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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 325 records · Page 18
All sourcesNASA NTRSDOE OSTI
NASA NTRS2005

Ionizing Radiation Environment on the International Space Station: Performance vs. Expectations for Avionics and Material

The role of structural shielding mass in the design, verification, and in-flight performance of International Space Station (ISS), in both the natural and induced orbital ionizing radiation (IR) environments, is reported. Detailed consideration of the effects of both the natural and induced ionizing radiation environment during ISS design, development, and flight operations has produced a safe, efficient manned space platform that is largely immune to deleterious effects of the LEO ionizing radiation environment. The assumption of a small shielding mass for purposes of design and verification has been shown to be a valid worst-case approximation approach to design for reliability, though predicted dependences of single event effect (SEE) effects on latitude, longitude, SEP events, and spacecraft structural shielding mass are not observed. The Figure of Merit (FOM) method over predicts the rate for median shielding masses of about 10g/cm(exp 2) by only a factor of 3, while the Scott Effective Flux Approach (SEFA) method overestimated by about one order of magnitude as expected. The Integral Rectangular Parallelepiped (IRPP), SEFA, and FOM methods for estimating on-orbit (Single Event Upsets) SEU rates all utilize some version of the CREME-96 treatment of energetic particle interaction with structural shielding, which has been shown to underestimate the production of secondary particles in heavily shielded manned spacecraft. The need for more work directed to development of a practical understanding of secondary particle production in massive structural shielding for SEE design and verification is indicated. In contrast, total dose estimates using CAD based shielding mass distributions functions and the Shieldose Code provided a reasonable accurate estimate of accumulated dose in Grays internal to the ISS pressurized elements, albeit as a result of using worst-on-worst case assumptions (500 km altitude x 2) that compensate for ignoring both GCR and secondary particle production in massive structural shielding.

Koontz, Steven L.↗
DOE OSTI2020

Measurements of Single Event Upset in ATLAS IBL

Effects of Single Event Upsets (SEU) and Single Event Transients (SET) are studied in the FE-I4B chip of the innermost layer of the ATLAS pixel system. SEU/SET affect the FE-I4B Global Registers as well as the settings for the individual pixels, causing, among other things, occupancy losses, drops in the low voltage currents, noisy pixels, and silent pixels. Quantitative data analysis and simulations indicate that SET dominate over SEU on the load line of the memory. Operational issues and mitigation techniques are presented.

47 OTHER INSTRUMENTATION↗
NASA NTRS1999

Proton Effects and Test Issues for Satellite Designers: Displacement Effects - Section 4

Microelectronic and photonic systems in the natural space environment are bombarded by a variety of charged particles including electrons, trapped protons, cosmic rays, and solar particles (protons and other heavy ions). These incident particles cause both ionizing and non-ionizing effects when traversing a device, and the effects can be either transient or permanent. The vast majority of the kinetic energy of an incident proton is lost to ionization, creating the single event effects (SEES) and total ionizing dose (TID) effects described in section IVA. However, the small portion of energy lost in non-ionizing processes causes atoms to be removed from their lattice sites and form permanent electrically active defects in semiconductor materials. These defects, i.e., "displacement damage," can significantly degrade device performance. In general, most of the displacement damage effects in the natural space environment can be attributed to protons since they are plentiful and extremely energetic (and therefore not readily shielded against). For this reason, we consider only proton induced displacement damage in this course. (Nevertheless, we identify solar cells as an important example of a case where both electron and proton damage can be important since only very light shielding is feasible.) The interested reader is encouraged to explore the three previous NSREC and RADECS short courses [Srou88a, Summ92, Hopk97] which also treat displacement damage issues for satellite applications. Part A of this segment of the short course introduces the space environment, proton shielding issues, and requirements specifications for proton-rich environments. In order to exercise the displacement damage analysis tools for on-orbit performance predictions, the requirements document must provide the relevant proton spectra in addition to the usual total ionizing dose-depth curves.

