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At least 325 records · Page 18

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NASA NTRS1984

The 20 GHz solid state transmitter design, impatt diode development and reliability assessment

A single drift gallium arsenide (GaAs) Schottky barrier IMPATT diode and related components were developed. The IMPATT diode reliability was assessed. A proof of concept solid state transmitter design and a technology assessment study were performed. The transmitter design utilizes technology which, upon implementation, will demonstrate readiness for development of a POC model within the 1982 time frame and will provide an information base for flight hardware capable of deployment in a 1985 to 1990 demonstrational 30/20 GHz satellite communication system. Life test data for Schottky barrier GaAs diodes and grown junction GaAs diodes are described. The results demonstrate the viability of GaAs IMPATTs as high performance, reliable RF power sources which, based on the recommendation made herein, will surpass device reliability requirements consistent with a ten year spaceborne solid state power amplifier mission.

Picone, S.↗

NASA NTRS1983

Considerations for millimeter wave printed antennas

Calculated data are presented on the performance of printed antenna elements on substrates which may be electrically thick, as would be the case for printed antennas at millimeter wave frequencies. Printed dipoles and microstrip patch antennas on polytetrafluoroethylene (PTFE), quartz, and gallium arsenide substrates are considered. Data are given for resonant length, resonant resistance, bandwidth, loss due to surface waves, loss due to dielectric heating, and mutual coupling. Also presented is an optimization procedure for maximizing or minimizing power launched into surface waves from a multielement printed antenna array. The data are calculated by a moment method solution.

Pozar, D. M.↗

NASA NTRS1984

Microwave monolithic integrated circuit development for future spaceborne phased array antennas

The development of fully monolithic gallium arsenide (GaAs) receive and transmit modules suitable for phased array antenna applications in the 30/20 gigahertz bands is presented. Specifications and various design approaches to achieve the design goals are described. Initial design and performance of submodules and associated active and passive components are presented. A tradeoff study summary is presented, highlighting the advantages of a distributed amplifier approach compared to the conventional single power source designs. Previously announced in STAR as N84-13399

Anzic, G.↗

NASA NTRS1983

Mechanical design of a low concentration ratio solar array for a space station application

This paper describes a preliminary study and conceptual design of a low concentration ratio solar array for a space station application with approximately a 100 kW power requirement. The baseline design calls for a multiple series of inverted, truncated, pyramidal optical elements with a geometric concentration ratio (GCR) of 6. It also calls for low life cycle cost, simple on-orbit maintainability, 1984 technology readiness date, and gallium arsenide (GaAs) of silicon (Si) solar cell interchangeability. Due to the large area needed to produce the amount of power required for the baseline space station, a symmetrical wing design, making maximum use of the commonality of parts approach, was taken. This paper will describe the mechanical and structural design of a mass-producible solar array that is very easy to tailor to the needs of the individual user requirement.

Biss, M. S.↗

NASA NTRS1983

Optical, thermal, and electrical performance of low-CR solar arrays

This paper describes the analysis and testing of a photovoltaic low-CR concentrator shaped like a truncated pyramid with an aperture of 0.5 m on a side and a geometric concentration ratio of six. The truncated base plane is covered by either silicon (Si) or gallium arsenide (GaAs) solar cells. Ray-trace analysis of the concentrator predicts a peak optical efficiency of 0.77, which falls off only gradually with pointing error. A coupled thermal-electrical analysis of the system shows that the moderately nonuniform illumination produced by the concentrator does not result in significant mismatch losses, provided the solar cells are connected in parallel groups. The results of ground tests involving a full-scale prototype concentrator conform well with theoretical predictions.

French, E. P.↗

NASA NTRS1983

The growth of materials processing in space - A history of government support for new technology

Development of a given technology for national defense and large systems developments when the task is too large or risky for entrepreneurs, yet is clearly in the best interest of the nation are discussed. Advanced research to identify areas of interest was completed. Examples of commercial opportunities are the McDonnell-Douglas Corporation purification process for pharmaceutical products and the Microgravity Research Associates process for growing gallium arsenide crystals in space.

Mckannan, E. C.↗

NASA NTRS1985

Fast Clock Recovery for Digital Communications

Circuit extracts clock signal from random non-return-to-zero data stream, locking onto clock within one bit period at 1-gigabitper-second data rate. Circuit used for synchronization in opticalfiber communications. Derives speed from very short response time of gallium arsenide metal/semiconductor field-effect transistors (MESFET's).

Tell, R. G.↗

NASA NTRS1985

Spectrophotovoltaic Power Generation

Optical Components of spectrophotovoltaic system concentrate light from Sun and redirect short-wavelength portion of spectrum to solar cell having large gap in energy band (gallium arsenide cell). Longer-wavelength portion of spectrum passes through beam splitter to cell with smaller gap in energy band (silicon band). Available energy in Sunlight thus exploited more fully and, improvements in energy-conversion efficiency possible.

Knowles, G.↗

NASA NTRS1985

Tests of Low-Concentration-Ratio Photovoltaic Elements

Report describes performance measurements on elements of low-concentrationratio solar arrays (LCRSA's) employing silicon and gallium arsenide photovoltaic cells. Measurements intended to verify predictions of performance based on mathematical models. Measured and predicted values found to agree closely for both normal and off-normal pointing of array toward Sun.

