Recombination and meteor trail decay.
Three-body recombination and meteor trail decay compared with results of afterglow in laboratory plasma
PLASMA DECAY↗
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Photovoltaic Effect and Utilization of Cells Semiannual Report, Jul. 1 - Dec. 31, 1966
Effects of electron irradiation on surface recombination velocity of n and p type silicon photovoltaic cells of various resistivities
SILICON↗
Recombination of H3(+) and D3(+) Ions in a Flowing Afterglow Plasma
The analysis of flowing afterglow plasmas containing H3(+) or D3(+) ions indicates that the de-ionization of such plasmas does not occur by simple dissociative recombination of ions with electrons. An alternative model of de-ionization is proposed in which electrons are captured into H3(**) auto-ionization Rydberg states that are stabilized by collisional mixing of the Rydberg molecules' angular momenta. The proposed mechanism would enable de-ionization to occur without the need for dissociative recombination by the mechanisms of potential-surface crossings.
Gougousi, T.↗
Effects of angular-momentum-changing collisions on dielectronic satellite spectra
A generalization of the low-density corona-model theory of the intensities of satellite lines of the resonance lines emitted by multiply charged helium-like ions in the X-ray spectra of high-temperature plasmas is developed in order to take account of electron collisional transitions between close autoionizing levels. A formalism for determining the population densities of the autoionizing levels and the satellite line intensities is presented, and the quantum mechanical calculation of autoionization, radiative decay and electron-induced collisional transitions is discussed. Generalized emission rate coefficients corresponding to dielectronic recombination and inner-shell-electron collisional excitation are tabulated as functions of electron density and temperature. The procedure is then used to illustrate the effects of angular-momentum-changing electron collisions on the intensities of the satellites of the 1s2p 1P to 1s2 1S resonance line of the ions Al XII and Si XIII. It is concluded that the collisional transitions have their most significant effect on the intensities of satellite transitions from metastable autoionizing states, which may be useful in determining plasma densities.
Jacobs, V. L.↗
Thermoradiative Conversion for Space Power Systems
The thermoradiative cell is a new method for converting heat energy to electrical power, first detailed by Strandberg in 2015. The cell is structurally similar to a photovoltaic cell, in that it is a p-n junction semiconductor device, but thermodynamically operates in the reverse direction, converting the thermal dark current into electrical power by utilizing the recombination radiation from thermally-generated electron hole pairs to radiate waste heat to space. This technology may have application for space missions in converting thermal energy produced by a radioisotope source or from a nuclear reactor into power. The power and efficiency can be calculated as a function of bandgap in the detailed-balance case (the Shockley-Queisser limit), in which all of the thermal emissivity of the cell is due to the recombination of thermally generated electron-hole pairs, and all other recombination losses are ignored. The current produced is directly proportional to the recombination radiation, and thus the more thermally generated pairs, the higher the current. The voltage is proportional to the external bias. These two constraints allow optimization of the optimum bias point for maximum power, and allow calculation of the efficiency at maximum power point. Unlike photovoltaic cells, the maximum power operating point is not the same as the maximum efficiency point, and higher efficiency can be achieved at a higher (negative) bias in the ideal case. Incorporating non-ideal losses, however, shifts the maximum efficiency point toward lower bias. Since a thermoradiative cell operates by radiating directly to space, the current produced by a themoradiative cells will increase with the Stefan-Boltzman radiative efficiency; roughly the fourth power of the temperature. Thus, in contrast to a photovoltaic converter, the power produced is highest at high operating temperatures. Likewise, in contrast to conventional thermal conversion, high radiator temperature increases, rather than decreases the efficiency. Thus, the thermoradiative conversion may fill a mission niche in which small radiator size is required. The basic operation will be summarized, applications to space power discussed, and the requirements for further research outlined.
