Search NASA⌕ Search

SEARCH · Search NASA

Results for “Capacitive sensor”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 325 records · Page 18
All sourcesNASA NTRSDOE OSTI
NASA NTRS2007

Analysis of Fluid Gauge Sensor for Zero or Microgravity Conditions using Finite Element Method

In this paper the Finite Element Method (FEM) is presented for mass/volume gauging of a fluid in a tank subjected to zero or microgravity conditions. In this approach first mutual capacitances between electrodes embedded inside the tank are measured. Assuming the medium properties the mutual capacitances are also estimated using FEM approach. Using proper non-linear optimization the assumed properties are updated by minimizing the mean square error between estimated and measured capacitances values. Numerical results are presented to validate the present approach.

Deshpande, Manohar D.↗
NASA NTRS2009

SOI CMOS Imager with Suppression of Cross-Talk

A monolithic silicon-on-insulator (SOI) complementary metal oxide/semiconductor (CMOS) image-detecting integrated circuit of the active-pixel-sensor type, now undergoing development, is designed to operate at visible and near-infrared wavelengths and to offer a combination of high quantum efficiency and low diffusion and capacitive cross-talk among pixels. The imager is designed to be especially suitable for astronomical and astrophysical applications. The imager design could also readily be adapted to general scientific, biological, medical, and spectroscopic applications. One of the conditions needed to ensure both high quantum efficiency and low diffusion cross-talk is a relatively high reverse bias potential (between about 20 and about 50 V) on the photodiode in each pixel. Heretofore, a major obstacle to realization of this condition in a monolithic integrated circuit has been posed by the fact that the required high reverse bias on the photodiode is incompatible with metal oxide/semiconductor field-effect transistors (MOSFETs) in the CMOS pixel readout circuitry. In the imager now being developed, the SOI structure is utilized to overcome this obstacle: The handle wafer is retained and the photodiode is formed in the handle wafer. The MOSFETs are formed on the SOI layer, which is separated from the handle wafer by a buried oxide layer. The electrical isolation provided by the buried oxide layer makes it possible to bias the MOSFETs at CMOS-compatible potentials (between 0 and 3 V), while biasing the photodiode at the required higher potential, and enables independent optimization of the sensory and readout portions of the imager.

Pain, Bedabrata↗
DOE OSTI2018

A single electron transistor charge sensor in strong rf fields

We measure the charge sensitivity, S e , of a single electron transistor (SET) in the presence of strong (V rf ~ e/C g ) spurious radio frequency (rf) signals at frequencies up to 50 MHz, where C g is the gate capacitance. Although S e appears to degrade when exposed to V rf , we find that broadening of conduction peaks is largely due to the measurement technique and show that S e is maintained even with strong V rf present. We show cancellation of a known V rf signal at 1 MHz, demonstrating that a stable bias point in the presence of rf signals is possible.

47 OTHER INSTRUMENTATION↗
NASA NTRS2023

Propellant Mass Gauging in Microgravity with Electrical Capacitance Tomography

Advancements in microgravity propellant mass gauging will result in improvements to many areas of propellant management, which influences space vehicle performance and mission assurance. Propellant mass gauging technologies designed to work in an accelerated environment, where the propellant remains settled at one end of the propellant tank, do not always work well in a microgravity environment because the propellant is not necessarily settled. While some microgravity mass gauging technologies exist at various stages of development, most of them have major disadvantages. Electrical Capacitance Tomography (ECT) is a sensing technology that is able to reconstruct the liquid distribution inside of a tank, which can then be integrated to obtain mass. While ECT mass gauging will theoretically work during all phases of flight, it had not yet been tested in microgravity. The NASA Kennedy Space Center Launch Services Program, with support from the Flight Opportunities Program, successfully tested an ECT liquid mass gauging system experiment on a parabolic flight aircraft in May 2022. Basics of ECT measurement theory, details of the experiment setup, data processing, ground test results, and the flight test result will be discussed. The results suggest that ECT sensor systems will be useful as a propellant mass gauging technology in both accelerated and microgravity environments.

