Search NASA⌕ Search

SEARCH · Search NASA

Results for “SOLID STATE DEVICE”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 325 records · Page 18
All sourcesNASA NTRSDOE OSTI
DOE OSTI2019

A Modular SiC High-Frequency Solid-State Transformer for Medium-Voltage Applications: Design, Implementation, and Testing

The advancements in wide-bandgap devices are enabling applications of power electronic converters coupled directly with medium-voltage (MV) grids that incorporate galvanic isolation within the converter using high-frequency solid-state transformers (SSTs). This paper presents analysis, design, and the characterization results of a 50-kVA modular soft-switched ac-ac SST using silicon carbide (SiC) MOSFET for MV (>6 kV ac) applications. Here, the SST is comprised of two hard-switched ac-line interface bridges and a resonant dc-dc stage switched at approximately 180 kHz. To minimize the cost of switching elements per ampere and maximize the design flexibility, the design uses multiple discrete SiC devices of, readily available, 1700-V ratings. This paper covers the analysis of soft-switching operation, control architecture, converter design, and system-level integration.

17 WIND ENERGY↗
DOE OSTI2019

Voltage gated inter-cation selective ion channels from graphene nanopores

With the ability to selectively control ionic flux, biological protein ion channels perform a fundamental role in many physiological processes. For practical applications that require the functionality of a biological ion channel, graphene provides a promising solid-state alternative, due to its atomic thinness and mechanical strength. Here, we demonstrate that nanopores introduced into graphene membranes, as large as 50 nm in diameter, exhibit inter-cation selectivity with a ~20× preference for K + over divalent cations and can be modulated by an applied gate voltage. Liquid atomic force microscopy of the graphene devices reveals surface nanobubbles near the pore to be responsible for the observed selective behavior. Molecular dynamics simulations indicate that translocation of ions across the pore likely occurs via a thin water layer at the edge of the pore and the nanobubble. Our results reflect a significant improvement in the inter-cation selectivity displayed by a solid-state nanopore device and by utilizing the pores in a de-wetted state, offers a method to fabricate selective graphene membranes that does not rely on the fabrication of sub-nm pores.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2016

Advances and Promises of Layered Halide Hybrid Perovskite Semiconductors

Layered halide hybrid organic–inorganic perovskites (HOP) have been the subject of intense investigation before the rise of three-dimensional (3D) HOP and their impressive performance in solar cells. Recently, layered HOP have also been proposed as attractive alternatives for photostable solar cells and revisited for light-emitting devices. Here, we combine classical solid-state physics concepts with simulation tools based on density functional theory to overview the main features of the optoelectronic properties of layered HOP. A detailed comparison between layered and 3D HOP is performed to highlight differences and similarities. In the same way as the cubic phase was established for 3D HOP, here we introduce the tetragonal phase with D 4h symmetry as the reference phase for 2D monolayered HOP. It allows for detailed analysis of the spin–orbit coupling effects and structural transitions with corresponding electronic band folding. We further investigate the effects of octahedral tilting on the band gap, loss of inversion symmetry and possible Rashba effect, quantum confinement, and dielectric confinement related to the organic barrier, up to excitonic properties. Altogether, this paper aims to provide an interpretive and predictive framework for 3D and 2D layered HOP optoelectronic properties.

14 SOLAR ENERGY↗
DOE OSTI2011

Identification Of Natural Dyes On Archaeological Textile Objects Using Laser Induced Fluorescent Technique

This study aims to evaluate the use of Laser Fluorescent as a non-destructive technique for identification of natural dyes on archaeological textile objects. In this study wool textile samples were dyed with 10 natural dyes such as cochineal, cutch, henna, indigo, Lac, madder, safflower, saffron, sumac and turmeric. These dyes common present on archaeological textile objects to be used as standard dyed textile samples. These selected natural dyes will be used as known references that can be used a guide to identify unknown archaeological dyes. The dyed textile samples were investigated with laser radiation in different wavelengths to detect the best wavelengths for identification each dye. This study confirms that Laser Florescent is very useful and a rapid technique can be used as a non-destructive technique for identification of natural dyes on archaeological textile objects. The results obtained with this study can be a guide for all conservators in identification of natural organic dyes on archaeological textile objects.

