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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 307 records · Page 17
All sourcesNASA NTRSDOE OSTI
NASA NTRS1987

Growth process of gamma'-particles in a liquid-quenched Ni-15 at percent Al alloy

The growth of gamma-prime particles in a supersaturated Ni-15 at% Al alloy prepared by the liquid-quench method was studied using a magnetic mass balance, transmission electron microscopy, and field ion microscopy. Three stages in the precipitation and growth of these particles are demonstrated. In the first phase, the gamma-prime phase was produced by nucleation of spinodal decomposition of the alloy. In the second stage, spherical gamma-prime particles were arranged at random in the matrix with the size independent of aging time. Then, the Al concentration in the matrix decreased with the -1/3 power of the aging time. These results suggest that the degree of ordering increases with aging time. In the third stage, the particles were coarsened with aging time. They were arranged in the matrix (100) zone and were cubic, with the cube face lying on (100). The interfacial free energy was 28.4 mJ/sq m at 873 K and 22.4 mJ/sq m at 973 K.

Tachikake, A.↗
NASA NTRS1987

Morphometrics of cellular damage in mice testis receiving X-ray and high-energy particle irradiation

Murine tests were exposed to single, low doses of either X-ray, helium, or argon radiation. Animals were sacrificed seventy-two hours later. Testes were fixed for transmission electron microscopy (TEM) and sectioned at either 60 nm for TEM observation or at 2 micron for counting using routine light microscope methods. Counts of the total population of surviving spermatogonia, including all type A cells, intermediate, and type B cells, were taken from tubule cross sections identified as Stage 6 and Stage 1 according to spermatogonial configuration. The surviving fraction of spermatogonia as compared to control, S/S sub o, was calculated for each dose. For both ions and X-rays, there was a rapid decline in survival at dose levels of .10 to .15 Gy in Stage 6 tubules. This was followed by a more gradual decrease in population. At higher doses, 0.30 Gy for argon and 0.80 Gy for helium and X-rays, the cell survival rates declined rapidly. Pre-leptotene spermatocytes in Stage 1 tubules exhibited a different survival curve indicating the extreme radio-sensitivity of type B spermatogonia. Data verify that the seminiferous tubules are composed of a heterogeneous population of cells with different radio-sensitivities and that these differences are manifested even at very low doses.

Sapp, Walter J.↗
NASA NTRS1987

Surface characterization in composite and titanium bonding: Carbon fiber surface treatments for improved adhesion to thermoplastic polymers

The effect of anodization in NaOH, H2SO4, and amine salts on the surface chemistry of carbon fibers was examined by X-ray photoelectron spectroscopy (XPS). The surfaces of carbon fibers after anodization in NaOH and H2SO4 were examined by scanning transmission electron microscopy (STEM), angular dependent XPS, UV absorption spectroscopy of the anodization bath, secondary ion mass spectrometry, and polar/dispersive surface energy analysis. Hercules AS-4, Dexter Hysol XAS, and Union Carbide T-300 fibers were examined by STEM, angular dependent XPS, and breaking strength measurement before and after commercial surface treatment. Oxygen and nitrogen were added to the fiber surfaces by anodization in amine salts. Analysis of the plasmon peak in the carbon 1s signal indicated that H2SO4 anodization affected the morphological structure of the carbon fiber surface. The work of adhesion of carbon fibers to thermoplastic resins was calculated using the geometric mean relationship. A correlation was observed between the dispersive component of the work of adhesion and the interfacial adhesion.

Devilbiss, T. A.↗
NASA NTRS1987

TEM investigation of beta-SiC grown epitaxially on Si substrate by CVD

A transmission electron microscopy study is being conducted on the microstructure of beta-SiC films grown epitaxially on 001-plane silicon by chemical vapor deposition. Observations have been made in plain view and in cross-section. A high density of stacking faults has been found in the bulk of the epilayer which are bounded by partials of the Shockley type with Burgers vectors 1/6 211-line. Cross-sectional high resolution electron microscopy of the interface has shown it to be semicoherent with misfit dislocations to accommodate the lattice parameter difference between the substrate and the epilayer. In addition to misfit dislocations, a high density of twins and some stacking faults are present in the SiC near the interface. Mechanisms for the nucleation and growth of these defects are discussed.

Chorey, C. M.↗
NASA NTRS1986

Microstructures in rapidly solidified Ni-Mo alloys

Ni-Mo alloys of compositions ranging from pure Ni to Ni-40 at. percent Mo were rapidly solidified by Chill Block Melt Spinning in vacuum and were examined by optical metallography, X-ray diffraction and transmission electron microscopy. Rapid solidification resulted in an extension of molybdenum solubility in nickel from 28 to 37.5 at. percent. A number of different phases and microstructures were seen at different depths (solidification conditions) from the quenched surface of the melt spun ribbons.

