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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 325 records · Page 18
All sourcesNASA NTRSDOE OSTI
DOE OSTI2019

Femtosecond x-ray diffraction reveals a liquid–liquid phase transition in phase-change materials

In phase-change memory devices, a material is cycled between glassy and crystalline states. The highly temperature-dependent kinetics of its crystallization process enables application in memory technology, but the transition has not been resolved on an atomic scale. Using femtosecond x-ray diffraction and ab initio computer simulations, we determined the time-dependent pair-correlation function of phase-change materials throughout the melt-quenching and crystallization process. We found a liquid–liquid phase transition in the phase-change materials Ag 4 In 3 Sb 67 Te 26 and Ge 15 Sb 85 at 660 and 610 kelvin, respectively. The transition is predominantly caused by the onset of Peierls distortions, the amplitude of which correlates with an increase of the apparent activation energy of diffusivity. This reveals a relationship between atomic structure and kinetics, enabling a systematic optimization of the memory-switching kinetics.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2017

Electron-beam-induced-current and active secondary-electron voltage-contrast with aberration-corrected electron probes

The ability to map out electrostatic potentials in materials is critical for the development and the design of nanoscale electronic and spintronic devices in modern industry. Electron holography has been an important tool for revealing electric and magnetic field distributions in microelectronics and magnetic-based memory devices, however, its utility is hindered by several practical constraints, such as charging artifacts and limitations in sensitivity and in field of view. In this article, we report electron-beam-induced-current (EBIC) and secondary-electron voltage-contrast (SE-VC) with an aberration-corrected electron probe in a transmission electron microscope (TEM), as complementary techniques to electron holography, to measure electric fields and surface potentials, respectively. These two techniques were applied to ferroelectric thin films, multiferroic nanowires, and single crystals. Electrostatic potential maps obtained by off-axis electron holography were compared with EBIC and SE-VC to show that these techniques can be used as a complementary approach to validate quantitative results obtained from electron holography analysis.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2017

Polarization-coupled tunable resistive behavior in oxide ferroelectric heterostructures

This research focuses on investigation of the physical mechanism of the electrically and mechanically tunable resistive behavior in oxide ferroelectric heterostructures with engineered interfaces realized via a strong coupling of ferroelectric polarization with tunneling electroresistance and metal-insulator (M-I) transitions. This report describes observation of electrically conductive domain walls in semiconducting ferroelectrics, voltage-free control of resistive switching and demonstration of a new mechanism of electrical control of 2D electron gas (2DEG) at oxide interfaces. The research goals are achieved by creating strong synergy between cutting-edge fabrication of epitaxial single-crystalline complex oxides, nanoscale electrical characterization by scanning probe microscopy and theoretical modeling of the observed phenomena. The concept of the ferroelectric devices with electrically and mechanically tunable nonvolatile resistance represents a new paradigm shift in realization of the next-generation of non-volatile memory devices and low-power logic switches.

36 MATERIALS SCIENCE↗
DOE OSTI2014

LastingNVCache: A Technique for Improving the Lifetime of Non-volatile Caches

Use of NVM (Non-volatile memory) devices such as ReRAM (resistive RAM) and STT-RAM (spin transfer torque RAM) for designing on-chip caches holds the promise of providing a high-density, low-leakage alternative to SRAM. However, low write endurance of NVMs, along with the write-variation introduced by existing cache management schemes may significantly limit the lifetime of NVM caches. We present LastingNVCache, a technique for improving lifetime of NVM caches by mitigating the intra-set write variation. LastingNVCache works on the key idea that by periodically flushing a frequently-written data-item, the next time the block can be made to load into a cold block in the set. Through this, the future writes to that data-item can be redirected from a hot block to a cold block, which leads to improvement in the cache lifetime. Microarchitectural simulations have shown that LastingNVCache provides 6.36X, 9.79X, and 10.94X improvement in lifetime for single, dual and quad-core systems. Also, its implementation overhead is small and it outperforms a recently proposed technique for improving lifetime of NVM caches.

