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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 325 records · Page 18

Artificial production of VLF hiss.

Artificial production of broadband VLF hiss by means of Cerenkov radiation process as side effect of electron accelerator aurora generating experiment

Bell, T. F.↗

The SCEPTRE facility: Improved simulation of the space environment through the application of advanced technology

SCEPTRE (Space Combined Effects Primary Test Research Equipment) is the Air Force Materials Laboratory's primary device for performance testing of spacecraft thermal control materials. It has been undergoing a major upgrade in the last two years aimed at making it capable of simulating the synergistic effects of vacuum, ultraviolet radiation, and electron radiation. In the course of this work, a number of advances have been made in the areas of computer data processing, solar simulation, and the analysis of test results.

Ruley, J. D.↗

Sensors for the Hubble Space Telescope wide field and planetary cameras (1 and 2)

The technology of the wide field planetary camera (WFPC-2) CCD technology is examined with reference to the WFPC-1 experience. Strategies are presented for elimination of quantum efficiency (QE) hysteresis and implementation of maintenance-free QE stability, improved far-UV performance, on-orbit photometric calibrations, refinements in CCD electronics, and anticipated CCD particle radiation effects. Absorption depth vs. wavelength in silicon and a cross section of the CCD membrane are shown.

Trauger, John T.↗

Current State of Modeling the Photochemistry of Titan's Mutually Dependent Atmosphere and Ionosphere

In the context of recent observations, microphysical models, and laboratory data, a photochemical model of Titan's atmosphere, including updated chemistry focusing on rate coefficients and cross sections measured under appropriate conditions, has been developed to increase understanding of these processes and improve upon previous Titan photochemical models. The model employs a two-stream discrete ordinates method to characterize the transfer of solar radiation, and the effects of electron-impact, cosmic-ray deposition, and aerosol opacities from fractal and Mie particles are analyzed. Sensitivity studies demonstrate that an eddy diffusion profile with a homopause level of 850 km and a methane stratospheric mole fraction of 2.2% provides the best fit of stratospheric and upper atmosphere observations and an improved fit over previous Titan photochemical models. Lack of fits for C3H8, HC3N, and possibly C2H3CN can be resolved with adjustments in aerosol opacity. The model presents a benzene profile consistent with its detection in Titan's stratosphere [Coustenis et al., 2003], which may play an important role in the formation of Titan hazes. An electron peak concentration of 4200 cm(exp -3) is calculated, which exceeds observations by 20%, considerably lower than previous ionosphere models. With adjustments in aerosol opacities and surface fluxes the model illustrates that reasonable fits to existing observations are possible with a single eddy diffusion profile, contrary to the conclusions of previous Titan models. These results will aid in the receipt and interpretation of data from Cassini-Huygens, which will arrive at Titan in 2004 and deploy a probe into Titan's atmosphere in January 2005.

ion chemistry↗

In situ investigation of ion irradiation-induced amorphization of (Ge 2 Sb 2 Te 5 ) 1−x C x [0 ≤ x ≤ 0.12]

Chalcogenide thin films that undergo reversible phase changes show promise for use in next-generation nanophotonics, microelectronics, and other emerging technologies. One of the many studied compounds, Ge2Sb2Te5, has demonstrated several useful properties and performance characteristics. However, the efficacy of benchmark Ge2Sb2Te5 is restricted by amorphous phase thermal stability below ∼150 °C, limiting its potential use in high-temperature applications. In response, previous studies have added a fourth species (e.g., C) to sputter-deposited Ge2Sb2Te5, demonstrating improved thermal stability. Our current research confirms reported thermal stability enhancements and assesses the effects of carbon on crystalline phase radiation response. Through in situ transmission electron microscope irradiation studies, we examine the effect of C addition on the amorphization behavior of initially cubic and trigonal polycrystalline films irradiated using 2.8 MeV Au to various doses up to 1 × 1015 cm −2 . It was found that increased C content reduces radiation tolerance of both cubic and trigonal phases.

36 MATERIALS SCIENCE↗

The effects of the geosynchronous energetic particle radiation environment on spacecraft charging phenomena

The energetic electron environment at the geosynchronous orbit is responsible for a variety of adverse charging effects on spacecraft components. The most serious of these is the degradation and failure of a complementary-metal-oxide-semiconductor (CMOS) electronic components as a result of internal charge-buildup induced by the energetic electrons. Efforts to accurately determine the expected lifetime of these components in this orbit are hampered by the lack of detailed knowledge of the electron spectrum and intensity, particularly of the more penetrating energies greater than 1.5 MeV. This problem is illustrated through the calculation of the dose received by a CMOS device from the energetic electrons and associated bremsstrahlung as a function of aluminum shielding thickness using the NASA AE-6 and the Aerospace measured electron environments. Two computational codes which were found to be in good agreement were used to perform the calculations. For a given shielding thickness the dose received with the two radiation environments differ by as much as a factor of seven with a corresponding variation in lifetime of the CMOS.