Photovoltaic Cell↗
Recombination of O2/+/ in the ionosphere
In spite of the excellent agreement between various laboratory measurements of the recombination rate of O2(+) with electrons, it is still questionable whether the laboratory results apply in the ionosphere, because although the radiative lifetime of vibrating O2(+) is not well known, indications are that it may be very long. Whether the laboratory results apply in the atmosphere depends on whether the recombination rate is dependent on the vibrational state of the O2(+) ion and on whether the ions are deactivated (or not) in both the laboratory experiments and the atmosphere prior to recombination. To obtain reliable answers to these questions, the present study was carried out to determine the recombination of O2(+) in the ionosphere from in situ measurements of the relevant temperatures and densities made by the open source mass spectrometer carried by the AE-C satellite. The photochemistry involved is discussed. The results show that the ionospheric determination of the recombination rate of O2(+) with electrons agrees with the laboratory measurements of Walls and Dunn (1974) for electron temperatures between 1200 and 2000 K.
Torr, D. G.↗
A study of the excitation and radiative decay of the 3s-prime 3D-0 and 3d 3D-0 levels of atomic oxygen
The absolute cross-sections for the excitation of the 989 A, 1027 A, 7990 A, 8446 A, 1.1287 micron and 1.3164 micron multiplets of atomic oxygen by electron impact dissociation of O2 are reported. The radiative branching ratios for these transitions are calculated from these results and compared with the NBS compilation of Wiese et al. (1966) and the recent theoretical calculations of Pradhan and Saraph (1977). The cascade models of O(+) radiative recombination and of electron-impact excitation of the O I(3S) state in the terrestrial airglow are discussed in the light of the laboratory measurements, and the effects of the resonant absorption of components of the lambda 989 A and lambda 1027 A multiplets by the Birge-Hopfield band system of N2 are investigated. This process is shown to depend sensitively on the N2 vibrational temperature and to cause characteristic changes in the OI EUV emission spectrum in auroras and in the sunlit F-region at high exospheric temperatures.
Zipf, E. C.↗
Biexciton Condensation in Electron-Hole-Doped Hubbard Bilayers: A Sign-Problem-Free Quantum Monte Carlo Study
The bilayer Hubbard model with electron-hole doping is an ideal platform to study excitonic orders due to suppressed recombination via spatial separation of electrons and holes. However, suffering from the sign problem, previous quantum Monte Carlo studies could not arrive at an unequivocal conclusion regarding the presence of phases with clear signatures of excitonic condensation in bilayer Hubbard models. Here, we develop a determinant quantum Monte Carlo algorithm for the bilayer Hubbard model that is sign-problem-free for equal and opposite doping in the two layers and study excitonic order and charge and spin density modulations as a function of chemical potential difference between the two layers, on-site Coulomb repulsion, and interlayer interaction. In the intermediate coupling regime and in proximity to the SU(4)-symmetric point, we find a biexcitonic condensate phase at finite electron-hole doping, as well as a competing (π, π) charge density wave state. In this study, we extract the Berezinskii-Kosterlitz-Thouless transition temperature from superfluid density and a finite-size scaling analysis of the correlation functions and explain our results in terms of an effective biexcitonic hard-core boson model.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Enhancement of Photoemission on p-Type GaAs Using Surface Acoustic Waves
We demonstrate that photoemission properties of p-type GaAs can be altered by surface acoustic waves (SAWs) generated on the GaAs surface due to dynamical piezoelectric fields of SAWs. Multiphysics simulations indicate that charge-carrier recombination is greatly reduced, and electron effective lifetime in p-doped GaAs may increase by a factor of 10× to 20×. It implies a significant increase, by a factor of 2× to 3×, of quantum efficiency (QE) for GaAs photoemission applications, like GaAs photocathodes. Conditions of different SAW wavelengths, swept SAW intensities, and varied incident photon energies were investigated. Essential steps in SAW device fabrication on a GaAs substrate are demonstrated, including deposition of an additional layer of ZnO for piezoelectric effect enhancement, measurements of current–voltage (I–V) characteristics of the SAW device, and ability to survive high-temperature annealing. Results obtained and reported in this study provide the potential and basis for future studies on building SAW-enhanced photocathodes, as well as other GaAs photoelectric applications.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
Enabling bifacial thin film devices by developing a back surface field using Cu x AlO y
Bifacial solar cells have the potential to increase the energy yield per unit area over traditional monofacial devices without significant added cost, driving $/kWh costs lower and accelerating the adoption of solar photovoltaics. However, the performance of bifacial thin film solar cells significantly lags that achieved by crystalline silicon cells. Here we incorporate wide bandgap Cu x AlO y as a back buffer layer for CdTe devices and achieve a backside illuminated device with high current density and high fill factor. Moreover, these values remain nearly constant even as the absorber layer thickness changes, indicating that a fully-depleted device is not required for efficient charge collection. We show that this response is indicative of a back surface field, albeit with a persistent high back surface recombination velocity. By managing electron reflection, we achieved a backside illumination conversion efficiency of 7.1% and bifaciality of 0.55 for a 3.3 µm CdTe device and 8.0% and 0.62 for a 2 µm device. Future improvements can be made by identifying and incorporating a passivation material that reduces the back surface recombination velocity.
