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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 325 records · Page 18
All sourcesNASA NTRSDOE OSTI
NASA NTRS1989

The GaAs solar cells with V-grooved emitters

Geometrically structured surfaces have become increasingly important to solar cell efficiency improvements and radiation tolerance. Gallium arsenide solar cells with a V-grooved front surface which demonstrate improved optical coupling and higher short-circuit current compared to planar cells were fabricated. GaAs homojunction cells were fabricated by organometallic chemical vapor deposition (OMCVD) on an n+ substrate. The V-grooves were formed on the surface with an anisotropic etch, and an n-type buffer and p-type emitter were grown by OMCVD, followed by ohmic contacts. Reflectivity measurements show significantly lower reflectance for the microgrooved cell compared to the planar structure. The short circuit current of the V-grooved solar cell is consistently higher than that of the planar controls.

Bailey, Sheila G.↗
NASA NTRS1990

MBE growth technology for high quality strained III-V layers

The III-V films are grown on large automatically perfect terraces of III-V substrates which have a different lattice constant, with temperature and Group III and V arrival rates chosen to give a Group III element stable surface. The growth is pulsed to inhibit Group III metal accumulation of low temperature, and to permit the film to relax to equilibrium. The method of the invention: (1) minimizes starting step density on sample surface; (2) deposits InAs and GaAs using an interrupted growth mode (0.25 to 2 monolayers at a time); (3) maintains the instantaneous surface stoichiometry during growth (As-stable for GaAs, In-stable for InAs); and (4) uses time-resolved RHEED to achieve aspects (1) through (3).

Grunthaner, Frank J.↗
NASA NTRS1989

Gettering of donor impurities by V in GaAs and the growth of semi-insulating crystals

Vanadium added to the GaAs melt getters shallow donor impurities (Si and S) and decreases their concentration in the grown crystals. This gettering is driven by chemical reactions in the melt rather than in the solid. Employing V gettering, reproducibly semi-insulating GaAs were grown by horizontal Bridgman and liquid-encapsulated Czochralski techniques, although V did not introduce any midgap energy levels. The compensation mechanism in these crystals was controlled by the balance between the native midgap donor EL2 and residual shallow acceptors. Vanadium gettering contributed to the reduction of the concentration of shallow donors below the concentration of acceptors. The present findings clarify the long-standing controversy on the role of V in achieving semi-insulating GaAs.

Ko, K. Y.↗
NASA NTRS1988

A V-grooved GaAs solar cell

V-grooved GaAs solar cells promise the benefits of improved optical coupling, higher short-circuit current, and incrased tolerance to particle radiation compared to planar cells. A GaAs homojunction cell was fabricated by etching a V-groove pattern into an n-epilayer (2.1 x 10 to the 17th power per cu cm) grown by metalorganic chemical vapor deposition (MOCVD) on an n+ substrate (2.8 x 10 to the 18th power per cu cm) and then depositing an MOCVD p epilayer (4.2 x 10 to the 18th power per cu cm). Reflectivity measurements on cells with and without an antireflective coating confirm the expected decrease in reflectance of the microgrooved cell compared to the planar structure. The short-circuit current of the V-grooved solar cell was 13 percent higher than that of the planar control.

Bailey, S. G.↗
NASA NTRS1991

Constitution of pseudobinary hypoeutectic beta-NiAl + alpha-V alloys

The formation of pseudobinary eutectics between NiAl (beta) and V (alpha) at high temperatures was investigated as a possible way of improving the ductility and toughness of the alloy. It is found that a pseudobinary eutectic, characterized by a large beta+alpha field, is formed in the Ni-Al-V ternary system below about 1370 C. The high-temperature solubility of V in beta is about 14 percent, decreasing markedly with decreasing temperature and increasing Al content above 50 at. pct Al. The pseudobinary hypoeutectic exibits crack resistance under indentation loading.

Cotton, J. D.↗
NASA NTRS1991

The V-T energy transfer in collisions of diatomics

A general approach evaluating the transition probabilities for the V-T exchange, involving highly excited levels and the Delta-v greater than 1 transitions, in diatomic gases is presented. Examples of numerical results are given for a number of transitions in nitrogen and oxygen molecules in the ground electronic states. The approach can be used for the V-T exchange involving diatomic molecular ions.

