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Results for “Anomalous Hall effect”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 325 records · Page 18
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Non-volatile electric control of magnetic and topological properties of MnBi 2 Te 4 thin films

In this letter, we propose a mechanism to control the magnetic properties of topological quantum material (TQM) by using magnetoelectric coupling: this mechanism uses a heterostructure of TQM with two-dimensional (2D) ferroelectric material, which can dynamically control the magnetic order by changing the polarization of the ferroelectric material and induce possible topological phase transitions. This concept is demonstrated using the example of the bilayer MnBi 2 Te 4 on ferroelectric In 2 Se 3 or In 2 Te 3 , where the polarization direction of the 2D ferroelectrics determines the interfacial band alignment and consequently the direction of the charge transfer. This charge transfer, in turn, enhances the stability of the ferromagnetic state of MnBi 2 Te 4 and leads to a possible topological phase transition between the quantum anomalous Hall (QAH) effect and the zero plateau QAH. Our work provides a route to dynamically alter the magnetic ordering of TQMs and could lead to the discovery of new multifunctional topological heterostructures.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Probing Quantum Anomalous Hall States in Twisted Bilayer WSe 2 via Attractive Polaron Spectroscopy

Moiré superlattices in semiconductors exhibit a rich variety of interaction-induced topological states, including quantum anomalous Hall (QAH) effects. A recent study hinted that twisted WSe 2 homobilayer (tWSe 2 ) could host a QAH state but lacked direct evidence of ferromagnetism, a key hallmark of this phase. Here, we report the first direct evidence of QAH states in tWSe 2 with spontaneous ferromagnetism. Specifically, we employ polarization-resolved attractive polaron spectroscopy on a dual-gated, 2° tWSe 2 and observe direct signatures of spontaneous time-reversal symmetry breaking at hole filling 𝜈 = 1. Together with a Chern number (𝐶) measurement via Streda formula analysis, we identify this magnetized state as a topological state, characterized by 𝐶 = 1. Furthermore, we demonstrate that these topological and magnetic properties are tunable via a finite displacement field, between a QAH ferromagnetic state and an antiferromagnetic state. Our findings position tWSe 2 as a highly versatile, stable, and optically addressable platform for investigating topological order and strong correlations in two-dimensional landscapes.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2022

Optical control of topological memory based on orbital magnetization

Under suitable conditions, some twisted graphene multilayers and transition-metal dichalcogenides become Chern insulators, exhibiting the anomalous quantum Hall effect and orbital magnetization due to spontaneous valley polarization. We study the interaction of a Chern insulator with circularly polarized light. Here, the interaction energy contains an antisymmetric term that couples to the helicity of incident light. For a two-band Chern insulator, this term is expressed as an integral involving the Berry curvature of the system. Taking advantage of this interaction, we propose an experimental protocol for switching topological memory based on orbital magnetization by circularly polarized light. Moreover, two laser beams of opposite circular polarization can nucleate domains of opposite magnetization and thus produce an optically configurable domain wall carrying topologically protected chiral edge modes.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Visualizing the out-of-plane electronic dispersions in an intercalated transition metal dichalcogenide

Layered transition metal dichalcogenides have a rich phase diagram and they feature two-dimensionality in numerous physical properties. Co 1/3 NbS 2 is one of the newest members of this family where Co atoms are intercalated into the van der Waals gaps between NbS 2 layers. Here, we study the three-dimensional electronic band structure of Co 1/3 NbS 2 using both surface and bulk sensitive angle-resolved photoemission spectroscopy. We show that the electronic bands do not fit into the rigid band shift picture after the Co intercalation. Instead, Co 1/3 NbS 2 displays a different orbital character near the Fermi level compared to the pristine NbS 2 compound and has a clear band dispersion in the k z direction despite its layered structure. Our photoemission study demonstrates the out-of-plane electronic correlations introduced by the Co intercalation, thus offering a different perspective on this compound. Finally, we propose how Fermi level tuning could lead to exotic phases such as spin density wave instability.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Disorder driven crossover between anomalous Hall regimes in Fe 3 GaTe 2