36 MATERIALS SCIENCE↗
DOE OSTI2011

Experimental Investigation of the Reflection Mode Micro Laser Propulsion under Highly Frequent and Multi Pulse Laser

Micro laser propulsion used for some space tasks of micro-satellites are preferred to providing small thrust and high specific impulse while keeping power consumption low. Most previous work on micro laser propulsion are about transmission mode (T-mode) using a CW laser. In this article, a pulsed fiber laser is used to study the micro laser propulsion performance under reflection mode. Multi pulse (ranged from 100 to 2000) tests are conducted on a double base propellant with the vacuum less than 10 Pa. The laser frequency is 20 kHz and two kinds of instantaneous power density 4.77x10{sup 6} W/cm{sup 2} and 2.39x10{sup 7} W/cm{sup 2} are used. It is found that the momentum coupling coefficient C{sub m} and the mean thrust F increases with the increasing pulse numbers, which is different to the previous work. By adjusting the irradiation time T, it is easy to get a large mean thrust, up to mN. When the energy density is the same, C{sub m}, I{sub sp}, F and {eta} increase with the increasing power density. Also I{sub sp} and {eta} are very low, laser ablation is insufficiently under the current condition. 3D Morphology of the ablation hole is obtained by confocal microscope for the first time.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Photon-Number-Dependent Hamiltonian Engineering for Cavities

Cavity resonators are promising resources for quantum technology, while native nonlinear interactions for cavities are typically too weak to provide the level of quantum control required to deliver complex targeted operations. Here we investigate a scheme to engineer a target Hamiltonian for photonic cavities using ancilla qubits. By off resonantly driving dispersively coupled ancilla qubits, we develop an optimized approach to engineering an arbitrary photon-number-dependent Hamiltonian for the cavities while minimizing the operation errors. Here, the engineered Hamiltonian admits various applications including canceling unwanted cavity self-Kerr interactions, creating higher-order nonlinearities for quantum simulations, and designing quantum gates resilient to noise. Our scheme can be implemented with coupled microwave cavities and transmon qubits in superconducting circuit systems.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2013

Analysis of a free-running synchronization artifact correction for MV-imaging with aSi:H flat panels

Purpose: Solid state flat panel electronic portal imaging devices (EPIDs) are widely used for megavolt (MV) photon imaging applications in radiotherapy. In addition to their original purpose in patient position verification, they are convenient to use in quality assurance and dosimetry to verify beam geometry and dose deposition or to perform linear accelerator (linac) calibration procedures. However, native image frames from amorphous silicon (aSi:H) detectors show a range of artifacts which have to be eliminated by proper correction algorithms. When a panel is operated in free-running frame acquisition mode, moving vertical stripes (periodic synchronization artifacts) are a disturbing feature in image frames. Especially for applications in volumetric intensity modulated arc therapy (VMAT) or motion tracking, the synchronization (sync) artifacts are the limiting factor for potential and accuracy since they become even worse at higher frame rates and at lower dose rates, i.e., linac pulse repetition frequencies (PRFs). Methods: The authors introduced a synchronization correction method which is based on a theoretical model describing the interferences of the panel's readout clocking with the linac's dose pulsing. Depending on the applied PRF, a certain number of dose pulses is captured per frame which is readout columnwise, sequentially. The interference of the PRF with the panel readout is responsible for the period and the different gray value levels of the sync stripes, which can be calculated analytically. Sync artifacts can then be eliminated multiplicatively in precorrected frames without additional information about radiation pulse timing. Results: For the analysis, three aSi:H EPIDs of various types were investigated with 6 and 15 MV photon beams at varying PRFs of 25, 50, 100, 200, and 400 pulses per second. Applying the sync correction at panels with gadolinium oxysulfide scintillators improved single frame flood field image quality drastically [improvement of the signal-to-noise ratio (SNR) up to 66.1 dB for 6 MV and 66.0 dB for 15 MV]. Also for the EPID with a caesium iodide scintillator, the noise for the lower PRFs could be reduced (SNR at 6 MV of up to 56.3 dB and at 15 MV up to 46.7 dB). However, the simplistic readout interference model fails at higher PRFs, where image lag and ghosting effects due to trapped charges in the thin film transistor and scintillator postglowing require additional corrections. Conclusions: The presented free-running sync correction method improves SNR of single frames and enables imaging applications, like low-dose rate imaging at increased image frame rates (e.g., to track moving gold fiducials in the lung). Adaptive image guided radiotherapy protocols become even feasible in VMAT plans. Also simultaneous kilovolt and MV imaging applications can benefit from new possibilities of MV scatter removal in x-ray images.

