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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 325 records · Page 18
All sourcesNASA NTRSDOE OSTI
NASA NTRS1980

Tailored emitter, low-resistivity, ion-implanted silicon solar cells

Open-circuit voltages as high as 0.645 V (AM0, 25 C) have been obtained by a new process developed for low-resistivity silicon. The process utilizes high-dose phosphorus implantation followed by furnace annealing and simultaneous oxide growth. The effect of the thermally grown oxide is a reduction of surface recombination velocity; the oxide also acts as a moderately efficient antireflection (AR) coating. Boron-doped, float-zone silicon with resistivities from 0.1 to 1.0 (omega)(cm) has been processed according to this sequence; results show that the highest open-circuit voltage is obtained with 0.1(omega)(cm) starting material. The effects of Auger recombination and bandgap narrowing caused by high doping concentrations in the n(+)junction region have been investigated by implanting phosphorus over a wide range of dose levels. The effects of emitter-phosphorus concentrations tailored to optimize electric fields in the emitter have also been investigated.

Minnucci, J. A.↗
NASA NTRS1980

Comparison of the early stages of condensation of Cu and Ag on Mo/100/ with Cu and Ag on W/100/

The adsorption and condensation of Cu and Ag, up to several monolayers in thickness, onto Mo(100) has been observed at pressures below 2 times 10 to the -10th torr in a study that used combined LEED, Auger, TDS (Thermal Desorption Spectroscopy), and work function measurements in a single experimental setup. The results show that Cu behaves similarly on Mo(100) and W(100) substrates, while some differences are found for Ag adsorption.

Soria, F.↗
NASA NTRS1979

Efficient solar cells by space processing

Thin films of electron beam evaporated silicon were deposited on molybdenum, tantalum, tungsten and molybdenum disilicide under ultrahigh vacuum conditions. Mass spectra from a quadrapole residual gas analyzer were used to determine the partial pressure of 13 residual gases during each processing step. Surface contamination and interdiffusion were monitored by in situ Auger electron spectrometry. The presence of phosphorus in the silicon was responsible for attaining elevated temperatures with silicide formations. Heteroepitaxial silicon growth was sensitive to the presence of oxygen during deposition, the rate and length of deposition as well as the substrate orientation.

Schmidt, F. A.↗
NASA NTRS1980

NBS: Materials measurements

Measurements in an Auger spectrometer of surface impurity concentrations on liquid gallium showed that the principle impurities were oxygen and carbon. The impurities showed a tendency to collect into plates or clumps. In Pb rich Pb-Sn off eutectic alloys, macrosegration caused by solutal convection was not reduced by vertical or horizontal fields of 0.1 T, but downward solidification virtually eliminated macrosegration in small diameter samples. Phase assemblages of selected compositions on the joints K(Fe0.5 Si-0.5) O2 -SiO2 and KFeO2 - SiO2 were determined over a large range of oxygen partial pressures and the temperature range 800 C to 1400 C.

Source record↗
NASA NTRS1980

Float zone experiments

The objectives of this work are: to determine if surface tension-driven convection in float zone experiments may be controlled by means of surface films; and if convection can be controlled, determine whether homogeneous solute distributions will be achieved in float zone solidification and whether accurate measurements of liquid diffusion coefficients may be obtained from float zone solidification experiments. Sn was chosen as a model material because it is a group IV element, chemically similar to Si and Ge and its low melting point and low vapor pressure allow Auger spectroscopy to be employed with liquid samples.

Verhoeven, J.↗
NASA NTRS1981

Surface chemistry and friction behavior of the silicon carbide (0001) surface at temperatures to 1500 deg C

X-ray photoelectron and Auger electron spectroscopy analyses and friction studies were conducted with a silicon carbide (0001) surface in contact with iron at various temperatures to 1200 or 1500 C in a vacuum of 10 to the minus 8th power Pa. The results indicate that there is a significant temperature influence on both the surface chemistry and friction properties of silicon carbide. The principal contaminant of adsorbed amorphous carbon on the silicon carbide surface in the as received state is removed by simply heating to 400 C. Above 400 C, graphite and carbide type carbine are the primary species on the silicon carbide surface, in addition to silicon. The coefficients of friction of polycrystalline iron sliding against a single crystal silicon carbide (0001) surface were high at temperatures to 800 C. Similar coefficients of friction were obtained at room temperature after the silicon carbide was preheated at various temperatures up 800 C. When the friction experiments were conducted above 800 C or when the specimens were preheated to above 800 C, the coefficients of friction were dramatically lower. At 800 C the silicon and carbide type carbon are at a maximum intensity in the XPS spectra. With increasing temperature above 800 C, the concentration of the graphite increases rapidly on the surface, whereas those of the carbide type carbon and silicon decrease rapidly.

