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At least 325 records · Page 18

Metastable states in the frustrated triangular compounds Ca 3 Co 2 - x Mn x O 6 and Ca 3 Co 2 O 6

The observation of unusual metastable behavior in Ca 3 Co 2 O 6 remains an ongoing puzzle. When the magnetic field is increased at certain very slow rates, evenly spaced steps occur in the magnetization and other physical quantities as a function of magnetic field every 1.2 T. The ground state without steps is approached by slow relaxation processes over hours to days. It is a striking example of extremely slow dynamics arising from geometrical frustration in an otherwise clean and long-range ordered system, and its precise description remains controversial. Here we shed light on the mystery by reporting similar behavior in isostructural Ca 3 Co 2-x MnxO 6 , albeit at magnetic field sweep rates that are six orders of magnitude faster than that in Ca 3 Co 2 O 6 . We observe these steps not only in the magnetization, but also in the magnetostriction, electric polarization, and magnetocaloric effect. Here, we present a study of metastable behavior in both compounds across seven orders of magnitude of magnetic field sweep rates using unique magnets at the National High Magnetic Field Laboratory. The metastable steps occur for intermediate ranges of magnetic field sweep rates, vanishing or evolving for the fastest and slowest sweep rates. Our data support that these metastable steps are an intrinsic feature of the three-dimensionally frustrated geometry of Ising spins in this structural family and thus narrow the number of applicable models.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Control of SiC Based Integrated DC-DC Powertrain Charger for Electric Vehicles

In this paper, an automated controller for an integrated, reconfigurable dc-dc converter for plugin electric vehicles (EVs) is presented. The integrated converter combines both an interleaved boost converter and dual active bridge (DAB) converter, sharing magnetics and switching devices. The converter switches between operating modes using the existing battery management system (BMS) contactors. The integrated converter operates in isolated DAB mode during battery charging operation. During traction operation, the integrated converter is operated in interleaved boost mode for heavy load and DAB mode during light load, high voltage operation. An online transition algorithm is used to transition from interleaved boost mode to DAB mode with minimal bus distortion. The automated controller selects the operating mode and inverter bus voltage at different torque-speed conditions to get maximum overall traction drive efficiency. An experimental prototype of the integrated converter demonstrates the automated controller functionality.

Anwar, Saeed↗

PIP-II Injector Test Warm Front End: Commissioning Update [Slides]

The Warm Front End (WFE) of the Proton Improvement Plan II Injector Test (PIP2IT) at Fermilab has been constructed to its full length. It includes a 15-mA DC, 30-keV H- ion source, a 2 m-long Low Energy Beam Transport (LEBT) with a switching dipole magnet, a 2.1 MeV CW RFQ, followed by a Medium Energy Beam Transport (MEBT) with various diagnostics and a dump. This report presents the commissioning status, focusing on beam measurements in the MEBT. In particular, a beam with the parameters required for injection into the Booster (5 mA, 0.55 ms macro-pulse at 20 Hz) was transported through the WFE.

43 PARTICLE ACCELERATORS↗

X-Ray and Optical Study of the Gamma-ray Source 3FGL J0838.8–2829: Identification of a Candidate Millisecond Pulsar Binary and an Asynchronous Polar

We observed the field of the Fermi source 3FGL J0838.8−2829 in optical and X-rays, initially motivated by the cataclysmic variable (CV) 1RXS J083842.1−282723 that lies within its error circle. Several X-ray sources first classified as CVs have turned out to be γ -ray emitting millisecond pulsars (MSPs). We find that 1RXS J083842.1−282723 is in fact an unusual CV, a stream-fed asynchronous polar in which accretion switches between magnetic poles (that are ≈120° apart) when the accretion rate is at minimum. High-amplitude X-ray modulation at periods of 94.8 ± 0.4 minutes and 14.7 ± 1.2 hr are seen. The former appears to be the spin period, while the latter is inferred to be one-third of the beat period between the spin and the orbit, implying an orbital period of 98.3 ± 0.5 minutes. We also measure an optical emission-line spectroscopic period of 98.413 ± 0.004 minutes, which is consistent with the orbital period inferred from the X-rays. In any case, this system is unlikely to be the γ -ray source. Instead, we find a fainter variable X-ray and optical source, XMMU J083850.38−282756.8, that is modulated on a timescale of hours in addition to exhibiting occasional sharp flares. It resembles the black widow or redback pulsars that have been discovered as counterparts of Fermi sources, with the optical modulation due to heating of the photosphere of a low-mass companion star by, in this case, an as-yet undetected MSP. We propose XMMU J083850.38−282756.8 as the MSP counterpart of 3FGL J0838.8−2829.