The large anomalous Hall conductivity (AHC) of the Fe 3 ⁢(Ge,Ga)⁢Te 2 compounds has attracted considerable attention. Here, we expose the intrinsic nature of the AHC in Fe 3 ⁢GaTe 2 crystals characterized by high conductivities, which show disorder-independent AHC with a pronounced value 𝜎$^{c}_{𝑥⁢𝑦}$≈ 420 Ω −1 ⁢cm −1 . In the low-conductivity regime, we observe the scaling relation 𝜎 𝑥⁢𝑦 ∝ 𝜎$^{1.6}_{𝑥⁢𝑥}$, which crosses over to 𝜎 𝑥⁢𝑦 ≃ 𝜎$^{c}_{𝑥⁢𝑦}$ as 𝜎 𝑥⁢𝑥 increases. Disorder in low-conductivity crystals is confirmed by the broadening of a first-order transition between ferromagnetism and the ferrimagnetic ground state. Through density functional theory (DFT) calculations, we reveal that the dominant sources of Berry curvature are located a few hundred meV below the Fermi energy around the Γ point. Furthermore, Fe 3⁢ GaTe 2 clearly exposes the disorder-induced crossover among distinct AHC regimes, previously inferred from measurements on different ferromagnets located on either side of the crossover region.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Light-induced anomalous Hall conductivity in the massive three-dimensional Dirac semimetal Co 3 ⁢Sn 2 ⁢S 2

Weyl semimetals can emerge from Dirac semimetals when the time-reversal or spatial-inversion symmetries are broken. Recently, it has been proposed based on Floquet theory that Dirac semimetals can be converted into Weyl semimetals even by shining circularly polarized light (CPL). Here we have investigated the possibility of such a Dirac-Weyl conversion by measuring the CPL-induced anomalous Hall conductivity (AHC) in a massive 3D Dirac semimetal Co 3 ⁢Sn 2 ⁢S 2 in the paramagnetic phase using ultrafast midinfrared pump-terahertz Faraday rotation probe spectroscopy. We find that the field-strength and driving frequency dependence of the observed AHC is well accounted for by CPL-induced nonzero Berry curvature associated with the splitting of the Dirac bands as predicted by the Floquet theory. As a result, the estimated splitting of the Dirac bands reaches about 60% of the mass gap and the calculated CPL-induced AHC quantitatively reproduces the experimental observation, demonstrating a promising route toward the realization of Floquet-Weyl states from massive Dirac semimetals.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Intrinsic Anomalous Hall Conductivity in a Nonuniform Electric Field

We study how the intrinsic anomalous Hall conductivity is modified in two-dimensional crystals with broken time-reversal symmetry due to weak inhomogeneity of the applied electric field. Focusing on a clean noninteracting two-band system without band crossings, we derive the general expression for the Hall conductivity at small finite wave vector q to order q 2 , which governs the Hall response to the second gradient of the electric field. Using the Kubo formula, we show that the answer can be expressed through the Berry curvature, Fubini-Study quantum metric, and the rank-3 symmetric tensor which is related to the quantum geometric connection and physically corresponds to the gauge-invariant part of the third cumulant of the position operator. We further compare our results with the predictions made within the semiclassical approach. By deriving the semiclassical equations of motion, we reproduce the result obtained from the Kubo formula in some limits. We also find, however, that the conventional semiclassical description in terms of the definite position and momentum of the electron is not fully consistent because of singular terms originating from the Heisenberg uncertainty principle. We thus present a clear example of a case when the semiclassical approach inherently suffers from the uncertainty principle, implying that it should be applied to systems in nonuniform fields with extra care.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Measured Potential Profile in a Quantum Anomalous Hall System Suggests Bulk-Dominated Current Flow

Ideally, quantum anomalous Hall systems should display zero longitudinal resistance. Yet in experimental quantum anomalous Hall systems elevated temperature can make the longitudinal resistance finite, indicating dissipative flow of electrons. Here, we show that the measured potentials at multiple locations within a device at elevated temperature are well-described by solution of Laplace's equation, assuming spatially-uniform conductivity, suggesting non-equilibrium current flows through the two-dimensional bulk. Extrapolation suggests that at even lower temperatures current may still flow primarily through the bulk rather than, as had been assumed, through edge modes. In conclusion, an argument for bulk current flow previously applied to quantum Hall systems supports this picture.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Disentangling the Competing Mechanisms of Light-Induced Anomalous Hall Conductivity in Three-Dimensional Dirac Semimetal

We experimentally elucidate the origin of the anomalous Hall conductivity in a three-dimensional Dirac semimetal, Cd 3 As 2 , driven by circularly polarized light. Using time-resolved terahertz Faraday rotation spectroscopy, we determine the transient Hall conductivity spectrum with special attention to its sign. Our results clearly show the dominance of direct photocurrent generation assisted by the terahertz electric field. The contribution from the Floquet-Weyl nodes is found to be minor when the driving light is in resonance with interband transitions. Here, we develop a generally applicable classification of microscopic mechanisms of light-induced anomalous Hall conductivity.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Magic Angles and Fractional Chern Insulators in Twisted Homobilayer Transition Metal Dichalcogenides

