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At least 325 records · Page 18

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DOE OSTI2024

Peak effect and dynamics of stripe- and pattern-forming systems on a periodic one-dimensional substrate

Here we examine the ordering, pinning, and dynamics of two-dimensional pattern-forming systems interacting with a periodic one-dimensional substrate. In the absence of the substrate, particles with competing long-range repulsion and short-range attraction form anisotropic crystal, stripe, and bubble states. When the system is tuned across the stripe transition in the presence of a substrate, we find that there is a peak effect in the critical depinning force when the stripes align and become commensurate with the substrate. Under an applied drive, the anisotropic crystal and stripe states can exhibit soliton depinning and plastic flow. When the stripes depin plastically, they dynamically reorder into a moving stripe state that is perpendicular to the substrate trough direction. We also find that when the substrate spacing is smaller than the widths of the bubbles or stripes, the system forms pinned stripe states that are perpendicular to the substrate trough direction. The system exhibits multiple reentrant pinning effects as a function of increasing attraction, with the anisotropic crystal and large bubble states experiencing weak pinning but the stripe and smaller bubble states showing stronger pinning. We map out the different dynamic phases as a function of filling, the strength of the attractive interaction term, the substrate strength, and the drive, and demonstrate that the different phases produce identifiable features in the transport curves and particle orderings.

97 MATHEMATICS AND COMPUTING↗

NASA NTRS1990

Laser ablated high T(sub c) superconducting thin YBa2Cu3O(7-x) films on substrates suitable for microwave applications

The development of high temperature superconducting YBa2Cu3O(7-x) thin films on substrates suitable for microwave applications is of great interest for evaluating their applications for space radar, communication, and sensor systems. Thin films of YBa2Cu3O(7-x) were formed on SrTiO3, ZrO2, MgO, and LaAlO3 substrates by laser ablation. The wavelength used was 248 nm from a KrF excimer laser. During deposition the films were heated to 600 C in a flowing oxygen environment, and required no post annealing. The low substrate temperature during deposition with no post annealing gave films which were smooth, which had their c-axis aligned to the substrates, and which had grains ranging from 0.2 to 0.5 microns in size. The films being c-axis aligned gave excellent surface resistance at 35 GHz which was lower than that of copper at 77 K. At present, LaAlO3 substrates with a dielectric constant of 22, appears suitable as a substrate for microwave and electronic applications. The films were characterized by resistance-temperature measurements, scanning electron microscopy, and x ray diffraction. The highest critical transition temperatures (T sub c) are above 89 K for films on SrTiO3 and LaAlO3, above 88 K for ZrO2, and above 86 K for MgO. The critical current density (J sub c) of the films on SrTiO3 is above 2 x 10(exp 6) amperes/sq cm at 77 K. The T(sub c) and J(sub c) are reported as a function of laser power, composition of the substrate, and temperature of the substrate during deposition.

Warner, J. D.↗

NASA NTRS1999

Direct Numerical Simulation of Wetting and Spreading Behavior on Heterogeneous and Roughened Substrates

A method of calculation is presented that allows the simulation of the time-dependent three-dimensional motion of thin liquid layers on solid substrates for systems with finite equilibrium contact angles. The contact angle is a prescribed function of position on the substrate. Similar mathematical models are constructed for substrates with a pattern of roughness. Evolution equations are given, using the lubrication approximation, that include viscous, capillary and disjoining forces. Motion to and from dry substrate regions is made possible by use of a thin energetically-stable wetting layer. We simulate motion on heterogeneous substrates with periodic arrays of high contact-angle patches. Two different problems are treated for heterogenous substrates. The first is spontaneous motion driven only by wetting forces. If the contact-angle difference is sufficiently high, the droplet can find several different stable positions, depending on the previous history of the motion. A second simulation treats a forced cyclical motion. Energy dissipation per cycle for a heterogeneous substrate is found to be larger than for a uniform substrate with the same total energy. The Landau-Levich solution for plate removal from a liquid bath is extended to account for a pattern of roughness on the plate.

