Three-terminal magnetic tunnel junction synapse circuits with spike-timing-dependent plasticity.
Abstract not provided.
Akinola, Otitoaleke↗
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Field-free Magnetization Switching by Utilizing the Spin Hall Effect and Interlayer Exchange Coupling of Iridium
Magnetization switching by spin-orbit torque (SOT) via spin Hall effect represents as a competitive alternative to that by spin-transfer torque (STT) used for magnetoresistive random access memory (MRAM), as it doesn’t require high-density current to go through the tunnel junction. For perpendicular MRAM, however, SOT driven switching of the free layer requires an external in-plane field, which poses limitation for viability in practical applications. Here we demonstrate field-free magnetization switching of a perpendicular magnet by utilizing an Iridium (Ir) layer. The Ir layer not only provides SOTs via spin Hall effect, but also induce interlayer exchange coupling with an in-plane magnetic layer that eliminates the need for the external field. Such dual functions of the Ir layer allows future build-up of magnetoresistive stacks for memory and logic applications. Experimental observations show that the SOT driven field-free magnetization reversal is characterized as domain nucleation and expansion. Micromagnetic modeling is carried out to provide in-depth understanding of the perpendicular magnetization reversal process in the presence of an in-plane exchange coupling field.
Science & Technology - Other Topics↗
Temperature dependence of the Dzyaloshinskii-Moriya interaction in Pt/Co/Cu thin film heterostructures
Magnetic materials that exhibit chiral domain walls are of great interest for spintronic devices. In this work, we examine the temperature-dependent behavior of the Dzyaloshinskii-Moriya interaction (DMI) in Pt/Co/Cu thin film heterostructures. We extract the DMI strength, D , from static domain spacing analysis between 300 K and 500 K and compare its temperature dependence to that of the magnetic anisotropy, K u , and saturation magnetization, M s . Consistent with expected scaling in thin films, M s exhibits Bloch-law temperature scaling and K u scales as M s 2.1±0.1 .
36 MATERIALS SCIENCE↗
Observation of cyclotron resonance and measurement of the hole mass in optimally doped La 2–x Sr x CuO 4
Using time-domain terahertz spectroscopy in pulsed magnetic fields up to 31 T, we measure the terahertz optical conductivity in an optimally doped thin film of the high-temperature superconducting cuprate La 1.84 Sr 0.16 CuO 4 . We observe systematic changes in the circularly polarized complex optical conductivity that are consistent with cyclotron absorption of p-type charge carriers characterized by a cyclotron mass of 4.9m e ± 0.8m e and a scattering rate that increases with magnetic field. Furthermore, these results open the door to studies aimed at characterizing the degree to which electron-electron interactions influence carrier masses in cuprate superconductors.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Iron nitride permanent magnet and technique for forming iron nitride permanent magnet
A bulk permanent magnetic material may include between about 5 volume percent and about 40 volume percent Fe16N2 phase domains, a plurality of nonmagnetic atoms or molecules forming domain wall pinning sites, and a balance soft magnetic material, wherein at least some of the soft magnetic material is magnetically coupled to the Fe16N2 phase domains via exchange spring coupling. In some examples, a bulk permanent magnetic material may be formed by implanting N+ ions in an iron workpiece using ion implantation to form an iron nitride workpiece, pre-annealing the iron nitride workpiece to attach the iron nitride workpiece to a substrate, and post-annealing the iron nitride workpiece to form Fe16N2 phase domains within the iron nitride workpiece.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Iron nitride permanent magnet and technique for forming iron nitride permanent magnet
A bulk permanent magnetic material may include between about 5 volume percent and about 40 volume percent Fe16N2 phase domains, a plurality of nonmagnetic atoms or molecules forming domain wall pinning sites, and a balance soft magnetic material, wherein at least some of the soft magnetic material is magnetically coupled to the Fe16N2 phase domains via exchange spring coupling. In some examples, a bulk permanent magnetic material may be formed by implanting N+ ions in an iron workpiece using ion implantation to form an iron nitride workpiece, pre-annealing the iron nitride workpiece to attach the iron nitride workpiece to a substrate, and post-annealing the iron nitride workpiece to form Fe16N2 phase domains within the iron nitride workpiece.
