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At least 325 records · Page 18

The SiH vibrational stretch as an indicator of the chemical state of interstellar grains

The infrared spectra of amorphous silicate grains and films formed in a variety of laboratory experiments have been measured. It is found that the frequency of the SiH fundamental stretch is extremely sensitive to the chemical environment of the grain in which the silicon is bound and varies from 2270/cm in oxidized grains to 2110/cm in a reducing environment. It is proposed that features previously observed in W33A could be due to -SiH groups in amorphous silica, partially reduced silica, silicon nitride or slightly oxidized silicon carbide. It is predicted that observations at 2270/cm will reveal a feature due to -SiH groups in highly oxidized interstelar and circumstellar grains. Such a feature might also appear in the spectra of comets.

Moore, Marla H.↗

Fundamentals of Passive Oxidation In SiC and Si3N4

The very slow oxidation kinetics of silicon carbide and silicon nitride, which derive from their adherent and passivating oxide films, has been explored at length in a broad series of studies utilizing thermogravimetric analysis, electron and optical micrography, energy dispersive spectrometry, x-ray diffractometry, micro-analytical depth profiling, etc. Some interesting microstructural phenomena accompanying the process of oxidation in the two materials will be presented. In Si3N4 the oxide is stratified, with an SiO2 topscale (which is relatively impervious to O2)underlain by a coherent subscale of silicon oxynitride which is even less permeable to O2- Such "defence in depth" endows Si3N4 with what is perhaps the highest oxidation resistance of any material, and results in a unique set of oxidation processes. In SiC the oxidation reactions are much simpler, yet new issues still emerge; for instance, studies involving controlled devitrification of the amorphous silica scale confirmed that the oxidation rate of SiC drops by more than an order of magnitude when the oxide scale fully crystallizes.

Thomas-Ogbuji, Linus U.↗

Silicone azide fireproof material

Finely powdered titanium oxide was added to silicone azide as the sintering agent to produce a nonflammable material. Mixing proportions, physical properties, and chemical composition of the fireproofing material are included.

Source record↗

Reactive Processing of Environmentally Conscious, Biomorphic Ceramics from Natural Wood Precursors

Environmentally conscious, biomorphic ceramics (Ecoceramics) are a new class of materials that are manufactured from renewable resources and wastes. In this study, silicon carbide and oxide-based biomorphic ceramics have been fabricated from pine and jelutong wood precursors. A carbonaceous preform is produced through wood pyrolysis and subsequent infiltration with oxides (ZrO2 sols) and liquid silicon to form ceramics. These biomorphic ceramics show a wide variety of microstructures, densities, and hardness behavior that are determined by the type of wood and infiltrants selected.

Singh, M.↗

Fabrication of OSOS cells by neutral ion beam sputtering

Oxide semiconductor on silicon (OSOS) solar cells have been fabricated from various indium tin oxide (In2O3)x(SnO2)1-x compositions sputtered onto p-type single crystal silicon substrates with a neutralized argon ion beam. High temperature processing or annealing was not required. The highest efficiency was achieved with x = 0.91 and was 12 percent. The cells are environmentally rugged, chemically stable, and show promise for still higher efficiencies. Moreover, the ion beam sputtering fabrication technique is amenable to low cost, continuous processing.

Burk, D. E.↗

Mechanism of incipient oxidation of bulk chemical vapor deposited Si3N4

X-ray photoelectron spectroscopy was employed, in conjunction with ion bombardment, to analyze the chemical composition profile across thin (less than 50 nm) oxide films on chemically vapor deposited Si3N4. The thermal oxides were grown in dry oxygen at 1100 C on samples with or without native oxide film (formed in room air). The results show that the thermal oxidation product was silicon oxynitride of graded N:O ratio, and that the presence of a native oxide film promotes the formation of a SiO2 crust over the oxynitride. It is proposed that the fundamental mechanism of Si3N4 oxidation is progressive O-for-N substitution in the silicon oxynitride unit tetrahedron, which is best designated SiN(2-x)O(2+x), where x is also an index of depth. The corresponding equation for nonstoichiometric oxidation of Si3N4 describes a bulk (rather than an interface) reaction process, with significant implications for O2 and N2 fluxes and diffusivities.

Ogbuji, L. U. T.↗

Chemically Layered Porous Solids

Aerogels and other porous solids in which surfaces of pores have chemical properties varying with depth below macroscopic surfaces prepared by sequences of chemical treatments. Porous glass or silica bead treated to make two depth zones having different chemical properties. Beads dropped along tube filled with flowing gas containing atomic oxygen, generated in microwave discharge. General class of materials treatable include oxides of aluminum, silicon, zirconium, tin, titanium, and nickel, and mixtures of these oxides. Potential uses of treated materials include chromatographic separations, membrane separations, controlled releases of chemicals, and catalysis.