electrical capacitance tomography↗
DOE OSTI2020

Thermal and radiation response of 4H–SiC Schottky diodes with direct-write electrical contacts

In this work, a high-sensitivity 4H–SiC temperature sensor and an alpha detector have been fabricated using additively printed metal contacts. The surface morphology and electrical conductivity of the printed electrodes were established prior to Schottky diode development. 4H–SiC Schottky diodes with direct-write printed silver contacts on the 5 μ m-thick epilayer on 4H–SiC were characterized electrically in terms of the forward and reverse current–voltage and high-frequency capacitance–voltage characteristics. Furthermore, the turn-on voltage of the Schottky diodes, as established from the forward current–voltage characteristics measured up to a temperature of 400 °C, showed a linear temperature dependence. Schottky diodes with direct-write printed Ag electrodes were able to measure alpha particles emitted from Americium-241. The high temperature and radiation response of the Schottky diodes show their suitability for multi-modal sensor fusion on the 4H–SiC platform for harsh environment applications.

42 ENGINEERING↗
NASA NTRS1996

Electronic and Interfacial Properties of PD/6H-SiC Schottky Diode Gas Sensors

Pd/SiC Schottky diodes detect hydrogen and hydrocarbons with high sensitivity. Variation of the diode temperature from 100 C to 200 C shows that the diode sensitivity to propylene is temperature dependent. Long-term heat treating at 425 C up to 140 hours is carried out to determine the effect of extended heat treating on the diode properties and gas sensitivity. The heat treating significantly affects the diode's capacitive characteristics, but the diode's current carrying characteristics are much more stable with a large response to hydrogen. Scanning Electron Microscopy and X-ray Spectrometry studies of the Pd surface after the heating show cluster formation and background regions with grain structure observed in both regions. The Pd and Si concentrations vary between grains. Auger Electron Spectroscopy depth profiles revealed that the heat treating promoted interdiffusion and reaction between the Pd and SiC dw broadened the interface region. This work shows that Pd/SiC Schottky diodes have significant potential as high temperature gas sensors, but stabilization of the structure is necessary to insure their repeatability in long-term, high temperature applications.

Chen, Liang-Yu↗
NASA NTRSDate not supplied

Preliminary Results from Propellant Mass Gauging with Electrical Capacitance Tomography

Propellants mass gauging technologies designed to work in an accelerated environment, where the propellant remains settled at one end of the propellant tank, do not work well in a microgravity environment because the propellant is not necessarily settled. While some microgravity mass gauging technologies exist at various TRLs, most of them have major disadvantages. Improvements in microgravity propellant mass gauging will result in improvements to many areas of propellant management, which influences performance and mission assurance. Electrical Capacitance Tomography (ECT) is a sensing technology that is able to reconstruct the liquid distribution inside of a tank, which can then be integrated to obtain mass. ECT mass gauging recently achieved high accuracy in laboratory testing, <0.1% liquid volume measurement error, even during sloshing. While ECT mass gauging will theoretically work during all phases of flight, it had not yet been tested in microgravity. The NASA KSC Launch Services Program, with support from the Flight Opportunities Program, successfully flew an ECT liquid mass gauging system experiment on a Zero-G parabolic flight aircraft. Basics of ECT measurement theory, details of the experiment setup and flights, and preliminary results will be discussed. The preliminary results suggest that, even in the current prototype generation, ECT sensor systems will be useful as a propellant mass gauging technology in both an accelerated and microgravity environment.