Mills, M. W.↗

NASA NTRS1984

Trends in Space Photovoltaic Technology

The current status of silicon and gallium arsenide (GaAs) solar cell technology is described, and anticipated near and far term projections of photovoltaic cell performance are provided. It is shown that current ultrathin silicon and near term GaAs solar cells provide substantial enhancement of planar solar array performance. The advantages of utililizing GaAs cells in high concentration arrays is discussed. Evidence is provided to support the view that photovoltaic offers a viable means of supporting long term space objectives.

Scott-Monck, J. A.↗

NASA NTRS1985

Determination of the mobility profile in GaAs-MESFETs

A process for measuring charge carrier mobility for gallium-arsenide metal semiconductor field effect transistors is described in an attempt to optimize the relationship between this factor and production. The measuring procedure allows an actual determination of local mobility in the channel. The physical basis for the process and features of the measuring room are outlined. The measuring technique is described and recommendations are made for setting measuring parameters.

Prost, W.↗

NASA NTRS1984

GaAs and 3-5 compound solar cells status and prospects for use in space

Gallium arsenide solar cells equal or supass the best silicon solar cells in efficiency, radiation resistance, annealability, and in the capability to produce usable power output at elevated temperatures. NASA has been involved in a long range research and development program to capitalize on these manifold advantages, and to explore alternative III-V compounds for additional potential improvements. The current status and future prospects for research and development in this area are reviewed and the progress being made toward development of GaAs cells suitable for variety of space missions is discussed. Cell types under various stages of development include n(+)/p shallow homojunction thin film GaAs cells, x100 concentration ratio p/n and n/p GaAs small area concentrator cells, mechanically-stacked, two-junction tandem cells, and three-junction monolithic cascade cells, among various other cell types.

Flood, D. J.↗

NASA NTRS1984

Activities of the Solid State Physics Research Institute

Three research programs are reviewed. These programs are muon spin rotation, studies of annealing in gallium arsenide and Hall effect studies in semiconductors. The muon spin rotation work centers around the development of a facility at the Alternating Gradient Synchrotron of BNL. Studies of annealing in GaAs concerns itself with the measurement of depolarization in GaAs. The Hall effect studies of proton damaged semiconductors provide new information on the nature of defects and dislocations in GaAs.

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NASA NTRS1984

Space station automation study. Automation requirements derived from space manufacturing concepts. Volume 1: Executive summary

The two manufacturing concepts developed represent innovative, technologically advanced manufacturing schemes. The concepts were selected to facilitate an in depth analysis of manufacturing automation requirements in the form of process mechanization, teleoperation and robotics, and artificial intelligence. While the cost effectiveness of these facilities has not been analyzed as part of this study, both appear entirely feasible for the year 2000 timeframe. The growing demand for high quality gallium arsenide microelectronics may warrant the ventures.

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NASA NTRS1985

Thermionic photovoltaic energy converter

A thermionic photovoltaic energy conversion device comprises a thermionic diode mounted within a hollow tubular photovoltaic converter. The thermionic diode maintains a cesium discharge for producing excited atoms that emit line radiation in the wavelength region of 850 nm to 890 nm. The photovoltaic converter is a silicon or gallium arsenide photovoltaic cell having bandgap energies in this same wavelength region for optimum cell efficiency.

Chubb, D. L.↗

NASA NTRS1986

Low-Concentration-Ratio Solar-Cell Arrays

Paper presents design concept for mass-producible arrays of solar electric batteries and concentrators tailored to individual requirements. Arrays intended primarily for space stations needing about 100 kW of power. However, modular, lightweight, compact, and relatively low-cost design also fulfill requirements of some terrestrial applications. Arrays built with currently available materials. Pultrusions, injectionmolded parts, and composite materials used extensively to keep weight low. For added flexibility in design and construction, silicon and gallium arsenide solar-cell panels interchangeable.

Biss, M. S.↗

NASA NTRS1986

Low-Resistivity Zinc Selenide for Heterojunctions

Magnetron reactive sputtering enables doping of this semiconductor. Proposed method of reactive sputtering combined with doping shows potential for yielding low-resistivity zinc selenide films. Zinc selenide attractive material for forming heterojunctions with other semiconductor compounds as zinc phosphide, cadmium telluride, and gallium arsenide. Semiconductor junctions promising for future optoelectronic devices, including solar cells and electroluminescent displays. Resistivities of zinc selenide layers deposited by evaporation or chemical vapor deposition too high to form practical heterojunctions.

Stirn, R. J.↗

NASA NTRS1986

Photoelectronic Monitor of Motion Sickness

Instrument includes gallium arsenide light-emitting diode (LED) and silicon phototransistor with infrared filter, all cast in single plastic housing. Housing attached to subject's face with transparent doublesided adhesive tape. LED directs pulses of infrared light to skin, which reflects them to phototransistor. Phototransistor produces signal that is processed by external circuits to yield plot of infrared reflectance with time. External circuits temperature-compensated and respond only to pulsed component of detector output, rejecting those components caused by stray light. Circuits also extract blood-volume pulse amplitude and heart rate.

Oman, C. M.↗