Koontz, Steve↗

Thermal degradation study of silicon carbide threads developed for advanced flexible thermal protection systems

Silicon carbide (SiC) fiber is a material that may be used in advanced thermal protection systems (TPS) for future aerospace vehicles. SiC fiber's mechanical properties depend greatly on the presence or absence of sizing and its microstructure. In this research, silicon dioxide is found to be present on the surface of the fiber. Electron Spectroscopy for Chemical Analysis (ESCA) and Scanning Electron Microscopy (SEM) show that a thin oxide layer (SiO2) exists on the as-received fibers, and the oxide thickness increases when the fibers are exposed to high temperature. ESCA also reveals no evidence of Si-C bonding on the fiber surface on both as-received and heat treated fibers. The silicon oxide layer is thought to signal the decomposition of SiC bonds and may be partially responsible for the degradation in the breaking strength observed at temperatures above 400 C. The variation in electrical resistivity of the fibers with increasing temperature indicates a transition to a higher band gap material at 350 to 600 C. This is consistent with a decomposition of SiC involving silicon oxide formation.

Tran, Huy Kim↗

Ground-Laboratory to In-Space Effective Atomic-Oxygen Fluence Determined for DC 93-500 Silicone

Surfaces on the leading edge of spacecraft in low Earth orbit (e.g., surface facing the velocity direction), such as on the International Space Station, are subject to atomic oxygen attack, and certain materials are susceptible to erosion. Therefore, ground-based laboratory testing of the atomic oxygen durability of spacecraft materials is necessary for durability assessment when flight data are not available. For accurate space simulation, the facility is commonly calibrated on the basis of the mass loss of Kapton (DuPont, Wilmington, DE) as a control sample for effective fluence determination. This is because Kapton has a well-characterized atomic oxygen erosion yield (E(sub y), in cubic centimeters per atom) in the low Earth orbit (LEO) environment. Silicones, a family of commonly used spacecraft materials, do not chemically erode away with atomic oxygen attack like other organic materials that have volatile oxidation products. Instead, silicones react with atomic oxygen and form an oxidized hardened silicate surface layer. Often the loss of methyl groups causes shrinkage of the surface skin and "mud-tile" crazing degradation. But silicones often do not lose mass, and some silicones actually gain mass during atomic oxygen exposure. Therefore, the effective atomic oxygen fluence for silicones in a ground-test facility should not be determined on the basis of traditional mass-loss measurements, as it is with polymers that erode. Another method for determining effective fluence needs to be employed for silicones. A new technique has been developed at the NASA Glenn Research Center for determining the effective atomic oxygen fluence for silicones in ground-test facilities. This technique determines the equivalent amount of atomic oxygen oxidation on the basis of changes in the surface-oxide hardness. The specific approach developed was to compare changes in the surface hardness of ground-laboratory-exposed DC93-500 silicone with DC93-500 exposed to LEO atomic oxygen as part of a shuttle flight experiment. The on-the-ground to in-space effective atomic oxygen fluence was determined on the basis of the Kapton effective fluence in the ground-laboratory facility that produced the same hardness for the fluence in space.

deGroh, Kim K.↗

Surface Area, and Oxidation Effects on Nitridation Kinetics of Silicon Powder Compacts

Commercially available silicon powders were wet-attrition-milled from 2 to 48 hr to achieve surface areas (SA's) ranging from 1.3 to 70 sq m/g. The surface area effects on the nitridation kinetics of silicon powder compacts were determined at 1250 or 1350 C for 4 hr. In addition, the influence of nitridation environment, and preoxidation on nitridation kinetics of a silicon powder of high surface area (approximately equals 63 sq m/g) was investigated. As the surface area increased, so did the percentage nitridation after 4 hr in N2 at 1250 or 1350 C. Silicon powders of high surface area (greater than 40 sq m/g) can be nitrided to greater than 70% at 1250 C in 4 hr. The nitridation kinetics of the high-surface-area powder compacts were significantly delayed by preoxidation treatment. Conversely, the nitridation environment had no significant influence on the nitridation kinetics of the same powder. Impurities present in the starting powder, and those accumulated during attrition milling, appeared to react with the silica layer on the surface of silicon particles to form a molten silicate layer, which provided a path for rapid diffusion of nitrogen and enhanced the nitridation kinetics of high surface area silicon powder.