Kunc, Joseph A.↗
NASA NTRS1993

Observed redshifts in O V and downflows in the solar transition region

Spectrograms from HRTS are used to find an average net redshift of the O V lines at 1218 and 1371 A at all locations extending from disk center to solar limb. The observed shift in O V is compared with measurements of the O IV line at 1401 A and the Si IV line at 1402 A. Large variations in the shift are found along the instrument slit. Blueshifts are also observed with the sites of the largest upflow located in the sunspot umbrae and in a quiet region close to an active region. The present result could put new constraints on numerical models of flows in the solar transition region and will also be of importance for modeling stellar atmospheres. The spatial variation of line-of-sight velocities in the O V line at 1371A and the SI IV line at 1402 A is illustrated.

Brekke, P.↗
NASA NTRS1993

The Hubble diagram in V for supernovae of Type Ia and the value of H(0) therefrom

The Hubble diagram for Type I supernovae is derived in V and is summarized from the literature in B and in m(pg). The ridge line equation of the diagram in V and the calibration of the absolute magnitudes at maximum are presented. The intrinsic (B - V) color at B maximum light is 0.09 +/- 0.04 mag. The Virgo Cluster distance is derived and found to be 23.9 +/- 2.4 Mpc. This Virgo distance gives the cosmic value of the Hubble constant to be H(0) = 47 +/- 5 km/sec per Mpc.

Sandage, Allan↗
NASA NTRS1994

Characteristics of III-V Semiconductor Devices at High Temperature

This paper presents the development of III-V based pseudomorphic high electron mobility transistors (PHEMT's) designed to operate over the temperature range 77 to 473 K (-196 to 200 C). These devices have a pseudomorphic undoped InGaAs channel that is sandwiched between an AlGaAs spacer and a buffer layer; gate widths of 200, 400, 1600, and 3200 micrometers; and a gate length of 2 micrometers. Measurements were performed at both room temperature and 473 K (200 C) and show that the drain current decreases by 30 percent and the gate current increases to about 9 microns A (at a reverse bias of -1.5 V) at the higher temperature. These devices have a maximum DC power dissipation of about 4.5 W and a breakdown voltage of about 16 V.

Simons, Rainee N.↗
NASA NTRS1995

Ring-plane traveling-wave tube slow-wave circuit design simulations at V-Band frequencies

The V-Band frequency range of 59-64 GHz is a region of the millimeter-wave spectrum that has been designated for intersatellite communications. As a first effort to develop a high-efficiency V-band TWT, variations on a ring-plane slow-wave circuit were computationally investigated to develop an alternative to the more conventional ferruled coupled-cavity circuit. The ring-plane circuit was chosen because of its high interaction impedance, large beam aperture, and excellent thermal dissipation properties. Despite the high-power capabilities of the ring-plane TWT, disadvantages of low bandwidth and high voltage requirements have until now prevented its acceptance outside the laboratory. In this paper, we use the three-dimensional electromagnetic simulation code MAFIA to investigate methods of increasing the bandwidth and lowering the operating voltage. Dispersion, impedance, and attenuation calculations for various geometric variations and loading distributions were performed. Based on the results of the variations, a circuit termed the finned-ladder TWT slowwave circuit was designed and is compared here to the scaled ring-plane prototype and the conventional ferruled coupled-cavity TWT circuit over the V-band frequency range.

Kory, Carol L.↗
NASA NTRS1994

Novel high-gain, improved-bandwidth, finned-ladder V-band Traveling-Wave Tube slow-wave circuit design