60 APPLIED LIFE SCIENCES↗
DOE OSTI2023

Digital quantum simulation of NMR experiments

Simulations of nuclear magnetic resonance (NMR) experiments can be an important tool for extracting information about molecular structure and optimizing experimental protocols but are often intractable on classical computers for large molecules such as proteins and for protocols such as zero-field NMR. We demonstrate the first quantum simulation of an NMR spectrum, computing the zero-field spectrum of the methyl group of acetonitrile using four qubits of a trapped-ion quantum computer. We reduce the sampling cost of the quantum simulation by an order of magnitude using compressed sensing techniques. We show how the intrinsic decoherence of NMR systems may enable the zero-field simulation of classically hard molecules on relatively near-term quantum hardware and discuss how the experimentally demonstrated quantum algorithm can be used to efficiently simulate scientifically and technologically relevant solid-state NMR experiments on more mature devices. Our work opens a practical application for quantum computation.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2018

Wide Bandgap Semiconductor Opportunities in Power Electronics

The report objective is to explore the Wide Bandgap (WBG) Power Electronics (PE) market, applications, and potential energy savings in order to identify key areas where further resources and investments of the U.S. Department of Energy’s Office of Energy Efficiency and Renewable Energy (DOE EERE) would have the most impact on U.S. competiveness. After considering the current market, several potential near-term application areas were identified as having significant market and energy savings potential with respect to clean energy applications: (1) data centers (uninterruptible power supplies and server power supplies); (2) renewable energy generation (photovoltaic-solar and wind); (3) motor drives (industrial, commercial and residential); (4) rail traction; and, (5) hybrid and electric vehicles (traction and charging). After the initial explorative analyses, it became clear that, SiC, not GaN, would be the principal WBG power device material for the chosen markets in the near future. Therefore, while GaN is discussed when appropriate, this report focuses on SiC devices, other WBG applications (e.g., solid-state transformers, combined heat and power, medical, and wireless power), the GaN market, and GaN specific applications (e.g., LiDAR, 5G) will be explored at a later date. In addition to the market, supply and value chain analyses addressed in Section 1 of this report, a SWOT (Strength, Weakness, Opportunity, Threat) analysis and potential energy savings analysis was conducted for each application area to identify the major potential WBG application area(s) with a U.S. competitiveness opportunity in the future.

29 ENERGY PLANNING, POLICY, AND ECONOMY↗
DOE OSTI2018

A Modular and Flexible High-Frequency-Link Transformer with a Reduced Device Count and Zero High-Side Devices