Jayaraman, N.↗
NASA NTRS1987

Structure and grain coarsening during the processing of engineering ceramics

Studies have been made of three ceramic systems (Al2O3, Y2O3/MgO, and SiC/C/B), both to explore a surface area/density diagram approach to examining the coarsening processes during sintering and to explore an alternative coarsening parameter, i.e., the grain boundary surface area (raising it at a given value of the density) and not the pore surface area; therefore, pinning of the grain boundaries by solid-solution drag is the only function evidenced by these results. The importance of such pinning even at densities as low as 75% of theoretical is linked to the existence of microstructural inhomogeneities. The early stages of sintering of Y2O3 powder have been examined using two techniques, BET surface area analysis and transmission electron microscopy. Each has given some insight into the process occurring and, used together, have provided some indication of the effect of MgO on coarsening during sintering. Attempts to further elucidate effects of MgO on the coarsening behavior of Y2O3 by the surface area/density diagram approach were unsuccessful due to masking effects of contaminating reactions during sintering and/or thermal etching. The behavior of the undoped SiC which only coarsens can be clearly distinguished by the surface area/density diagram from that of SiC/C/B which also concurrently densifies. Little additional information was obtainable by this method due to unfavorable sample etching characteristics. The advantages, disadvantages, and difficulties of application of these techniques to the study of coarsening during sintering are discussed.

Shaw, Nancy J.↗
NASA NTRS1988

Investigation of a SiC/Ti-24Al-11Nb composite

A summary of ongoing research on the characterization of a continuous fiber reinforced SiC/Ti-24Al-11Nb (at percent) composite is presented. The powder metallurgy fabrication technique is described as are the nondestructive evaluation results of the as-fabricated composite plates. Tensile properties of the SiC fiber, the matrix material, and the 0-deg SiC/Ti-24Al-11Nb composite (fibers oriented unidirectionally, parallel to the loading axis) from room temperature to 1100 C are presented and discussed with regard to the resultant fractography. The as-fabricated fiber-matrix interface has been examined by scanning transmission electron microscopy and the compounds present in the reaction zone have been identified. Fiber-matrix interaction and stability of the matrix near the fiber is characterized at 815, 985, and 1200 C from 1 to 500 hr. Measurements of the fiber-matrix reaction, the loss of C-rich coating from the surface of the SiC fiber, and the growth of the Beta depleted zone in the matrix adjacent to the fiber are presented. These data and the difference in coefficient of thermal expansion between the fiber and the matrix are discussed in terms of their likely effects on mechanical properties.

Brindley, P. K.↗
NASA NTRS1988

The high temperature creep deformation of Si3N4-6Y2O3-2Al2O3

The creep properties of silicon nitride containing 6 wt percent yttria and 2 wt percent alumina have been determined in the temperature range 1573 to 1673 K. The stress exponent, n, in the equation epsilon dot varies as sigma sup n, was determined to be 2.00 + or - 0.15 and the true activation energy was found to be 692 + or - 25 kJ/mol. Transmission electron microscopy studies showed that deformation occurred in the grain boundary glassy phase accompanied by microcrack formation and cavitation. The steady state creep results are consistent with a diffusion controlled creep mechanism involving nitrogen diffusion through the grain boundary glassy phase.

Todd, J. A.↗
NASA NTRS1987

Growth and characterization of molecular beam epitaxial GaAs layers on porous silicon

GaAs layers have been grown on porous silicon (PS) substrates with good crystallinity by molecular beam epitaxy. In spite of the surface irregularity of PS substrates, no surface morphology deterioration was observed on epitaxial GaAs overlayers. A 10-percent Rutherford backscattering spectroscopy minimum channeling yield for GaAs-on-PS layers as compared to 16 percent for GaAs-on-Si layers grown under the same condition indicates a possible improvement of crystallinity when GaAs is grown on PS. Transmission electron microscopy reveals that the dominant defects in the GaAs-on-PS layers are microtwins and stacking faults, which originate from the GaAs/PS interface. GaAs is found to penetrate into the PS layers. n-type GaAs/p-type PS heterojunction diodes were fabricated with good rectifying characteristics.

Lin, T. L.↗
NASA NTRS1987

Improved beta-SiC heteroepitaxial films using off-axis Si substrates

All beta-SiC films grown using on-axis (001) Si substrates that have been examined with transmission electron microscopy exhibit a high density of interfacial twins, stacking faults, and antiphase disorder. The antiphase boundaries can be decorated by chemical etching, sputter etching, wet oxidation, and beta-SiC growth in the presence of diborane. All traces of antiphase disorder are eliminated when the heteroepitaxial growth is carried out on vicinal (001) Si substrates that are tilted 2 deg about a 110-line axis. In addition, growth on the off-axis Si produces beta-SiC films that are significantly smoother than on-axis films. The density of stacking faults is apparently unaffected by growth on the off-axis substrates.

Powell, J. A.↗
NASA NTRS1987

Dynamic recrystallization and grain boundary migration in B2 FeAl

Transmission electron microscopy and optical microscopy were used to examine polycrystalline specimens of the B2-structured alloy FeAl strained under tension to fracture at elevated temperature. Strain-induced grain boundary migration was observed above 900 K and dynamic recrystallization was found at 1000 K and 1100 K. Little evidence of dynamic recovery was evident but some networks were formed at 1100 K.

