SEARCH · Search NASA
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.
An infrared photoresponsive element (RD) is monolithically integrated into a source follower circuit of a metal oxide semiconductor device by depositing a layer of a lead chalcogenide as a photoresistive element forming an ohmic bridge between two metallization strips serving as electrodes of the circuit. Voltage from the circuit varies in response to illumination of the layer by infrared radiation.
Computer-controlled thermal-wave microscope developed to investigate III-V compound semiconductor devices and materials. Is nondestructive technique providing information on subsurface thermal features of solid samples. Furthermore, because this is subsurface technique, three-dimensional imaging also possible. Microscope uses intensity-modulated electron beam of modified scanning electron microscope to generate thermal waves in sample. Acoustic waves generated by thermal waves received by transducer and processed in computer to form images displayed on video display of microscope or recorded on magnetic disk.
A 600-V, 50-A transistor and 1,200-V, 50-A diode in rugged, compact, lightweight packages intended for use in inverter-type power supplies having switching frequencies up to 20 kHz. Packages provide low-inductance connections, low loss, electrical isolation, and long-life hermetic seal. Low inductance achieved by making all electrical connections to each package on same plane. Also reduces high-frequency losses by reducing coupling into inherent shorted turns in packaging material around conductor axes. Stranded internal power conductors aid conduction at high frequencies, where skin effect predominates. Design of packages solves historical problem of separation of electrical interface from thermal interface of high-power semiconductor device.
Experimental phase-conjugate four-wave-mixing apparatus used to demonstrate capabilities of GaAs (and potentially of other photorefractive semiconductors like InP and CdTe) for optical processing of information. With modifications, performs any of three basic image-processing functions: transfer to different light beam, enhancement of edges, and autocorrelation. Includes crystal of GaAs of 5 by 9 by 9 mm with cubic crystalline axes. Advantages include high speed and compatibilty with other semiconductor devices.
Equations derived to estimate obscuration ratios of surfaces contaminated by particles. Ratio is fraction of surface area covered by particles. Useful as index of cleanliness in clean-room operations in manufacturing of semiconductor devices, magnetic recording media, optical devices, and pharmaceutical and biotechnological products.
The development of SiC as a high temperature semiconductor material is discussed, focusing on the epitaxial growth of single crystal SiC films on inexpensive single crystal silicon wafers. Progress in the improvement of film morphology and the elimination of antiphase disorder is examined. Potential candidate materials for high temperature semiconductor devices are compared and SiC films are evaluated.
Optoelectronic terminal for digital communication both transmits and receives over single optical fiber. Uses same semiconductor device - light-emitting diode (LED) - as both transmitting and receiving transducer. Dual-purpose LED's reduce cost.
Proposed multiple-quantum-well intersubband semiconductor device detects photons over broader range of wavelengths. Device is stack of substacks, each of which contains quantum-well layers sensitive to different narrow band of wavelengths. Bandwidth and detectivity increased.
Circuit designed for measurement of dc current-versus-voltage characteristics of semiconductor devices. Operates in conjunction with x-y pen plotter or digital storage oscilloscope, which records data. Includes large feedback resistors to prevent high currents damaging device under test. Principal virtues: low cost, simplicity, and compactness. Also used to evaluate diodes and transistors.
This invention is a method for the controlled growth of single-crystal semiconductor device quality films of SiC polytypes on vicinal (0001) SiC wafers with low tilt angles. Both homoepitaxial and heteroepitaxial SiC films can be produced on the same wafer. In particular, 3C-SiC and 6H-SiC films can be produced within selected areas of the same 6H-SiC wafer.
Progress being made on space application technology research on film fabrication, passive microwave circuits, and semiconductor devices for cryogenic circuits is reviewed. Achievements in YBCO and TCBCO films are addressed along with circuit evaluations of microstrip resonators, phase shifters, microstrip filters, dielectric resonator filters, and superconducting antennas.
Report discusses collection of electrical charge from track of energetic heavy ion through reverse-biased n+/p junction in semiconductor device. Study focuses on effect of funneling upon total charge collected by low-impedance external circuit. Presents detailed qualitative description of collapse of depletion region and subsequent recovery.
Vacuum gas/tungsten-arc vapor-deposition process yields highly reflective, smooth films reproducing contours of surfaces on which deposited. Rate of deposition controlled precisely, and surface texture varied. Capable of deposition at rates double those of standard sputtering. Useful in making thin metallic coats to serve as electrical conductors, radio reflectors or antenna elements, or optical mirrors of partial or ultrahigh reflectivity, and in making semiconductor devices.
Re-measurement of the properties of a set of electro-optic components exposed to the low earth orbital environment aboard the Long Duration Exposure Facility (LDEF) indicates that most components survived quite well. Typical components showed some effects related to the space environment unless well protected. The effects were often small but significant. Results for semiconductor infrared detectors, lasers, LED's, filter, mirrors, and black paints will be presented. Semiconductor detectors and emitters were scarred but reproduced their original characteristics. Spectral characteristics of multi-layer dielectric filters and mirrors were found to be altered and degraded. Increased absorption in black paints indicates an increase in absorption sites, giving rise to enhanced performance as coatings for baffles and sunscreens. We find plastics and multi-layer dielectric coatings to be potentially unstable. Semiconductor devices, metal, and glass are more likely to be stable.
In semiconductor devices the speed of electrons cannot exceed certain limits. This phenomenon will affect varactor multipliers as well as other high frequency devices where the RF current through the active part of the device is primarily displacement current. Hence, 'saturation' of the varactor output power is expected at some point. This phenomenon is discussed in some detail and shown to severely deteriorate the multiplier performance at higher frequencies. Single barrier varactors should have an advantage over GaAs Schottky diode varactors because they can be fabricated on InAs and stacked in a series array, allowing for lower current densities and higher power handling.
Report reviews experimental research on plasma-deposited films of hydrogenated amorphous carbon. Such films exhibit electrical resistivity, semi-transparency, mechanical hardness, and chemical inertness. Useful as gate dielectrics and passivating layers in semiconductor devices, insulators for metal/insulator/metal devices, and masks in nanometer lithography. Show promise as wear-resistant, hard solid lubricating coats for bearings and optical components.
A Get Away Special (GAS) experiment payload to investigate microgravity effects on solidification phenomena of selected experimental samples has been designed for flight. It is intended that the first flight of the assembly will (1) study the p-n junction characteristics for advancing semiconductor device applications, (2) study the effects of gravity-driven convection on the growth of HgCd crystals, (3) compare the textures of the sample which crystallizes in microgravity with those found in chondrite meteorites, and (4) modify glass optical characteristics through divalent oxygen exchange. The space flight experiment consists of many small furnaces. While the experiment payload is in the low gravity environment of orbital flight, the payload controller will sequentially activate the furnaces to heat samples to their melt state and then allow cooling to resolidification in a controlled fashion. The materials processed in the microgravity environment of space will be compared to the same materials processed on earth in a one-gravity environment. This paper discusses the design of all subassemblies (furnance, electronics, and power systems) in the experiment. A complete description of the experimental materials is also presented.
A method for the controlled growth of single-crystal semiconductor-device-quality films of SiC polytypes on vicinal (0001) SiC wafers with low tilt angles is presented. Both homoepitaxial and heteroepitaxial SiC films can be produced on the same wafer. In particular, 3C-SiC and 6H-SiC films can be produced within selected areas of the same 6H-SiC wafer.