device lifetime↗
DOE OSTI2013

Using DMA for copying performance counter data to memory

A device for copying performance counter data includes hardware path that connects a direct memory access (DMA) unit to a plurality of hardware performance counters and a memory device. Software prepares an injection packet for the DMA unit to perform copying, while the software can perform other tasks. In one aspect, the software that prepares the injection packet runs on a processing core other than the core that gathers the hardware performance data.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2012

Using DMA for copying performance counter data to memory

A device for copying performance counter data includes hardware path that connects a direct memory access (DMA) unit to a plurality of hardware performance counters and a memory device. Software prepares an injection packet for the DMA unit to perform copying, while the software can perform other tasks. In one aspect, the software that prepares the injection packet runs on a processing core other than the core that gathers the hardware performance counter data.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2017

3-D Magnetization Mapping Microscope (360 video)

Science in 360°: The incredibly complex device in this video is one of the few electron microscopes worldwide that can image magnetization in 3-D, which is key to improving materials for computer memory devices. Located at Berkeley Lab's Molecular Foundry, the microscope is called SPLEEM (Spin-Polarized Low Energy Electron Microscope), and it’s one of the many reasons that scientists from around the world come to the Foundry.

47 OTHER INSTRUMENTATION↗
NASA NTRS1975

One-dimensional multimode and multistate oscillator: A concept

Device's voltage amplitude distribution is similar to that of standing waves on transmission line. It can be used for fast, efficient information encoding, decoding, and memory. Device operates in response to brief tone burst setting up standing-wave mode of oscillation which is unique for each possible burst frequency.

Aumann, H. M.↗
NASA NTRS1979

Cosmic ray-induced soft errors in static MOS memory cells

Previous analytical models were extended to predict cosmic ray-induced soft error rates in static MOS memory devices. The effect is due to ionization and can be introduced by high energy, heavy ion components of the galactic environment. The results indicate that the sensitivity of memory cells is directly related to the density of the particular MOS technology which determines the node capacitance values. Hence, CMOS is less sensitive than e.g., PMOS. In addition, static MOS memory cells are less sensitive than dynamic ones due to differences in the mechanisms of storing bits. The flip-flop of a static cell is inherently stable against cosmic ray-induced bit flips. Predicted error rates on a CMOS RAM and a PMOS shift register are in general agreement with previous spacecraft flight data.

Sivo, L. L.↗
NASA NTRS1992

Formal mechanization of device interactions with a process algebra

The principle emphasis is to develop a methodology to formally verify correct synchronization communication of devices in a composed hardware system. Previous system integration efforts have focused on vertical integration of one layer on top of another. This task examines 'horizontal' integration of peer devices. To formally reason about communication, we mechanize a process algebra in the Higher Order Logic (HOL) theorem proving system. Using this formalization we show how four types of device interactions can be represented and verified to behave as specified. The report also describes the specification of a system consisting of an AVM-1 microprocessor and a memory management unit which were verified in previous work. A proof of correct communication is presented, and the extensions to the system specification to add a direct memory device are discussed.

Schubert, E. Thomas↗
DOE OSTI2023

Integration of Ag-CBRAM crossbars and Mott ReLU neurons for efficient implementation of deep neural networks in hardware

In-memory computing with emerging non-volatile memory devices (eNVMs) has shown promising results in accelerating matrix-vector multiplications. However, activation function calculations are still being implemented with general processors or large and complex neuron peripheral circuits. Here, we present the integration of Ag-based conductive bridge random access memory (Ag-CBRAM) crossbar arrays with Mott rectified linear unit (ReLU) activation neurons for scalable, energy and area-efficient hardware (HW) implementation of deep neural networks. We develop Ag-CBRAM devices that can achieve a high ON/OFF ratio and multi-level programmability. Compact and energy-efficient Mott ReLU neuron devices implementing ReLU activation function are directly connected to the columns of Ag-CBRAM crossbars to compute the output from the weighted sum current. We implement convolution filters and activations for VGG-16 using our integrated HW and demonstrate the successful generation of feature maps for CIFAR-10 images in HW. Our approach paves a new way toward building a highly compact and energy-efficient eNVMs-based in-memory computing system.