Schwartz, Leonard W.↗

NASA NTRS2004

RFID and Memory Devices Fabricated Integrally on Substrates

Electronic identification devices containing radio-frequency identification (RFID) circuits and antennas would be fabricated integrally with the objects to be identified, according to a proposal. That is to say, the objects to be identified would serve as substrates for the deposition and patterning of the materials of the devices used to identify them, and each identification device would be bonded to the identified object at the molecular level. Vacuum arc vapor deposition (VAVD) is the NASA derived process for depositing layers of material on the substrate. This proposal stands in contrast to the current practice of fabricating RFID and/or memory devices as wafer-based, self-contained integrated-circuit chips that are subsequently embedded in or attached to plastic cards to make smart account-information cards and identification badges. If one relies on such a chip to store data on the history of an object to be tracked and the chip falls off or out of the object, then one loses both the historical data and the means to track the object and verify its identity electronically. Also, in contrast is the manufacturing philosophy in use today to make many memory devices. Today s methods involve many subtractive processes such as etching. This proposal only uses additive methods, building RFID and memory devices from the substrate up in thin layers. VAVD is capable of spraying silicon, copper, and other materials commonly used in electronic devices. The VAVD process sprays most metals and some ceramics. The material being sprayed has a very strong bond with the substrate, whether that substrate is metal, ceramic, or even wood, rock, glass, PVC, or paper. An object to be tagged with an identification device according to the proposal must be compatible with a vacuum deposition process. Temperature is seldom an issue as the substrate rarely reaches 150 F (66 C) during the deposition process. A portion of the surface of the object would be designated as a substrate for the deposition of the device. By use of a vacuum arc vapor deposition apparatus, a thin electrically insulating film would first be deposited on the substrate. Subsequent layers of materials would then be deposited and patterned by use of known integrated-circuit fabrication techniques. The total thickness of the deposited layers could be much less than the 100- m thickness of the thinnest state-of-the-art self-contained microchips. Such a thin deposit could be readily concealed by simply painting over it. Both large vacuum chambers for production runs and portable hand-held devices for in situ applications are available.

Schramm, Harry F.↗

NASA NTRS2016

Carbon Nanotube Patterning on a Metal Substrate

A CNT electron source, a method of manufacturing a CNT electron source, and a solar cell utilizing a CNT patterned sculptured substrate are disclosed. Embodiments utilize a metal substrate which enables CNTs to be grown directly from the substrate. An inhibitor may be applied to the metal substrate to inhibit growth of CNTs from the metal substrate. The inhibitor may be precisely applied to the metal substrate in any pattern, thereby enabling the positioning of the CNT groupings to be more precisely controlled. The surface roughness of the metal substrate may be varied to control the density of the CNTs within each CNT grouping. Further, an absorber layer and an acceptor layer may be applied to the CNT electron source to form a solar cell, where a voltage potential may be generated between the acceptor layer and the metal substrate in response to sunlight exposure.

Nguyen, Cattien V.↗

DOE OSTI2012

Apparatus and method for rapid cooling of large area substrates in vacuum

The present invention is directed to an apparatus and method for rapid cooling of a large substrate in a vacuum environment. A first cooled plate is brought into close proximity with one surface of a flat substrate. The spatial volume between the first cooling plate and the substrate is sealed and brought to a higher pressure than the surrounding vacuum level to increase the cooling efficiency. A second cooled plate is brought into close proximity with the opposite surface of the flat substrate. A second spatial volume between the second cooling plate and the substrate is sealed and the gas pressure is equalized to the gas pressure in the first spatial volume. The equalization of the gas pressure on both sides of the flat substrate eliminates deflection of the substrate and bending stress in the substrate.

42 ENGINEERING↗

DOE OSTI2018

Metal oxide nanorod arrays on monolithic substrates

A metal oxide nanorod array structure according to embodiments disclosed herein includes a monolithic substrate having a surface and multiple channels, an interface layer bonded to the surface of the substrate, and a metal oxide nanorod array coupled to the substrate surface via the interface layer. The metal oxide can include ceria, zinc oxide, tin oxide, alumina, zirconia, cobalt oxide, and gallium oxide. The substrate can include a glass substrate, a plastic substrate, a silicon substrate, a ceramic monolith, and a stainless steel monolith. The ceramic can include cordierite, alumina, tin oxide, and titania. The nanorod array structure can include a perovskite shell, such as a lanthanum-based transition metal oxide, or a metal oxide shell, such as ceria, zinc oxide, tin oxide, alumina, zirconia, cobalt oxide, and gallium oxide, or a coating of metal particles, such as platinum, gold, palladium, rhodium, and ruthenium, over each metal oxide nanorod. Structures can be bonded to the surface of a substrate and resist erosion if exposed to high velocity flow rates.

