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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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A spacecraft S-band power amplifier for Nimbus satellite is reported that achieves stability by use of moderate Q input and output circuits. The discrete component amplifier uses distributed inductance and small piston capacitors for resonance and impedance matching of the transistor to 50 ohm input and output.
A nonlinear circuit model for avalanche diodes is proposed. The model was derived by assuming that the bias dependence of the elements in a known small-signal equivalent-circuit model for existing diodes arises in a manner consistent with the theory of an idealized Read-type device. The model contains a nonlinear R-L branch, a controlled source, and a linear depletion capacitance. The model is used in the nearly linear sense to predict intermodulation distortion and gain compression in avalanche diode amplifiers. Computed results for amplifiers with existing diodes are shown to be in good agreement with experiment.
GaAs Schottky barrier varactors with a cutoff frequency of 800 GHz are used in a balanced diode-type parametric amplifier operating with a signal frequency at 7.5 GHz. The room-temperature parameters of the amplifier are a gain of 15 dB, a bandwidth of 500 MHz, and an excess noise temperature of 63 K (a noise figure of 0.86 dB).
Variation of geometric parameters, including supply area, control area, chamber length, and outlet diameter, of a large scale, modular design vortex fluid amplifier with single supply and control jets, has confirmed and extended a previously published design method, developed for vortex amplifiers with symmetric flow fields. This allows application of the method to devices which are more representative of practical, production type components.
A network is described which is suitable for realizing a low-sensitivity high-Q second-order frequency-selective amplifier for high-frequency operation. Circuits are obtained from this network which are well suited for realizing monolithic integrated circuits and which do not require any process steps more critical than those used for conventional monolithic operational and video amplifiers. A single chip version using compatible thin-film techniques for the frequency determination elements is then feasible. Center frequency and bandwidth can be set independently by trimming two resistors. The frequency selective circuits have a low sensitivity to the process variables, and the sensitivity of the center frequency and bandwidth to changes in temperature is very low.
Several 2-3 GHz amplifiers using discrete variable components have been designed and tested. A power output of 6.5 watts with 30-mw drive and 29% efficiency has been obtained from a three-stage amplifier operating at 2.25 GHz. The unit has a 3 db bandwidth of 100 MHz and is stable with respect to temperature changes, a vacuum environment, and mechanical vibration. Significant problems arising from the use of discrete components have not been encountered.
A full-wave modulator-demodulator apparatus is described including an operational amplifier having a first input terminal coupled to a circuit input terminal, and a second input terminal alternately coupled to the circuit input terminal. A circuit is ground by a switching circuit responsive to a phase reference signal and the operational amplifier is alternately switched between a non-inverting mode and an inverting mode. The switching circuit includes three field-effect transistors operatively associated to provide the desired switching function in response to an alternating reference signal of the same frequency as an AC input signal applied to the circuit input terminal.
A transistorized spectrometric amplifier with a shaper is reported that selects the shape of the frequency characteristic of the amplifying channel for which the primary frequency spectrum of the signal will pass, but where the noise spectrum is limited to the maximum. A procedure is presented for selecting the shaping circuits and their inclusion principles.
Amplifier, fabricated on single dielectric substrate, has pair of Schottky barrier varactor diodes mounted on single semiconductor chip. Circuit includes microstrip transmission line and slot line section to conduct signals. Main features of amplifier are reduced noise output and low production cost.
The contrast sensitivity of the radiographic amplifiers, both the storage type and nonstorage type, their absolute sensitivity, and the reproducibility of fabrication were investigated. The required 2-2T quality level was reached with the radiographic storage screen. The sensitivity threshold was 100 to 200 mR with 45 to 100 kV filtered X-rays. The quality level of the radiographic amplifier screen (without storage) was 4-4T; for a 6 mm (0.25 in.) thick aluminum specimen, a 1 mm (0.040 in.) diameter hole in a 0.25 mm (0.010 in.) thick penetrameter was detected. Its sensitivity threshold was 2 to 6 mR/min. The developed radiographic screens are applicable for uses in nondestructive testing.
The design and experimental measurements are described of an optically pumped far-infrared (FIR) waveguide maser; preliminary measurements on a FIR waveguide amplifier are presented. The FIR maser was found to operate satisfactorily in a chopped CW mode using either methanol (CH3OH) or acetonitrile (CH3CN) as the active molecule. Two other gases, difluoroethane and difluoroethylene, produced an unstable output with high threshold and low output power when operated in the chopped CW mode. Experimental measurements include FIR output versus cavity length, output beam pattern, output power versus pressure, and input power. The FIR output was the input to an amplifier which was constructed similar to the oscillator. An increase of 10% in output power was noted on the 118.8 microns line of methanol.
Miniature amplifier for bioelectronic instrumentation consumes only about 100 mW and has frequency response flat to within 0.5 dB from 0.14 to 450 Hz. Device consists of five thin film substrates, which contain eight operational amplifiers and seven field-effect transistor dice.
Balanced symmetrical y-axis amplifier uses zener-diode level shifting to interface operational amplifiers to high voltage bipolar output stages. Nominal voltage transfer characteristic is 40 differential output volts per input volt; bandwidth, between -3-dB points, is approximately 8 kHz; loop gain is nominally 89 dB with closed loop gain of 26 dB.
This paper presents a synthesis procedure which provides design values for broad-band amplifiers using non-uniform negative resistance devices. Employing a weighted least squares optimization scheme, the technique, based on an extension of procedures for uniform negative resistance devices, is capable of providing designs for a variety of matching network topologies. It also provides, for the first time, quantitative results for predicting the effects of parameter element variations on overall amplifier performance. The technique is also unique in that it employs exact partial derivatives for optimization and sensitivity computation. In comparison with conventional procedures, significantly improved broad-band designs are shown to result.
Variations of a low-cost amplifying linear threshold extensometer are presented in detail for high or low strain applications. Derivations of scale relationships and extraction forces are included with experimental correlations and analyses given on performance, attachment problems, gain selection, gage and base material compatibility, and zero setting techniques. Flight applications of unamplified gages on parawing deployment tests are noted. The amplified gages perform accurately in laboratory tests and further experience is needed on performance under dynamic environments.
An optically pumped regenerative submillimeter laser amplifier is described. The amplifier uses a waveguide cavity resonator, and a Fabry-Perot interferometer composed of two dielectric-coated mirrors serves as input and output port for the submillimeter signal. Use of two mirrors enabled obtaining variations of up to 6:1 in transmission by varying the mirror spacing. When the 373-micron transition in CH3CN is excited in the oscillator by the CO2 laser pump beam, the received signal with amplification is about nine times the unamplified signal.
In the present paper, the advantages and drawbacks of a multichannel amplifier operating in a vibration or acoustic facility are discussed. The configuration of the facility and the multichannel amplifier proposed is a compromise based on the particular requirements and anticipated work load in a specific case under consideration.
Performance results and design considerations are presented for an all solid-state Ku-band power amplifier which is feasible for use in PM communication systems for airborne or spacecraft transmitter applications. A six-stage GaAs FET preamplifier and a driver and balanced power amplifier utilizing GaAs IMPATT diodes operating in the injection locked oscillator mode are discussed. For high power and efficiency Schottky-Read IMPATT's with low-high-low doping profiles are employed. For improved reliability the IMPATT's incorporate a TiW barrier metallization to retard degradation of the IMPATT's. Results of accelerated life testing of the IMPATT devices are also presented.