The V-band frequency range of 59-64 GHz is a region of the millimeter-wave spectrum that has been designated for inter-satellite communications. As a first effort to develop a high-efficiency V-band Traveling-Wave Tube (TWT), variations on a ring-plane slow-wave circuit were computationally investigated to develop an alternative to the more conventional ferruled coupled-cavity circuit. The ring-plane circuit was chosen because of its high interaction impedance, large beam aperture, and excellent thermal dissipation properties. Despite these advantages, however, low bandwidth and high voltage requirements have, until now, prevented its acceptance outside the laboratory. In this paper, the three-dimensional electrodynamic simulation code MAFIA (solution of MAxwell's Equation by the Finite-Integration-Algorithm) is used to investigate methods of increasing the bandwidth and lowering the operating voltage of the ring-plane circuit. Calculations of frequency-phase dispersion, beam on-axis interaction impedance, attenuation and small-signal gain per wavelength were performed for various geometric variations and loading distributions of the ring-plane TWT slow-wave circuit. Based on the results of the variations, a circuit termed the finned-ladder TWT slow-wave circuit was designed and is compared here to the scaled prototype ring-plane and a conventional ferruled coupled-cavity TWT circuit over the V-band frequency range. The simulation results indicate that this circuit has a much higher gain, significantly wider bandwidth, and a much lower voltage requirement than the scaled ring-plane prototype circuit, while retaining its excellent thermal dissipation properties. The finned-ladder circuit has a much larger small-signal gain per wavelength than the ferruled coupled-cavity circuit, but with a moderate sacrifice in bandwidth.

Kory, Carol L.↗
NASA NTRS1997

NASA software independent verification and validation (IV and V): An upfront approach to mission success

Software independent verification and validation (IV and V) implementation methods, specific approaches and accomplishments in the application of IV and V to NASA programs are discussed. Because software is mission critical, software assurance is a critical aspect of NASA's safety and mission assurance program. An overview of NASA's software IV and V facility is given.

Gregory, Frederick D.↗
NASA NTRS2000

The Density-Potential (N(sub e)-V(sub s/c)) Relation in the High-Latitude Prenoon Ionosphere

Sounding of the Cleft Ion Fountain Energization Region (SCIFER) Thermal Electron Capped Hemisphere Spectrometer (TECHS) data are used to study the plasma density, spacecraft potential relation (N(sub e)-V(sub s/c)) in the prenoon topside auroral and cleft ionosphere during a period of low solar activity. The SCIFER TECHS data show a power-law electron temperature dependence on ambient density across the transition from positive to negative spacecraft potential values in the high-latitude ionosphere. The illuminated ionospheric N(sub e)-V(sub s/c) relation is numerically modeled by imposing equilibrium of current flowing to/from the conductive surfaces of the payload. This modeling demonstrates a strong dependence of spacecraft potential on electron temperature across a wide range of densities. This electron temperature dependence is especially significant in the negative spacecraft potential regime. SCIFER TECHS observations of the N(sub e)-V(sub s/c) relation are used to extend the previous magnetospheric observation-model results to the higher density ionospheric regime.

Adrian, M. L.↗
NASA NTRS2001

Rotor Design Options for Improving V-22 Whirl-Mode Stability

With current tilt-rotor technology, very stiff, thick wings of limited aspect ratio are essential to meet aeroelastic stability requirements, which severely limits cruise efficiency and maximum speed. Larger and more efficient tiltrotors; will need longer and lighter wings, for which whirl-mode flutter is a serious design issue. Numerous approaches to improving the whirl-mode airspeed boundary have been investigated, typically focusing on wing design, active stability augmentation, and variable geometry rotors. The research to be reported applies the much simpler approaches of sweeping the outboard blade sections and extending balance weights at the tip. Improving proprotor whirl-mode stability margins is an ongoing research activity at NASA Ames Research Center. Previous efforts focussed on the XV-15 rotor. This is the first application of these design principles to a full V-22 rotor model in CAMRAD II (a previous publication presented results for a preliminary analytical model). The analysis to be discussed in the proposed paper includes a dual load-path blade model, a compressible-flow aerodynamic model, a representation of swashplate/rotor modal coupling, and other new features. The paper will include discussions of the mechanisms by which blade sweep and tip-mass offsets improve whirl-flutter margins. The V-22 was modeled with CAMRAD II; the rotor model is shown. It is also shows an example swept blade derived from the V-22 rotor system. For this rotor, the primary significance of sweep is the improved whirl-flutter boundary, not the reduced Mach-number effects. An offset tip mass is also shown.