Marshall, Cheryl J.↗
NASA NTRS1999

Proton Effects and Test Issues for Satellite Designers

Microelectronic and photonic systems in the natural space environment are bombarded by a variety of charged particles including electrons, trapped protons, cosmic rays, and solar particles (protons and other heavy ions). These incident particles cause both ionizing and non-ionizing effects when traversing a device, and the effects can be either transient or permanent. The vast majority of the kinetic energy of an incident proton is lost to ionization, creating the single event effects (SEES) and total ionizing dose (TID) effects. However, the small portion of energy lost in non-ionizing processes causes atoms to be removed from their lattice sites and form permanent electrically active defects in semiconductor materials. These defects, i.e., "displacement damage," can significantly degrade device performance. In general, most of the displacement damage effects in the natural space environment can be attributed to protons since they are plentiful and extremely energetic (and therefore not readily shielded against). For this reason, we consider only proton induced displacement damage in this course. (Nevertheless, we identify solar cells as an important example of a case where both electron and proton damage can be important since only very light shielding is feasible.) The interested reader is encouraged to explore the three previous NSREC and RADECS short courses which also treat displacement damage issues for satellite applications. Part A of this segment of the short course introduces the space environment, proton shielding issues, and requirements specifications for proton-rich environments. In order to exercise the displacement damage analysis tools for on-orbit performance predictions, the requirements document must provide the relevant proton spectra in addition to the usual total ionizing dose-depth curves. Ion-solid interactions and the nature of the displacement damage they generate have been studied extensively for over half a century, yet they still remain a subject of investigation. In this section, a description of the mechanisms by which displacement damage is produced will be followed by a summary of the major consequences for device performance in a space environment. Often the degradation of a device parameter can be characterized by a damage factor (measured in a laboratory using monoenergetic protons) that is simply the change in a particular electrical or optical parameter per unit proton fluence. In addition, we will describe the concept of a non-ionizing energy loss rate (NIEL) which quantifies that portion of the energy lost by an incident ion that goes into displacements. It has been calculated as a function of proton energy, and is analogous to (and has the same units as) the linear energy transfer (LET) for ionizing energy. We will discover that, to first order, the calculated NIEL describes the energy dependence of the measured device damage factors. This observation provides the basis for predicting proton induced device degradation in a space environment based on both the calculated NIEL and relatively few laboratory test measurements. The methodology of such on-orbit device performance predictions will be described, as well as the limitations. Several classes of devices for which displacement damage is a significant (if not the dominant) mode of radiation induced degradation will be presented.

Marshall, Cheryl J.↗
NASA NTRS2004

Mitigation of High Altitude and Low Earth Orbit Radiation Effects on Microelectronics via Shielding or Error Detection and Correction Systems

The NASA Cooperative Agreement NAG4-210 was granted under the FY2000 Faculty Awards for Research (FAR) Program. The project was proposed to examine the effects of charged particles and neutrons on selected random access memory (RAM) technologies. The concept of the project was to add to the current knowledge of Single Event Effects (SEE) concerning RAM and explore the impact of selected forms of radiation on Error Detection and Correction Systems. The project was established as an extension of a previous FAR awarded to Prairie View A&M University (PVAMU), under the direction of Dr. Richard Wilkins as principal investigator. The NASA sponsored Center for Applied Radiation Research (CARR) at PVAMU developed an electronic test-bed to explore and quantify SEE on RAM from charged particles and neutrons. The test-bed was developed using 486DX microprocessor technology (PC-104) and a custom test board to mount RAM integrated circuits or other electronic devices. The test-bed had two configurations - a bench test version for laboratory experiments and a 400 Hz powered rack version for flight experiments. The objectives of this project were to: 1) Upgrade the Electronic Test-bed (ETB) to a Pentium configuration; 2) Accommodate more than only 8 Mbytes of RAM; 3) Explore Error Detection and Correction Systems for radiation effects; 4) Test modern RAM technologies in radiation environments.

Gupta, Kajal↗
NASA NTRSDate not supplied

NAIRAS Model Updates and Improvements to the Prediction of the Ionizing Radiation Environment from the Earth's Surface to Geospace

- NAIRAS Model Description - Nowcast of Aerospace Ionizing RAdiation System (NAIRAS) Model - Running in real-time on LaRC computer cluster since 2011, results hosted on Space Environment Technologies server/website - Running in real-time at CCMC since 2020 - Key Model Features - Global ionizing radiation environment model - Physics-based HZETRN (High Charge (Z) and Energy TRaNsport) code - Real-time inclusion of solar energetic particle (SEP) radiation - Real-time solar-magnetospheric effects on radiation (cutoff model by Kress et al. [2004, 2010]) - New/Current Model Development - Improved SEP dose nowcast and forecast - Extend to low-Earth orbit (LEO) environment - Single-Event Effects (SEE) radiation risk assessment quantities - Run-on-Request (RoR) @ CCMC