36 MATERIALS SCIENCE↗

DOE OSTI2019

Comparative Characterization of Magnetic Properties of Textured Ni–5 at.%W Alloy Substrates

The hysteresis loss of Ni–5 at.%W (Ni5W) substrate contributes considerably to the alternating current (AC) loss of coated conductors (CCs) working at low transporting current or low-frequency field. In the present work, the evolution of texture and magnetic properties in Ni5W substrates is analyzed and also the relationship between magnetic properties and the extrinsic characteristics (evolved due to the processing techniques) is determined. By making the comparison, we discovered the magnetic domain structures of Ni5W substrates for the first time, achieving a strip/branched domain structures in the recrystallized substrates. The hysteresis loss has been decreased dramatically for the recrystallized substrates. Interestingly, we also observed that this loss is also related to the annealing temperature in the fully recrystallized substrates. The reduced loss can be mainly attributed toward the decrease of grain boundary, which proves the contribution of grain size toward the reduction of hysteresis loss. This result provides a new insight to tailor the hysteresis loss of Ni5W substrates used for coated conductors.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2019

Effect of Substrate Temperature on Structural, Morphological, Magnetic, and Electrical Properties of Fe{sub 2}CoSi Heusler Alloy Thin Films for Spin-Based Device Applications

Fe{sub 2}CoSi based Heusler alloy thin films are deposited on single crystal Si (111) substrate at different substrate temperatures varying from room temperature to 600 °C using ultrahigh vacuum DC magnetron sputtering. Structural analysis of the prepared thin films is carried out using GI-XRD measurement and it conform ordered L2{sub 1} crystal structure of the films deposited at 450 °C and above. The atomic force microscopic (AFM) images of Fe{sub 2}CoSi thin films exhibiting 3D-like growth on Si (111) substrate at varying temperatures. The magnetic property of the thin films is studied using vibrating sample magnetometer (VSM). At 450 °C of substrate temperature, the prepared thin film exhibits high saturation magnetization (M{sub s} = 948 emu/cc) and low coercivity (H{sub c} = 8 Oe). The self-energy magnetization of the film and its own field is very high, when the temperature of the substrate was maintained at 450 °C and switching field ratio for this film was obtained as ~ 0.9 due to its high crystallinity and atomic ordering. The electrical property of Fe{sub 2}CoSi thin film is investigated using four-probe technique and a positive magnetoresistive behavior was observed for thin film deposited at a substrate temperature of 450 °C which indicates the possible half-metallic nature at room temperature. The enhanced magnetic and electrical properties obtained for the thin film prepared at 450 °C substrate temperature is highly suitable for spin based device applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2019

Influence of Substrate Bias Voltage on Corrosion and Wear Behavior of Physical Vapor Deposition CrN Coatings

The objective of the present paper is to study the influence of the substrate bias voltage on the microstructure, composition, deposition rate, tribological and corrosion properties of CrN coatings obtained by DC magnetron sputtering on 90CrMoV8 steel and Si (100) substrates. The substrate bias voltage varied from 0 to − 700 V. The deposited films were characterized by SEM, XRD and potentiodynamic polarization. The wear behavior and coefficient of friction were determined and investigated after rotative tribometer tests. The results indicated that the substrate bias voltage considerably affected the intrinsic properties of the CrN films. Indeed, it significantly influenced the grain size and the root-mean-squared roughness which varied from 20 to 29 nm, and from 9 to 19 nm, respectively, when polarization changed from 0 to − 700 V. All the CrN coatings have a dense columnar structure and are well crystallized according to the XRD analyses. Nevertheless, it has been shown that the peaks intensity decreased by increasing the substrate bias voltage. By applying a substrate bias voltage, it was obvious that the friction behavior was enhanced, and the wear volume was decreased. Finally, the CrN coating obtained under a substrate bias voltage of − 500 V presented the best corrosion resistance and wear resistance probably due to its dense microstructure.

36 MATERIALS SCIENCE↗

DOE OSTI2014

Controlled growth of ZnO nanorods on textured silicon wafer and the application for highly effective and recyclable SERS substrate by decorating Ag nanoparticles

Highlights: • The growth behavior of ZnO nanorods (NRs) is studied on the textured Si wafer. • A new surface-enhanced Raman scattering (SERS) substrate has been achieved by assembling Ag nanoparticles onto the ZnO NRs. • The SERS substrate exhibits good performance in terms of high sensitivity, good reproducibility and recyclability. - Abstract: Based on the study of growth behavior of ZnO nanorods on the textured Si wafer, a new three-dimensional surface-enhanced Raman scattering substrate has been achieved by assembling Ag nanoparticles onto the ZnO nanorods to form a radial plasmonic nanostructure. It is found that the new substrate exhibits good performance in terms of high sensitivity and good reproducibility for surface-enhanced Raman scattering. The determined enhancement factor is in the order of 10{sup 7} and the Raman spectra exhibit the remarkable consistency with the deviation below 5.0%. Compared to the substrate fabricated with ZnO nanorod array on the flat Si wafer, the new substrates have the higher utility of excitation light. Meanwhile, the new substrate is demonstrated to be recyclable after the irradiation of ultraviolet light.

