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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 325 records · Page 18
All sourcesNASA NTRSDOE OSTI
NASA NTRS2013

An All-Solid-State, Room-Temperature, Heterodyne Receiver for Atmospheric Spectroscopy at 1.2 THz

Heterodyne receivers at submillimeter wavelengths have played a major role in astrophysics as well as Earth and planetary remote sensing. All-solid-state heterodyne receivers using both MMIC (monolithic microwave integrated circuit) Schottky-diode-based LO (local oscillator) sources and mixers are uniquely suited for long-term planetary missions or Earth climate monitoring missions as they can operate for decades without the need for any active cryogenic cooling. However, the main concern in using Schottky-diode-based mixers at frequencies beyond 1 THz has been the lack of enough LO power to drive the devices because 1 to 3 mW are required to properly pump Schottky diode mixers. Recent progress in HEMT- (high-electron-mobility- transistor) based power amplifier technology, with output power levels in excess of 1 W recently demonstrated at W-band, as well as advances in MMIC Schottky diode circuit technology, have led to measured output powers up to 1.4 mW at 0.9 THz. Here the first room-temperature tunable, all-planar, Schottky-diode-based receiver is reported that is operating at 1.2 THz over a wide (≈20%) bandwidth. The receiver front-end (see figure) consists of a Schottky-diode-based 540 to 640 GHz multiplied LO chain (featuring a cascade of W-band power amplifiers providing around 120 to 180 mW at W-band), a 200-GHz MMIC frequency doubler, and a 600-GHz MMIC frequency tripler, plus a biasable 1.2-THz MMIC sub-harmonic Schottky-diode mixer. The LO chain has been designed, fabricated, and tested at JPL and provides around 1 to 1.5 mW at 540 o 640 GHz. The sub-harmonic mixer consists of two Schottky diodes on a thin GaAs membrane in an anti-parallel configuration. An integrated metal insulator metal (MIM) capacitor has been included on-chip to allow dc bias for the Schottky diodes. A bias voltage of around 0.5 V/diode is necessary to reduce the LO power required down to the 1 to 1.5 mW available from the LO chain. The epilayer thickness and doping profiles have been specifically optimized to maximize the mixer performance beyond 1 THz. The measured DSB noise temperatures and conversion losses of the receiver are 2,000 to 3,500 K and 12 to 14 dB, respectively, at 120 K, and 4,000 to 6,000 K and 13 to 15 dB, respectively, at 300 K. These results establish the state-of-the-art for all-solid-state, all-planar heterodyne receivers at 1.2 THz operating at either room temperature or using passive cooling only. Since no cryogenic cooling is needed, the receiver is eminently suited to atmospheric heterodyne spectroscopy of the outer planets and their moons.

Siles, Jose V.↗
NASA NTRS1996

Ka-Band Tiny Transmitter for the New Millenium Program

The size, mass and cost of telecommunications systems on deep space missions have increased at almost an exponential rate over the last thirty years. Great cost and size reduction of these systems can be achieved by reducing the cost and size of the transponder component of the radio subsystem. An advanced technology X-and Ka-band (8 and 32 GHz) Tiny Transmitter is being developed at JPL for the New Millenium program and is described in this paper.

Cassini↗
NASA NTRSDate not supplied

Benefits of Ka-band GaN MMIC High Power Amplifiers With Wide Bandwidth and High Spectral/Power Added Efficiencies for Cognitive Radio Platforms