In general, large power transformers (LPTs) are not interchangeable with each other and their high costs prohibit extensive spare inventories more so considering that on an average only 1.3 LPTs are manufactured for individual design. The latter pose a further challenge since given that the several existing LPTs are reaching their end of service lives, loss of plurality of such LPTs, that form the backbone of U.S. power grid, will clearly run into the problem of energy security related to the non-availability of sufficient spares (and extended lead time) exacerbated further by the fact that these spares are not interchangeable for installations at different locations. Conventional LPT cost millions of dollars and weighs significantly between approximately 100 and 400 tons. Two raw materials—copper and electrical steel—account for over 50 percent of the total cost of an LPT. In recent years, the price volatility of these two commodities in the global market has affected the manufacturing conditions and procurement strategy for LPTs. Transportation is also an important element of the total LPT cost, because an LPT can weigh significantly and often requires long-distance transport. Transporting an LPT is challenging—its large dimensions and heavy weight pose unique requirements to ensure safe and efficient transportation. Current road, rail, and port conditions are such that transportation is taking more time and becoming more expensive. Conventional low-frequency LPTs typically follow a monolithic approach to design due to historical reasons that need to transition to more modular and flexible (e.g., in voltage, impedance, and power flow) designs with ability to seamlessly/near-seamlessly scale. They should also have the ability to incorporate new technologies without in all cases redoing a LPT design from scratch. Given that the cost of raw materials has continued to increase, next-generation LPTs need to pursue avenues for reducing these costs. An added necessity is to reduce the transportability cost, which is significant in conventional LPTs. Further, given that LPTs are for the long term, they need to be durable, efficient, and fault tolerant with overloading capability. Given this backdrop, the objective and accomplishment of this one-year DOE (SPONSOR) R&D project, led by small business NextWatt LLC (PRIME, Lead PI: Dr. Sudip K. Mazumder) and University of Arkansas at Fayetteville (SUBAWARDEE, PI: Dr. Juan Balda) were to explore the design of a (8 – 20 kHz) high-frequency-link (HFL) based 100-MVA LPT with nominal voltage of 115/69 kV, with $15 - $22 dollars US per kVA when manufactured in “moderate” volume, with 99% energy-conversion efficiency, with 300% reduction in both volume and weight compared to a conventional LPT with the same electrical ratings, with impedance variation greater than 5%, with direct AC/AC power conversion capability, with very-high energy-conversion efficiency (using wide-bandgap SiC based field effect MOSFET devices) over a wide operating temperature, with reduction in both volume and weight with regard to conventional low frequency LPT, and with significant reduction in number of devices compared to state of the art solid state transformer topology.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2022

Laser 3D printing of highly compacted protonic ceramic electrolyzer stack

Solid oxide electrolysis cells (SOECs) for H 2 production is a core technology for H2@scale. However, its conventional manufacturing methods adapted from the manufacture of solid oxide fuel cells (SOFC) need high cost, especially for small-volume production. The emerging laser 3D printing (L3DP) technology with computer-aided 3D printing and computer-controlled laser processing can fulfill layer-by-layer digital shaping and rapid in-situ consolidating feedstock into complicated geometries. L3DP, a promising additive manufacturing (AM) technology, has achieved significant success in manufacturing plastic and metal parts, which is currently attracting considerable attention for the cost-effective, rapid, and flexible manufacturing of heterogeneous multilayered ceramic devices (e.g., SOECs, SOFCs, and solid-state batteries). It is believed that the L3DP can integrate the advantages of selective consolidation of heterogeneous layers, accurate control of layer microstructures, high processing heat efficiency, high processing speed, high stack compactness, high stack design flexibility, and low stack sealing area for cost-effective, rapid, and flexible manufacturing of SOECs to meet DOE’s electrolyzer target.

08 HYDROGEN↗
DOE OSTI2022

Adoption Pathways for DC Power Distribution in Buildings

Driven by the proliferation of DC energy sources and DC end-use devices (e.g., photovoltaics, battery storage, solid-state lighting, and consumer electronics), DC power distribution in buildings has recently emerged as a path to improved efficiency, resilience, and cost savings in the transitioning building sector. Despite these important benefits, there are several technological and market barriers impeding the development of DC distribution, which have kept this technology at the demonstration phase. This paper identifies specific end-use cases for which DC distribution in buildings is viable today. We evaluate their technology and market readiness, as well as their efficiency, cost, and resiliency benefits while addressing implementation barriers. The paper starts with a technology review, followed by a comprehensive market assessment, in which we analyze DC distribution field deployments and their end-use characteristics. We also conduct a survey of DC power and building professionals through on-site visits and phone interviews and summarize lessons learned and recommendations. In addition, the paper includes a novel efficiency analysis, in which we quantify energy savings from DC distribution for different end-use categories. Based on our findings, we present specific adoption pathways for DC in buildings that can be implemented today, and for each pathway we identify challenges and offer recommendations for the research and building community.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2017