mass gauging↗
DOE OSTI2024

Robustness and printed sensor qualification

A limiting factor of additive manufactured (AM) sensors for in-pile applications is the development of appropriate interconnection and packaging strategies that can maintain reliable performance in extreme environments. Failure mechanisms in these harsh conditions could include, but not limited to, materials interaction (i.e., intermetallic formation) and coefficient of thermal expansion (CTE) mismatch between the individual components of the sensors. To mitigate premature failure and enable the successful sustained operation of AM sensors, non-destructive qualification tests are used as an intermediate process control step used for verifying robustness and reliability of the sensor before they are deployed. A materials system of interest is the use of barium strontium titanium oxide (BST) films on stainless steel 316L (SS316L) substrate. Due to BST’s high dielectric constant and tunable dielectric properties, there is an interest for its application as an insulation/encapsulation layer for capacitive strain gauges when printed on structural materials. Previous work on the BST/SS316L material system, however, showed that the BST cracks when exposed to temperatures up to 600 °C due to CTE mismatch between the printed BST film and the metallic substrate. When comparing different fabrication techniques, less surface cracking was observed in the samples that deposited thinner (i.e., 2-20 μm) than samples that were thicker (i.e., 135 µm – 300 µm). The objective of this report is to establish a qualification process that will determine and address any challenges (i.e., mechanical failure of thick prints) of the AM sensor prior to its application in experimental tests. To demonstrate the qualification process in this report, laser spallation and uniaxial tensile tests using dynamic and quasi-static loading, respectively, will be discussed.

36 - MATERIALS SCIENCE↗
NASA NTRS2001

Electronics for Low-Temperature Space Operation Being Evaluated

Electronic components and systems capable of low-temperature operation are needed for many future NASA missions where it is desirable to have smaller, lighter, and cheaper (unheated) spacecraft. These missions include Mars (-20 to -120 C) orbiters, landers, and rovers; Europa (-150 C) oceanic exploratory probes and instrumentation; Saturn (-183 C) and Pluto (-229 C) interplanetary probes. At the present, most electronic equipment can operate down to only -55 C. It would be very desirable to have electronic components that expand the operating temperature range down to -233 C. The successful development of these low-temperature components will eventually allow space probes and onboard electronics to operate in very cold environments (out as far as the planet Pluto). As a result, radioisotope heating units, which are used presently to keep space electronics near room temperature, will be reduced in number or eliminated. The new cold electronics will make spacecraft design and operation simpler, more flexible, more reliable, lighter, and cheaper. Researchers at the NASA Glenn Research Center are evaluating potential commercial off-the- shelf devices and are developing new electronic components that will tolerate operation at low temperatures down to -233 C. This work is being carried out mainly inhouse and also through university grants and commercial contracts. The components include analog-to-digital converters, semiconductor switches, capacitors, dielectric and packaging material, and batteries. For example, the effect of low temperature on the capacitance of three different types of capacitors is shown in the graph. Using these advanced components, system products will be developed, including dc/dc converters, battery charge/discharge management systems, digital control electronics, transducers, and sensor instrumentation.

Patterson, Richard L.↗
NASA NTRSDate not supplied

Considerations on Electrolytic Conductivity Measurement for Monitoring of Ionic Silver Biocide Dosing

NASA interest in ionic silver (Ag+) as a biocide for spacecraft potable water systems motivates the development of Ag+ concentration sensors to ensure nominal dosing. The electrolytic conductivity change of highly-purified potable water is linearly related to the concentration of chemically-dosed Ag+ and could serve as a useful proxy measurement, while the conductivity change during electrolytic dosing may be less so, depending on the influent water chemistry and electrolytic efficiency. Understanding and mitigating the potentially deleterious effects of Ag+ interaction with conductivity measurement systems requires investigation. Issues associated with traditional conductivity cells, which rely on wetted(typically metal or graphite) electrodes, and capacitively-coupled contactless conductivity detection (C4D) for this application are considered. Traditional conductivity cells may potentially be subject to significant excitation-induced or auto-galvanic reduction of Ag+. These may result in Ag+ depletion or electrode fouling and associated measurement error. Proper selection of electrode material, excitation parameters, and cell geometry may limit such effects. C4D uses electrodes placed outside an inert, insulating material, with dielectric polarization enabling the production of an electric field and resultant current across the analyte solution. This approach could potentially mitigate problems with Ag+ depletion and fouling by eliminating the possibility of auto-galvanic deposition and reducing the Faradaic current density. However, it is necessary to confirm C4D performance at very low conductivity levels and to determine if long-term operation produces conductive deposits, which could result in measurement error. A commercial C4D system with 1/16” (1.59 mm)outer diameter flow tubing and claimed performance in the conductivity range appropriate for this application was identified, and its sensitivity in the upper parts of this range was confirmed in a preliminary experiment. A concept for a C4D detector that could allow for full rate flow-through using planar electrodes and thin-film dielectric layers is discussed.