Reagan, J. B.↗

A Comparison of High-Energy Electron and Cobalt-60 Gamma-Ray Radiation Testing

In this paper, a comparison between the effects of irradiating microelectronics with high energy electrons and Cobalt-60 gamma-rays is examined. Additionally, the effect of electron energy is also discussed. A variety of part types are investigated, including discrete bipolar transistors, hybrids, and junction field effect transistors

Boutte, Alvin J.↗

Validation of multi-temperature nozzle flow code NOZNT

A computer code NOZNT (Nozzle in n-Temperatures), which calculates one-dimensional flows of partially dissociated and ionized air in an expanding nozzle, is tested against five existing sets of experimental data. The code accounts for: a) the differences among various temperatures, i.e., translational-rotational temperature, vibrational temperatures of individual molecular species, and electron-electronic temperature, b) radiative cooling, and c) the effects of impurities. The experimental data considered are: 1) the sodium line reversal and 2) the electron temperature and density data, both obtained in a shock tunnel, and 3) the spectroscopic emission data, 4) electron beam data on vibrational temperature, and 5) mass-spectrometric species concentration data, all obtained in arc-jet wind tunnels. It is shown that the impurities are most likely responsible for the observed phenomena in shock tunnels. For the arc-jet flows, impurities are inconsequential and the NOZNT code is validated by numerically reproducing the experimental data.

Park, Chul↗

Commercial Crew Program (CCP) Post-flight Reference Radiation Environments

The Nowcast of Aerospace Ionizing RAdiation System (NAIRAS) model version 3 is a coupled physics-based model that transports ionizing radiation through the heliosphere, Earth’s magnetosphere, the neutral atmosphere, and aircraft and spacecraft shielding. Ionizing radiation sources included in the model are: 1) galactic cosmic rays, 2) solar energetic particles including protons and heavy ions, and 3) the inner radiation belt trapped protons and electrons. NAIRAS predicts dosimetric quantities and differential and integral flux and fluence quantities for assessing human radiation exposure and single event effects in vehicle electronic systems from the Earth’s surface to the space environment.

Christopher J Mertens↗

Infrared response measurements on radiation-damaged Si/Li/ detectors.

The improved infrared response (IRR) technique has been used to qualitatively compare radiation effects on Si(Li) detectors with energy levels reported for silicon in the literature. Measurements have been made on five commercial silicon detectors and one fabricated in-house, both before and after irradiation with fast neutrons, 1.9-MeV protons, and 1.6-MeV electrons. Effects dependent upon the extent of radiation damage have been observed. It seems likely that the photo-EMF, or photo-voltage, effect is the basic mechanism for the observation of IRR in p-i-n diodes with a wide i-region. Experimental characteristics of the IRR measurement are in agreement with those of the photovoltage effect.

Sher, A. H.↗

The space radiation environment for electronics

The earth's space radiation environment is described in terms of charged particles as relevant to effects on spacecraft electronics. The nature and magnitude of the trapped and transiting environments are described in terms of spatial distribution and temporal variation. The internal radiation environment of the spacecraft is described in terms of shielding the high-energy particles of the free-field environment. Exposure levels are presented in terms of ionizing radiation dose and particle fluence for comparison to electronic component susceptibility.

Stassinopoulos, E. G.↗

Previous design restraints and radiation damage effects of low energy particles

Spacecraft design fluences and damage by low energy electrons and protons are summarized. For electron energies 5 MeV, the design fluence is 10 to the 11th power electrons/sq cm; for energies 5 MeV, the integral spectrum is assumed to go as 1/E sq. The design fluences for proton energies 30 MeV is 1.5 x 10 to the 9th power protons/sq cm; for energies 100 MeV, it is 5 x 10 to the 14th power protons/sq cm. The radioisotope thermoelectric generator gamma and neutron radiation constraints are listed. Damage due to electron energies 0.5 MeV and proton energies 10 MeV are summarized for effects on spacecraft thermal surfaces, reflective surfaces, and refractive materials. The high frequency noise figure for field effect transistors may increase markedly, and another effect is the buildup of charge on insulating surfaces, resulting in large electric fields.

Trainor, J. H.↗

NASA Electronic Parts and Packaging (NEPP) Program: Overview and Technology Focus Areas - Responsive Technology Assurance for Civil Space

NASA Electronic Parts and Packaging (NEPP) Program Overview and Technology Highlights – The NEPP Program provides NASA's leadership for developing and maintaining guidance for the screening, qualification, test, and reliable use of electrical, electronic, and electromechanical parts by NASA, in collaboration with other government agencies and industry. The NASA Electronic Parts Assurance Group (NEPAG) is a core portion of NEPP. This presentation highlights key focus areas for 2019.

radiation effects↗

Selective modulation of electronic transport in VO 2 induced by 10 keV helium ion irradiation

Vanadium dioxide (VO 2 ) manifests an abrupt metal–insulator transition (MIT) from monoclinic to rutile phases, with potential use for tunable electronic and optical properties and spiking neuromorphic devices. Understanding pathways to modulate electronic transport in VO 2 , as well as its response to irradiation (e.g., for space applications), is critical to better enable these applications. In this work, we investigate the selective modulation of electronic transport in VO 2 films subject to different 10 keV helium ion (He + ) fluences. Under these conditions, the resistivity in the individual monoclinic and rutile phases varied by 50%–200%, while the MIT transformation temperature remains constant within 4 °C independent of irradiation fluence. Importantly, different trends in the resistivity of the monoclinic and rutile phases were observed both as a function of total He fluence as well as in films grown on different substrates (amorphous SiO 2 /Si vs single crystal Al 2 O 3 ). Through a combination of measurements including majority carrier sign via Seebeck, low frequency noise, and TEM, our investigation supports the presence of different kinds of point defects (V in; O in), which may arise due to grain boundary defect interactions. Our work suggests the utility of He irradiation for the selective modulation of VO 2 transport properties for neuromorphic, in contrast to other established but non-selective methods, like doping.

36 MATERIALS SCIENCE↗