Wang, Jian-Ping↗
Spin–orbit torque in a three-fold-symmetric bilayer and its effect on magnetization dynamics
Field-free switching of perpendicular magnetization has previously been observed in an epitaxial L1 1 -ordered CoPt/CuPt bilayer and attributed to spin–orbit torque (SOT) arising from the crystallographic 3m point group of the interface. Using a first-principles nonequilibrium Green's function formalism combined with the Anderson disorder model, we calculate the angular dependence of the SOT in a CoPt/CuPt bilayer and find that the magnitude of the 3m SOT is about 20% of the conventional dampinglike SOT. We further study the magnetization dynamics in perpendicularly magnetized films in the presence of 3m SOT and Dzyaloshinskii–Moriya interaction, using the equations of motion for domain wall dynamics and micromagnetic simulations. For systems where strong interfacial DMI results in the Néel character of domain walls, we find that a very large current density is required to achieve deterministic switching, because reorientation of the magnetization inside the domain wall is necessary to induce the switching asymmetry. For thicker films with relatively weak interfacial DMI and the Bloch character of domain walls, deterministic switching is possible at much smaller current densities, which may explain the recent experimental findings.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Error-Free and Current-Driven Synthetic Antiferromagnetic Domain Wall Memory Enabled by Channel Meandering
We propose a new type of energy-efficient multi-bit magnetic memory based on current-driven, field-free, controlled domain wall motion. A meandering domain wall channel with precisely interspersed pinning regions provides the multi-bit capability of a magnetic tunnel junction memory. The magnetic free layer of the memory device has perpendicular magnetic anisotropy (PMA) and interfacial Dzyaloshinskii-Moriya interaction (DMI) so that spin-orbit torques (SOTs) induce efficient domain wall motion. Using micromagnetic simulations, we find two different cell designs: two-way switching and four-way switching. The memory cell design choices and the physics of pinning mechanisms are discussed in detail. Furthermore, we show that switching reliability and speed may be significantly improved by replacing the ferromagnetic free layer with a synthetic antiferromagnetic (SAF) layer. Switching behavior and material choices will be discussed for the two memory implementations.
magnetic domain wall↗
Strong Damping‐Like Spin‐Orbit Torque and Tunable Dzyaloshinskii–Moriya Interaction Generated by Low‐Resistivity Pd 1− x Pt x Alloys
Abstract Despite their great promise for providing a pathway for very efficient and fast manipulation of magnetization, spin‐orbit torque (SOT) operations are currently energy inefficient due to a low damping‐like SOT efficiency per unit current bias, and/or the very high resistivity of the spin Hall materials. This work reports an advantageous spin Hall material, Pd 1− x Pt x , which combines a low resistivity with a giant spin Hall effect as evidenced with three independent SOT ferromagnetic detectors. The optimal Pd 0.25 Pt 0.75 alloy has a giant internal spin Hall ratio of >0.60 (damping‐like SOT efficiency of ≈0.26 for all three ferromagnets) and a low resistivity of ≈57.5 µΩ cm at a 4 nm thickness. Moreover, it is found that the Dzyaloshinskii–Moriya interaction (DMI), the key ingredient for the manipulation of chiral spin arrangements (e.g., magnetic skyrmions and chiral domain walls), is considerably strong at the Pd 1− x Pt x /Fe 0.6 Co 0.2 B 0.2 interface when compared to that at Ta/Fe 0.6 Co 0.2 B 0.2 or W/Fe 0.6 Co 0.2 B 0.2 interfaces and can be tuned by a factor of 5 through control of the interfacial spin‐orbital coupling via the heavy metal composition. This work establishes a very effective spin current generator that combines a notably high energy efficiency with a very strong and tunable DMI for advanced chiral spintronics and spin torque applications.
Zhu, Lijun↗
Critical role of orbital hybridization in the Dzyaloshinskii-Moriya interaction of magnetic interfaces
Dzyaloshinskii-Moriya interaction (DMI), an interfacial spin-orbit coupling (ISOC)-related effect, has become foundational for spintronic research and magnetic memory and computing technologies. However, the underlying mechanism of DMI, including the quantitative role of ISOC, has remained a long-standing unsettled problem due to the great challenge in quantifying and widely tuning ISOC strength in a strong DMI material system. Here, we find that DMI, ISOC, and orbital hybridization at the model magnetic interface Au 1-x Pt x /Co can be quantified and tuned significantly at the same time through the composition of the Au 1-x Pt x , without varying the bulk SOC and the electronegativity. From this ability, we establish that the widespread expectation that DMI should scale in linear proportion to ISOC breaks down at the Au 1-x Pt x /Co interface where degree of orbital hybridization varies with the Au 1-x Pt x composition and that the unexpected DMI behaviors can be understood well by the critical role of orbital hybridization. Our study provides a quantitative frame for comprehensively understanding interfacial DMI of various magnetic interfaces and establishes orbital hybridization as a new degree of freedom for controlling DMI in high-performance chiral domain wall/skyrmion devices and ultrafast magnetic tunnel junctions.