silver↗
DOE OSTI2018

Large Area Picosecond Photodetector (LAPPD TM ) - Pilot production and development status

Here, we discuss performance results achieved for fully functional sealed Large Area Picosecond Photodetectors (LAPPD (TM)) in tests performed at Incom Inc., as well as independent test results reported by our early adopters. The LAPPD is a microchannel plate (MCP) based large area picosecond photodetector, capable of imaging with single-photon sensitivity at high spatial and temporal resolutions in a hermetic package. The LAPPD has an active area of 350 square centimeters in an all-glass hermetic package with a fused silica window and bottom plate and sidewalls made of borosilicate float glass. Signals are generated by a bi-alkali Na 2 KSb photocathode and amplified with a stacked chevron pair of MCPs produced by applying resistive and emissive atomic layer deposition coatings to glass capillary array (GCA) substrates. Signals are collected on RF stripline anodes applied to the bottom plates which exit the detector via pin-free hermetic seals under the side walls. LAPPD test and performance results for product produced and delivered to early adopter customers during the first half of 2018 are reviewed. These results include electron gains ≥ 7.5 x 10 6 @ 850/950 V (entry/exit MCP), low dark noise rates (22 Cts/s/cm 2 ), single photoelectron (PE) timing resolution of 64 picoseconds RMS, and single photoelectron spatial resolution along and across strips of 2.8 mm and 1.3 mm RMS respectively. Many of these devices also had very high QE photocathodes that were uniform over the full 195 mm x 195 mm window active area (LAPPD #15 QE% @ 365 nm Max/Avg/Min = 25.8/22.3 ± 3/15.7). An update is additionally provided of developments that enable capacitive signal coupling from the detector to application specific pads or stripline readout patterns deployed on printed circuit boards positioned beneath the file, outside of the vacuum package. We conclude with examples of how sensors offering picosecond timing, in diverse applications can bring transformative change to detector technology and applications in future experiments.

47 OTHER INSTRUMENTATION↗
NASA NTRS2023

Ionizing Radiation Effects on Hole Collection Backside-Illuminated P-Type Deep-Trench Pinned Photo-MOS Pixels under Image Acquisition

Dark current degradation, origins, and annealing behavior after x-ray irradiation are studied in a P-type, hole collecting, backside-illuminated image sensor currently being developed at STMicroelectronics and based on deep-trenched photo-MOS pixels. Different biasing conditions during irradiation, i.e. grounded or biased and sequenced, are compared. The dark current increase with total ionizing dose (TID) and the dark current annealing behavior seem to be driven by the backside interface between the P-epitaxy of the pixels and the ONO stack. Despite still being under development, this pixel architecture already exhibits both very good electro-optical performance and a better radiation hardness than pinned photodiode-based CMOS Image sensors that benefit from the same advanced CIS processing technologies. At high total dose range, the photogate challenges custom Radiation-Hardened-by-Design photodiodes by exhibiting a comparable radiation tolerance while bringing new features such as high-resolution or Correlated Double Sampling.