We explain the appearance of magic angles and fractional Chern insulators in twisted K-valley homobilayer transition metal dichalcogenides by mapping their continuum model to a Landau level problem. Here, our approach relies on an adiabatic approximation for the quantum mechanics of valence band holes in a layer-pseudospin field that is valid for sufficiently small twist angles and on a lowest Landau level approximation that is valid for sufficiently large twist angles. It provides a simple qualitative explanation for the nearly ideal quantum geometry of the lowest moir´e miniband at particular twist angles, predicts that topological flat bands occur only when the valley-dependent moir´e potential is sufficiently strong compared to the interlayer tunneling amplitude, and provides a convenient starting point for the study of interactions.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Structure and magnetism in epitaxial Fe 1 + x VSb nanocomposite films

The combination of ferromagnetism and semiconducting behavior offers an avenue for realizing novel spintronics and spin-enhanced thermoelectrics. Here we demonstrate the synthesis of doped and nanocomposite half-Heusler Fe 1+x VSb films by molecular beam epitaxy. For dilute excess Fe (x < 0.1), we observe a decrease in the Hall electron concentration and no secondary phases in x-ray diffraction. Magnetotransport measurements suggest weak ferromagnetism that onsets at a temperature of T c ≈ 5 K. For higher Fe content (x > 0.1), ferromagnetic Fe nanostructures precipitate from the semiconducting FeVSb matrix. The Fe/FeVSb interfaces are epitaxial, as observed by transmission electron microscopy and x-ray diffraction. Further, magnetotransport measurements suggest proximity-induced magnetism in the FeVSb from the Fe/FeVSb interfaces, or superparamagnetically coupled Fe-rich clusters, at an onset temperature of T c ≈ 20 K.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Edge magnetoplasmon dispersion and time-resolved plasmon transport in a quantum anomalous Hall insulator

A quantum anomalous Hall (QAH) insulator breaks reciprocity by combining magnetic polarization and spin-orbit coupling to generate a unidirectional transmission of signals in the absence of an external magnetic field. Such behavior makes QAH materials a good platform for the innovation of circulator technologies. However, it remains elusive as to how the wavelength of the chiral edge plasmon relates to its frequency and how the plasmon wave packet is excited in the time domain in a QAH insulator. Here, we investigate the edge magnetoplasmon (EMP) resonances in Cr-(Bi,Sb) 2 Te 3 by frequency and time domain measurements. From disk shaped samples with various dimensions, we obtain the dispersion relation of EMPs and extract the drift velocity of the chiral edge state. From the time-resolved transport measurements, we identify the velocity of the plasmon wave packet and observe a transition from the edge to bulk transport at an elevated temperature. We show that the frequency and time domain measurements are well modeled by loss from the microwave induced dissipative channels in the bulk area. Our results demonstrate that the EMP decay rate can be significantly reduced by applying a low microwave power and fabricating devices of larger diameter ≥ 100 µ m . In a R = 125 µ m sample, a nonreciprocity of 20 dB has been realized at 1.3 GHz, shining light on using QAH insulators to develop on-chip nonreciprocal devices. Published by the American Physical Society 2024

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Valley-Coherent Quantum Anomalous Hall State in AB-Stacked MoTe 2 / W S e 2 Bilayers

Moiré materials provide fertile ground for the correlated and topological quantum phenomena. Among them, the quantum anomalous Hall (QAH) effect, in which the Hall resistance is quantized even under zero magnetic field, is a direct manifestation of the intrinsic topological properties of a material and an appealing attribute for low-power electronics applications. The QAH effect has been observed in both graphene and transition metal dichalcogenide (TMD) moiré materials. It is thought to arise from the interaction-driven valley polarization of the narrow moiré bands. Here, we show that the newly discovered QAH state in AB-stacked MoTe 2 / W S e 2 moiré bilayers is not valley polarized but valley coherent. The layer- and helicity-resolved optical spectroscopy measurement reveals that the QAH ground state possesses spontaneous spin (valley) polarization aligned (antialigned) in two TMD layers. In addition, saturation of the out-of-plane spin polarization in both layers occurs only under high magnetic fields, supporting a canted spin texture. Our results call for a new mechanism for the QAH effect and highlight the potential of TMD moiré materials with strong electronic correlations and spin-orbit interactions for exotic topological states. Published by the American Physical Society 2024