36 MATERIALS SCIENCE↗
Prediction of electron concentration reductions in re-entry flow fields due to electrophilic liquid and water injection.
Discussion of an analytical model which leads to predictions of reductions in electron concentrations in reentry flow fields due to the injection of electrophilic liquids and water. The processes incorporated into the model are: penetration and breakup of the liquid jet, droplet acceleration and vaporization, expansion of the liquid spray due to droplet vaporization, electrophilic vapor diffusion, heterogeneous and homogeneous charged species recombination kinetics and homogeneous electron attachment kinetics. Spray boundary calculations are shown to be in good agreement with photographic observations of water and Freon E-3 sprays in wind tunnel tests of a scale model RAM C-III flight vehicle. Fixed-bias electrostatic probe data taken during the RAM C-III flight are interpreted in terms of effective jet penetration distances - which are shown to be consistent with calculations using the present model.
Pergament, H. S.↗
Optoelectronic property comparison for isostructural Cu 2 BaGeSe 4 and Cu 2 BaSnS 4 solar absorbers
To target mitigation of anti-site defect formation in Cu 2 ZnSnS 4–x Se x , a new class of chalcogenides, for which Ba or Sr (group 2) replace Zn (group 12), has recently been introduced for prospective solar absorber application. Cu 2 BaGeSe 4 (CBGSe) and Cu 2 BaSnS 4 (CBTS) are two such compounds, which share a common trigonal crystal structure (P3 1 space group) and similar quasi-direct band gap (~2 eV). While CBTS-based films have already been studied, there are no reports yet on films and solar cells based on related CBGSe. To identify key differences and similarities in the electronic properties between these two materials, electronic characteristics (e.g., carrier concentration, mobility, electron affinity, defect levels, recombination, and charge carrier kinetics) of vacuum-deposited CBGSe and CBTS films are compared using a variety of characterization methods. Hall effect measurements reveal that CBGSe films have relatively higher hole carrier concentration and lower mobility (3 × 10 15 cm –3 , 0.6 cm 2 V –1 s –1 ) compared to CBTS (5 × 10 12 cm –3 , 3.5 cm 2 V –1 s –1 ). Photoelectron spectroscopy yields low electron affinity values for both CBGSe (3.7 eV) and CBTS (3.3 eV), pointing to the necessity of pursuing low electron affinity buffer materials for both types of absorbers. At low temperatures, CBGSe films show free-exciton photoluminescence, as well as pronounced deep-level emission at ~1.4 eV, while CBTS films exhibit a strong bound-exciton signal with noticeably less intense deep-level emission than for CBGSe. Charge carrier kinetics, transport, and recombination properties of both types of films are also analyzed using optical-pump terahertz-probe spectroscopy and time-resolved microwave conductivity. The first CBGSe prototype solar cells (using chemical bath deposited CdS as a buffer layer) show a maximum of 1.5% efficiency with ~0.62 V open-circuit voltage. Furthermore, the measured properties point to possible limiting factors for CBGSe and related films for PV and optoelectronics and provide insights on possible approaches for improvement within this multinary chalcogenide family.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
Defects and annealing studies in 1-Me electron irradiated (AlGa)As-GaAs solar cells
The deep-level defects and recombination mechanisms in the one-MeV electron irradiated (AlGa)As-GaAs solar cells under various irradiation and annealing conditions are discussed. Deep-level transient spectroscopy (DLTS) and capacitance-voltage (CV) techniques were used to determine the defect and recombination parameters such as energy levels and defect density, carrier capture cross sections and lifetimes for both electron and hole traps as well as hole diffusion lengths in these electron irradiated GaAs solar cells. GaAs solar cells used in this study were prepared by the infinite solution melt liquid phase epitaxial (LPE) technique at Hughes Research Lab., with (Al0.9Ga0.1)-As window layer, Be-diffused p-GaAs layer on Sn-doped n-GaAs or undoped n-GaAs active layer grown on n(+)-GaAs substrate. Mesa structure with area of 5.86x1000 sq cm was fabricated. Three different irradiation and annealing experiments were performed on these solar cells.
