Chemical vapor deposition of monolayer MoS 2 directly on ultrathin Al 2 O 3 for low-power electronics
Monolayer MoS 2 has recently been identified as a promising material for high-performance electronics. However, monolayer MoS 2 must be integrated with ultrathin high-κ gate dielectrics in order to realize practical low-power devices. In this paper, we report the chemical vapor deposition (CVD) of monolayer MoS 2 directly on 20 nm thick Al 2 O 3 grown by atomic layer deposition (ALD). The quality of the resulting MoS 2 is characterized by a comprehensive set of microscopic and spectroscopic techniques. Furthermore, a low-temperature (200 °C) Al 2 O 3 ALD process is developed that maintains dielectric integrity following the high-temperature CVD of MoS 2 (800 °C). Field-effect transistors (FETs) derived from these MoS 2 /Al 2 O 3 stacks show minimal hysteresis with a sub-threshold swing as low as ~220 mV/decade, threshold voltages of ~2 V, and current I ON /I OFF ratio as high as ~10 4 , where I OFF is defined as the current at zero gate voltage as is customary for determining power consumption in complementary logic circuits. Finally, the system presented here concurrently optimizes multiple low-power electronics figures of merit while providing a transfer-free method of integrating monolayer MoS 2 with ultrathin high-κ dielectrics, thus enabling a scalable pathway for enhancement-mode FETs for low-power applications.