Bhatt, R. T.↗

Ceramic fibers from Si-B-C polymer precursors

Non-oxide ceramics such as silicon carbide (SiC), silicon nitride (Si3N4), and silicon borides (SiB4, SiB6) have thermal stability, oxidation resistance, hardness, and varied electrical properties. All these materials can be prepared in a fiber form from a suitable polymer precursor. The above mentioned fibers, when tested over a temperature range from 25 to 1400 C, experience degradation at elevated temperatures. Past work in ceramic materials has shown that the strength of ceramics containing both carbides and borides is sustained at elevated temperatures, with minimum oxidation. The work presented here describes the formation of ceramic fibers containing both elements, boron and silicon, prepared via the polymer precursor route previously reported by the authors, and discusses the fiber mechanical properties that are retained over the temperature range studied.

Riccitiello, S. R.↗

Effects of oxide additions and temperature on sinterability of milled silicon nitride

Specimens of milled alpha-Si3N4 with 0 to 5.07 equivalent percent of oxide additions were pressureless sintered at 1650 to 1820 C for 4 hours in nitrogen while covered with powdered Si3N4 + SiO2. Densities of less than or equal to 97.5 percent resulted with approximately 2.5 equivalent percent of MgO, CeO2, Y2O3, and three mixtures involving these oxides. Densities of greater than or equal to 94 percent were obtained with approximately 0.62 equivalent percent of the same additives. At most temperatures, best sinterability (density maxima) was obtained with 1.2 to 2.5 equivalent percent additive.

Arias, A.↗

Ceramic with preferential oxygen reactive layer

An article comprises a silicon-containing substrate and an external environmental/thermal barrier coating. The external environmental/thermal barrier coating is permeable to diffusion of an environmental oxidant and the silicon-containing substrate is oxidizable by reaction with oxidant to form at least one gaseous product. The article comprises an intermediate layer/coating between the silicon-containing substrate and the environmental/thermal barrier coating that is oxidizable to a nongaseous product by reaction with the oxidant in preference to reaction of the silicon-containing substrate with the oxidant. A method of forming an article, comprises forming a silicon-based substrate that is oxidizable by reaction with oxidant to at least one gaseous product and applying an intermediate layer/coating onto the substrate, wherein the intermediate layer/coating is oxidizable to a nongaseous product by reaction with the oxidant in preference to reaction of the silicon-containing substrate with the oxidant.

Wang, Hongyu↗

Advanced detectors and signal processing for bubble memories

The feasibility of combining silicon and magnetic bubble technologies is demonstrated. Results of bubble film annealing indicate that a low temperature silicon on garnet technology is the most likely one to succeed commercially. Annealing ambients are also shown to have a major effect on the magnetic properties of bubble films. Functional MOSFETs were fabricated on bubble films coated with thick (approximately 1 micron) SiO2 layers. The two main problems with these silicon on garnet MOSFETs are low electron mobilities and large gate leakage currents. Results indicate that the laser recrystallized silicon and gate oxide (SiO2) layers are contaminated. The data suggest that part of the contaminating ions originate in the sputtered oxide spacer layer and part originates in the bubble film itself. A diffusion barrier, such as silicon nitride, placed between the bubble film and the silicon layer should eliminate the contamination induced problem.

Kryder, M. H.↗

Investigation of Field Emitter Array Vacuum Microtriodes for Space Electronics Applications

Research into processing techniques for fabrication of vacuum microelectronic devices has been carried out, with special emphasis being given to the growth of silicon dioxide thin films. Oxide films ranging from 30 nm to approximately 2 micrometers have been grown on single crystal silicon wafers. Metal-oxide-semiconductor capacitor test structures have been made from some of these oxide films, and current-versus-voltage plots for these structures have been measured. It has been observed that the rate of applied voltage across the oxide films produces marked differences in measured leakage current. Breakdown fields across two of the thinnest oxide films have been measured and are comparable with highest values reported in literature. Several silicon wafers were processed to make field- emitter array diodes, and were delivered to collaborators at NASA-Lewis Research Center for final fabrication steps and testing.

Smith, Mark A.↗

Patterns of discoloration and oxidation by direct and scattered fluxes, especially oxygen on silicon

A number of interesting discoloration patterns are clearly evident on M0002-1 which resides on three faces of LDEF: front face, rear face, and earth face. Most interesting is the pattern of blue oxidation on polished single crystal silicon apparently produced by once-scattered ram oxygen atoms along the earth face. Most of the other patterns are seen in the Thermal Control Paint. Also, severe oxidation of CR-39 polycarbonate occurred on the front face of LDEF, as expected. A complete explanation for the patterns has not yet been obtained.

Frederickson, A. R.↗