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Age-Orientation Relationships of Northern Hemisphere Martian Gullies and "Pasted-on" Mantling Unit: Implications for Near-Surface Water Migration in Mars' Recent History
The finding of abundant, apparently young, Martian gullies with morphologies indicative of formation by flowing fluid was surprising in that volumes of near-surface liquid water in sufficient quantities to modify the surface geology were not thought possible under current conditions. Original hypotheses on origin of gullies were mostly centered on groundwater seepage and surface runoff and melting of near-surface ground ice. More recently, melting of snow deposited in periods of higher obliquity has been proposed as a possible origin of the gullies. Tied to this hypothesis is the supposition that the "pasted-on" mantling unit observed in association with many gullies is composed of remnant snowpack. The mantling unit has distinct rounded edge on its upper boundary and exhibits features suggestive of flow noted that the uppermost part of the mantle marks where gullies begin, suggesting that the source of water for the gullies was within the mantle. The mantle is found preferentially on cold, pole-facing slopes and, where mantled and non-mantled slopes are found together, gullies are observed incised into the latter. In other cases, the mantling material lacks gullies.
Grounding line migration of West Antarctic glaciers, detected by ERS radar interferometry
ERS radar interferometry is a powerful new technique to map the grounding line of outlet glaciers, or more precisely to located the limit of tidal flexing of their floating sections, or hinge line.
Migration of Upper Troposheric Water Vapor From Subtropics to the US West Coast as Observed by Microwave Limb Sounder
Despite its small quantity the importance of upper tropospheric humidity (UTH) is its ability to trap the longwave radiation emitted from the Earth's surface, namely the greenhouse effect.
Forced ion migration for chalcogenide phase change memory device
Non-volatile memory devices with two stacked layers of chalcogenide materials comprising the active memory device have been investigated for their potential as phase change memories. The devices tested included GeTe/SnTe, Ge.sub.2Se.sub.3/SnTe, and Ge.sub.2Se.sub.3/SnSe stacks. All devices exhibited resistance switching behavior. The polarity of the applied voltage with respect to the SnTe or SnSe layer was critical to the memory switching properties, due to the electric field induced movement of either Sn or Te into the Ge-chalcogenide layer. One embodiment of the invention is a device comprising a stack of chalcogenide-containing layers which exhibit phase change switching only after a reverse polarity voltage potential is applied across the stack causing ion movement into an adjacent layer and thus "activating" the device to act as a phase change random access memory device or a reconfigurable electronics device when the applied voltage potential is returned to the normal polarity. Another embodiment of the invention is a device that is capable of exhibiting more that two data states.
Minimizing Production Downtime for a PDMLink 8.0 to 9.1 Migration
No abstract available
REVEAL: Software Documentation and Platform Migration
The Research Environment for Vehicle Embedded Analysis on Linux (REVEAL) is reconfigurable data acquisition software designed for network-distributed test and measurement applications. In development since 2001, it has been successfully demonstrated in support of a number of actual missions within NASA's Suborbital Science Program. Improvements to software configuration control were needed to properly support both an ongoing transition to operational status and continued evolution of REVEAL capabilities. For this reason the project described in this report targets REVEAL software source documentation and deployment of the software on a small set of hardware platforms different from what is currently used in the baseline system implementation. This presentation specifically describes the actions taken over a ten week period by two undergraduate student interns and serves as an overview of the content of the final report for that internship.
Forced ion migration for chalcogenide phase change memory device
Non-volatile memory devices with two stacked layers of chalcogenide materials comprising the active memory device have been investigated for their potential as phase-change memories. The devices tested included GeTe/SnTe, Ge.sub.2Se.sub.3/SnTe, and Ge.sub.2Se.sub.3/SnSe stacks. All devices exhibited resistance switching behavior. The polarity of the applied voltage with respect to the SnTe or SnSe layer was critical to the memory switching properties, due to the electric field induced movement of either Sn or Te into the Ge-chalcogenide layer. One embodiment of the invention is a device comprising a stack of chalcogenide-containing layers which exhibit phase-change switching only after a reverse polarity voltage potential is applied across the stack causing ion movement into an adjacent layer and thus "activating" the device to act as a phase-change random access memory device or a reconfigurable electronics device when the applied voltage potential is returned to the normal polarity. Another embodiment of the invention is a device that is capable of exhibiting more than two data states.
A No-Frills Approach to Migrating from Pro/INTRALINK 3.4 to Windchill 8.0
No abstract available
High-eccentricity migration of planetesimals around polluted white dwarfs
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Forced Ion Migration for Chalcogenide Phase Change Memory Device
Non-volatile memory devices with two stacked layers of chalcogenide materials comprising the active memory device have been investigated for their potential as phase-change memories. The devices tested included GeTe/SnTe, Ge2Se3/SnTe, and Ge2Se3/SnSe stacks. All devices exhibited resistance switching behavior. The polarity of the applied voltage with respect to the SnTe or SnSe layer was critical to the memory switching properties, due to the electric field induced movement of either Sn or Te into the Ge-chalcogenide layer. One embodiment of the invention is a device comprising a stack of chalcogenide-containing layers which exhibit phase-change switching only after a reverse polarity voltage potential is applied across the stack causing ion movement into an adjacent layer and thus "activating" the device to act as a phase-change random access memory device or a reconfigurable electronics device when the applied voltage potential is returned to the normal polarity. Another embodiment of the invention is a device that is capable of exhibiting more than two data states.
Modeling Contamination Migration on the Chandra X-Ray Observatory - III
No abstract available
Modeling Delamination Migration: Quasi-Static and Fatigue Loading
No abstract available
Modeling Contamination Migration on the Chandra X-Ray Observatory - IV
No abstract available