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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 325 records · Page 18
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Gate-Tunable Transport in Quasi-One-Dimensional α-Bi 4 I 4 Field Effect Transistors

Bi 4 I 4 belongs to a novel family of quasi-one-dimensional (1D) topological insulators (TIs). While its β phase was demonstrated to be a prototypical weak TI, the α phase, long thought to be a trivial insulator, was recently predicted to be a rare higher order TI. Here, we report the first gate tunable transport together with evidence for unconventional band topology in exfoliated α-Bi 4 I 4 field effect transistors. We observe a Dirac-like longitudinal resistance peak and a sign change in the Hall resistance; their temperature dependences suggest competing transport mechanisms: a hole-doped insulating bulk and one or more gate-tunable ambipolar boundary channels. Our combined transport, photoemission, and theoretical results indicate that the gate-tunable channels likely arise from novel gapped side surface states, two-dimensional (2D) TI in the bottommost layer, and/or helical hinge states of the upper layers. Markedly, a gate-tunable supercurrent is observed in an α-Bi 4 I 4 Josephson junction, underscoring the potential of these boundary channels to mediate topological superconductivity.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2021

Noncompact atomic insulators

Here we study the conditions for Bloch bands to be spanned by symmetric and strictly compact Wannier states that have zero overlap with all lattice sites beyond a certain range. Similar to the characterization of topological insulators in terms of an algebraic (rather than exponential) localization of Wannier states, we find that there may be impediments to the compact localization even of topologically “trivial” obstructed atomic insulators. These insulators admit exponentially localized Wannier states centered at unoccupied orbitals of the crystalline lattice. First, we establish a sufficient condition for an insulator to have a compact representative. Second, for $\mathscr{C}_2$ rotational symmetry, we prove that the complement of fragile topological bands cannot be compact, even if it is an atomic insulator. Third, for $\mathscr{C}_4$ symmetry, our findings imply that there exist fragile bands with zero correlation length. Fourth, for a $\mathscr{C}_3$-symmetric atomic insulator, we explicitly derive that there are no compact Wannier states overlapping with less than 18 lattice sites. We conjecture that this obstruction generalizes to all finite Wannier sizes. Our results can be regarded as the stepping stone to a generalized theory of Wannier states beyond dipole or quadrupole polarization.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Fractional quantization in insulators from Hall to Chern

The discovery of the integer and fractional quantum Hall effects naturally prompted the question of whether these effects can be realized without a magnetic field. Answering this is fundamentally important and requires a synthesis of the concepts of band topology, quantum geometry and electronic correlations. Here we summarize the basic concepts of both fractional Chern and fractional topological insulators and illustrate them with the theoretical lattice models that support the flat Chern bands in which the states were first predicted. We then examine their experimental realizations in twisted bilayer transition metal dichalcogenides and moiré rhombohedral few-layer graphene. Here, we also discuss the future challenges and opportunities in this research field.

Quantum Hall↗
DOE OSTI2023

Energy gap of topological surface states in proximity to a magnetic insulator

Abstract Topological surface-states can acquire an energy gap when time-reversal symmetry is broken by interfacing with a magnetic insulator. This gap has yet to be measured. Such topological-magnetic insulator heterostructures can host a quantized anomalous Hall effect and can allow the control of the magnetic state of the insulator in a spintronic device. In this work, we observe the energy gap of topological surface-states in proximity to a magnetic insulator using magnetooptical Landau level spectroscopy. We measure Pb 1-x Sn x Se–EuSe heterostructures grown by molecular beam epitaxy exhibiting a record mobility and low Fermi energy. Through temperature dependent measurements and theoretical calculations, we show this gap is likely due to quantum confinement and conclude that the magnetic proximity effect is weak in this system. This weakness is disadvantageous for the realization of the quantum anomalous Hall effect, but favorable for spintronic devices which require the preservation of spin-momentum locking at the Fermi level.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

Vapor transport growth of MnBi 2 Te 4 and related compounds

Motivated by fine tuning of the magnetic and topological properties of MnBi 2 Te 4 via defect engineering, in this work, we report the crystal growth of MnBi 2 Te 4 and related compounds using vapor transport method and crystal characterization by measuring elemental ratio, magnetic and transport properties, and scanning tunneling microscopy. For the growth of MnBi 2 Te 4 single crystals, I 2 , MnI 2 , MnCl 2 , TeCl 4 , and MoCl 5 are all effective transport agents; chemical transportation occurs faster in the presence of iodides than chlorides. We further successfully grow MnSb 2 Te 4 , MnBi 2-x Sb x Te 4 , and Sb-doped MnBi 4 Te 7 crystals. A small temperature gradient< 20°C between the hot and cold ends of the growth ampoule is critical for the successful crystal growth of MnBi 2 Te 4 and related compounds. Compared to flux grown crystals, vapor transported crystals tend to be Mn stoichiometric, and Sb-bearing compositions have more Mn/Sb site mixing. The vapor transport growth provides a new materials synthesis approach to fine tune the magnetic and topological properties of these intrinsic magnetic topological insulators where controlling defects is vital.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Metamagnetism of few-layer topological antiferromagnets