36 MATERIALS SCIENCE↗

DOE OSTI2022

Bicontinuous substrates with reduced pore restriction for CO 2 -selective composite membranes

A substrate with bicontinuous structure is attractive for thin-film composite (TFC) membrane synthesis due to its high surface porosity and well-interconnected bulk morphology. In this study, the vapor-induced phase separation (VIPS) of the casting solution comprising water, 2-pyrrolidone, and polyethersulfone (PES) was studied. By tuning the water addition in the casting solution and water vapor exposure time, the optimized substrate exhibited a bicontinuous surface with a high porosity of 24.2% (or 216/µm 2 pore density), thereby mitigating pore restriction and showing a high CO 2 permeance of 2.94×10 5 GPU. Compared to the benchmark PES substrate with cellular surface pores and lower gas permeance, the use of the bicontinuous substrate led to a 12% increase in the CO 2 permeance of the TFC membrane. The mitigated pore restriction was further rationalized by a resistance-in-series model. The analysis of the lateral diffusion and substrate resistances indicates that an even higher surface pore density of the substrate is required to fully realize the potential of ultra-permeable, CO 2 -selective polymers in the TFC configuration. As a result, the scalability of the VIPS process was demonstrated by the roll-to-roll fabrication of the optimized bicontinuous substrate with a width of 21" and a length of >100'.

42 ENGINEERING↗

DOE OSTI2025

Ultrathin VO 2 Films on Functional Substrates

The metal–insulator transition (MIT) in vanadium dioxide (VO 2 ) thin films is strongly affected by grain size, thickness, and interfacial properties. Typically, a minimum thickness around 50 nm is required for VO 2 to exhibit a significant MIT when functional substrates like sapphire and silicon are used. Several works have shown that thin films below 20 nm, with up to 2–3 decades of change in the resistance across the MIT, can be achieved but require complex pre- or postprocessing of the samples. We show that predeposition substrate condition control facilitates the direct growth of VO 2 ultrathin 15 nm films, exhibiting a resistance change between 3 and 4 decades across the MIT. Our findings indicate that the interface between the film and the substrate is crucial in determining the initial growth layers and the structural evolution. With appropriate substrate surface treatment, the desired VO 2 MIT can be enhanced regardless of the substrate crystallographic orientation. Moreover, we propose a novel approach to obtain large resistance changes across the MIT in ultrathin VO 2 films by incorporating a predeposited 1.5 nm vanadium oxide buffer layer, thereby eliminating the need to use different materials or complex pre- or postprocessing of the samples. Here we also demonstrate that this method improves the transition of 25–50 nm VO 2 thin films on silicon substrates. Our study reveals a simple approach for direct growth of ultrathin VO 2 films exhibiting a significant MIT, which is commonly accepted unattainable over substrates of technological importance, such as sapphire and silicon.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2016

Substrate-Independent Light Confinement in Bioinspired All-Dielectric Surface Resonators

Traditionally, photonic crystal slabs can support resonances that are strongly confined to the slab but also couple to external radiation. However, when a photonic crystal slab is placed on a substrate, the resonance modes become less confined, and as the index contrast between slab and substrate decreases, they eventually disappear. Using the scale structure of the Dione juno butterfly wing as an inspiration, we present here a low-index zigzag surface structure that supports resonance modes even without index contrast with the substrate. The zigzag structure supports resonances that are contained away from the substrate, which reduces the interaction between the resonance and the substrate. We experimentally verify the existence of substrate-independent resonances in the visible wavelength regime. Potential applications include substrate-independent structural color and light guiding.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE OSTI2013

Crystallographically tilted and partially strain relaxed GaN grown on inclined (111) facets etched on Si(100) substrate