Li, S. S.↗
Large Enhancements in the O/N2 Ratio in the Evening Sector of the Winter Hemisphere During Geomagnetic Storms
In this paper, we have looked for enhancements of the O/N2 ratio in data measured by the Dynamics Explorer 2 (DE 2) satellite in the middle latitudes of the winter hemisphere, based on a prediction that was made by the National Center for Atmospheric Research thermosphere/tonosphere general circulation model (NCAR-TIGCM) that such increases occur. The NCAR-TIGCM predicts that these enhancements should be seen throughout the low latitude region and in many middle latitude locations, but that the enhancements in O/N2 are particularly strong in the middle-latitude, evening-to-midnight sector of the winter hemisphere. When this prediction was used to look for these effects in DE 2 NACS (neutral atmosphere composition spectrometer) data, large enhancements in the O/N2 ratio (approx. 50 to 90%) were seen. These enhancements were observed during the main phase of a storm that occurred on November 24, 1982, and were seen in the same region of the winter hemisphere predicted by the NCAR-TIGCM. They are partially the result of the depletion of N2 and, as electron loss is dependent on dissociative recombination at F(sub 2) altitudes, they have implications for electron densities in this area. Parcel trajectories, which have been followed through the NCAR-TIGCM history file for this event, show that large O/N2 enhancements occur in this limited region in the winter hemisphere for two reasons. First, these parcels of air are decelerated by the antisunward edge of the ion convection pattern; individual parcels converge and subsidence occurs. Thus molecular-nitrogen-poor air is brought from higher to lower heights. Because neutral parcels that are found a little poleward of the equatorial edge of the eveningside convection pattern are swept inward toward the center of the auroral oval, the enhancements occur only in a very limited range of latitudes. Second, nitrogen-poor air is transported from regions close to the magnetic pole in the winter hemisphere. During geomagnetic storms, enhanced meridional winds are driven by the increased pressure-gradient force that is associated with intensified Joule heating in the auroral oval. These pressure-driven winds decrease rapidly on the dayside beyond the auroral oval where the parcels originate, limiting the region into which the parcels can be transported. Thus these two processes drive values of O/N2 in a limited region of the winter hemisphere, and reinforce only in the evening sector, causing large changes in this region.
Burns, A. G.↗
CdSexTe1-x/CdTe Devices with Reduced Interface Recombination Through Novel Back Contacts and Group-V Doping
Since excellent carrier lifetimes and front interface electronic quality are now achieved, rear interface recombination can limit V OC in CdSexTe1-x/CdTe solar cells. Several back-contact structures for devices were fabricated using combinations of tellurium, aluminum oxide, amorphous silicon, and indium tin oxide (ITO). Time-resolved photoluminescence was used to characterize such structures. We show increasingly improved interface passivation through the subsequent use of aluminum oxide, amorphous silicon, and ITO. Additionally, we show that arsenic-doped absorbers form a more passive interface with numerous back contact structures.