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
Characterization of the lid-driven cavity magnetohydrodynamic flow at finite magnetic Reynolds numbers using far-field magnetic boundary conditions
The lid-driven cavity (LDC) flow is a canonic hydrodynamic problem. In this work, a 3D LDC flow of electrically conducting, incompressible fluid is studied numerically in the presence of a strong magnetic field, which is applied parallel to the lid plane and perpendicular to the direction of the lid motion. The cavity has electrically conducting walls of finite thickness and an infinitely thin moving lid. The problem is characterized by three dimensionless parameters: the Reynolds number ( Re ), the Hartmann number ( Ha ), and the magnetic Reynolds number ( Re m ). The primary research focus is on the effect of Re m , which was changed in the study from Re m $\ll$ 1 to the maximal Re m = 2000 at which dynamo action may be expected, while Ha = 100 and Re = 2000. The computational approach is based on the utilization of far-field magnetic boundary conditions by solving the full magnetohydrodynamic (MHD) flow problem at finite Re m for a multi-material domain composed of the inner conducting liquid, conducting walls, and sufficiently large insulating outer domain called “vacuum” (the induced magnetic field vanishes at the vacuum boundaries) using a fractional-step method. Lastly, the computed results show many interesting features with regard to the effect of Re m on the MHD boundary layer and the bulk flow, generation of a magnetic field and its penetration into vacuum, energy balance, tendency of the magnetic field to become frozen in the fluid and associated magnetic flux expulsion, transition to unsteady flows, and self-excitation of the magnetic field and the associated dynamo-type action at high Re m
42 ENGINEERING↗
Real-space imaging of periodic nanotextures in thin films via phasing of diffraction data
New properties and exotic quantum phenomena can form due to periodic nanotextures, including Moire patterns, ferroic domains, and topologically protected magnetization and polarization textures. Despite the availability of powerful tools to characterize the atomic crystal structure, the visualization of nanoscale strain-modulated structural motifs remains challenging. Here, we develop nondestructive real-space imaging of periodic lattice distortions in thin epitaxial films and report an emergent periodic nanotexture in a Mott insulator. Specifically, we combine iterative phase retrieval with unsupervised machine learning to invert the diffuse scattering pattern from conventional X-ray reciprocal-space maps into real-space images of crystalline displacements. Our imaging in PbTiO 3 /SrTiO 3 superlattices exhibiting checkerboard strain modulation substantiates published phase-field model calculations. Furthermore, the imaging of biaxially strained Mott insulator Ca 2 RuO 4 reveals a strain-induced nanotexture comprised of nanometer-thin metallic-structure wires separated by nanometer-thin Mott-insulating-structure walls, as confirmed by cryogenic scanning transmission electron microscopy (cryo-STEM). The nanotexture in Ca 2 RuO 4 film is induced by the metal-to-insulator transition and has not been reported in bulk crystals. We expect the phasing of diffuse X-ray scattering from thin crystalline films in combination with cryo-STEM to open a powerful avenue for discovering, visualizing, and quantifying the periodic strain-modulated structures in quantum materials.
Science & Technology - Other Topics↗
Investigating event-shape methods in the search for the chiral magnetic effect in relativistic heavy ion collisions
The chiral magnetic effect (CME) is a phenomenon in which electric charge is separated by a strong magnetic field from local domains of chirality imbalance and parity violation in quantum chromodynamics. The CME-sensitive observable, the charge-dependent three-point azimuthal correlator Δ𝛾 , is contaminated by a major physics background proportional to the particle's elliptic flow anisotropy 𝑣 2 . Event-shape engineering (ESE) binning events in dynamical fluctuations of 𝑣 2 and event-shape selection (ESS) binning events in statistical fluctuations of 𝑣 2 are two methods to search for the CME by projecting Δ𝛾 to the measured anisotropy 𝑣 2 = 0 intercept. Here, we conduct a systematic study of these two methods using physics models as well as toy model simulations. It is observed that the ESE method fulfills the general premise of measuring the CME but is statistically hungry. It is found that the intercept from the ESS method depends on the details of the event content, such as the mixtures of background-contributing sources, because of statistical fluctuations of intertwining variables used in the method, and is thus not practically useful to measure the CME.
