efficiency and the reduction of manufacturing costs. A summary is given of the round-table discussion, in which the near- and far-term directions of future efficiency improvements were discussed.

Godlewski, M. P.↗
NASA NTRS1977

A first order theory of the p/+/-n-n/+/ edge-illuminated silicon solar cell at very high injection levels

A first order theory of the edge-illuminated p(+)-n-n(+) silicon solar cell under very high injection levels has been derived. The very high injection level illuminated J-V characteristic is derived for any general base width to diffusion length (W/L) ratio and it includes the minority carrier reflection by the n-n(+) high-low junction. The beneficial effects of the high-low junction are shown to be significant until extremely high injection levels are reached. The theoretical dependencies of Jsc and Voc on temperature, incident intensity, and base resistivity are derived and discussed in detail. Some experimental results are given and these are discussed in relation to the theory.

Goradia, C.↗
NASA NTRS1979

Fracture strength of silicon solar cells

A test program was developed to determine the nature and source of the flaw controlling the fracture of silicon solar cells and to provide information regarding the mechanical strength of cells. Significant changes in fracture strengths were found in seven selected in-process wafer-to-cell products from a manufacturer's production line. The fracture strength data were statistically analyzed and interpreted in light of the exterior flaw distribution of the samples.

Chen, C. P.↗
NASA NTRS1981

Measurement of surface recombination velocity for silicon solar cells using a scanning electron microscope with pulsed beam

The role of surface recombination velocity in the design and fabrication of silicon solar cells is discussed. A scanning electron microscope with pulsed electron beam was used to measure this parameter of silicon surfaces. It is shown that the surface recombination velocity, s, increases by an order of magnitude when an etched surface degrades, probably as a result of environmental reaction. A textured front-surface-field cell with a high-low junction near the surface shows the effect of minority carrier reflection and an apparent reduction of s, whereas a tandem-junction cell shows an increasing s value. Electric fields at junction interfaces in front-surface-field and tandem-junction cells acting as minority carrier reflectors or sinks tend to alter the value of effective surface recombination velocity for different beam penetration depths. A range of values of s was calculated for different surfaces.

Daud, T.↗
NASA NTRS1975

Efficiency of silicon solar cells as a function of base layer resistivity

This paper reports on a theoretical study of the limitations on silicon solar-cell efficiency for both n(+)-p and n(+)-p-p(+) type cells. Detailed calculations have been made of solar-cell operation using a general computer analysis program for semiconductor devices. The computer program, which simultaneously solves Poisson's equation and the electron and hole quasi-Fermi level equations, provides an accurate numerical solution of solar-cell operation without limiting assumptions or approximations. It is found that minority-carrier lifetime and heavy doping effects in the n(+) surface region present serious limitations to efficiency in low-resistivity silicon solar cells.

Dunbar, P. M.↗
NASA NTRS1980

Characterization of three types of silicon solar cells for SEPS Deep Space Mission. Volume 3: Current-voltage characteristics of spectrolab sculptured BSR/P+ (K7), BSR/P+ (K6.5) and BSR (K4.5) cells as a function of temperature and intensity

Three types of high performance silicon solar cells, sculptured BSR/P+(K7), BSR/P+(K6.5) and BSR(K4.5) manufactured by Spectrolab were evaluated for their low temperature and low intensity performance. Sixteen cells of each type were subjected to 11 temperatures and 9 intensities. The sculptured BSR/P+(K7) cells provided the greatest maximum power output both at 1 AU and at LTLI conditions. The average efficiencies of this cell were 14.4 percent at 1 SC/+25 deg C and 18.5 percent at 0.086 SC/-100 deg C.

Whitaker, A. F.↗
NASA NTRS1981

The properties of polycrystalline silicon solar cells with controlled titanium additions

By coupling the results of electrical measurements, such as spectral response, lighted and dark I-V determinations, and deep-level-transient spectroscopy with optical and laser scan photomicroscopy, the effects of grain boundaries and impurities on silicon solar cells were evaluated. Titanium, which produces two deep levels in silicon, degrades cell performance by reducing bulk lifetime and thus cell short-circuit current. Electrically active grain boundaries induce carrier recombination in the bulk and depletion regions of the solar cell. Experimental data imply a small but measurable segregation of titanium into some grain boundaries of the polycrystalline silicon containing high Ti concentration. However, for the titanium-contaminated polycrystalline material used in this study, solar cell performance is dominated by the electrically active titanium concentration in the grains. Microstructural impacts on the devices are of secondary importance

Rohatgi, A.↗