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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 307 records · Page 17
All sourcesNASA NTRSDOE OSTI
NASA NTRS1988

The effect of hydrogen on the deformation and fracture of PWA 1480

The effect of internal hydrogen on mechanical properties and fracture behavior is studied in the single-crystal nickel-base superalloy PWA 1480. In particular, plane strain fracture toughness and tensile tests have been performed in hydrogen-free samples and hydrogen-gas phase-charged samples in two different sample orientations. The mechanical properties, as well as the fracture process, were found to be very dependent on orientation. Hydrogen did not affect the yield strength but reduced the uniform tensile elongation more than 75 percent. However, hydrogen reduced the tensile reduction-in-area and the fracture toughness by only 10 percent. Cleavage of the eutectic gamma-prime, as well as the role of hydrogen trapping, will be discussed. These results will be analyzed in terms of the effects that orientation, microstructure, and hydrogen have on the fracture process.

Walston, W. S.↗
NASA NTRS1989

Flow-induced morphological instabilities due to temporally-modulated stagnation-point flow

The influence of periodically-modulated planar stagnation-point flow on the morphological stability of a directionally-solidifying interface is presently considered with a view to the effect of unsteady nonparallel flows on single-crystal growth. The modeling of the system assumes that the viscous boundary layer thickness is much greater than that of the solute boundary layer, and that the modulation frequency is much smaller than the strength of plane stagnation-point flow. The solidifying interface is either stabilized or destabilized depending on the ratio of the period of modulation to the solute-diffusion time.

Merchant, G. J.↗
NASA NTRS1990

Interferometric Measurement Of Residual Stress

Stress averaged through thickness of plate measured nondestructively. Theory of elasticity combined with laser interferometric technique into technique for measurement of residual stresses in solid objects - usually in thin, nominally-flat plates. Measurements particularly useful in inspection of wafers of single-crystal silicon for making solar cells or integrated circuits, because stresses remaining after crystal-growing process cause buckling or fracture. Used to predict deflections of plates caused by known applied loads under specified boundary condition, or to infer applied loads that cause known deflections. Also used to relate known deflections to residual stresses equivalent to stresses produced by fictitious applied loads.

Danyluk, Steven↗
NASA NTRS1990

Spectroscopic Analysis Of Insulating Crystal Fibers

New method provides rapid characterization of optical properties. Technique for determining optical properties of insulating single-crystal fibers developed and applied to sapphire, spinel, and YAIO crystalline host fibers doped with triply ionized titanium. Crystal fibers grown more rapidly and less expensively.

Buoncristiani, A. M.↗
NASA NTRS1988

Modeling and simulation of InP homojunction solar cells

Modeling and simulation of single-crystal InP homojunction solar cells has been performed using the PC-1D code. Cell design and performance have been optimized using the best available estimates of the various materials parameters. A comparison has been made of the predictions of the PC-1D model to those of other models. The optimum performance is predicted to give an efficiency approaching 21 percent at AM0. It is shown that in order to describe the performance of actual cells it is necessary to use larger values of the intrinsic carrier concentration and the surface recombination velocity (SRV) than have been reported in the literature. However, even with a near-maximum value of SRV (e.g., 10 to the 7th cm/s) it is necessary to reduce the minority carrier diffusion length in the emitter to only 0.01 micron in order to account for the relatively low quantum efficiency in the blue part of the spectrum. This indicates that improvement in the emitter bulk properties could be much more important than the SRV. Other loss mechanisms are also discussed; in particular, it is shown that recombination in the base, for good quality material, is relatively insignificant.

Yahia, A. H.↗
NASA NTRS1990

A crystallographic model for the tensile and fatigue response for Rene N4 at 982 C

An anisotropic constitutive model based on crystallographic slip theory was formulated for nickel-base single-crystal superalloys. The current equations include both drag stress and back stress state variables to model the local inelastic flow. Specially designed experiments have been conducted to evaluate the existence of back stress in single crystals. The results showed that the back stress effect of reverse inelastic flow on the unloading stress is orientation-dependent, and a back stress state variable in the inelastic flow equation is necessary for predicting inelastic behavior. Model correlations and predictions of experimental data are presented for the single crystal superalloy Rene N4 at 982 C.

Sheh, M. Y.↗
NASA NTRS1990

Growth of high quality 6H-SiC epitaxial films on vicinal (0001) 6H-SiC wafers

Previously reported growth of SiC films on SiC by chemical vapor deposition (CVD) used alpha-SiC crystal substrates. The CVD growth and evaluation of high quality 6H-SiC films on 6H-SiC wafers cut from large boules grown by the modified-sublimation process is reported. The single-crystal 6H-SiC films were grown on wafers oriented 3 to 4 deg off the (0001) plane toward the 11-20 direction. The films, up to 12 microns thick, had surfaces that were smooth and featureless. The high quality of the films was demonstrated by optical and electron microscopy, and low-temperature photoluminescence.