79 ASTRONOMY AND ASTROPHYSICS↗

PIP-II Injector Test Warm Front End: Commissioning Update

The Warm Front End (WFE) of the Proton Improvement Plan II Injector Test [1] at Fermilab has been constructed to its full length. It includes a 15-mA DC, 30-keV H- ion source, a 2 m-long Low Energy Beam Transport (LEBT) with a switching dipole magnet, a 2.1 MeV CW RFQ, followed by a Medium Energy Beam Transport (MEBT) with various diagnostics and a dump. This report presents the commissioning status, focusing on beam measurements in the MEBT. In particular, a beam with the parameters required for injection into the Booster (5 mA, 0.55 ms macro-pulse at 20 Hz) was transported through the WFE.

43 PARTICLE ACCELERATORS↗

Electrical switching of a p-wave magnet

Magnetic states with zero magnetization but non-relativistic spin splitting are outstanding candidates for the next generation of spintronic devices. Their electronvolt (eV)-scale spin splitting, ultrafast spin dynamics and nearly vanishing stray fields make them particularly promising for several applications. A variety of such magnetic states with non-trivial spin textures have been identified recently, including even-parity d-wave, g-wave or i-wave altermagnets and odd-parity p-wave magnets. Achieving voltage-based control of the non-uniform spin polarization of these magnetic states is of great interest for realizing energy-efficient and compact devices for information storage and processing. Spin-spiral type II multiferroics are optimal candidates for such voltage-based control, as they exhibit an inversion-symmetry-breaking magnetic order that directly induces ferroelectric polarization, allowing for symmetry-protected cross-control between spin chirality and polar order. Here we combine photocurrent measurements, first-principles calculations and group-theory analysis to provide direct evidence that the spin polarization of the spin-spiral type II multiferroic NiI 2 exhibits odd-parity character connected to the spiral chirality. The symmetry-protected coupling between chirality and polar order enables electrical control of a primarily non-relativistic spin polarization. Our findings represent an observation of p-wave magnetism in a spin-spiral type II multiferroic, which may lead to the development of voltage-based switching of non-relativistic spin polarization in compensated magnets.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Progress toward picosecond on-chip magnetic memory

Here, we offer a perspective on the prospects of ultrafast spintronics and opto-magnetism as a pathway to high-performance, energy-efficient, and non-volatile embedded memory in digital integrated circuit applications. Conventional spintronic devices, such as spin-transfer-torque magnetic-resistive random-access memory (STT-MRAM) and spin–orbit torque MRAM, are promising due to their non-volatility, energy-efficiency, and high endurance. STT-MRAMs are now entering into the commercial market; however, they are limited in write speed to the nanosecond timescale. Improvement in the write speed of spintronic devices can significantly increase their usefulness as viable alternatives to the existing CMOS-based devices. In this article, we discuss recent studies that advance the field of ultrafast spintronics and opto-magnetism. An optimized ferromagnet–ferrimagnet exchange-coupled magnetic stack, which can serve as the free layer of a magnetic tunnel junction (MTJ), can be optically switched in as fast as ~3 ps. Integration of ultrafast magnetic switching of a similar stack into an MTJ device has enabled electrical readout of the switched state using a relatively larger tunneling magnetoresistance ratio. Purely electronic ultrafast spin–orbit torque induced switching of a ferromagnet has been demonstrated using ~6 ps long charge current pulses. We conclude our Perspective by discussing some of the challenges that remain to be addressed to accelerate ultrafast spintronics technologies toward practical implementation in high-performance digital information processing systems.