A cognitive radio on a future NASA near-Earth spacecraft will be capable of sensing its environment and dynamically adapting its operating parameters to provide the desired SATCOM service to the mission. A key component that can enable this type of operation is a high-power amplifier (HPA) that resides on the radio platform. In this paper, we present the RF performance characteristics of a Ka-band gallium nitride (GaN) monolithic microwave integrated circuit (MMIC) based HPA for cognitive radio platforms. These characteristics include the output power, gain, power added efficiency (PAE), RMS error vector magnitude (EVM), spectral efficiency, 3rd-order intermodulation distortion (IMD) products, spectrum, spectral regrowth, noise figure (NF), and phase noise. The data presented indicates that the HPA meets NTIA, military, and commercial spectral mask requirements. In addition, we discuss the benefits offered by the above performance characteristics toward the design and implementation of a cognitive radio platform. Furthermore, as examples, we discuss three potential use cases that apply artificial intelligence (AI) and machine learning (ML) techniques and exploit the performance characteristics discussed above to provide a knowledge-based cognitive radio platform design for SATCOM. Thus, cognitive radios with performance flexibility can enable roaming and provide seamless interoperability autonomously in the future between NASA, commercial, and other space networks owned by U.S. government agencies.

Gallium nitride↗
NASA NTRS2023

Benefits of Ka-band GaN MMIC High Power Amplifiers With Wide Bandwidth and High Spectral/Power Added Efficiencies for Cognitive Radio Platforms

A cognitive radio on a future NASA near-Earth spacecraft will be capable of sensing its environment and dynamically adapting its operating parameters to provide the desired SATCOM service to the mission. A key component that can enable this type of operation is a high-power amplifier (HPA) that resides on the radio platform. In this report, we present the RF performance characteristics of a Ka-band gallium nitride (GaN) monolithic microwave integrated circuit (MMIC) based HPA for cognitive radio platforms. These characteristics include the output power, gain, power added efficiency (PAE), RMS error vector magnitude (EVM), spectral efficiency, 3rdorder intermodulation distortion (IMD) products, spectrum, spectral regrowth, noise figure (NF), phase noise, and group delay. The data presented indicates that the HPA meets NTIA, military, and commercial spectral mask requirements. In addition, we discuss the benefits offered by the above performance characteristics toward the design and implementation of a cognitive radio platform. Furthermore, as examples, we discuss three potential use cases that apply artificial intelligence (AI) and machine learning (ML) techniques and exploit the performance characteristics discussed above to provide a knowledge-based cognitive radio platform design for SATCOM. Thus, cognitive radios with performance flexibility can enable roaming and provide seamless interoperability autonomously in the future between NASA, commercial, and other space networks owned by U.S. government agencies.

Gallium nitride↗
NASA NTRSDate not supplied

A Spectrally Efficient Ka-Band GaN Power Amplifier with Scalable Power Combining Architecture for Lunar High Data Rate Direct-to-Earth Communications

The output power from a single gallium nitride (GaN) high electron mobility transistor (HEMT) based monolithic microwave integrated circuit (MMIC) power amplifier (PA) chip is limited to few watts. To achieve higher power, the output from several chips have to be combined. In this paper we present, the results of a study conducted to investigate a 2-way power combiner to combine the output power from two GaN MMIC based high power amplifier (HPA) chips The parameters investigated includes the power combiner characteristics, individual GaN MMIC based HPA output power, gain, and power added efficiency, and the overall performance of the combined amplifier.