Powell, J. A.↗
NASA NTRS1989

The role of interfacial dislocation networks in high temperature creep of superalloys

The dislocation networks generated during high-temperature creep of several single-crystal nickel-based superalloys are analyzed. The networks continually evolve during creep at relatively low temperatures or eventually reach a more stable configuration at high temperatures. Specifically, the role of these networks in directional coarsening processes are studied, along with their formation kinetics, characteristics, and stability during creep. The results of this study combined with previous findings suggest that the directional coarsening process is strongly influenced by elastic strain energy. The dislocation networks formed during primary creep are found to be stable during all subsequent creep stages. Aspects of these dislocation networks are determined to be a product of both the applied creep stress and coherency strains.

Gabb, T. P.↗
NASA NTRS1990

Si-Ge-metal ternary phase diagram calculations

Solution crystal growth and doping conditions of Si-Ge alloys used for high-temperature thermoelectric generation are determined here. Liquid-phase epitaxy (LPE) has been successfully employed recently to obtain single-crystalline homogeneous layers of Si-Ge solid solutions from a liquid metal solvent. Knowledge of Si-Ge-metallic solvent ternary phase diagrams is essential for further single-crystal growth development. Consequently, a thermodynamic equilibrium model was used to calculate the phase diagrams of the Si-Ge-M systems, including solid solubilities, where M is Al, Ga, In, Sn, Pb, Sb, or Bi. Good agreement between calculated liquidus and solidus data and experimental DTA and microprobe results was obtained. The results are used to compare the suitability of the different systems for crystal growth (by LPE-type process).

Fleurial, J. P.↗
NASA NTRS1990

Reduced pressure MOCVD of C-axis oriented BiSrCaCuO thin films

BiSrCaCuO thin films were deposited on MgO (100) single-crystal substrates by metalorganic chemical vapor deposition at 500 C and 2 torr using fluorinated beta-diketonate complexes of Sr, Ca, and Cu and triphenylbismuth. An inverted vertical reaction chamber allowed uniform film growth over large areas (7.7 cm diameter). The as-deposited films were amorphous mixtures of oxides and fluorides; a two-step annealing protocol (750 C + 850-870 C) was developed which gives c-axis oriented films of Bi2Sr2Ca1Cu2O(x). The postannealed films showed onsets in the resistive transition of 110 K, and zero resistivity was achieved by 83 K. Critical current densities as high as 11,000 A/sq cm were obtained at 25 K.

Hamaguchi, Norihito↗
NASA NTRS1991

Silicon carbide, a semiconductor for space power electronics

After many years of promise as a high temperature semiconductor, silicon carbide (SiC) is finally emerging as a useful electronic material. Recent significant progress that has led to this emergence has been in the areas of crystal growth and device fabrication technology. High quality single-crystal SiC wafers, up to 25 mm in diameter, can now be produced routinely from boules grown by a high temperature (2700 K) sublimation process. Device fabrication processes, including chemical vapor deposition (CVD), in situ doping during CVD, reactive ion etching, oxidation, metallization, etc. have been used to fabricate p-n junction diodes and MOSFETs. The diode was operated to 870 K and the MOSFET to 770 K.

Powell, J. Anthony↗
NASA NTRS1990

1300 K compressive properties of a reaction milled NiAl-AlN composites

When B2 crystal-structure nickel aluminide is subjected to high-intensity mechanical ball milling in a liquid nitrogen bath, or 'cryomilling', an NiAl composite is obtained which contains about 10 vol pct AlN particles. This composition arises from the incorporation of N during cryomilling; during subsequent thermomechanical processing, the N reacts with Al. While compressive testing of extruded or isostatically pressed specimens at 1300 K indicated that strength at relatively fast strain rates is slightly dependent on consolidation method, slower strain rates indicate no clear dependency on densification technique: four different consolidation methods were found to yield similar creep strengths. The creep properties of NiAl-AlN are similar to those of the single-crystal Ni-base superalloy NASAIR 100.

Whittenberger, J. Daniel↗
NASA NTRS1991

Temperature dependence of hardness in yttria-stabilized zirconia single crystals

The temperature dependence of hardness and microcracking in single-crystal 9.5-mol pct-Y2O3-fully-stabilized cubic-ZrO2 was studied as a function of orientation. Crack lengths increased with increased temperature up to 500 C; above 800 C, no cracks were found, indicating an indentation brittle-to-ductile transition of about 800 C. The temperature dependence of hardness was reduced around 500 C. Etching studies to delineate the plastic zone around and below indents identified the operative slip systems. The role of dislocations and their interactions within the plastic zone on the hardness and indentation fracture behavior of cubic-ZrO2 are discussed.