MnBi 2 Te 4 (MBT) materials are a promising class of antiferromagnetic topological insulators whose films provide access to novel and technologically important topological phases, including quantum anomalous Hall states and axion insulators. MBT device behavior is expected to be sensitive to the various collinear and noncollinear magnetic phases that are accessible in applied magnetic fields. Here, we use classical Monte Carlo simulations and electronic structure models to calculate the ground state magnetic phase diagram as well as topological and optical properties for few-layer films with up to six septuple layers. Using magnetic interaction parameters appropriate for MBT, we find that it is possible to prepare a variety of different magnetic stacking sequences, some of which have sufficient symmetry to disallow nonreciprocal optical response and Hall transport coefficients. Other stacking arrangements do yield large Faraday and Kerr signals, even when the ground state Chern number vanishes.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Classification of (2 + 1) D invertible fermionic topological phases with symmetry

Here we provide a classification of invertible topological phases of interacting fermions with symmetry in two spatial dimensions for general fermionic symmetry groups G f and general values of the chiral central charge c - . Here G f is a central extension of a bosonic symmetry group G b by fermion parity, (-1) F , specified by a second cohomology class [ω 2 ]∈ $\mathscr{H}^2$(Gb,$\mathbb{Z}_2$). Our approach proceeds by gauging fermion parity and classifying the resulting G b symmetry-enriched topological orders while keeping track of certain additional data and constraints. We perform this analysis through two perspectives, using G-crossed braided tensor categories and Spin(2c - ) 1 Chern-Simons theory coupled to a background G gauge field. These results give a way to characterize and classify invertible fermionic topological phases in terms of a concrete set of data and consistency equations, which is more physically transparent and computationally simpler than the more abstract methods using cobordism theory and spectral sequences. Our results also generalize and provide a different approach to the recent classification of fermionic symmetry-protected topological phases by Wang and Gu, which have chiral central charge c - = 0. We show how the tenfold way classification of topological insulators and superconductors fits into our scheme, along with general nonperturbative constraints due to certain choices of c - and G f . Mathematically, our results also suggest an explicit general parametrization of deformation classes of (2 + 1)D invertible topological quantum field theories with G f symmetry.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Dynamical symmetry indicators for Floquet crystals

Various exotic topological phases of Floquet systems have been shown to arise from crystalline symmetries. Yet, a general theory for Floquet topology that is applicable to all crystalline symmetry groups is still in need. In this work, we propose such a theory for (effectively) non-interacting Floquet crystals. We first introduce quotient winding data to classify the dynamics of the Floquet crystals with equivalent symmetry data, and then construct dynamical symmetry indicators (DSIs) to sufficiently indicate the inherently dynamical Floquet crystals. The DSI and quotient winding data, as well as the symmetry data, are all computationally efficient since they only involve a small number of Bloch momenta. We demonstrate the high efficiency by computing all elementary DSI sets for all spinless and spinful plane groups using the mathematical theory of monoid, and find a large number of different nontrivial classifications, which contain both first-order and higher-order 2+1D anomalous Floquet topological phases. Using the framework, we further find a new 3+1D anomalous Floquet second-order topological insulator (AFSOTI) phase with anomalous chiral hinge modes.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Near‐Field Characterization of Higher‐Order Topological Photonic States at Optical Frequencies

Abstract Higher‐order topological insulators (HOTIs) represent a new type of topological system, supporting boundary states localized over boundaries, two or more dimensions lower than the dimensionality of the system itself. Interestingly, photonic HOTIs can possess a richer physics than their original condensed matter counterpart, supporting conventional HOTI states based on tight‐binding coupling, and a new type of topological HOTI states enabled by long‐range interactions. Here, a new mechanism to establish all‐dielectric infrared HOTI metasurfaces exhibiting both types of HOTI states is proposed, supported by a topological transition accompanied by the emergence of topological Wannier‐type polarization. Two kinds of near‐field experimental studies are performed: i) the solid immersion spectroscopy and ii) near‐field imaging using scattering scanning near‐field optical microscopy to directly observe the topological transition and the emergence of HOTI states of two types. It is shown that the near‐field profiles indicate the displacement of the Wannier center across the topological transition leading to the topological dipole polarization and emergence of the topological boundary states. The proposed all‐dielectric HOTI metasurface offers a new approach to confine the optical field in micro‐ and nano‐scale topological cavities and thus paves the way to achieve a novel nanophotonic technology.