Miyoshi, K.↗
NASA NTRS1981

Development of lead salt semiconductor lasers for the 9-17 micron spectral region

Improved diode lasers of Pb sub 1-x Sn sub x Se operating in the 9-17 micrometers spectral region were developed. The performance characteristics of the best lasers exceeded the contract goals of 500 microW/mode at T 30K in the 9-12 micrometers region and 200 microW/mode at T 18K in the 16-17 micrometers region. Increased reliability and device yields resulted from processing improvements which evolved from a series of diagnostic studies. By means of Auger electron spectroscopy, laser shelf storage degradation was shown to be characterized by the presence of In metal on the semiconductor crystal surfaces. Studies of various metal barrier layers between the crystals and the In metal led to the development of an improved metallurgical contacting technology which has resulted in devices with performance stability values exceeding the contract goal of a one year shelf life. Lasers cycled over 500 times between 300K and 77K were also shown to be stable. Studies on improved methods of fabricating striped geometry lasers indicated that good spectral mode characteristics resulted from lasers which stripe widths of 12 and 25 micrometers.

Linden, K. J.↗
NASA NTRS1981

Vapor phase diamond growth technology

Ion beam deposition chambers used for carbon film generation were designed and constructed. Features of the developed equipment include: (1) carbon ion energies down to approx. 50 eV; (2) in suit surface monitoring with HEED; (3) provision for flooding the surface with ultraviolet radiation; (4) infrared laser heating of substrate; (5) residual gas monitoring; (6) provision for several source gases, including diborane for doping studies; and (7) growth from either hydrocarbon source gases or from carbon/argon arc sources. Various analytical techniques for characterization of from carbon/argon arc sources. Various analytical techniques for characterization of the ion deposited carbon films used to establish the nature of the chemical bonding and crystallographic structure of the films are discussed. These include: H2204/HN03 etch; resistance measurements; hardness tests; Fourier transform infrared spectroscopy; scanning auger microscopy; electron spectroscopy for chemical analysis; electron diffraction and energy dispersive X-ray analysis; electron energy loss spectroscopy; density measurements; secondary ion mass spectroscopy; high energy electron diffraction; and electron spin resonance. Results of the tests are summarized.

Angus, J. C.↗
NASA NTRS1981

Anomalous ionization seen in the spectra of B supergiants

An IUE survey of B supergiants has been conducted to study the persistence with spectral type of the ultraviolet resonance lines of N V, C IV and Si IV. N V is seen as late as B2.5Ia, C IV until B6Ia and Si IV throughout the range from B1.5 to B9. This is in fairly good agreement with the Auger ionization model of Cassinelli and Olson (1979). The terminal velocities are derived for the 20 stars in the sample and it is found that the ratio v(T)/v(esc) decreases monotonically with spectral type from the value of 3.0 that it has in the O spectral range to the value 1.0 at B9Ia.

Cassinelli, J. P.↗
NASA NTRS1981

Adhesion and friction of transition metals in contact with nonmetallic hard materials

Sliding friction experiments were conducted with the metals yttrium, titanium, tantalum, zirconium, vanadium, neodymium, iron, cobalt, nickel, tungsten, platinum, rhenium, ruthenium, and rhodium in sliding contact with single crystal diamond, silicon carbide, pyrolytic boron nitride, and ferrite. Auger electron spectroscopy analysis was conducted with the metals and nonmetals to determine the surface chemistry and the degree of surface cleanliness. The results of the investigation indicate the adhesion and friction of the transition metals in contact with diamond, silicon carbide, boron nitride, and ferrite are related to the relative chemical activity of the metals. The more chemically active the metal, the higher the coefficient of friction and the greater amount of transfer to the nonmetals.

Miyoshi, K.↗
NASA NTRS1981

Low cost solar aray project: Experimental process system development unit for producing semiconductor-grade silicon using the silane-to-silicon process

This phase consists of the engineering design, fabrication, assembly, operation, economic analysis, and process support R&D for an Experimental Process System Development Unit (EPSDU). The mechanical bid package was issued and the bid responses are under evaluation. Similarly, the electrical bid package was issued, however, responses are not yet due. The majority of all equipment is on order or has been received at the EPSDU site. The pyrolysis/consolidation process design package was issued. Preparation of process and instrumentation diagram for the free-space reactor was started. In the area of melting/consolidation, Kayex successfully melted chunk silicon and have produced silicon shot. The free-space reactor powder was successfully transported pneumatically from a storage bin to the auger feeder twenty-five feet up and was melted. The fluid-bed PDU has successfully operated at silane feed concentrations up to 21%. The writing of the operating manual has started. Overall, the design phase is nearing completion.

Source record↗
NASA NTRS1980

Energy-selective SESD imaging utilizing a CMA

A particularly simple conversion of a scanning Auger system for ESD ion energy distributions and scanning ESD has been developed. This approach combines the advantages of the small spot-size electron guns and mapping systems developed for SAM with the capability of ESD for the detection of hydrogen. Our intended use for the device is detection and mapping of surface concentrations of hydrogen on metals. The characteristics of SESD are illustrated with the preliminary results of an investigation into the ESD properties of hydrogenic adsorbates on Nb. It is shown that the ESDIED exhibit distinct differences indicative of the surface preparation, and that the ESD ion angular distributions have an effect on the observed contrast relationships in SESD.