Christopher J. Mertens↗
NASA NTRS2014

Investigation of the Semicoa 2N7616 and 2N7425 and the Microsemi 2N7480 for Single-Event Gate Rupture and Single-Event Burnout

Single-event-effect test results for hi-rel total-dose-hardened power MOSFETs are presented in this report. The 2N7616 and the 2N7425 from Semicoa and the 2N7480 from International Rectifier were tested to NASA test condition standards and requirements. The 2N7480 performed well and the data agree with the manufacture's data. The 2N7616 and 2N7425 were entry parts from Semicoa using a new device architecture. Unfortunately, the device performed poorly and Semicoa is withdrawing power MOSFETs from it line due to these data. Vertical metal-oxide-semiconductor field-effect transistors (MOSFETs) are the most commonly used power transistor. MOSFETs are typically employed in power supplies and high current switching applications. Due to the inherent high electric fields in the device, power MOSFETs are sensitive to heavy ion irradiation and can fail catastrophically as a result of single-event gate rupture (SEGR) or single-event burnout (SEB). Manufacturers have designed radiation-hardened power MOSFETs for space applications. See [1] through [5] for more information. The objective of this effort was to investigate the SEGR and SEB responses of two power MOSFETs recently produced. These tests will serve as a limited verification of these parts. It is acknowledged that further testing on the respective parts may be needed for some mission profiles.

Scheick, Leif↗
NASA NTRS1999

1999 NSREC Short Course: Proton Effects and Test Issues for Satellite Designers: Displacement Effects

This portion of the Short Course is divided into two segments to separately address the two major proton-related effects confronting satellite designers: ionization effects and displacement damage effects. While both of these topics are deeply rooted in "traditional" descriptions of space radiation effects, there are several factors at play to cause renewed concern for satellite systems being designed today. For example, emphasis on Commercial Off-The-Shelf (COTS) technologies in both commercial and government systems increases both Total Ionizing Dose (TID) and Single Event Effect (SEE) concerns. Scaling trends exacerbate the problems, especially with regard to SEEs where protons can dominate soft error rates and even cause destructive failure. In addition, proton-induced displacement damage at fluences encountered in natural space environments can cause degradation in modern bipolar circuitry as well as in many emerging electronic and opto-electronic technologies.

Marshall, Cheryl J.↗
NASA NTRS2011

Investigation of the Semicoa SCF9550 and the International Rectifier IRHM57260SE for Single-Event Gate Rapture and Single-Event Burnout : NASA Electronic Parts and Packaging (NEPP) Program Office of Safety and Mission Assurance

Single-event-effect test results for hi-rel total-dose-hardened power MOSFETs are presented in this report. TheSCF9550 from Semicoa and the IRHM57260SE from International Rectifier were tested to NASA test condition/standards and requirements.The IRHM57260SE performed much better when compared to previous testing. These initial results confirm that parts from the Temecula line are marginally comparable to the El Segundo line. The SCF9550 from Semicoa was also tested and represents the initial parts offering from this vendor. Both parts experienced single-event gate rupture (SEGR) and single-event burnout (SEB). All of the SEGR was from gate to drain.

Single Event Gate Rupture↗
NASA NTRS1991

The NASA Microelectronics Space Radiation Effects Program (MSREP) at the Jet Propulsion Laboratory

The primary objective of the Microelectronics Space Radiation Effects Program (MSREP) at the Jet Propulsion Laboratory (JPL) is to assist NASA in the selection of radiation hardened microelectronic parts for insertion in NASA space systems through radiation testing and research. Prior to presenting examples of the research and testing on Single Event Effects (SEE) and Total Ionizing Dose (TID) effects, the space radiation environment and radiation requirements for the CRAFT/Cassini program, a typical JPL space project, are discussed.

Barnes, C.↗
NASA NTRS1994

Radiation-Protected Protocols For Self-Testing Of Microcircuits

Ionizing radiation need not trigger unintended self-testing. Protocols installed in certain microcircuits permitting functional self-testing do not consider possibility of inadvertent triggering by protons or energetic heavy ions in space or satellite orbit. Recommended devices be rendered immune to so-called single event effects of energetic ions in cosmic rays, flares, or trapped-charge belts surrounding Earth and some other planets. Proposed pair of stimuli be applied to device in specified manner to start self-test. Protocol can require two or more stimuli at single node, or pair of stimuli at two nodes, or some more complicated combination.