High resolution X-ray diffractometry (HR-XRD), Photoluminescence, Raman spectroscopy, and Transmission electron microscope measurements are reported for GaN deposited on a conventional Si(111) substrate and on the (111) facets etched on a Si(100) substrate. HR-XRD reciprocal space mappings showed that the GaN(0002) plane is tilted by about 0.63° ± 0.02° away from the exposed Si(111) growth surface for GaN deposited on the patterned Si(100) substrate, while no observable tilt existed between the GaN(0002) and Si(111) planes for GaN deposited on the conventional Si(111) substrate. The ratio of integrated intensities of the yellow to near band edge (NBE) luminescence (I{sub YL}/I{sub NBE}) was determined to be about one order of magnitude lower in the case of GaN deposited on the patterned Si(100) substrate compared with GaN deposited on the conventional Si(111) substrate. The Raman E{sub 2}(high) optical phonon mode at 565.224 ± 0.001 cm{sup −1} with a narrow full width at half maximum of 1.526 ± 0.002 cm{sup −1} was measured, for GaN deposited on the patterned Si(100) indicating high material quality. GaN deposition within the trench etched on the Si(100) substrate occurred via diffusion and mass-transport limited mechanism. This resulted in a differential GaN layer thickness from the top (i.e., 1.8 μm) of the trench to the bottom (i.e., 0.3 μm) of the trench. Mixed-type dislocation constituted about 80% of the total dislocations in the GaN grown on the inclined Si(111) surface etched on Si(100)

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2014

Role of substrate aspect ratio on the robustness of capillary alignment

Capillary forces associated with liquid bridges formed across solid substrates are routinely exploited to align and assemble micro- and nanoscale devices. The magnitude of these forces plays a critical role in minimizing substrate misalignment and therefore should be controlled for robust and reliable fabrication process. We explore through simulations and experiments the role of the substrate aspect ratio (L/W) on capillary restoring forces and torques. Simulations show that increasing the aspect ratio of the substrates increases the capillary torques and forces when the substrates are misaligned through either lateral or rotational perturbations. The effect of substrate area, perimeter, and liquid volume are also systematically explored to show that the increase in restoring torque is caused by an increase in aspect ratio. A simple theoretical model based on the geometry of the system shows excellent agreement with Surface Evolver simulations. Finally, parameters from experimental flip-chip devices [Josell, D. Wallace, W.E. Warren, J.A. Wheeler, D. Powell, A.C. J. Electron. Packag. 124, 227, (2002)] are used in our simulations to show how current capillary self-alignment schemes could benefit from using rectangular substrate shapes with aspect ratio greater than one.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE OSTI2014

The effect of substrate on thermodynamic and kinetic anisotropies in atomic thin films

Glasses have a wide range of technological applications. The recent discovery of ultrastable glasses that are obtained by depositing the vapor of a glass-forming liquid onto the surface of a cold substrate has sparked renewed interest in the effects of confinements on physicochemical properties of liquids and glasses. Here, we use molecular dynamics simulations to study the effect of substrate on thin films of a model glass-forming liquid, the Kob-Andersen binary Lennard-Jones system, and compute profiles of several thermodynamic and kinetic properties across the film. We observe that the substrate can induce large oscillations in profiles of thermodynamic properties such as density, composition, and stress, and we establish a correlation between the oscillations in total density and the oscillations in normal stress. We also demonstrate that the kinetic properties of an atomic film can be readily tuned by changing the strength of interactions between the substrate and the liquid. Most notably, we show that a weakly attractive substrate can induce the emergence of a highly mobile region in its vicinity. In this highly mobile region, structural relaxation is several times faster than in the bulk, and the exploration of the potential energy landscape is also more efficient. In the subsurface region near a strongly attractive substrate, however, the dynamics is decelerated and the sampling of the potential energy landscape becomes less efficient than the bulk. We explain these two distinct behaviors by establishing a correlation between the oscillations in kinetic properties and the oscillations in lateral stress. Our findings offer interesting opportunities for designing better substrates for the vapor deposition process or developing alternative procedures for situations where vapor deposition is not feasible.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2014

Electron mobility calculation for graphene on substrates

By a semiclassical Monte Carlo method, the electron mobility in graphene is calculated for three different substrates: SiO{sub 2}, HfO{sub 2}, and hexagonal boron nitride (h-BN). The calculations account for polar and non-polar surface optical phonon (OP) scatterings induced by the substrates and charged impurity (CI) scattering, in addition to intrinsic phonon scattering in pristine graphene. It is found that HfO{sub 2} is unsuitable as a substrate, because the surface OP scattering of the substrate significantly degrades the electron mobility. The mobility on the SiO{sub 2} and h-BN substrates decreases due to CI scattering. However, the mobility on the h-BN substrate exhibits a high electron mobility of 170 000 cm{sup 2}/(V·s) for electron densities less than 10{sup 12 }cm{sup −2}. Therefore, h-BN should be an appealing substrate for graphene devices, as confirmed experimentally.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