Mott insulators↗
DOE OSTI2018

Single Domain 10 nm Ferromagnetism Imprinted on Superparamagnetic Nanoparticles Using Chiral Molecules

The rapid growth in demand for data and the emerging applications of Big Data require the increase of memory capacity. Magnetic memory devices are among the leading technologies for meeting this demand; however, they rely on the use of ferromagnets that creates size reduction limitations and poses complex materials requirements. Typically magnetic memory sizes are limited to 30–50 nm. Reducing the size even further, to the ≈10–20 nm scale, destabilizes the magnetization and its magnetic orientation becomes susceptible to thermal fluctuations and stray magnetic fields. In the present work, it is shown that 10 nm single domain ferromagnetism can be achieved. Using asymmetric adsorption of chiral molecules, superparamagnetic iron oxide nanoparticles become ferromagnetic with an average coercive field of ≈80 Oe. The asymmetric adsorption of molecules stabilizes the magnetization direction at room temperature and the orientation is found to depend on the handedness of the chiral molecules. These works point to a novel method for the miniaturization of ferromagnets (down to ≈10 nm) using established synthetic protocols.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Self-assembly for electronics

Self-assembly, a process in which molecules, polymers, and particles are driven by local interactions to organize into patterns and functional structures, is being exploited in advancing silicon electronics and in emerging, unconventional electronics. Additionally, silicon electronics has relied on lithographic patterning of polymer resists at progressively smaller lengths to scale down device dimensions. Yet, this has become increasingly difficult and costly. Assembly of block copolymers and colloidal nanoparticles allows resolution enhancement and the definition of essential shapes to pattern circuits and memory devices. As we look to a future in which electronics are integrated at large numbers and in new forms for the Internet of Things and wearable and implantable technologies, we also explore a broader material set. Semiconductor nanoparticles and biomolecules are prized for their size-, shape-, and composition-dependent properties and for their solution-based assembly and integration into devices that are enabling unconventional manufacturing and new device functions.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Data Movement Dominates: Advanced Memory Technology to Address the Real Exascale Power Problem

Energy is the fundamental barrier to Exascale supercomputing and is dominated by the cost of moving data from one point to another, not computation. Similarly, performance is dominated by data movement, not computation. The solution to this problem requires three critical technologies: 3D integration, optical chip-to-chip communication, and a new communication model. The central goal of the Sandia led "Data Movement Dominates" project aimed to develop memory systems and new architectures based on these technologies that have the potential to lower the cost of local memory accesses by orders of magnitude and provide substantially more bandwidth. Only through these transformational advances can future systems reach the goals of Exascale computing with a manageable power budgets. The Sandia led team included co-PIs from Columbia University, Lawrence Berkeley Lab, and the University of Maryland. The Columbia effort of Data Movement Dominates focused on developing a physically accurate simulation environment and experimental verification for optically-connected memory (OCM) systems that can enable continued performance scaling through high-bandwidth capacity, energy-efficient bit-rate transparency, and time-of-flight latency. With OCM, memory device parallelism and total capacity can scale to match future high-performance computing requirements without sacrificing data-movement efficiency. When we consider systems with integrated photonics, links to memory can be seamlessly integrated with the interconnection network-in a sense, memory becomes a primary aspect of the interconnection network. At the core of the Columbia effort, toward expanding our understanding of OCM enabled computing we have created an integrated modeling and simulation environment that uniquely integrates the physical behavior of the optical layer. The PhoenxSim suite of design and software tools developed under this effort has enabled the co-design of and performance evaluation photonics-enabled OCM architectures on Exascale computing systems.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2022

Competing Easy-Axis Anisotropies Impacting Magnetic Tunnel Junction-Based Molecular Spintronics Devices (MTJMSDs)

