Investigation of the detectivity of radiation produced defect levels on n and p type silicon and germanium Semiannual progress report, period ending 1 Aug. 1968
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Fermi level in n- and p-type Ge after irradiation by 50 Mev electrons determined by temperature dependence of carrier concentration
Direct reading instrument using four point probe and two analog computing circuits for Si and Ge resistivity measurements
Hydrothermal investigation of Ge trace quantity distribution between metal, silicate and sulfide phases at controlled oxygen partial pressure by oxygen buffer techniques
Electron and phonon tunneling spectroscopy in metal Ge contacts, noting improved agreement with one electron model
Chemical classification of iron meteorites with Ge concentrations between 80 and 200 ppm, reporting concentrations of Ge, Ni, Ga and Ir
Fast neutron irradiation effect in Ge crystals, using X ray diffraction and volumetric measurements
Ge films formation by evaporation technique, discussing background O pressure effect
Black body responsivity data of n-type and p-type silicon
HF admittance and noise in foward-biased majority carrier Ge-Si n-n heterojunctions and Schottky barrier
Ge films crystallinity deposited on Ge substrates in vacuum as function of deposition rate, substrate temperature and thermal treatment and background O pressure
Time and temperature dependence of thermoelectric properties of Si-Ge alloys
Transport mechanism for holes in polycrystalline Ge films based on Matthiessen rule, considering surface scattering and dislocation
Gold plated Ge surfaces, investigating LEED patterns and electronic properties
Iron and stony iron meteorites chemical classification, noting Ni, Ga, Ge and Ir concentrations and metal phases
Co-Ge-Si alloys phase equilibria, evaluating long term stability of junctions between thermoelectric batteries conducting series connectors
Noise, admittance and I-V characteristics of hot holes in space charge limited Ge diodes at high voltage and frequencies to 22 MHz
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