Gallium Nitride↗
NASA NTRS2009

Submillimeter-Wave Amplifier Module with Integrated Waveguide Transitions

To increase the usefulness of monolithic millimeter-wave integrated circuit (MMIC) components at submillimeter-wave frequencies, a chip has been designed that incorporates two integrated, radial E-plane probes with an MMIC amplifier in between, thus creating a fully integrated waveguide module. The integrated amplifier chip has been fabricated in 35-nm gate length InP high-electron-mobility-transistor (HEMT) technology. The radial probes were mated to grounded coplanar waveguide input and output lines in the internal amplifier. The total length of the internal HEMT amplifier is 550 m, while the total integrated chip length is 1,085 m. The chip thickness is 50 m with the chip width being 320 m. The internal MMIC amplifier is biased through wire-bond connections to the gates and drains of the chip. The chip has 3 stages, employing 35-nm gate length transistors in each stage. Wire bonds from the DC drain and gate pads are connected to off-chip shunt 51-pF capacitors, and additional off-chip capacitors and resistors are added to the gate and drain bias lines for low-frequency stability of the amplifier. Additionally, bond wires to the grounded coplanar waveguide pads at the RF input and output of the internal amplifier are added to ensure good ground connections to the waveguide package. The S-parameters of the module, not corrected for input or output waveguide loss, are measured at the waveguide flange edges. The amplifier module has over 10 dB of gain from 290 to 330 GHz, with a peak gain of over 14 dB at 307 GHz. The WR2.2 waveguide cutoff is again observed at 268 GHz. The module is biased at a drain current of 27 mA, a drain voltage of 1.24 V, and a gate voltage of +0.21 V. Return loss of the module is very good between 5 to 25 dB. This result illustrates the usefulness of the integrated radial probe transition, and the wide (over 10-percent) bandwidth that one can expect for amplifier modules with integrated radial probes in the submillimeter-regime (>300 GHz).

Samoska, Lorene↗
NASA NTRS2005

Beyond G-band : a 235 GHz InP MMIC amplifier

We present results on an InP monolithic millimeter- wave integrated circuit (MMIC) amplifier having 10-dB gain at 235 GHz. We designed this circuit and fabricated the chip in Northrop Grumman Space Technology's (NGST) 0.07- m InP high electron mobility transistor (HEMT) process. Using a WR3 (220-325 GHz) waveguide vector network analyzer system interfaced to waveguide wafer probes, we measured this chip on-wafer for -parameters. To our knowledge, this is the first time a WR3 waveguide on-wafer measurement system has been used to measure gain in a MMIC amplifier above 230 GHz.

high electron mobility transistors (HEMTs)↗
NASA NTRS1982

A monolithic lead sulfide-silicon MOS integrated-circuit structure

A technique is developed for directly integrating infrared photoconductive PbS detector material with MOS transistors. A layer of chromium, instead of aluminum, is deposited followed by a gold deposition in order to ensure device survival during the chemical deposition of the PbS. Among other devices, a structure was fabricated and evaluated in which the PbS was directly coupled to the gate of a PMOS. The external bias, load, and source resistors were connected and the circuit was operated as a source-follower amplifier. Radiometric evaluations were performed on a variety of different MOSFETs of different geometry. In addition, various detector elements were simultaneously fabricated to demonstrate small element capability, and it was shown that elements of 25 x 25 microns could easily be fabricated. Results of room temperature evaluations using a filtered 700 K black body source yielded a detectivity at peak wavelength of 10 to the 11th cm (root Hz)/W at 100 Hz chopping frequency.

Jhabvala, M. D.↗
NASA NTRS2009

SOI CMOS Imager with Suppression of Cross-Talk

A monolithic silicon-on-insulator (SOI) complementary metal oxide/semiconductor (CMOS) image-detecting integrated circuit of the active-pixel-sensor type, now undergoing development, is designed to operate at visible and near-infrared wavelengths and to offer a combination of high quantum efficiency and low diffusion and capacitive cross-talk among pixels. The imager is designed to be especially suitable for astronomical and astrophysical applications. The imager design could also readily be adapted to general scientific, biological, medical, and spectroscopic applications. One of the conditions needed to ensure both high quantum efficiency and low diffusion cross-talk is a relatively high reverse bias potential (between about 20 and about 50 V) on the photodiode in each pixel. Heretofore, a major obstacle to realization of this condition in a monolithic integrated circuit has been posed by the fact that the required high reverse bias on the photodiode is incompatible with metal oxide/semiconductor field-effect transistors (MOSFETs) in the CMOS pixel readout circuitry. In the imager now being developed, the SOI structure is utilized to overcome this obstacle: The handle wafer is retained and the photodiode is formed in the handle wafer. The MOSFETs are formed on the SOI layer, which is separated from the handle wafer by a buried oxide layer. The electrical isolation provided by the buried oxide layer makes it possible to bias the MOSFETs at CMOS-compatible potentials (between 0 and 3 V), while biasing the photodiode at the required higher potential, and enables independent optimization of the sensory and readout portions of the imager.