Molecular spintronics devices (MSDs) attempt to harness molecules’ quantum state, size, and configurable attributes for application in computer devices—a quest that began more than 70 years ago. In the vast number of theoretical studies and limited experimental attempts, MSDs have been found to be suitable for application in memory devices and futuristic quantum computers. MSDs have recently also exhibited intriguing spin photovoltaic-like phenomena, signaling their potential application in cost-effective and novel solar cell technologies. The molecular spintronics field’s major challenge is the lack of mass-fabrication methods producing robust magnetic molecule connections with magnetic electrodes of different anisotropies. Another main challenge is the limitations of conventional theoretical methods for understanding experimental results and designing new devices. Magnetic tunnel junction-based molecular spintronics devices (MTJMSDs) are designed by covalently connecting paramagnetic molecules across an insulating tunneling barrier. The insulating tunneling barrier serves as a mechanical spacer between two ferromagnetic (FM) electrodes of tailorable magnetic anisotropies to allow molecules to undergo many intriguing phenomena. Our experimental studies showed that the paramagnetic molecules could produce strong antiferromagnetic coupling between two FM electrodes, leading to a dramatic large-scale impact on the magnetic electrode itself. Recently, we showed that the Monte Carlo Simulation (MCS) was effective in providing plausible insights into the observation of unusual magnetic domains based on the role of single easy-axis magnetic anisotropy. Here, we experimentally show that the response of a paramagnetic molecule is dramatically different when connected to FM electrodes of different easy-axis anisotropies. Motivated by our experimental studies, here, we report on an MCS study investigating the impact of the simultaneous presence of two easy-axis anisotropies on MTJMSD equilibrium properties. In-plane easy-axis anisotropy produced multiple magnetic phases of opposite spins. The multiple magnetic phases vanished at higher thermal energy, but the MTJMSD still maintained a higher magnetic moment because of anisotropy. The out-of-plane easy-axis anisotropy caused a dominant magnetic phase in the FM electrode rather than multiple magnetic phases. The simultaneous application of equal-magnitude in-plane and out-of-plane easy-axis anisotropies on the same electrode negated the anisotropy effect. Our experimental and MCS study provides insights for designing and understanding new spintronics-based devices.

42 ENGINEERING↗
DOE OSTI2014

A Survey Of Architectural Approaches for Managing Embedded DRAM and Non-volatile On-chip Caches

Recent trends of CMOS scaling and increasing number of on-chip cores have led to a large increase in the size of on-chip caches. Since SRAM has low density and consumes large amount of leakage power, its use in designing on-chip caches has become more challenging. To address this issue, researchers are exploring the use of several emerging memory technologies, such as embedded DRAM, spin transfer torque RAM, resistive RAM, phase change RAM and domain wall memory. In this paper, we survey the architectural approaches proposed for designing memory systems and, specifically, caches with these emerging memory technologies. To highlight their similarities and differences, we present a classification of these technologies and architectural approaches based on their key characteristics. We also briefly summarize the challenges in using these technologies for architecting caches. We believe that this survey will help the readers gain insights into the emerging memory device technologies, and their potential use in designing future computing systems.

classification↗
DOE OSTI2021

Introduction of Chalcogenide Glasses to Additive Manufacturing: Nanoparticle Ink Formulation, Inkjet Printing, and Phase Change Devices Fabrication

Abstract Chalcogenide glasses are one of the most versatile materials that have been widely researched because of their flexible optical, chemical, electronic, and phase change properties. Their application is usually in the form of thin films, which work as active layers in sensors and memory devices. In this work, we investigate the formulation of nanoparticle ink of Ge–Se chalcogenide glasses and its potential applications. The process steps reported in this work describe nanoparticle ink formulation from chalcogenide glasses, its application via inkjet printing and dip-coating methods and sintering to manufacture phase change devices. We report data regarding nanoparticle production by ball milling and ultrasonication along with the essential characteristics of the formed inks, like contact angle and viscosity. The printed chalcogenide glass films were characterized by Raman spectroscopy, X-ray diffraction, energy dispersive spectroscopy and atomic force microscopy. The printed films exhibited similar compositional, structural, electronic and optical properties as the thermally evaporated thin films. The crystallization processes of the printed films are discussed compared to those obtained by vacuum thermal deposition. We demonstrate the formation of printed thin films using nanoparticle inks, low-temperature sintering and proof for the first time, their application in electronic and photonic temperature sensors utilizing their phase change property. This work adds chalcogenide glasses to the list of inkjet printable materials, thus offering an easy way to form arbitrary device structures for optical and electronic applications.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