Rechargeable solid state neutron detector and visible radiation indicator

A radiation detection device, including: a support structure; and a chalcopyrite crystal coupled to the support structure; wherein, when the chalcopyrite crystal is exposed to radiation, a visible spectrum of the chalcopyrite crystal changes from an initial color to a modified color. The visible spectrum of the chalcopyrite crystal is changed back from the modified color to the initial color by annealing the chalcopyrite crystal at an elevated temperature below a melting point of the chalcopyrite crystal over time. The chalcopyrite crystal is optionally a .sup.6LiInSe.sub.2 crystal. The radiation is comprised of neutrons that decrease the .sup.6Li concentration of the chalcopyrite crystal via a .sup.6Li(n,.alpha.) reaction. The initial color is yellow and the modified color is one of orange and red. The annealing temperature is between about 450 degrees C. and about 650 degrees C. and the annealing time is between about 12 hrs and about 36 hrs.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2021

Optimizing the self-assembly of conjugated polymers and small molecules through structurally programmed non-covalent control

Organic conjugated polymers and oligomers are key electronic materials for applications such as transistors, photovoltaics, and light emitting devices due to their potential for solution processability, mechanical flexibility, and precise structure-based tuning compared to inorganic materials. In dilute environments, the optoelectronic properties of conjugated polymers are largely governed by their constitutional structure and, to a lesser degree, their solution-state intramolecular configuration. In the solid state, intramolecular conformation and intermolecular electronic coupling impact these properties substantially, especially in relation to device performance. Therefore, an increasingly important area of research concerning conjugated materials is developing design strategies aimed at optimizing the solid-state packing for electronic applications. Programming solid-state packing arrangements through discrete non-covalent interactions is an emerging strategy within the context of conjugated polymers. This review focuses on the use of the two most prevalent discrete and directional interactions used to dictate the self-assembly of conjugated polymers and oligomers—hydrogen bonds and chalcogen bonds. Further, we also discuss how these design motifs can imbue conjugated materials with appealing physical properties while simultaneously retaining or improving electronic capabilities.

36 MATERIALS SCIENCE↗
DOE OSTI2015

An empirical study of redundant array of independent solid-state drives (RAIS)

Solid-state drives (SSD) are popular storage media devices alongside magnetic hard disk drives (HDD). SSD flash chips are packaged in HDD form factors and SSDs are compatible with regular HDD device drivers and I/O buses. This compatibility allows easy replacement of individual HDDs with SSDs in existing storage systems. However, under certain circumstances, SSD write performance can be significantly slowed by garbage collection (GC) processes. The frequency of GC activity is directly correlated with the frequency of inside-SSD write operations and the amount of data written to it. GC scheduling is locally controlled by an internal SSD logic. Here, this paper studies the feasibility of Redundant Arrays of Independent Flash-based Solid-state drives (RAIS). We empirically analyze the RAIS performance using commercially-off-the-shelf (COTS) SSDs. We investigate the performance of various RAIS configurations under a variety of I/O access patterns. Finally, we present our performance and cost comparisons of RAIS with a fast, PCIe-based COTS SSD, in terms of performance and cost.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2020

Low Threshold Voltages Electrochemically Drive Gold Migration in Halide Perovskite Devices