Nichols, Donald K.↗
NASA NTRS2019

Mechanisms of Heavy Ion-Induced Single Event Burnout in 4H-SiC Power MOSFETs

This describes the mechanisms behind the failure of 4H-SiC Power MOSFETs when struck by a heavy ion. The modeled device is designed to simulate a commercially available 1200 V power MOSFET and the ion simulated is a silver ion with a Linear Energy Transfer of 46 MeV-cm2/mg commonly used in single event effect (SEE) testing. The device is shown in simulation to fail near 500 V, which is in close agreement to experiments. These simulations go to show that the failure of SiC MOSFET occurs near the interface between the epi and substrate layers due to the rapid increase of the electric field in that region and destruction of the device from impact ionization. From this, two designs were proposed and investigated that would help to mitigate the electric field in these regions and improve the device's tolerance to single-event burnout (SEB). The new designs increased the voltage at which SEB occurs from 500 V to over 900 V and increased the Ron,sp by only 5%.

Mcpherson, Joseph A.↗
NASA NTRS2004

Virtex-II Pro SEE Test Methods and Results

The objective of this coarse Single Event Effect (SEE) test is to determine the suitability of the commercial Virtex-II Pro family for use in spaceflight applications. To this end, this test is primarily intended to determine any Singe Event Latchup (SEL) susceptibilities for these devices. Secondly, this test is intended to measure the level of Single Event Upset (SEU) susceptibilities and in a general sense where they occur. The coarse SEE test was performed on a commercial XC2VP7 device, a relatively small single processor version of the Virtex-II Pro. As the XC2VP7 shares the same functional block design and fabrication process with the larger Virtex-II Pro devices, the results of this test should also be applicable to the larger devices. The XC2VP7 device was tested on a commercial Virtex-II Pro development board. The testing was performed at the Cyclotron laboratories at Texas A&M and Michigan State Universities using ions of varying energy levels and fluences.

Petrick, David↗
NASA NTRS2009

Virtex-4VQ dynamic and mitigated single event upset characterization summary

This report is the result of funding by the NASA Electronic Parts and Packaging Program (NEPP) and the combined efforts of members within the Xilinx Radiation Test Consortium (XRTC), sometimes known as the Xilinx Single Event Effects (SEE) Test Consortium. The XRTC is a voluntary association of aerospace entities, including leading aerospace companies, universitie and national laboratories, combining resources to characterize reconfigurable, field programmable gate arrays (FPGAs) for aerospace applications. Previous publications of Virtex-4 radiation results are for commercial (non-epitaxial) devices; see, for example, Refs. 1–5. A notable exception is Ref. 6, which presents XRTC upset measurements of storage elements in the PowerPC405s in the XQR4VFX60. This work represents a continuation of the efforts reported in the “Virtex-4QV Static SEU Characterization Summary” [7]. The contents of this report describe various Single Event Functional Interrupt (SEFI) and Single Event Upset (SEU) modes seen while dynamically exercising the clocked resources within Virtex-4 devices and the corresponding mitigation techniques related to the aforementioned observed SEFI modes.

Allen, Gregory↗
NASA NTRS2019

Space Radiation and Plasma Effects on Satellites and Aviation: Quantities and Metrics for Tracking Performance of Space Weather Environment Models

The Community Coordinated Modeling Center has been leading communitywide space science and space weather model validation projects for many years. These efforts have been broadened and extended via the newly launched International Forum for Space Weather Modeling Capabilities Assessment (https://ccmc.gsfc.nasa.gov/assessment/). Its objective is to track space weather models' progress and performance over time, a capability that is critically needed in space weather operations and different user communities in general. The Space Radiation and Plasma Effects Working Team of the afore mentioned International Forum works on one of the many focused evaluation topics and deals with five different subtopics (https://ccmc.gsfc.nasa.gov/assessment/topics/radiationall.php) and varieties of particle populations: Surface Charging from tens of eV to 50keV electrons and internal charging due to energetic electrons from hundreds keV to several MeVs. Single event effects from solar energetic particles and galactic cosmic rays (several MeV to TeV), total dose due to accumulation of doses from electrons (>100 keV) and protons (>1 MeV) in a broad energy range, and radiation effects from solar energetic particles and galactic cosmic rays at aviation altitudes. A unique aspect of the Space Radiation and Plasma Effects focus area is that it bridges the space environments, engineering, and user communities. The intent of the paper is to provide an overview of the current status and to suggest a guide for how to best validate space environment models for operational/engineering use, which includes selection of essential space environment and effect quantities and appropriate metrics.

Zheng, Yihua↗