Vakulenko, Anton↗
DOE OSTI2020

Na-functionalized Ir Te 2 monolayer: Suppressed charge ordering and electric field tuned topological phase transition

Two-dimensional materials with atomic thickness usually possess superior tunability by surface adsorption than their bulk counterparts, showing great promise for novel nanotechnologies. In layered transition-metal dichalcogenide IrTe 2 there exhibits complex structural distortions induced by charge ordering, resulting in difficulties for the applications of its corresponding monolayer material. Here, using first-principles calculations, we demonstrate that depositing Na on the surface of the IrTe 2 monolayer can suppress the structural distortion to form a stable NaIrTe 2 sheet. It naturally breaks the inversion symmetry to enable a Rashba-type spin splitting for potential spintronic applications. In addition, the introduced empty Na s band and the valence band of the IrTe 2 monolayer can be inverted by the application of a perpendicular electric field, achieving a quantum phase transition from normal to topological insulator. Such an electric field-controlled topological phase transition is promising for the realization of topological field-effect transistors. Furthermore, these findings not only provide a feasible approach to stabilizing the IrTe 2 monolayer, but also broaden its applications in spintronics and low-dissipation topoelectronics.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Magnon Landau Levels and Spin Responses in Antiferromagnets

We study gauge fields produced by gradients of the Dzyaloshinskii-Moriya interaction and propose a model of an AFM topological insulator of magnons. In the long wavelength limit, the Landau levels induced by the inhomogeneous Dzyaloshinskii-Moriya interaction exhibit relativistic physics described by the Klein-Gordon equation. The spin Nernst response due to the formation of magnonic Landau levels is compared to similar topological responses in skyrmion and vortex-antivortex crystal phases of AFM insulators. Here, our studies show that AFM insulators exhibit rich physics associated with topological magnon excitations.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Disorder driven variations in magnetoresistance and planar Hall effect in Bi 2 Te 3 thin films

The degenerately doped sesquichalcogenide Bi 2 Te 3 , a well-known thermoelectric material, has attracted much attention in recent years as a topological insulator in which conducting surface states lead to exotic electronic transport. Here, in this study, we report the observation of anisotropic magnetoresistance (AMR) and planar Hall effect (PHE) in polycrystalline thin films of Bi 2 Te 3 over a broad range of temperature and magnetic field strength. The values of AMR, PHE and the Hall mobility (μ H ) are compared with results of similar measurements on single crystals and epitaxial films of Bi 2 Te 3 , where these properties are understood in the framework of electronic transport in the topologically protected conducting surface states. Our textured polycrystalline films show a robust metallic character with a carrier density (n s ) and mobility μ H of 9×10 20 cm -3 and 16.7 cm 2 V -1 s -1 respectively. This carrier density is higher and the mobility lower by an order of magnitude compared to the reported values of n s and μ H in epitaxial films and single crystals. However, we see a comparable AMR and PHE in our films for which the concept of conducting surface states is ill-defined due to their polycrystallinity and disordered structure. We suggest that an anisotropic backscattering of charge carriers in the strongly spin – orbit coupled electronic states of this heavy-metal-based non-magnetic compound may lead to the measured resistivity anisotropy. The observation of AMR and PHE in polycrystalline films may be important for scalable production of Bi 2 Te 3 based AMR and PHE sensors of magnetic fields.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Experimental study of electromagnetic wave scattering from a gyrotropic gaseous plasma column

We experimentally demonstrate the controlled scattering of incident transverse-electric electromagnetic waves from a gyrotropic magnetized plasma cylindrical discharge. Scattered electromagnetic waves can bend left and right by changing the external magnetic field of a plasma rod. Measured scattered wavefronts are in good agreement with electromagnetic simulations. A gyrotropic response is observed for incident wave frequencies ranging from 3.5 to 5.6 GHz for conditions corresponding to a ratio of cyclotron frequency to plasma frequency, ω ce /ω p ≈ 0.16. In conclusion, the observation of a gyrotropic response from cylindrical plasma discharges paves the way for their use as building blocks for future devices such as magnetized plasma photonic crystals, topological insulators, plasma metamaterials, non-reciprocal waveguide structures, and other devices, which require a tunable gyrotropic response from centimeter to meter-scale materials with application-specific geometry.