aluminum oxide↗
Large decreases in ionospheric total electron content as a result of thermospheric composition changes during geomagnetic storms
The geomagnetic storms of April 17-21,2002 and May 29-30,2003 caused large decreases in the O/N2 column density ratio in the thermosphere. For these storms, ON2 column density decreases of greater than 50% were observed to extend to mid-to-low latitudes with the FUV sensitive Earth Camera of the Visible Imaging System (VIS) on the Polar spacecraft. Simultaneously in these same regions, the ground-based GPS network observed approximately 80% reductions in the Total Electron Content (TEC) of the ionosphere. The reduction in the Om2 column density ratio is due mainly to increases in the molecular species that have welled-up into the thermosphere from the lower levels of the atmosphere due to auroral heating. The geomagnetic-storm driven increase in molecular densities at typical ionospheric heights rapidly charge exchange with the ambient ionized atoms and subsequently dissociatively recombine with the ionospheric electrons leading to a reduction in the total charge density. The transition boundaries between high and low regions of O/N2 as well as TEC can be tracked in the images and the thermospheric winds can be determined from the motion of the boundaries. The motion of these boundaries during the development of the geomagnetic storm will be discussed.
Sigwarth, J. B.↗
The Dynamics of Thermospheric Composition and Ionospheric Total Electron Content During Geomagnetic Storms
The geomagnetic storms of April 17-21,2002 and May 29-30,2003 caused large decreases in the O/N2 column density ratio in the thermosphere. For these storms, O/N2 column density decreases of greater than 50% were observed to extend to mid-to-low latitudes with the FUV sensitive Earth Camera of the Visible Imaging System (VIS) on the Polar spacecraft. Simultaneously in these same regions, the ground-based GPS network observed approximately 80% reductions in the Total Electron Content (TEC) of the ionosphere. The reduction in the O/N2 column density ratio is due mainly to increases in the molecular species that have welled-up into the thermosphere from the lower levels of the atmosphere due to auroral heating. The geomagnetic-storm driven increase in molecular densities at typical ionospheric heights rapidly charge exchange with the ambient ionized atoms and subsequently dissociatively recombine with the ionospheric electrons leading to a reduction in the total charge density. The transition boundaries between high and low regions of O/N2 as well as TEC can be tracked in the images and the thermospheric winds may be inferred from the motion of the boundaries. The motion of these boundaries during the development of the geomagnetic storm will be discussed.
Sigwarth, John B.↗
Role of Metal Cocatalysts in the Photocatalytic Production of Hydrogen from Water Revisited
The use of photocatalysts to promote the production of molecular hydrogen from water, following the so-called water splitting reaction, continues to be a promising route for the green production of fuels. The molecular basis of this photocatalysis is the photoexcitation of electrons from the valence band of semiconductors to their conduction band, from which they can be transferred to chemical reactants, protons in the case of water, to promote a reduction reaction. The mechanism by which such a process takes place has been studied extensively using titanium oxide, a simple material that fulfills most requirements for water splitting. However, photocatalysis with TiO 2 tends to be highly inefficient; a cocatalyst, commonly a late transition metal (Au, Pt) in nanoparticle form, needs to be added to facilitate the production of H 2 . The metal is widely believed to help with the scavenging of the excited electrons from the conduction band of the semiconductor in order to prevent their recombination with the accompanying hole formed in the valence band, a step that cancels the initial photon absorption and competes with the photolytic chemical reduction. Here we review and analyze the molecular basis for that mechanism and argue for an alternative explanation, that the role of the metal is to help with the recombination of the atomic hydrogen atoms produced by proton reduction on the semiconductor surface instead. First, we summarize what is known about the electronic structure of these photocatalysts and how the electronic levels need to line up for the reduction of protons in water to be feasible. Next, we review the current understanding of the dynamics of the steps associated with the absorption of photons, the de-excitation via electron–hole pair recombination and fluorescence decay, and the electronic transitions that lead to proton reduction, and contrast those with the rates of the chemical steps required to produce molecular hydrogen. The following section addresses the changes introduced by the addition of the metal cocatalyst, comparatively evaluating its role as either an electron scavenger or a promoter of the recombination of hydrogen atoms. A discussion of the viable chemical mechanisms for the latter pathway is included. Finally, we briefly mention other associated aspects of this photocatalysis, including the possible promotion of H 2 production with visible light via resonant excitation of the surface plasmon of Au nanoparticles, the use of single-metal (Au, Pt) atom catalysts and of yolk–shell nanostructures, and the reduction of organic molecules. We end with a brief personal perspective on the possible generality of the concepts introduced in this Critical Review.
08 HYDROGEN↗