Pain, Bedabrata↗
NASA NTRS1977

Further development of an indium antimonide (InSb)Charge-Coupled Infrared Imaging Device (CCIRID), 20-element linear imager

Problems encountered in the development of an indium antimonide charge coupled device for infrared imaging and real time signal processing on the focal plane are summarized. A new generation chip is described which contains, 2, 4, and 20-element imagers, a 4-element TDI array, a monolithic gated charge integrator, and test devices. A system study of a future LANDSAT sensor system configured around an InSb TDi array is considered.

Source record↗
NASA NTRS1980

Development of simplified process for environmentally resistant cells

This report describes a program to develop a simple, foolproof, all vacuum solar cell manufacturing process which can be completely automated and which results in medium efficiency cells which are inherently environmentally resistant. All components of the completed cells are integrated into a monolithic structure with no material interfaces. The exposed materials (SI, Al2O3, Al, Ni) are all resistant to atmospheric attack and the junction, per se, is passivated to prevent long term degradation. Such cells are intended to be incorporated into a simple module consisting basically of a press formed metallic superstructure with a separated glass cover for missile, etc., protection.

King, W. J.↗
NASA NTRS1985

Imaging front-end systems for millimeter waves and submillimeter waves

Imaging (multi-beam) front-end systems utilize a reflector or a lens, as well as a focal-plane array of receptor elements (beams). To be practical, such systems must utilize focal plane arrays which can be fabricated using hybrid integrated (and eventually monolithic) technology. This paper reviews alternative approaches to focussing elements, auxiliary devices required for local oscillator injection and similar functions, and focal plane arrays. It also discusses general limitations and advantages of these approaches, as well as typical applications to millimeter and submillimeter astronomical instrumentation.

Yngvesson, K. S.↗
NASA NTRS1992

A flexible CPW package for a 30 GHz MMIC amplifier

A novel package, which consists of a carrier housing, has been developed for monolithic-millimeter wave Integrated Circuit amplifiers which operate at 30 giga-Hz. The carrier has coplanar waveguide (CPW) interconnects and provides heat-sinking, tuning, and cascading capabilities. The housing provides electrical isolation, mechanical protection and a feed-thru for biasing.

Simons, Rainee N.↗
NASA NTRS1992

A flexible CPW package for a 30 GHz MMIC amplifier

A package, which consists of a carrier and housing, was developed for monolithic-millimeter wave integrated circuit amplifiers which operate at 30 GHz. The carrier has coplanar waveguide (CPW) interconnects and provides heat-sinking, tuning, and cascading capabilities. The housing provides electrical isolation, mechanical protection, and a feed-through for biasing.

Simons, Rainee N.↗
NASA NTRS2003

Amplifier arrays for CMB polarization

Cryogenic low noise amplifier technology has been successfully used in the study of the cosmic microwave background (CMB). MMIC (Monolithic Millimeter wave Integrated Circuit) technology makes the mass production of coherent detection receivers feasible.

CMB↗
NASA NTRS2008

HEMT Amplifiers and Equipment for their On-Wafer Testing

Power amplifiers comprising InP-based high-electron-mobility transistors (HEMTs) in coplanar-waveguide (CPW) circuits designed for operation at frequencies of hundreds of gigahertz, and a test set for onwafer measurement of their power levels have been developed. These amplifiers utilize an advanced 35-nm HEMT monolithic microwave integrated-circuit (MMIC) technology and have potential utility as local-oscillator drivers and power sources in future submillimeter-wavelength heterodyne receivers and imaging systems. The test set can reduce development time by enabling rapid output power characterization, not only of these and similar amplifiers, but also of other coplanar-waveguide power circuits, without the necessity of packaging the circuits.

Fung, King man↗