Morscher, Gregory N.↗
NASA NTRS1990

Experimental approaches for improving SiGe thermoelectric efficiency at JPL

Efforts to improve the thermoelectric efficiency of silicon-germanium alloys are discussed. These efforts are essentially focused on substantially enhancing carrier concentration levels and thus increasing the power factor values of n-type materials. With the help of thermodynamic phase diagram calculations, a combination of various crystal growth and dopant saturation techniques is used for this purpose. Bulk polycrystal growth of double-doped materials is achieved by zone leveling while a new method (the traveling heater method) for high-quality single-crystal growth of SiGe is being developed. Thin films of homogeneous single-crystalline multidoped Si80Ge20 have also been successfully grown from low-temperature melts to investigate combined dopant solid solubility variations. Very high carrier concentration levels were obtained by (P+As)-combined diffusion in zone-leveled and hot-pressed materials. The good overall understanding of doping mechanisms which has been achieved should enable optimization of the thermoelectric properties over this extended carrier concentration range. Reductions in thermal conductivity are being sought by introduction of very small phonon scattering centers (inert material) in the initial powders-precursors of Si-Ge alloys. This approach should benefit both n- and p-type materials.

Borshchevsky, Alex↗
NASA NTRS1990

Peeled film GaAs solar cell development

Thin-film, single-crystal gallium arsenide (GaAs) solar cells could exhibit a specific power approaching 700 W/kg including coverglass. A simple process has been described whereby epitaxial GaAs layers are peeled from a reusable substrate. This process takes advantage of the extreme selectivity of the etching rate of aluminum arsenide (AlAs) over GaAs in dilute hydrofluoric acid. The feasibility of using the peeled film technique to fabricate high-efficiency, low-mass GaAs solar cells is presently demonstrated. A peeled film GaAs solar cell was successfully produced. The device, although fractured and missing the aluminum gallium arsenide window and antireflective coating, had a Voc of 874 mV and a fill factor of 68 percent under AM0 illumination.

Wilt, D. M.↗
NASA NTRS1990

Buried homojunction solar cells formed in p-InP during sputter deposition and hydrogen plasma processing

Although it is apparent that direct current (DC) magnetron sputter deposition of indium tin oxide (ITO) leads to the formation of a buried homojunction in single-crystal p-type InP, the actual mechanism of type conversion of the InP surface is not clear. Since sputter deposition of In2O3 has also led to high-quality cells, it appears that Sn is not the cause of type conversion. To investigate the junction formation process further, experiments involving the use of a pure hydrogen plasma have been performed, resulting in type conversion of Fe-doped InP surfaces and in solar cells with efficiencies over 16 percent (global). The results confirm that sputter deposition is not necessary to form this type of buried homojunction solar cell, and they suggest a fabrication process that may be used with other relevant photovoltaic materials.

Gessert, T. A.↗
NASA NTRS1990

23.5 percent thin-film space concentrator cells

Thin-film AlGaAs-GaAs double-heterostructure concentrator cells were fabricated which exhibit total-area conversion efficiencies as high as 23.5 percent AM0 at 100 suns, 25 C. This is one of the best space concentrators measured to date at NASA and is designed for a thin-film cell without a prismatic coverglass. This solar cell structure consists of a GaAs/AlGaAs film less than 5 micron thick mounted to a glass cover/superstrate, with coplanar back-side contacts. The coverglass is not prismatic. The CLEFT process, a method for mechanically separating epitaxial layers from their substrate, is used to process these cells into thin films. The advantages of single-crystal GaAs are thereby retained, while reducing weight and cutting cost by allowing for substrate reuse. Thin-film cells also have better thermal management capabilities and can be stacked for use in tandem structures. Cell fabrication and performance are described, and directions for further improvements are identified.

Dingle, B. D.↗
NASA NTRS1990

Dissociation of O(2-)2 defects into paramagnetic O(-) in wide band-gap insulators - A magnetic susceptibility study of magnesium oxide

The magnetic susceptibility of single-crystal MgO has been measured in the temperature range 300-1000 K, using a Faraday balance. The high-purity crystal (less than 100 ppm transition metals), grown from the melt in a H2O-containing atmosphere, was found to be paramagnetic due to the presence of defects on the O(2-) sublattice. The defects derive from OH(-) introduced into the MgO matrix by the dissolution of traces of H2O during crystal growth. The OH(-) converts into O(2-)2 and H2. Each O(2-)2 represents two coupled, spin-paired O(-) states. The observed strongly temperature-dependent paramagnetism can be described by three contributions that overlay the intrinsic diamagnetism of MgO and arise from the low level of transition-metal impurities, O(-) generated by 0(2-)2 dissociation, and O(-) states trapped by quenching from high temperatures from previous experiments.

Batllo, F.↗