42 ENGINEERING↗

Magnetization reversal in ferromagnetic thin films induced by spin-orbit interaction with Slonczewski-like spin transfer torque

We theoretically investigate the dynamics of magnetization in ferromagnetic thin films induced by spin-orbit interaction with Slonczewski-like spin transfer torque. We reproduce the experimental results of perpendicular magnetic anisotropy films by micromagnetic simulation. Due to the spin-orbit interaction, the magnetization can be switched by changing the direction of the current with the assistant of magnetic field. By increasing the current amplitude, wider range of switching events can be achieved. Time evolution of magnetization has provided us a clear view of the process, and explained the role of minimum external field. Slonczewski-like spin transfer torque modifies the magnetization when current is present. The magnitude of the minimum external field is determined by the strength of the Slonczewski-like spin transfer torque. The investigations may provide potential applications in magnetic memories.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Observation of current-induced switching in non-collinear antiferromagnetic IrMn 3 by differential voltage measurements

There is accelerating interest in developing memory devices using antiferromagnetic (AFM) materials, motivated by the possibility for electrically controlling AFM order via spin-orbit torques, and its read-out via magnetoresistive effects. Recent studies have shown, however, that high current densities create non-magnetic contributions to resistive switching signals in AFM/heavy metal (AFM/HM) bilayers, complicating their interpretation. Here we introduce an experimental protocol to unambiguously distinguish current-induced magnetic and nonmagnetic switching signals in AFM/HM structures, and demonstrate it in IrMn 3 /Pt devices. A six-terminal double-cross device is constructed, with an IrMn 3 pillar placed on one cross. The differential voltage is measured between the two crosses with and without IrMn 3 after each switching attempt. For a wide range of current densities, reversible switching is observed only when write currents pass through the cross with the IrMn 3 pillar, eliminating any possibility of non-magnetic switching artifacts. Micromagnetic simulations support our findings, indicating a complex domain-mediated switching process.

36 MATERIALS SCIENCE↗

Magnetoresistance effects and spin-valve like behavior of an arrangement of two MnAs nanoclusters

We report on magnetotransport measurements on a MnAs nanocluster arrangement consisting of two elongated single-domain clusters connected by a metal spacer. The arrangement was grown on GaAs(111)B-substrates by selective-area metal organic vapor phase epitaxy. Its structural properties were investigated using scanning-electron microscopy and atomic-force microscopy, while its magnetic domain structure was analyzed by magnetic-force microscopy. The magnetoresistance of the arrangement was investigated at 120 K for two measurement geometries with the magnetic field oriented in the sample plane. For both geometries, discrete jumps of the magnetoresistance of the MnAs nanocluster arrangement were observed. These jumps can be explained by magnetic-field induced switching of the relative orientation of the magnetizations of the two clusters which affects the spin-dependent scattering in the interface region between the clusters. For a magnetic field orientation parallel to the nanoclusters' elongation direction a spin-valve like behavior was observed, showing that ferromagnetic nanoclusters may be suitable building blocks for planar magnetoelectronic devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Anomalous Thermal Hall Effect in an Insulating van der Waals Magnet

Two-dimensional (2D) van der Waals (vdW) magnets have been a fertile playground for the discovery and exploration of physical phenomena and new physics. In this Letter, we report the observation of an anomalous thermal Hall effect (THE) with κ xy ~ 1 × 10 -2 WK -1 m -1 in an insulating van der Waals ferromagnet VI 3 . The thermal Hall signal persists in the absence of an external magnetic field and flips sign upon the switching of the magnetization. In combination with theoretical calculations, we show that VI 3 exhibits a dual nature of the THE, i.e., dominated by topological magnons hosted by the ferromagnetic honeycomb lattice at higher temperatures and by phonons induced by the magnon-phonon coupling at lower temperatures. Our results not only position VI 3 as the first ferromagnetic system to investigate both anomalous magnon and phonon THEs, but also render it as a potential platform for spintronics-magnonics applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Analysis of the Switching Characteristics of MRAM Cells Based on Materials with Uniaxial Anisotropy