Acree, C. W., Jr.↗
NASA NTRS2003

Asymmetric Stokes-V Profiles at the Penumbral Boundary of a Sunspot

We present the spectropolarimetric measurements of a sunspot in the active region NOAA 6958 (15S03W), situated near the central meridian disk passage. The follower polarity sunspot was somewhat symmetrically round shaped with an elongated penumbra. There were several opposite polarity magnetic elements at, and beyond the penumbral boundary. The H-alpha images of the sunspot show the bright emission regions near the penumbral boundary towards the sun-center, which was of opposite polarity with respect to the main spot. The net-circular polarization (NCP) map shows that NCP is negative in the inner part of the spot and positive at the penumbral boundary and near the H-alpha plage. The Doppler velocities were determined by measuring the center-of-gravity (COG) of the Stokes-I profile and zero-crossing (ZC) wavelength of the Stokes-V profiles. The COG velocity map in general agrees with the Evershed flow. In addition, it shows the up flow in the penumbral region. The ZC velocities show the strong down flow at the penumbral boundary. Double-lobed Stokes-V profiles are observed at the locations, where the penumbral fibrils terminate coinciding the H-alpha plage. The Double lobed profiles had an unshifted component similar to the Stokes-V profiles of the sunspot penumbra and a shifted component with a velocity of about 5 km/s. The amplitude of the second component increases along the penumbral fibril as a function of the distance from the center of the sunspot. In this paper we discuss the role of emerging flux in generating the observed double lobed profiles. Based on our present observations, we propose to observe with the Solar-B Spectropolarimeter for understanding the nature of emerging flux near the sunspots.

Choudhary, Debi Prasad↗
NASA NTRS2002

FY 2002 Report on Software Visualization Techniques for IV and V

One of the major challenges software engineers often face in performing IV&V is developing an understanding of a system created by a development team they have not been part of. As budgets shrink and software increases in complexity, this challenge will become even greater as these software engineers face increased time and resource constraints. This research will determine which current aspects of providing this understanding (e.g., code inspections, use of control graphs, use of adjacency matrices, requirements traceability) are critical to the performing IV&V and amenable to visualization techniques. We will then develop state-of-the-art software visualization techniques to facilitate the use of these aspects to understand software and perform IV&V.

Fotta, Michael E.↗
NASA NTRS2004

Comparative Planetary Mineralogy: V/(Cr+Al) Systematics in Chromites as an Indicator of Relative Oxygen Fugacity

As our contribution to the new "Oxygen in the Solar System" initiative of the Lunar and Planetary Institute and the NASA Cosmochemistry Program, we have been developing oxygen barometers based largely on behavior of V which can occur in four valence states V2+, V3+, V4+, and V5+, and record at least 8 orders of magnitude of fO2. Our first efforts in measuring these valence proportions were by XANES techniques in basaltic glasses from Earth, Moon, and Mars. We now address the behavior of V valence states in chromite in basalts from Earth, Moon, and Mars. We have been looking for a "V in chromite oxybarometer" that works with data collected by the electron microprobe and thus is readily accessible to a large segment of the planetary materials community. This paper describes very early results that will be refined over the next two years.

Papike, J. J.↗
NASA NTRS2005

Advances in Single and Multijunction III-V Photovoltaics on Silicon for Space Power

A collaborative research effort at MIT, Ohio State University and NASA has resulted in the demonstration of record quality gallium arsenide (GaAs) based single junction photovoltaic devices on silicon (Si) substrates. The ability to integrate highly efficient, radiation hard III-V based devices on silicon offers the potential for dramatic reductions in cell mass (approx.2x) and increases in cell area. Both of these improvements offer the potential for dramatic reductions in the cost of on-orbit electrical power. Recently, lattice matched InGaP/GaAs and metamorphic InGaP/InGaAs dual junction solar cells were demonstrated by MBE and OMVPE, respectively. Single junction GaAs on Si devices have been integrated into a space flight experiment (MISSES), scheduled to be launched to the International Space Station in March of 2005. I-V performance data from the GaAs/Si will be collected on-orbit and telemetered to ground stations daily. Microcracks in the GaAs epitaxial material, generated because of differences in the thermal expansion coefficient between GaAs and Si, are of concern in the widely varying thermal environment encountered in low Earth orbit. Ground based thermal life cycling (-80 C to + 80 C) equivalent to 1 year in LEO has been conducted on GaAs/Si devices with no discernable degradation in device performance, suggesting that microcracks may not limit the ability to field GaAs/Si in harsh thermal environments. Recent advances in the development and testing of III-V photovoltaic devices on Si will be presented.

Wilt, David M.↗