2-dimensional systems↗
DOE OSTI2025

Extended quantum anomalous Hall states in graphene/hBN moiré superlattices

Electrons in topological flat bands can form new topological states driven by correlation effects. The pentalayer rhombohedral graphene/hexagonal boron nitride (hBN) moiré superlattice was shown to host fractional quantum anomalous Hall effect (FQAHE) at approximately 400 mK, triggering discussions around the underlying mechanism and role of moiré effects. In particular, new electron crystal states with non-trivial topology have been proposed. Here, in this paper, we report electrical transport measurements in rhombohedral pentalayer and tetralayer graphene/hBN moiré superlattices at electronic temperatures down to below 40 mK. We observed two more fractional quantum anomalous Hall (FQAH) states and smaller R xx values in pentalayer devices than those previously reported. In the new tetralayer device, we observed FQAHE at moiré filling factors v = 3/5 and 2/3. With a small current at the base temperature, we observed a new extended quantum anomalous Hall (EQAH) state and magnetic hysteresis, where R xy = h/e 2 and vanishing R xx spans a wide range of v from 0.5 to 1.3. At increased temperature or current, EQAH states disappear and partially transition into the FQAH liquid. Furthermore, we observed displacement field-induced quantum phase transitions from the EQAH states to the Fermi liquid, FQAH liquid and the likely composite Fermi liquid. Our observations established a new topological phase of electrons with quantized Hall resistance at zero magnetic field and enriched the emergent quantum phenomena in materials with topological flat bands.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Tunable high Néel temperature and large anomalous Hall response in antiferromagnetic Weyl semimetal Mn 3 Sn 1− x Ga x thin films

Antiferromagnetic Weyl semimetals based on Mn 3 X(X = Ge, Sn, Ga) kagome compounds exhibit the same ferromagnetic-like responses, including anomalous Hall, Nernst, and magneto-optical effects, as recently discussed for altermagnets. Driven by the Berry curvature due to Weyl fermions, these materials show a disproportionately large magnitude of electromagnetic effects even in the absence of large magnetization. For applications it is crucial to realize these responses in a wide range of temperatures both below and above 300 K. While stoichiometric Mn 3 X materials do not offer optimal performance, we show that Mn 3 Sn 1−x Ga x sputtered films with a variable composition offers a tunable Néel temperature, T N ≈ 425 ± 6–500 ± 15 K, which is crucial for device applications, together with a large tunable anomalous Hall effect. Our thin film growth method enables continuous and precise control over the film composition between x = 0 and x = 1. Through a detailed magnetization and Hall transport, we establish the magnetic phase diagram for the hexagonal Mn 3 Sn 1−x Ga x . Our results reveal an enhanced T N and antichiral magnetic phase in Ga-doped Mn 3 Sn and an enhanced anomalous Hall magnitude in Sn-doped Mn 3 Ga compared to their stoichiometric undoped forms. Our work demonstrates a route to optimize the technologically relevant antiferromagnets for various applications.

Magnetic properties and materials↗
DOE OSTI2023

Enhanced Magnetism and Anomalous Hall Transport through Two-Dimensional Tungsten Disulfide Interfaces

The magnetic proximity effect (MPE) has recently been explored to manipulate interfacial properties of two-dimensional (2D) transition metal dichalcogenide (TMD)/ferromagnet heterostructures for use in spintronics and valleytronics. However, a full understanding of the MPE and its temperature and magnetic field evolution in these systems is lacking. In this study, the MPE has been probed in Pt/WS 2 /BPIO (biphase iron oxide, Fe 3 O 4 and α-Fe 2 O 3 ) heterostructures through a comprehensive investigation of their magnetic and transport properties using magnetometry, four-probe resistivity, and anomalous Hall effect (AHE) measurements. Density functional theory (DFT) calculations are performed to complement the experimental findings. We found that the presence of monolayer WS 2 flakes reduces the magnetization of BPIO and hence the total magnetization of Pt/WS 2 /BPIO at T > ~120 K—the Verwey transition temperature of Fe 3 O 4 (T V ). However, an enhanced magnetization is achieved at T < T V . In the latter case, a comparative analysis of the transport properties of Pt/WS 2 /BPIO and Pt/BPIO from AHE measurements reveals ferromagnetic coupling at the WS 2 /BPIO interface. Our study forms the foundation for understanding MPE-mediated interfacial properties and paves a new pathway for designing 2D TMD/magnet heterostructures for applications in spintronics, opto-spincaloritronics, and valleytronics.

36 MATERIALS SCIENCE↗