Baker, I.↗
NASA NTRS1987

Laser induced OMCVD growth of AlGaAs on GaAs

A major factor limiting the efficiency of the GaAs-GaAlAs solar cell is the rate of recombination at the GaAs-AlGaAs interface. Evidence has been previously reported which indicates that recombination at this interface can be greatly reduced if the AlGaAs layer is grown at lower than normal temperatures. The authors examine the epitaxial growth of AlGaAs on GaAs using a horizontal OMCVD reactor and an excimer laser operating in the UV (lambda = 193 nm) region. The growth temperatures were 450 and 500 C. The laser beam was utilized in two orientations: 75 deg angle of incidence and parallel to the substrate. Film composition and structure were determined by Auger electron spectroscopy (AES) and transmission electron microscopy (TEM). Auger analysis of epilayers grown at 500 C with the laser impinging show no carbon or oxygen contamination of the epitaxial layers or interfaces. TEM diffraction patterns of these same epilayers exhibit single crystal (100) zone axis patterns.

Wilt, David M.↗
NASA NTRS1988

Studies of molecular-beam epitaxy growth of GaAs on porous Si substrates

GaAs has been grown on porous Si directly and on Si buffer layer-porous Si substrates by molecular-beam epitaxy. In the case of GaAs growth on porous Si, transmission electron microscopy (TEM) reveals that the dominant defects in GaAs layers grown on porous Si are microtwins and stacking faults, which originate from the GaAs/porous Si interface. GaAs is found to penetrate into the porous Si layers. By using a thin Si buffer layer (50 nm), GaAs penetration diminishes and the density of microtwins and stacking faults is largely reduced and localized at the GaAs/Si buffer interface. However, there is a high density of threading dislocations remaining. Both Si (100) aligned and four degree tilted substrates have been examined in this study. TEM results show no observable effect of the tilted substrates on the quality of the GaAs epitaxial layer.

Mii, Y. J.↗
NASA NTRS1988

Characterization of microcomposite polyimide films

Thermally stable microcomposite polyimide films were prepared by the homogeneous incorporation of either a soluble metal salt or a metal complex into a poly(amide-acid)/N,N-dimethylacetamide solution. The thermal processing of films solvent cast onto glass substrates and cured in an appropriate atmosphere yields films containing not only a fairly uniform dispersion of submicrometer particles, but also a new surface layer of metal or metal oxide. These polymeric systems have been characterized using X-ray photoelectron spectroscopy, Auger electron spectroscopy with depth profiling via argon ion etching, transmission electron microscopy of ultramicrotomed cross-sections, scanning electron microscopy, elemental analysis, thermal analysis, and variable temperature electrical resistivity determinations. The data from these techniques were used cooperatively to develop a model for these microcomposite polyimide films.

Rancourt, J. D.↗
NASA NTRS1988

Effect of substrate preparation on the structure and chemisorption properties of Pd/MgO model catalyst

Pd/MgO model catalysts are prepared by vapor deposition of Pd particles on MgO thin films which are deposited, at different temperatures, on UHV cleaved mica. MgO films and Pd particles are characterized in situ by Auger electron spectroscopy and energy-loss spectroscopy and ex situ by transmission electron microscopy. Succesive temperature programmed desorption (TPD) of CO shows a different evolution of the morphology of the Pd particles deposited on MgO films prepared at low and high temperature. In addition, on MgO prepared at low temperature, the smallest particles show a continuous decay of CO adsorption during TPD due to contamination by support species.

Henry, C. R.↗
NASA NTRS1988

Growth and characterization of GaAs layers on Si substrates by migration-enhanced molecular beam epitaxy

Migration-enhanced molecular beam epitaxial (MEMBE) growth and characterization of the GaAs layer on Si substrates (GaAs/Si) are reported. The MEMBE growth method is described, and material properties are compared with those of normal two-step MBE-grown or in situ annealed layers. Micrographs of cross-section view transmission electron microscopy and scanning surface electron microscopy of MEMBE-grown GaAs/Si showed dislocation densities of 10 to the 7th/sq cm. AlGaAs/GaAs double heterostructures have been successfully grown on MEMBE GaAs/Si by both metalorganic chemical vapor deposition and liquid phase epitaxy.

Kim, Jae-Hoon↗
NASA NTRS1988

Ultrasonic attenuation measurements determine onset, degree, and completion of recrystallization

Ultrasonic attenuation was measured for cold worked Nickel 200 samples annealed at increasing temperatures. Localized dislocation density variations, crystalline order and volume percent of recrystallized phase were determined over the anneal temperature range using transmission electron microscopy, X-ray diffraction, and metallurgy. The exponent of the frequency dependence of the attenuation was found to be a key variable relating ultrasonic attenuation to the thermal kinetics of the recrystallization process. Identification of this key variable allows for the ultrasonic determination of onset, degree, and completion of recrystallization.

Generazio, E. R.↗