Magnetoresistive random access memory (MRAM) has some advantages over other types of memory. However, MRAM has one substantial drawback: the current density and magnetic field that must be applied to switch the spin-valve free layer inside an MRAM cell are too high. The dependence of the current density and switching magnetic field on the magnetic parameters of the material from which the ferromagnetic layers of a spin valve are fabricated is therefore analyzed. A comparison of the critical characteristics of a spin valve with longitudinal anisotropy shows that cobalt, iron, and alloys of them; cobalt ferroborates; and alloys of cobalt with gadolinium, are promising materials for fabricating spin valves. Bifurcation diagrams of equations that describe the valve switching process are presented and analyzed. The four optimum switching modes of a valve are selected, based on an investigation of the dynamics of the magnetization vector. The magnitudes of the external magnetic field and controlling injection current that correspond to stable MRAM cell switching are compared for a variety of materials. The switching time of an MRAM cell is estimated numerically, and the conditions for its optimum speed are determined. It is established that the most promising materials for spin-valve fabrication are Fe{sub 40}Co{sub 40}B{sub 20} and Co{sub 80}Gd{sub 20}, annealed at 300 and 200°C, respectively.

36 MATERIALS SCIENCE↗

Fundamental limits in heat-assisted magnetic recording and methods to overcome it with exchange spring structures

The switching probability of magnetic elements for heat-assisted recording with pulsed laser heating was investigated. It was found that FePt elements with a diameter of 5 nm and a height of 10 nm show, at a field of 0.5 T, thermally written-in errors of 12%, which is significantly too large for bit-patterned magnetic recording. Thermally written-in errors can be decreased if larger-head fields are applied. However, larger fields lead to an increase in the fundamental thermal jitter. This leads to a dilemma between thermally written-in errors and fundamental thermal jitter. This dilemma can be partly relaxed by increasing the thickness of the FePt film up to 30 nm. For realistic head fields, it is found that the fundamental thermal jitter is in the same order of magnitude of the fundamental thermal jitter in conventional recording, which is about 0.5–0.8 nm. Composite structures consisting of high Curie top layer and FePt as a hard magnetic storage layer can reduce the thermally written-in errors to be smaller than 10{sup −4} if the damping constant is increased in the soft layer. Large damping may be realized by doping with rare earth elements. Similar to single FePt grains in composite structure, an increase of switching probability is sacrificed by an increase of thermal jitter. Structures utilizing first-order phase transitions breaking the thermal jitter and writability dilemma are discussed.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Superconducting Magnet Power Supply and Hard-Wired Quench Protection at Jefferson Lab for 12 GeV Upgrade

The superconducting magnet system in Hall B being designed and built as part of the Jefferson Lab 12 GeV upgrade requires powering two conduction cooled superconducting magnets - a torus and a solenoid. The torus magnet is designed to operate at 3770 A and solenoid at 2416 A. Failure Modes and Effects Analysis (FMEA) determined that voltage level thresholds and dump switch operation for magnet protection should be tested and analyzed before incorporation into the system. The designs of the quench protection and voltage tap sub-systems were driven by the requirement to use a primary hard-wired quench detection sub-system together with a secondary PLC-based protection. Parallel path voltage taps feed both the primary and secondary quench protection sub-systems. The PLC based secondary protection is deployed as a backup for the hard-wired quench detection sub-system and also acts directly on the dump switch. Here, we describe a series of tests and modifications carried out on the magnet power supply and quench protection system to ensure that the superconducting magnet is protected for all fault scenarios.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Collective spin dynamics under dissipative spin Hall torque

Current-induced spin torques in layered magnetic heterostructures have many commonalities across broad classes of magnetic materials. These include not only collinear ferromagnets, ferrimagnets, and antiferromagnets but also more complex noncollinear spin systems. We develop a general Lagrangian–Rayleigh approach for studying the role of dissipative torques, which can pump energy into long-wavelength magnetic dynamics, causing dynamic instabilities. While the Rayleigh structure of such torques is similar for different magnetic materials, their consequences depend sensitively on the nature of the order and, in particular, on whether there is a net magnetic moment. The latter endows the system with a unipolar switching capability, while magnetically compensated materials tend to evolve toward limit cycles, at large torques, with chirality dependent on the torque sign. Apart from the ferromagnetic and antiferromagnetic cases, we discuss ferrimagnets, which display an intricate competition between switching and limit cycles. As a simple case for compensated noncollinear order, we consider isotropic spin glasses and a scenario of their coexistence with a collinear magnetic order.

Tserkovnyak, Yaroslav (ORCID:0000000232773695)↗