The constituent ions of halide perovskite materials are mobile in the solid state and known to participate in reduction/oxidation reactions. Yet few parameters related to electrochemical processes occurring within devices have been carefully determined. Here, we characterize such reactions in model MAPbI3 perovskite devices, and we quantify threshold voltages for key reactions. Gold is oxidized and mobilized under nitrogen, in the dark, at the MAPbI3/Au interface at 0.8 V. When this interface is buffered with the organic hole transport material (HTM), 2,2',7,7'-tetrakis(N,N-di-p-methoxyphenylamino)-9,9'-spirobifluorene, MAPbI3 begins to degrade at 1.2 V; degradation liberates ions that subsequently enable Au migration. Thresholds are insensitive to MAPbI3 thickness or choice of organic HTM or oxide cathode, which suggests that these reactions are driven electrochemically; the electric field across the device is less important. These results have profound implications for understanding in operando degradation pathways of optoelectronic perovskite devices that are varied in terms of interface structures, active material compositions, and ranges of external stressors.

42 ENGINEERING↗
DOE OSTI2020

Hexagonal boron nitride: Epitaxial growth and device applications

As a newest family member of the III-nitrides, BN is considered amongst the remaining frontiers in wide energy bandgap semiconductors with potentials for technologically significant applications in deep UV (DUV) optoelectronics, solid-state neutron detectors, electron emitters, single photon emitters, switching/memory devices, and super-capacitors. It was shown that it is possible to produce h-BN epilayers with high hexagonal phase purity, UV transparency, and film stoichiometry by employing nitrogen-rich growth conditions. The quasi-2D nature of h-BN supports unusually strong optical transitions near the band edge and a large exciton binding energy on the order of 0.7 eV. Since the isotope of B-10 has a large capture cross-section for thermal neutrons, h-BN is an ideal material for the fabrication of solid-state neutron detectors for special nuclear materials detection, well and geothermal logging, and medical imaging applications. Freestanding B-10 enriched h-BN (h- 10 BN) epilayers with varying thicknesses up to 200 μm have been successfully synthesized by metal organic chemical vapor deposition (MOCVD) as of this writing. By utilizing the conductivity anisotropy nature of h-BN, 1 cm 2 lateral detectors fabricated from 100 μm thick h-10BN epilayers have demonstrated a detection efficiency of 59% for thermal neutrons, which is the highest on record among all solid-state neutron detectors as of today. It was noted that high growth temperatures, long growth times and the use of sapphire substrate tend to incorporate oxygen related impurities into h- 10 BN epilayers, which strongly impacted the carrier mobility-lifetime (μτ) products and charge collection efficiencies of h- 10 BN neutron detectors. As the h-BN material technology further develops, improved carrier mobilities and μτ products will allow the fabrication of h-BN devices with enhanced performance.

42 ENGINEERING↗
DOE OSTI2025

Electrolytic gold plating, stripping, and ion transport dynamics through a solid-state iodide perovskite

The pronounced electrochemical reactivity between halide perovskites and metal electrodes can introduce mobile extrinsic metal ions which can cause device instability or enable novel functionalities. Here we systematically investigate the kinetics of gold cation (Au + ) migration in indium tin oxide (ITO)/methylammonium lead triiodide (MAPbI 3 )/Au model devices under long-term potentiostatic biasing. Scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), and density functional theory (DFT) analyses reveal that Au + ions, electrochemically generated at the Au anode, traverse the perovskite layer with diffusion coefficients on the order of 10 −11 to 10 −10 cm 2 s −1 and are subsequently reduced at the cathode as Au 0 clusters, resembling metal plating behavior in electrolytic cells and solid-state batteries during charging. Furthermore, reversing the applied bias strips the plated Au 0 , revealing reversibility suitable for bipolar resistive switching devices and providing direct evidence of the electrochemical and ionic nature of Au transport within the perovskite matrix. Quantitatively determining diffusion coefficients and ion concentrations provides foundational inputs for future drift-diffusion modelling opportunities and allows us to relate our findings to implications on long term operation of devices like photovoltaic modules. These results clearly demonstrate the solid-state electrochemical nature of perovskite devices, highlight methods to be more quantitative about ion transport properties, provide and emphasize the importance of disentangling electro-, photo-, photoelectrochemical processes for understanding device performance and unlocking new functionalities.

14 SOLAR ENERGY↗