CMOS Image Sensor (CIS)↗
DOE OSTI2017

Recent advances in MoS{sub 2} nanostructured materials for energy and environmental applications – A review

Molybdenum disulfide (MoS{sub 2}), a layered transition metal dichalcogenide with an analogous structure to graphene, has attracted enormous attention worldwide owing to its use in a variety of applications such as energy storage, energy conversion, environmental remediation and sensors. MoS{sub 2} and graphene have almost similar functional properties such as high charge carrier transport, high wear resistance and good mechanical strength and friction. However, MoS{sub 2} is advantageous over graphene due to its low-cost, abundancy, tailorable morphologies and tuneable band gap with good visible light absorption properties. In this review, we have focussed mainly on recent advances in MoS{sub 2} nanostructured materials for the applications in the broad area of energy and environment. Special attention has been paid to their applications in dye-sensitized solar cells, supercapacitor, Li-ion battery, hydrogen evolution reaction, photocatalysis for the degradation of organic pollutants, chemical/bio sensors and gas sensors. Finally, the challenges to design MoS{sub 2} nanostructures suitable for energy and environmental applications are also highlighted. - Highlights: • Applications of MoS{sub 2} nanostructures towards energy, environmental remediation and sensors were summarized. • Recent advances in the development of MoS{sub 2} nanostructured materials were systematically investigated. • Wide range of energy applications including DSSCs, supercapacitors, Li-ion batteries and HER were reviewed. • Key challenges and optimization of structure for superior performance associated with MoS{sub 2} nanostructures were discussed. • Advances of environmental remediation based on MoS{sub 2} nanostructures were significantly highlighted.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS1972

Slush hydrogen liquid level system

A discrete capacitance liquid level system developed is specifically for slush hydrogen, but applicable to LOX, LN2, LH2, and RP1 without modification is described. The signal processing portion of the system is compatible with conventional liquid level sensors. Compatibility with slush hydrogen was achieved by designing the sensor with adequate spacing, while retaining the electrical characteristics of conventional sensors. Tests indicate excellent stability of the system over a temperature range of -20 C to 70 C for the circuit and to cryogenic temperatures of the sensor. The sensor was tested up to 40 g's rms random vibration with no damage to the sensor. Operation with 305 m of cable between the sensor and signal processor was demonstrated. It is concluded that this design is more than adequate for most flight and ground applications.

Hamlet, J. F.↗
NASA NTRS1984

Continuous-Reading Cryogen Level Sensor

Two pressure transducers used in system for measuring amount of cryogenic liquid in tank. System provides continuous measurements accurate within 0.03 percent. Sensors determine pressure in liquid and vapor in tank. Microprocessor uses pressure difference to compute mass of cryogenic liquid in tank. New system allows continuous sensing; unaffected by localized variations in composition and density as are capacitance-sensing schemes.

Barone, F. E.↗
NASA NTRS2002

Silicon base plate with low parasitic electrical interference for sensors

A microgyroscope has a baseplate made of the same material as the rest of the microgyroscope. The baseplate is a silicon baseplate having a heavily p-doped epilayer covered by a thick dielectric film and metal electrodes. The metal electrodes are isolated from the ground plane by the dielectric. This provides very low parasitic capacitive coupling between the electrodes. The thick dielectric reduces the capacitance between the electrodes and the ground plane.

Tang, Tony K.↗
NASA NTRS1986

Advanced high temperature static strain sensor development

An examination was made into various techniques to be used to measure static strain in gas turbine liners at temperatures up to 1150 K (1600 F). The methods evaluated included thin film and wire resistive devices, optical fibers, surface acoustic waves, the laser speckle technique with a heterodyne readout, optical surface image and reflective approaches and capacitive devices. A preliminary experimental program to develop a thin film capacitive device was dropped because calculations showed that it would be too sensitive to thermal gradients. In a final evaluation program, the laser speckle technique appeared to work well up to 1150 K when it was used through a relatively stagnant air path. The surface guided acoustic wave approach appeared to be interesting but to require too much development effort for the funds available. Efforts to develop a FeCrAl resistive strain gage system were only partially successful and this part of the effort was finally reduced to a characterization study of the properties of the 25 micron diameter FeCrAl (Kanthal A-1) wire. It was concluded that this particular alloy was not suitable for use as the resistive element in a strain gage above about 1000 K.

Hulse, C. O.↗