Relativistic heavy-ion collisions↗
Static and dynamic topological defects in the domain textures in the helical antiferromagnet Ni 2 CoTeO 6
Real-space Bragg coherent x-ray-diffractive imaging unveils the formation of bubble and stripe antiferromagnetic (AFM) phase domains on the surface of Ni 2 CoTeO 6 single crystal. The stripe domains exhibit dislocation-type topological defects. The defects typically form as defect-antidefect pairs and can be created or annihilated by temperature changes and local heating. Thermal fluctuations of the AFM domain walls are observed near the Néel temperature. Topological defect pairs dynamically form and disappear in the fluctuating state. These observations provide a real-space perspective on the dynamics of the AFM phase transition in a helical antiferromagnet. Finally, the remarkable tunability of AFM domain walls in a helical antiferromagnet underscores their potential for AFM spintronics applications.
36 MATERIALS SCIENCE↗
Influence of the chiral magnetic effect on particle-pair elliptic anisotropy
The chiral magnetic effect (CME) is a phenomenon in which electric charge is separated by a strong magnetic field from local domains of chirality imbalance in quantum chromodynamics. The CME-sensitive, azimuthal correlator difference Δ𝛾 between opposite-sign (OS) and same-sign (SS) charged hadron pairs is contaminated by a major physics background proportional to the particle elliptic anisotropy (𝑣 2 ). The CME signal, on the other hand, contributes to the difference in the pair elliptic anisotropies between OS and SS pairs (Δ 𝑣 2,pair ). We investigate Δ 𝑣 2,pair and find its sensitivity to CME to be similar to that of the Δ𝛾 observable.
Particle correlations & fluctuations↗
An African-Specific Variant of TP5 3 Reveals PADI4 as a Regulator of p53-Mediated Tumor Suppression
TP53 is the most frequently mutated gene in cancer, yet key target genes for p53-mediated tumor suppression remain unidentified. Here, we characterize a rare, African-specific germline variant of TP53 in the DNA-binding domain Tyr107His (Y107H). Nuclear magnetic resonance and crystal structures reveal that Y107H is structurally similar to wild-type p53. Consistent with this, we find that Y107H can suppress tumor colony formation and is impaired for the transactivation of only a small subset of p53 target genes; this includes the epigenetic modifier PADI4, which deiminates arginine to the nonnatural amino acid citrulline. Surprisingly, we show that Y107H mice develop spontaneous cancers and metastases and that Y107H shows impaired tumor suppression in two other models. We show that PADI4 is itself tumor suppressive and that it requires an intact immune system for tumor suppression. We identify a p53–PADI4 gene signature that is predictive of survival and the efficacy of immune-checkpoint inhibitors.
60 APPLIED LIFE SCIENCES↗
Pinning-Induced Vortex-System Disordering at the Origin of the Second Magnetization Peak in Superconducting Single Crystals
The nature of the second magnetization peak (SMP) appearing on the dc magnetic hysteresis curves of superconducting single crystals with random pinning is still under debate. Many interesting SMP models and mechanisms were proposed and considered so far, and it is believed at present that this effect is system dependent. We analyzed the dc magnetization curves and the magnetic relaxation in the SMP domain for various single-crystal specimens (superconducting cuprates and iron-based superconductors), of different pinning strengths, with the external magnetic field H oriented along the crystallographic c axis or perpendicular to it. The sample independent aspects revealed by the relaxation results are the absence of single-vortex collective pinning around the SMP onset field and the sign changing of the vortex creep exponent between the onset field and the peak field. This general behavior supports strongly the pinning-induced disordering of the low-H quasi-ordered vortex solid as the actual scenario for the SMP.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Topological Defects in Helical Magnets
Helical magnets which violated space inversion symmetry have rather peculiar topological defects. In isotropic helical magnets with exchange and Dzyaloshinskii–Moriya interactions, there are only three types of linear defects: ±π and 2π-disclinations. Weak crystal anysotropy suppresses linear defects on large scale. Instead, planar defects appear: domain walls that separate domains with different preferential directions of helical wavevectors. The appearance of such domain walls in the bulk helical magnets and some of their properties were predicted in the work [1]. In a recent work by an international team of experimenters and theorists [2], the existence of new types of domain walls on crystal faces of helical magnet FeGe was discovered. They have many features predicted by theory [1], but display also unexpected properties, one of them is the possibility of arbitrary angle between helical wavevectors. Depending on this angle, the domain walls observed in [2] can be divided in two classes: smooth and zig-zag. This article contains a mini-review of the existing theory and experiment. It also contains new results that explain why in a system with continuous orientation of helical wavevectors domain walls are possible. We discuss why and at what conditions smooth and zig-zag domain walls appear, analyze spin textures associated with helical domain walls, and find the dependence of their width on the angle between helical wavevectors.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