Passivation and thickness control of highly efficient kesterite solar cells
Kesterite Cu 2 ZnSn(S x Se 1-x ) 4 (CZTSSe) is an attractive photovoltaic absorber material because of its tunable bandgap, earth abundance, and low toxicity. However, efficiency and open circuit voltage remain significantly below theoretical limits. We recently showed that back-contact engineering with MoO 3 /Au on exfoliated vapor-deposited kesterite solar cells can improve device performance. In this work, we demonstrate more promising results, which translate into high power conversion efficiencies of up to 12.2% for solution-deposited CZTSe with thicknesses as low as 1.1 μm. Time-resolved terahertz spectroscopy of exfoliated films showed significantly faster recombination at the back surface than at the front. When atomic layer deposited Al 2 O 3 was used to passivate the exposed back surface of exfoliated films, front and back surfaces showed nearly identical recombination dynamics. After thermally depositing high work function MoO 3 and reflective Au as the back contact on the Al 2 O 3 -passivated absorber, we obtained devices with efficiencies of up to 11.6%. Applying the same strategy of exfoliating working devices and engineering the back contact resulted in efficiencies of up to 12.2% for passivation with a 10 nm layer of Se instead of Al 2 O 3 . Lastly, further development of such passivation and back-contact engineering approaches may lead to higher efficiency devices with absorber thicknesses below 1 μm.