42 ENGINEERING↗
DOE OSTI2023

Temperature dependence of the energy band gap in ZrTe 5 : Implications for the topological phase

Using Landau level spectroscopy, we determine the temperature dependence of the energy band gap in zirconium pentatelluride (ZrTe 5 ). We find that the band gap reaches E g = (5±1) meV at low temperatures and increases monotonously when the temperature is raised. So this implies that ZrTe 5 is a weak topological insulator, with non-inverted ordering of electronic bands in the center of the Brillouin zone. Our magneto-transport experiments performed in parallel show that the resistivity anomaly in ZrTe 5 is not connected with the temperature dependence of the band gap.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Optimization of the Growth of the Van der Waals Materials Bi 2 Se 3 and (Bi 0.5 In 0.5 ) 2 Se 3 by Molecular Beam Epitaxy

The naturally existing chalcogenide Bi 2 Se 3 is topologically nontrivial due to the band inversion caused by the strong spin-orbit coupling inside the bulk of the material. Here, the surface states are spin polarized, protected by the time-inversion symmetry, and thus robust to the scattering caused by nonmagnetic defects. A high-purity topological insulator thin film can be easily grown via molecular beam epitaxy (MBE) on various substrates to enable novel electronics, optics, and spintronics applications. However, the unique surface state properties have historically been limited by the film quality, which is evaluated by crystallinity, surface morphology, and transport data. Here we propose and investigate different MBE growth strategies to improve the quality of Bi 2 Se 3 thin films grown by MBE. Based on the surface passivation status, we have classified the substrates into two categories, self-passivated or unpassivated, and determine the optimal growth mechanisms on the representative sapphire and GaAs, respectively. For Bi 2 Se 3 on GaAs, the surface passivation status determines the dominant growth mechanism. In the end, growths of the topological trivial insulator (Bi 0.5 In 0.5 ) 2 Se 3 (BIS) on GaAs are investigated following the protocols proposed.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Development of deflector mode for spin-resolved time-of-flight photoemission spectroscopy

Spin- and angle-resolved photoemission spectroscopy (“spin-ARPES”) is a powerful technique for probing the spin degree-of-freedom in materials with nontrivial topology, magnetism, and strong correlations. Spin-ARPES faces severe experimental challenges compared to conventional ARPES attributed to the dramatically lower efficiency of its detection mechanism, making it crucial for instrumentation developments that improve the overall performance of the technique. Here in this paper, we demonstrate the functionality of our spin-ARPES setup based on time-of-flight spectroscopy and introduce our recent development of an electrostatic deflector mode to map out spin-resolved band structures without sample rotation. We demonstrate the functionality by presenting the spin-resolved spectra of the topological insulator Bi2Te3 and describe in detail the spectrum calibrations based on numerical simulations. By implementing the deflector mode, we minimize the need for sample rotation during measurements, hence improving the overall efficiency of experiments on small or inhomogeneous samples.

47 OTHER INSTRUMENTATION↗
DOE OSTI2021

van der Waals Epitaxy Growth of Bi 2 Se 3 on a Freestanding Monolayer Graphene Membrane: Implications for Layered Materials and Heterostructures

Research on two-dimensional and layered materials has expanded over the past 2 decades because of their unique properties and application potential. The key hurdles in realizing this potential are the challenges in controlling their atomic structure and their incompatibility with existing semiconductor nanofabrication techniques. Here we report on high-quality van der Waals epitaxial growth and characterization of a layered topological insulator on freestanding monolayer graphene transferred to different mechanical supports. This “templated” synthesis approach enables direct interrogation of the interfacial atomic structure of the as-grown materials and opens a route toward creating device structures with more traditional semiconductor nanofabrication techniques.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Imaging the electronic and magnetic structure of topological-superconductor proximity systems (Final Report)

The primary goals of the projects supported by this grant involved developing methods to detect and control electronic states that can aid in the construction of quantum-information devices, including quantum computers. Two types of materials are needed to create these electronic states: superconductors and topological insulators. The interplay of the quantum mechanics of these materials can give rise to elusive states known as Majorana fermions. Majorana Fermions have incredible potential for quantum technology; they can in principle encode quantum information non-locally, and can thus form the basis of especially robust qubits – the basic building blocks of quantum computers. A centerpiece goal of this work was to develop a Majorana detection tool called a Scanning Majorana Microscope. This tool was successfully developed.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