Larson, L. A.↗
NASA NTRS1980

Interactions of efficiency and material requirements for terrestrial silicon solar cells

The transport velocity transformation method was used to analyze solar cell designs to determine optimum cell structures. It was found that low resistivity materials should be used up to the onset of Auger recombination; a properly designed three-layer structure permits base region approaching an ideal device in performance; and that higher resistivity front regions will need more sophisticated grid metallization structures than those used now. It was concluded that new features will provide idealized silicon cell structures yielding airmass 1 efficiencies in the 24-26.5% range, with real efficiencies near 22%.

Bowler, D. L.↗
NASA NTRS1981

Electron spectroscopy of the diamond surface

The diamond surface is studied by ionization loss spectroscopy and Auger electron spectroscopy. For surfaces heated to temperatures not exceeding 900 C, the band gap was found to be devoid of empty states in the absence of electron beam effects. The incident electron beam generates empty states in the band gap and loss of structure in the valence band for these surfaces. A cross section of 1.4 x 10 to the -19th sq cm was obtained for this effect. For surfaces heated to temperatures exceeding 900 C the spectra were identical to those from surfaces modified by the electron beam. The diamond surface undergoes a thermal conversion in its electronic structure at about 900 C.

Pepper, S. V.↗
NASA NTRS1981

Cathodoluminescence of InP

Cathodoluminescence studies were carried out on p-type InP having carrier concentrations ranging from 7.2 x 10 to the 16th to 7.4 x 10 to the 18th per cu cm in the temperature range of 80-580 K. It was found that low-temperature spectra exhibited peaks at 1.41 and 1.38 eV. These peaks were attributed to band-to-band and band-acceptor transitions, respectively. The dependence of the band-to-band peak on temperature was used to extend knowledge of the temperature dependence of the energy gap of InP to 550 K. It was shown that the half-width of the cathodoluminescence peak can be used for the determination of carrier concentration and carrier-concentration inhomogeneities in the material. The variations of the cathodoluminescence peak height with temperature indicated the possibility of Auger recombination for high carrier concentrations (7.4 x 10 to the 18th per cu cm) at temperatures above 450 K.

Gatos, C. H.↗
NASA NTRS1981

Electron reflection and secondary emission characteristics of sputter-textured pyrolytic graphite surfaces

Measurements are presented of secondary electron emission and reflected primary electron characteristics of sputter-textured pyrolitic graphite surfaces with microstructures of various sizes and densities, made with an Auger cylindrical mirror analyzer in a high-vacuum chamber at pressures below 1.33 x 10 to the -7th N/sq m (10 to the -9th torr). A dense, tall, thin, spire-like microstructure, obtained at ion energies of 1000 eV and ion current densities of 5 mA/sq cm, is the most effective. The secondary electron emission from such a surface is lower than that of soot, whose secondary emission is among the lowest of any material. At a primary electron energy of 1000 eV, the secondary electron emission yield of smooth CU is about 350% greater than the lowest value obtained for sputter-textured pyrolitic graphite. The reflected primary electron index of smooth Cu is a factor of 80 greater. If the secondary electron emission yield is reduced to 0.3, which is possible with sputter-textured pyrolitic graphite, the traveling wave tube collector efficiency could be improved by as much as 4% over that for smooth copper.

Wintucky, E. G.↗
NASA NTRS1981

High-temperature CW and pulsed operation in constricted double-heterojunction AlGaAs diode lasers

The behavior of constricted double-heterojunction (CDH) diode lasers has been investigated up to 170 C CW and 270 C pulsed. It is found that the temperature-dependent current concentration effect responsible for low threshold-current sensitivity and temperature-invariant external differential quantum efficiency in CDH lasers saturates at about 100 C. It is also found that over a wide temperature interval (180-280 C) the threshold current density has a To value of 40-50 C and that the spontaneous emission becomes increasingly sublinear above 220 C. Both effects are believed to reflect Auger recombination.

Botez, D.↗
NASA NTRS1981

Search for optical coronal line emission from the X-ray sources Epsilon Orionis /B0 Ia/ and Kappa Orionis /B0.5 Ia/

A search was conducted for evidence of a coronal region at the base of the winds of Epsilon Ori and Kappa Ori, by means of high signal-to-noise observations at the forbidden lines of Fe X, at 6574 A, and Fe XIV, 5303 A. Both stars have been detected as soft X-ray sources, and show anomalously strong O VI lines in their UV spectra. Large coronal emission measures were expected from the total X-ray flux and Auger-enhanced ionization, but the fact that the iron coronal lines were not detected places new limits on the emission measure if the total temperature is in the range of 700,000-3,000,000 or more than 1,000,000 for Kappa Ori and 2,000,000 for Epsilon Ori. It is suggested that at least some of the X-rays arise, not from the base corona, but from source features farther out in the wind.

Nordsieck, K. H.↗